李 義明

研究成果

每年研究成果 1999 2003 2004 2005 2006 2007 2008 2009 2010 2011 2016 2020 2022 2023

• 241 Article
• 231 Conference contribution
• 15 Conference article
• 13 Editorial
• 15 更多
  • 7 Paper
  • 6 Chapter
  • 1 Book
  • 1 Review article

每年研究成果

每年研究成果

搜尋結果

• 2005

  Quantum mechanical corrected simulation program with integrated circuit emphasis model for simulation of ultrathin oxide metal-oxide-semiconductor field effect transistor gate tunneling current

  Li, Y-M., Shao-Ming, Y. U. & Lee, J. W., 4月 2005, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 4 B, p. 2132-2136 5 p.

  研究成果: Article › 同行評審

  • Gates (transistor) 100%
  • MOSFET devices 82%
  • metal oxide semiconductors 72%
  • integrated circuits 66%
  • Integrated circuits 64%
  4 引文 斯高帕斯（Scopus）

• Transition energies of vertically coupled multilayer nanoscale InAs/GaAs semiconductor quantum dots of different shapes

  Li, Y-M., 4月 2005, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 4 B, p. 2642-2646 5 p.

  研究成果: Article › 同行評審

  • Semiconductor quantum dots 100%
  • Electron transitions 61%
  • Multilayers 46%
  • Band structure 45%
  • Hamiltonians 38%
  3 引文 斯高帕斯（Scopus）
• 2004

  A novel approach to compact model parameter extraction for excimer laser annealed complementary thin film transistors

  Li, Y-M. & Yu, S. M., 10月 2004, 於: Journal of Computational Electronics. 3, 3-4, p. 257-261 5 p.

  研究成果: Article › 同行評審

  • Thin-film Transistor 100%
  • Excimer Laser 95%
  • Excimer lasers 74%
  • Silicon 67%
  • Thin film transistors 61%
  7 引文 斯高帕斯（Scopus）

• A quantum correction poisson equation for metal-oxide-semiconductor structure simulation

  Li, Y-M., 7月 2004, 於: Semiconductor Science and Technology. 19, 7, p. 917-922 6 p.

  研究成果: Article › 同行評審

  • Poisson equation 100%
  • Oxide semiconductors 92%
  • metal oxide semiconductors 79%
  • Field Effect 77%
  • Metals 49%
  8 引文 斯高帕斯（Scopus）

• A two-dimensional quantum transport simulation of nanoscale double-gate MOSFETs using parallel adaptive technique

  Li, Y-M. & Yu, S. M., 7月 2004, 於: IEICE Transactions on Information and Systems. E87-D, 7, p. 1751-1758 8 p.

  研究成果: Article › 同行評審

  • Linux 100%
  • Personal computers 94%
  • Mesh generation 59%
  • Semiconductor devices 56%
  • MOSFET devices 56%
  23 引文 斯高帕斯（Scopus）

• A unified quantum correction model for nanoscale single- And double-gate MOSFETs under inversion conditions

  Li, Y-M. & Yu, S. M., 8月 2004, 於: Nanotechnology. 15, 8, p. 1009-1016 8 p.

  研究成果: Article › 同行評審

  • Electron Density 100%
  • Voltage 79%
  • Oxide 59%
  • Liquid Film 52%
  • Inversion layers 47%
  17 引文 斯高帕斯（Scopus）

• Computer simulation of multifinger heterojunction bipolar transistor with self-heating and thermal coupling models

  Huang, K. Y., Li, Y-M. & Lee, C. P., 8月 2004, 於: Microelectronic Engineering. 75, 2, p. 137-144 8 p.

  研究成果: Article › 同行評審

  • Current Gain 100%
  • Heterojunction bipolar transistors 66%
  • bipolar transistors 60%
  • Electronic Band Structure 56%
  • Thermal Conductivity 53%
  4 引文 斯高帕斯（Scopus）

• Electron transition energy for vertically coupled InAs/GaAs semiconductor quantum dots and rings

  Li, Y-M. & Lu, H. M., 4月 2004, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 B, p. 2104-2109 6 p.

