Yi-Ming Li

2007

Electrical characteristic fluctuations in 16 nm bulk-FinFET devices

Li, Y.-M. & Hwang, C. H., 9月 2007, 於: Microelectronic Engineering. 84, 9-10, p. 2093-2096 4 p.

研究成果: Article › 同行評審

17 引文斯高帕斯（Scopus）

Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale CMOS and SOI devices

Li, Y.-M., Yu, S. M. & Chen, H. M., 9月 2007, 於: Microelectronic Engineering. 84, 9-10, p. 2117-2120 4 p.

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

2006

A drain-current model for DG PMOSFETs with fabricated 35 nm device comparison

Mckenzie, T. G. & Li, Y.-M., 2006, 於: International Journal of Computational Science and Engineering. 2, 3-4, p. 144-147 4 p.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

A simulation-based evolutionary technique for inverse doping profile problem of sub-65 nm CMOS devices

Li, Y. & Chen, C. K., 12月 2006, 於: Journal of Computational Electronics. 5, 4, p. 365-370 6 p.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

A study of threshold voltage fluctuations of nanoscale double gate metal-oxide-semiconductor field effect transistors using quantum correction simulation

Li, Y.-M. & Shao-Ming, Y. U., 7月 2006, 於: Journal of Computational Electronics. 5, p. 125–129 5 p.

研究成果: Article › 同行評審

開啟存取

Comparison of random-dopant-induced threshold voltage fluctuation in nanoscale single-, double-, and surrounding-gate field-effect transistors

Li, Y.-M. & Yu, S. M., 7 9月 2006, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 9 A, p. 6860-6865 6 p.

研究成果: Article › 同行評審

51 引文斯高帕斯（Scopus）

Effective electrostatic discharge protection circuit design using novel fully suicided N-MOSFETs in sub-100-nm device era

Lee, J. W. & Li, Y.-M., 5月 2006, 於: IEEE Transactions on Nanotechnology. 5, 3, p. 211-215 5 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Numerical simulation and comparison of electrical characteristics between uniaxial strained bulk and SOI FinFETs

Li, Y.-M., 12月 2006, 於: Journal of Computational Electronics. 5, 4, p. 371-376 6 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Numerical simulation of random dopant fluctuation in sub-65 nm metal-oxide-semiconductor field effect transistors

Lo, S. C. & Li, Y.-M., 1月 2006, 於: WSEAS Transactions on Mathematics. 5, 1, p. 129-138 10 p.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Numerical solutions of a master equation for protein folding kinetics

Li, Y.-M., 2006, 於: International Journal of Bioinformatics Research and Applications. 2, 4, p. 420-429 10 p.

研究成果: Article › 同行評審

2005

A compact model for electrostatic discharge protection nanoelectronics simulation

Chou, H. M., Yu, S. M., Lee, J. W. & Li, Y.-M., 11 11月 2005, 於: International Journal of Nanotechnology. 2, 3, p. 226-238 13 p.

研究成果: Article › 同行評審

A comparative study of electrical characteristic on sub-10-nm double-gate MOSFETs

Li, Y.-M. & Chou, H. M., 9月 2005, 於: IEEE Transactions on Nanotechnology. 4, 5, p. 645-647 3 p.

研究成果: Article › 同行評審

56 引文斯高帕斯（Scopus）

An iterative method for single and vertically stacked semiconductor quantum dots simulation

Li, Y.-M., 10月 2005, 於: Mathematical and Computer Modelling. 42, 7-8, p. 711-718 8 p.

研究成果: Article › 同行評審

開啟存取

9 引文斯高帕斯（Scopus）

A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation

Li, Y.-M. & Yu, S. M., 1 3月 2005, 於: Journal of Computational and Applied Mathematics. 175, 1 SPEC. ISS., p. 87-99 13 p.

研究成果: Article › 同行評審

開啟存取

42 引文斯高帕斯（Scopus）

Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs

Li, Y., Chou, H. M. & Lee, J. W., 9月 2005, 於: IEEE Transactions on Nanotechnology. 4, 5, p. 510-516 7 p.

研究成果: Article › 同行評審

104 引文斯高帕斯（Scopus）

Magnetization and magnetic susceptibility in nanoscale vertically coupled semiconductor quantum rings

Li, Y.-M., 4月 2005, 於: Journal of Computational Electronics. 4, 1-2, p. 135-138 4 p.

