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查看斯高帕斯 (Scopus) 概要
曾 院介
教授
新世代功能性物質研究中心
材料科學與工程學系
智慧半導體奈米系統技術研究中心
https://orcid.org/0000-0001-5258-6152
h-index
h10-index
h5-index
1270
引文
18
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
401
引文
12
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
191
引文
8
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2004
2024
每年研究成果
概覽
指紋
網路
計畫
(20)
研究成果
(94)
獎項
(2)
類似的個人檔案
(6)
指紋
查看啟用 Yuan-Chieh Tseng 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
Spin-orbit Torque
64%
Magnetic Properties
49%
Magnetic Tunnel Junction
45%
Nanoarrays
44%
Magnetization
43%
Heterostructure
43%
Molybdenite
42%
Antiferromagnetic Order
41%
Magnetic Circular Dichroism
41%
Magnetic Transition
37%
Atomic Layer Deposited
37%
Ultrathin
36%
FeCo
33%
Perpendicular Magnetic Anisotropy
32%
Electroless
31%
Pressure-induced
29%
Thin-film Transistors
29%
Ferromagnet
29%
X-ray Magnetic Circular Dichroism
28%
Electrical Characteristics
28%
Diamond Anvil Cell
28%
X-ray Absorption Spectroscopy
27%
Magnetocaloric Materials
27%
Antiferromagnetic
27%
Magnetism
26%
Si Doping
26%
Magnetic Spectroscopy
25%
Charge Transfer Effect
25%
Core-shell
24%
Electronic Structure
24%
CoFeB-MgO
24%
High Pressure
23%
Phase Transition
22%
Orthorhombic
22%
Coercivity
22%
Spintronics
22%
SixGe1-x
22%
Nanorods
22%
Spin Polarization
22%
CexZr1-xO2
22%
Magnetic Ordering
21%
Annealing
21%
Spintronic Devices
21%
Superparamagnetic
21%
Ferrimagnetic
21%
Memristor
21%
Applied Pressure
20%
Circular Dichroism Spectroscopy
20%
Oxygen Vacancy
19%
Magnetic States
18%
Material Science
Anisotropy
100%
Film
75%
Surface (Surface Science)
67%
Density
67%
Heterojunction
55%
Magnesium Oxide
55%
Ferroelectric Material
53%
Magnetic Property
52%
Magnetism
45%
Diamond
42%
Nanoparticle
37%
Thin Films
36%
Annealing
36%
Phase Composition
35%
Ferromagnetism
33%
Energy Levels
31%
Nanorod
29%
Spin Polarization
26%
Thermal Stability
26%
Electroless Deposition
26%
ZnO
26%
Two-Dimensional Material
25%
Field Effect Transistor
22%
Curie Temperature
22%
Thin-Film Transistor
22%
Nanostructure
22%
Neuromorphic Computing
22%
Oxygen Vacancy
22%
Absorption Spectroscopy
21%
Oxidation Reaction
20%
Oxide Compound
19%
Aluminum Oxide
18%
Electrical Property
17%
Structural Property
17%
Electronic Circuit
15%
X-Ray Photoelectron Spectroscopy
15%
Transistor
14%
Magnetic Structure
14%
High-Resolution Transmission Electron Microscopy
14%
Electrodeposition
14%
Indium
14%
Zinc Oxide
14%
Surface Modification
14%
Tunneling Magnetoresistance
14%
Magnetocaloric Properties
13%
X-Ray Absorption Spectroscopy
12%
Transmission Electron Microscopy
12%
Nanotube
12%
Capacitor
12%
Transition Metal
11%
Engineering
Magnetic Tunnel Junction
37%
Monoclinic
33%
Atomic Layer
29%
Thin-Film Transistor
29%
Spin Transfer
29%
Magnetoelectronics
28%
Heterojunctions
28%
Molybdenum Disulfide
22%
Phase Composition
22%
Ray Absorption
21%
Thin Films
17%
Coercivity
17%
Magnetoresistive Random-Access Memory
16%
Resistive
15%
Annealing Process
14%
Atomic Layer Deposition
14%
Polysilicon
14%
Ferromagnet
14%
Free Layer
12%
Random Access Memory Device
12%
Low-Temperature
11%
Oxygen Vacancy
11%
External Magnetic Field
11%
Photocurrent
9%
Spin Configuration
9%
Applied Field
9%
Heterostructures
9%
Annealing Temperature
9%
Rapid Thermal Annealing
9%
Si Substrate
9%
Random Access Memory
9%
Indium Gallium Arsenide
9%
Polycrystalline
8%
Tunnel Construction
8%
Ray Photoelectron Spectroscopy
8%
High Resolution
8%
Ground State
8%
Channel Length
7%
Oxide Semiconductor
7%
Effective Charge
7%
Output Pulse
7%
Engineering
7%
Nanotube
7%
Magnetic Sensor
7%
Core-Shell
7%
CMOS Integrated Circuits
7%
Arrhenius
7%
Complementary Metal-Oxide-Semiconductor
7%
Photoemission
7%
Crystal Orientation
7%