  研究成果: Article › 同行評審

  • Semiconductor quantum dots 100%
  • Electron transitions 92%
  • electron transitions 59%
  • Electrons 48%
  • Magnetic fields 42%
  8 引文 斯高帕斯（Scopus）

• Electrostatic discharge protection under pad design for copper-low-K VLSI circuits

  Lee, J. W., Li, Y-M., Chao, A. & Tang, H., 4月 2004, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 B, p. 2302-2305 4 p.

  研究成果: Article › 同行評審

  • Electrostatic discharge 100%
  • very large scale integration 91%
  • VLSI circuits 90%
  • Copper 62%
  • latch-up 59%
  6 引文 斯高帕斯（Scopus）

• Hot carrier degradations of dynamic threshold silicon on insulator p-type metal-oxide-semiconductor field effect transistors

  Chao, T. S., Lee, Y. J., Huang, C. Y., Lin, H. C., Li, Y-M. & Huang, T. Y., 4月 2004, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 A, p. 1300-1304 5 p.

  研究成果: Article › 同行評審

  • Hot carriers 100%
  • p-type semiconductors 95%
  • MOSFET devices 87%
  • metal oxide semiconductors 76%
  • Silicon 58%

• Intelligent BSIM4 model parameter extraction for sub-100 nm MOSFET era

  Li, Y-M. & Cho, Y. Y., 4月 2004, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 B, p. 1717-1722 6 p.

  研究成果: Article › 同行評審

  • Parameter extraction 100%
  • MOSFET devices 92%
  • metal oxide semiconductors 80%
  • field effect transistors 61%
  • Genetic algorithms 37%
  43 引文 斯高帕斯（Scopus）

• Silicon-germanium structure in surrounding-gate strained silicon nanowire field effect transistors

  Li, Y-M., Lee, J. W. & Chou, H. M., 10月 2004, 於: Journal of Computational Electronics. 3, 3-4, p. 251-255 5 p.

  研究成果: Article › 同行評審

  • Silicon Nanowires 100%
  • Germanium 83%
  • Field-effect Transistor 82%
  • Strained silicon 78%
  • Silicon 66%
  8 引文 斯高帕斯（Scopus）
• 2003

  A genetic algorithm approach to InGaP/GaAs HBT parameter extraction and RF characterization

  Li, Y-M., Cho, Y. Y., Wang, C. S. & Huang, K. Y., 4月 2003, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 4 B, p. 2371-2374 4 p.

  研究成果: Article › 同行評審

  • Parameter extraction 100%
  • Heterojunction bipolar transistors 93%
  • genetic algorithms 89%
  • bipolar transistors 85%
  • heterojunctions 69%
  33 引文 斯高帕斯（Scopus）

• A novel numerical approach to heterojunction bipolar transistors circuit simulation

  Li, Y-M. & Huang, K. Y., 15 5月 2003, 於: Computer Physics Communications. 152, 3, p. 307-316 10 p.

  研究成果: Article › 同行評審

  • transistor circuits 100%
  • Heterojunction bipolar transistors 78%
  • Circuit simulation 75%
  • bipolar transistors 71%
  • heterojunctions 58%
  6 引文 斯高帕斯（Scopus）

• A novel parallel approach for quantum effect simulation in semiconductor devices

  Li, Y-M., Chao, T. S. & Sze, S. M., 1 1月 2003, 於: International Journal of Modelling and Simulation. 23, 2, p. 94-102 9 p.

  研究成果: Article › 同行評審

  • Quantum Effects 100%
  • Semiconductor Devices 87%
  • Poisson equation 82%
  • Semiconductor devices 75%
  • Iterative methods 69%
  12 引文 斯高帕斯（Scopus）

• A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation

  Li, Y-M., 1 7月 2003, 於: Computer Physics Communications. 153, 3, p. 359-372 14 p.

  研究成果: Article › 同行評審

  • Poisson equation 100%
  • Iterative methods 84%
  • Semiconductor materials 68%
  • Semiconductor doping 39%
  • Charge density 36%
  38 引文 斯高帕斯（Scopus）

• A Quantum Correction Model for Nanoscale Double-Gate MOS Devices Under Inversion Conditions

  Li, Y-M., Tang, T. W. & Yu, S. M., 1 12月 2003, 於: Journal of Computational Electronics. 2, 2-4, p. 491-495 5 p.