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

Quantum mechanical corrected simulation program with integrated circuit emphasis model for simulation of ultrathin oxide metal-oxide-semiconductor field effect transistor gate tunneling current

Li, Y.-M., Shao-Ming, Y. U. & Lee, J. W., 4月 2005, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 4 B, p. 2132-2136 5 p.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

Transition energies of vertically coupled multilayer nanoscale InAs/GaAs semiconductor quantum dots of different shapes

Li, Y.-M., 4月 2005, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 4 B, p. 2642-2646 5 p.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

2004

A novel approach to compact model parameter extraction for excimer laser annealed complementary thin film transistors

Li, Y.-M. & Yu, S. M., 10月 2004, 於: Journal of Computational Electronics. 3, 3-4, p. 257-261 5 p.

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

A quantum correction poisson equation for metal-oxide-semiconductor structure simulation

Li, Y.-M., 7月 2004, 於: Semiconductor Science and Technology. 19, 7, p. 917-922 6 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

A two-dimensional quantum transport simulation of nanoscale double-gate MOSFETs using parallel adaptive technique

Li, Y.-M. & Yu, S. M., 7月 2004, 於: IEICE Transactions on Information and Systems. E87-D, 7, p. 1751-1758 8 p.

研究成果: Article › 同行評審

24 引文斯高帕斯（Scopus）

A unified quantum correction model for nanoscale single- And double-gate MOSFETs under inversion conditions

Li, Y.-M. & Yu, S. M., 8月 2004, 於: Nanotechnology. 15, 8, p. 1009-1016 8 p.

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

Computer simulation of multifinger heterojunction bipolar transistor with self-heating and thermal coupling models

Huang, K. Y., Li, Y.-M. & Lee, C. P., 8月 2004, 於: Microelectronic Engineering. 75, 2, p. 137-144 8 p.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

Electron transition energy for vertically coupled InAs/GaAs semiconductor quantum dots and rings

Li, Y.-M. & Lu, H. M., 4月 2004, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 B, p. 2104-2109 6 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Electrostatic discharge protection under pad design for copper-low-K VLSI circuits

Lee, J. W., Li, Y.-M., Chao, A. & Tang, H., 4月 2004, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 B, p. 2302-2305 4 p.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Hot carrier degradations of dynamic threshold silicon on insulator p-type metal-oxide-semiconductor field effect transistors

Chao, T. S., Lee, Y. J., Huang, C. Y., Lin, H. C., Li, Y.-M. & Huang, T. Y., 4月 2004, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 A, p. 1300-1304 5 p.

研究成果: Article › 同行評審

Intelligent BSIM4 model parameter extraction for sub-100 nm MOSFET era

Li, Y.-M. & Cho, Y. Y., 4月 2004, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 B, p. 1717-1722 6 p.

研究成果: Article › 同行評審

50 引文斯高帕斯（Scopus）

Silicon-germanium structure in surrounding-gate strained silicon nanowire field effect transistors

Li, Y.-M., Lee, J. W. & Chou, H. M., 10月 2004, 於: Journal of Computational Electronics. 3, 3-4, p. 251-255 5 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

2003

A genetic algorithm approach to InGaP/GaAs HBT parameter extraction and RF characterization

Li, Y.-M., Cho, Y. Y., Wang, C. S. & Huang, K. Y., 4月 2003, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 4 B, p. 2371-2374 4 p.

研究成果: Article › 同行評審

33 引文斯高帕斯（Scopus）

A novel numerical approach to heterojunction bipolar transistors circuit simulation

Li, Y.-M. & Huang, K. Y., 15 5月 2003, 於: Computer Physics Communications. 152, 3, p. 307-316 10 p.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

A novel parallel approach for quantum effect simulation in semiconductor devices

Li, Y.-M., Chao, T. S. & Sze, S. M., 2003, 於: International Journal of Modelling and Simulation. 23, 2, p. 94-102 9 p.

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation

Li, Y.-M., 1 7月 2003, 於: Computer Physics Communications. 153, 3, p. 359-372 14 p.

研究成果: Article › 同行評審

39 引文斯高帕斯（Scopus）

A Quantum Correction Model for Nanoscale Double-Gate MOS Devices Under Inversion Conditions

Li, Y.-M., Tang, T. W. & Yu, S. M., 1 12月 2003, 於: Journal of Computational Electronics. 2, 2-4, p. 491-495 5 p.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

A time-domain approach to simulation and characterization of RF HBT two-tone intermodulation distortion

Huang, K. Y., Li, Y.-M. & Lee, C. P., 10月 2003, 於: IEEE Transactions on Microwave Theory and Techniques. 51, 10, p. 2055-2062 8 p.