  研究成果: Article › 同行評審

  • MOS devices 100%
  • Charge 72%
  • Electron Density 65%
  • Inversion 64%
  • inversions 58%
  6 引文 斯高帕斯（Scopus）

• A time-domain approach to simulation and characterization of RF HBT two-tone intermodulation distortion

  Huang, K. Y., Li, Y-M. & Lee, C. P., 10月 2003, 於: IEEE Transactions on Microwave Theory and Techniques. 51, 10, p. 2055-2062 8 p.

  研究成果: Article › 同行評審

  • Intermodulation distortion 100%
  • intermodulation 92%
  • Heterojunction bipolar transistors 85%
  • bipolar transistors 77%
  • heterojunctions 63%
  17 引文 斯高帕斯（Scopus）

• Computer simulation of magnetization for 3D ellipsoidal torus-shaped InAs/GaAs quantum rings

  Li, Y-M., 5月 2003, 於: International Journal of Modern Physics C. 14, 4, p. 501-507 7 p.

  研究成果: Article › 同行評審

  • Nanorings 100%
  • Gallium Arsenide 82%
  • Effective Mass 81%
  • Magnetization 63%
  • Computer Simulation 48%
  3 引文 斯高帕斯（Scopus）

• Effect of Shape and Size on Electron Transition Energies for Nanoscale InAs/GaAs Quantum Rings

  Li, Y-M. & Lu, H. M., 1 12月 2003, 於: Journal of Computational Electronics. 2, 2-4, p. 487-490 4 p.

  研究成果: Article › 同行評審

  • Electron transitions 100%
  • Gallium Arsenide 87%
  • electron transitions 64%
  • Electron 53%
  • Electrons 52%

• Geometric variations and magnetic field effects on electron energy states of InAs/GaAs quantum rings

  Li, Y-M. & Lu, H. M., 4月 2003, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 4 B, p. 2404-2407 4 p.

  研究成果: Article › 同行評審

  • Magnetic field effects 100%
  • Electron energy levels 72%
  • Magnetic fields 54%
  • Electrons 46%
  • electron energy 46%
  6 引文 斯高帕斯（Scopus）

• Numerical calculation of electron energy states for nanoscopic InAs/GaAs quantum rings

  Li, Y-M., 10月 2003, 於: International Journal of Modern Physics C. 14, 8, p. 995-1005 11 p.

  研究成果: Article › 同行評審

  • Gallium Arsenide 100%
  • Electron energy levels 69%
  • Numerical Calculation 64%
  • Electron 61%
  • 3D Model 50%
  2 引文 斯高帕斯（Scopus）

• Numerical Calculation of Electronic Structure for Three-Dimensional Nanoscale Semiconductor Quantum Dots and Rings

  Li, Y-M., 1 7月 2003, 於: Journal of Computational Electronics. 2, 1, p. 49-57 9 p.

  研究成果: Article › 同行評審

  • Semiconductor quantum dots 100%
  • Quantum Dots 79%
  • Electronic structure 71%
  • Electronic Structure 69%
  • Semiconductors 57%
  10 引文 斯高帕斯（Scopus）

• Optimization of the anti-punch-through implant for electrostatic discharge protection circuit design

  Li, Y-M., Lee, J. W. & Sze, S. M., 4月 2003, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 4 B, p. 2152-2155 4 p.

  研究成果: Article › 同行評審

  • circuit protection 100%
  • Electrostatic discharge 78%
  • punches 73%
  • electrostatics 45%
  • optimization 39%
  15 引文 斯高帕斯（Scopus）
• 2002

  A computational method for energy level spin splitting simulation in InAs/GaAs semiconductor quantum dots

  Li, Y-M., Voskoboynikov, O., Lee, C. P., Sze, S. M. & Tretyak, O., 2002, 於: International Journal of Modern Physics C. 13, 4, p. 453-463 11 p.

  研究成果: Article › 同行評審

  • Semiconductor quantum dots 100%
  • Gallium Arsenide 80%
  • Quantum Dots 79%
  • Energy Levels 58%
  • Semiconductors 57%
  4 引文 斯高帕斯（Scopus）

• A Computational Technique for Electron Energy States Calculation in Nano-Scopic Three-Dimensional InAs/GaAs Semiconductor Quantum Rings Simulation

  Li, Y-M., Voskoboynikov, O., Lee, C. P. & Sze, S. M., 1 7月 2002, 於: Journal of Computational Electronics. 1, 1-2, p. 227-230 4 p.

  研究成果: Article › 同行評審

  • Gallium Arsenide 100%
  • Energy State 77%
  • Computational Techniques 73%
  • Semiconductors 70%
  • Electron energy levels 69%
  8 引文 斯高帕斯（Scopus）

• A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET

  Li, Y-M., Chao, T. S. & Sze, S. M., 1 8月 2002, 於: Computer Physics Communications. 147, 1-2, p. 697-701 5 p.

  研究成果: Article › 同行評審

  • Threshold voltage 100%
  • threshold voltage 86%
  • partitions 86%
  • field effect transistors 71%
  • dynamic loads 63%
  15 引文 斯高帕斯（Scopus）

• A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation

  Li, Y-M., Sze, S. M. & Chao, T-S., 8月 2002, 於: Engineering with Computers. 18, 2, p. 124-137 14 p.

  研究成果: Article › 同行評審

  • Dynamic Load Balancing 100%
  • Device Simulation 86%
  • Semiconductor devices 60%
  • Dynamic loads 51%
  • Semiconductor Device Simulation 44%
  98 引文 斯高帕斯（Scopus）

• A SPICE-compatible model for nanoscale MOSFET capacitor simulation under the inversion condition

  Tang, T. W. & Li, Y-M., 12月 2002, 於: IEEE Transactions on Nanotechnology. 1, 4, p. 243-246 4 p.

  研究成果: Article › 同行評審

  • SPICE 100%
  • Capacitors 73%
  • Inversion layers 27%
  • Oxides 26%
  • Simulators 22%
  18 引文 斯高帕斯（Scopus）

• Calculation of induced electron states in three-dimensional semiconductor artificial molecules

  Li, Y-M., Voskoboynikov, O., Lee, C. P. & Sze, S. M., 8月 2002, 於: Computer Physics Communications. 147, 1-2, p. 209-213 5 p., 44.

  研究成果: Article › 同行評審

  • Electron energy levels 100%
  • electron states 94%
  • Electrons 86%
  • Molecules 84%
  • Semiconductor materials 76%
  13 引文 斯高帕斯（Scopus）

• Discretization Scheme for the Density-Gradient Equation and Effect of Boundary Conditions

  Tang, T. W., Wang, X. & Li, Y-M., 1 10月 2002, 於: Journal of Computational Electronics. 1, 3, p. 389-393 5 p.

  研究成果: Article › 同行評審

  • Inversion layers 100%
  • Electron devices 88%
  • Charge density 80%
  • Discretization Scheme 66%
  • Tunneling 58%
  53 引文 斯高帕斯（Scopus）

• Effect of shape and size on electron transition energies of inas semiconductor quantum dots

  Li, Y-M., Voskoboynikov, O., Lee, C. P., Sze, S. M. & Tretyak, O., 4月 2002, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41, 4 B, p. 2698-2700 3 p.

  研究成果: Article › 同行評審

  • Semiconductor quantum dots 100%
  • Electron transitions 92%
  • electron transitions 59%
  • Electrons 48%
  • quantum dots 37%
  10 引文 斯高帕斯（Scopus）

• Electron energy state spin-splitting in 3D cylindrical semiconductor quantum dots

  Li, Y-M., Voskoboynikov, Lee, C. P., Sze, S. M. & Tretyak, O., 2 8月 2002, 於: European Physical Journal B. 28, 4, p. 475-481 7 p.