研究成果: Article › 同行評審

17 引文斯高帕斯（Scopus）

Computer simulation of magnetization for 3D ellipsoidal torus-shaped InAs/GaAs quantum rings

Li, Y.-M., 5月 2003, 於: International Journal of Modern Physics C. 14, 4, p. 501-507 7 p.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Effect of Shape and Size on Electron Transition Energies for Nanoscale InAs/GaAs Quantum Rings

Li, Y.-M. & Lu, H. M., 1 12月 2003, 於: Journal of Computational Electronics. 2, 2-4, p. 487-490 4 p.

研究成果: Article › 同行評審

Geometric variations and magnetic field effects on electron energy states of InAs/GaAs quantum rings

Li, Y.-M. & Lu, H. M., 4月 2003, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 4 B, p. 2404-2407 4 p.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Numerical calculation of electron energy states for nanoscopic InAs/GaAs quantum rings

Li, Y.-M., 10月 2003, 於: International Journal of Modern Physics C. 14, 8, p. 995-1005 11 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Numerical Calculation of Electronic Structure for Three-Dimensional Nanoscale Semiconductor Quantum Dots and Rings

Li, Y.-M., 1 7月 2003, 於: Journal of Computational Electronics. 2, 1, p. 49-57 9 p.

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

Optimization of the anti-punch-through implant for electrostatic discharge protection circuit design

Li, Y.-M., Lee, J. W. & Sze, S. M., 4月 2003, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 4 B, p. 2152-2155 4 p.

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

2002

A computational method for energy level spin splitting simulation in InAs/GaAs semiconductor quantum dots

Li, Y.-M., Voskoboynikov, O., Lee, C. P., Sze, S. M. & Tretyak, O., 2002, 於: International Journal of Modern Physics C. 13, 4, p. 453-463 11 p.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

A Computational Technique for Electron Energy States Calculation in Nano-Scopic Three-Dimensional InAs/GaAs Semiconductor Quantum Rings Simulation

Li, Y.-M., Voskoboynikov, O., Lee, C. P. & Sze, S. M., 1 7月 2002, 於: Journal of Computational Electronics. 1, 1-2, p. 227-230 4 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET

Li, Y.-M., Chao, T. S. & Sze, S. M., 1 8月 2002, 於: Computer Physics Communications. 147, 1-2, p. 697-701 5 p.

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation

Li, Y.-M., Sze, S. M. & Chao, T.-S., 8月 2002, 於: Engineering with Computers. 18, 2, p. 124-137 14 p.

研究成果: Article › 同行評審

99 引文斯高帕斯（Scopus）

A SPICE-compatible model for nanoscale MOSFET capacitor simulation under the inversion condition

Tang, T. W. & Li, Y.-M., 12月 2002, 於: IEEE Transactions on Nanotechnology. 1, 4, p. 243-246 4 p.

研究成果: Article › 同行評審

21 引文斯高帕斯（Scopus）

Calculation of induced electron states in three-dimensional semiconductor artificial molecules

Li, Y.-M., Voskoboynikov, O., Lee, C. P. & Sze, S. M., 8月 2002, 於: Computer Physics Communications. 147, 1-2, p. 209-213 5 p., 44.

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

Discretization Scheme for the Density-Gradient Equation and Effect of Boundary Conditions

Tang, T. W., Wang, X. & Li, Y.-M., 1 10月 2002, 於: Journal of Computational Electronics. 1, 3, p. 389-393 5 p.

研究成果: Article › 同行評審

53 引文斯高帕斯（Scopus）

Effect of shape and size on electron transition energies of inas semiconductor quantum dots

Li, Y.-M., Voskoboynikov, O., Lee, C. P., Sze, S. M. & Tretyak, O., 4月 2002, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41, 4 B, p. 2698-2700 3 p.

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

Electron energy state spin-splitting in 3D cylindrical semiconductor quantum dots

Li, Y.-M., Voskoboynikov, Lee, C. P., Sze, S. M. & Tretyak, O., 2 8月 2002, 於: European Physical Journal B. 28, 4, p. 475-481 7 p.

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

Energy states and magnetization in nanoscale quantum rings

Voskoboynikov, O., Li, Y.-M., Lu, H. M., Shih, C. F. & Lee, C. P., 15 10月 2002, 於: Physical Review B - Condensed Matter and Materials Physics. 66, 15, p. 1-6 6 p., 155306.

研究成果: Article › 同行評審

72 引文斯高帕斯（Scopus）

李 義明

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李義明