  研究成果: Article › 同行評審

  • Semiconductor quantum dots 100%
  • Spin Splitting 85%
  • Energy State 62%
  • Electron energy levels 56%
  • Electrons 48%
  11 引文 斯高帕斯（Scopus）

• Energy states and magnetization in nanoscale quantum rings

  Voskoboynikov, O., Li, Y-M., Lu, H. M., Shih, C. F. & Lee, C. P., 15 10月 2002, 於: Physical Review B - Condensed Matter and Materials Physics. 66, 15, p. 1-6 6 p., 155306.

  研究成果: Article › 同行評審

  • Energy State 100%
  • Magnetization 91%
  • Electron energy levels 89%
  • Magnetic Field 72%
  • Magnetic fields 67%
  72 引文 斯高帕斯（Scopus）

• Modeling of quantum effects for ultrathin oxide MOS structures with an effective potential

  Li, Y-M., Tang, T. W. & Wang, X., 12月 2002, 於: IEEE Transactions on Nanotechnology. 1, 4, p. 238-242 5 p.

  研究成果: Article › 同行評審

  • Semiconductor doping 100%
  • Inversion layers 57%
  • Oxides 56%
  • Charge density 46%
  • Bias voltage 41%
  36 引文 斯高帕斯（Scopus）

• Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models

  Li, Y-M., Lee, J. W., Tang, T. W., Chao, T. S., Lei, T. F. & Sze, S. M., 1 8月 2002, 於: Computer Physics Communications. 147, 1-2, p. 214-217 4 p.

  研究成果: Article › 同行評審

  • Gate dielectrics 100%
  • Oxide semiconductors 83%
  • metal oxide semiconductors 72%
  • capacitors 45%
  • Metals 45%
  20 引文 斯高帕斯（Scopus）
• 2001

  Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots

  Li, Y-M., Voskoboynikov, O., Lee, C. P. & Sze, S. M., 15 11月 2001, 於: Computer Physics Communications. 141, 1, p. 66-72 7 p.

  研究成果: Article › 同行評審

  • Semiconductor quantum dots 100%
  • Electron energy levels 56%
  • Excited states 40%
  • energy levels 39%
  • computerized simulation 39%
  84 引文 斯高帕斯（Scopus）

• Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot

  Li, Y-M., Liu, J. L., Voskoboynikov, O., Lee, C. P. & Sze, S. M., 1 11月 2001, 於: Computer Physics Communications. 140, 3, p. 399-404 6 p.

  研究成果: Article › 同行評審

  • Semiconductor quantum dots 100%
  • Electron energy levels 56%
  • Electrons 48%
  • energy levels 39%
  • quantum dots 37%
  34 引文 斯高帕斯（Scopus）

• Electron energy state dependence on the shape and size of semiconductor quantum dots

  Li, Y-M., Voskoboynikov, O., Lee, C. P., Sze, S. M. & Tretyak, O., 15 12月 2001, 於: Journal of Applied Physics. 90, 12, p. 6416-6420 5 p.

  研究成果: Article › 同行評審

  • quantum dots 100%
  • electron energy 97%
  • disks (shapes) 48%
  • exponents 24%
  • ground state 21%
  57 引文 斯高帕斯（Scopus）

• Energy and coordinate dependent effective mass and confined electron states in quantum dots

  Li, Y-M., Voskoboynikov, O., Lee, C. P. & Sze, S. M., 26 9月 2001, 於: Solid State Communications. 120, 2-3, p. 79-83 5 p.

  研究成果: Article › 同行評審

  • Effective Mass 100%
  • Electron energy levels 82%
  • electron states 78%
  • Electrons 71%
  • Quantum Dot 63%
  43 引文 斯高帕斯（Scopus）

• Monotone iterative method and adaptive finite volume method for parallel numerical simulation of submicron MOSFET devices

  Li, Y-M., Chen, C. K. & Chen, P., 1月 2001, 於: Unknown Journal. p. 25-30 6 p.

  研究成果: Article › 同行評審

  • Semiconductor devices 100%
  • MOSFET devices 99%
  • Finite volume method 94%
  • Iterative methods 92%
  • Linux 88%
  2 引文 斯高帕斯（Scopus）