李 義明

研究成果

每年研究成果 1999 2003 2004 2005 2006 2007 2008 2009 2010 2011 2016 2020 2022 2023

• 241 Article
• 231 Conference contribution
• 15 Conference article
• 13 Editorial
• 15 更多
  • 7 Paper
  • 6 Chapter
  • 1 Book
  • 1 Review article

每年研究成果

每年研究成果

搜尋結果

• 2009

  Field emission stability of anodic aluminum oxide carbon nanotube field emitter in the triode structure

  Li, Y-M. & Cheng, H. W., 5月 2009, 於: Journal of Nanoscience and Nanotechnology. 9, 5, p. 3301-3307 7 p.

  研究成果: Article › 同行評審

  • Triodes 100%
  • Field emission 87%
  • triodes 86%
  • Carbon nanotubes 72%
  • Field Emission 68%
  4 引文 斯高帕斯（Scopus）

• Hybrid intelligent approach for modeling and optimization of semiconductor devices and nanostructures

  Li, Y., 3月 2009, 於: Computational Materials Science. 45, 1, p. 41-51 11 p.

  研究成果: Article › 同行評審

  • Nanostructures 100%
  • Semiconductor Devices 94%
  • Semiconductor devices 81%
  • semiconductor devices 70%
  • Semiconductors 65%
  12 引文 斯高帕斯（Scopus）

• Impact of channel fin aspect ratio on multi-fin field effect transistors

  Cheng, H. W., Hwang, C. H. & Li, Y., 8月 2009, 於: International Journal of Electrical Engineering. 16, 4, p. 301-312 12 p.

  研究成果: Article › 同行評審

  • Field effect transistors 100%
  • Aspect ratio 86%
  • FinFET 71%
  • Transistors 63%
  • Gates (transistor) 26%
  6 引文 斯高帕斯（Scopus）

• Intelligent optical proximity correction using genetic algorithm with model- and rule-based approaches

  Li, Y-M., Yu, S. M. & Li, Y. L., 1 3月 2009, 於: Computational Materials Science. 45, 1, p. 65-76 12 p.

  研究成果: Article › 同行評審

  • Optical Proximity Correction 100%
  • Mask 57%
  • genetic algorithms 51%
  • Genetic Algorithm 49%
  • proximity 42%
  23 引文 斯高帕斯（Scopus）

• Numerical calculation of the reflectance of sub-wavelength structures on silicon nitride for solar cell application

  Sahoo, K. C., Li, Y. & Chang, E. Y., 1 10月 2009, 於: Computer Physics Communications. 180, 10, p. 1721-1729 9 p.

  研究成果: Article › 同行評審

  • Silicon nitride 100%
  • Solar cells 87%
  • silicon nitrides 80%
  • Wavelength 72%
  • solar cells 61%
  22 引文 斯高帕斯（Scopus）

• Optimal configuration of hydrogen-embrittlement-fabricated nanogaps for surface-conduction electron-emitter display

  Li, Y. & Cheng, H. W., 11月 2009, 於: IEEE Transactions on Nanotechnology. 8, 6, p. 671-677 7 p., 5071204.

  研究成果: Article › 同行評審

  • Hydrogen embrittlement 100%
  • Electrons 78%
  • Display devices 59%
  • Anodes 37%
  • Electron sources 35%
  8 引文 斯高帕斯（Scopus）

• Parallel genetic algorithm for intelligent model parameter extraction of metal-oxide-semiconductor field effect transistors

  Li, Y-M., 3月 2009, 於: Materials and Manufacturing Processes. 24, 3, p. 243-249 7 p.

  研究成果: Article › 同行評審

  • Parameter extraction 100%
  • MOSFET devices 92%
  • Field Effect 78%
  • Parallel algorithms 74%
  • Semiconductor 60%
  9 引文 斯高帕斯（Scopus）

• Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices

  Li, Y-M., Hwang, C. H. & Cheng, H. W., 3月 2009, 於: Microelectronic Engineering. 86, 3, p. 277-282 6 p.

  研究成果: Article › 同行評審

  • fins 100%
  • MOSFET devices 97%
  • Doping (additives) 92%
  • Threshold voltage 91%
  • metal oxide semiconductors 85%
  21 引文 斯高帕斯（Scopus）

• Random-dopant-induced variability in nano-CMOS devices and digital circuits

  Li, Y-M., Hwang, C. H. & Li, T. Y., 2009, 於: IEEE Transactions on Electron Devices. 56, 8, p. 1588-1597 10 p.

  研究成果: Article › 同行評審

  • Doping (additives) 100%
  • Digital circuits 99%
  • Networks (circuits) 49%
  • Doping Material 39%
  • Time 32%
  58 引文 斯高帕斯（Scopus）

• Silicon nitride nanopillars and nanocones formed by nickel nanoclusters and inductively coupled plasma etching for solar cell application

  Sahoo, K. C., Lin, M. K., Chang, E. Y., Tinh, T. B., Li, Y. & Huang, J. H., 1 12月 2009, 於: Japanese journal of applied physics. 48, 12, 126508.

  研究成果: Article › 同行評審

  • Nanoclusters 100%
  • Nanopillars 99%
  • Inductively coupled plasma 86%
  • Plasma etching 86%
  • Silicon nitride 70%
  23 引文 斯高帕斯（Scopus）

• The effect of the geometry aspect ratio on the silicon ellipse-shaped surroundinggate field-effect transistor and circuit

  Li, Y-M. & Hwang, C. H., 9月 2009, 於: Semiconductor Science and Technology. 24, 9, 095018.

  研究成果: Article › 同行評審

  • ellipses 100%
  • Field effect transistors 93%
  • Field Effect 87%
  • Aspect ratio 81%
  • aspect ratio 79%
  33 引文 斯高帕斯（Scopus）

• The geometric effect and programming current reduction in cylindrical-shaped phase change memory

  Li, Y-M., Hwang, C. H., Li, T. Y. & Cheng, H. W., 15 7月 2009, 於: Nanotechnology. 20, 28, 285701.

  研究成果: Article › 同行評審

  • Phase change memory 100%
  • Reduction 32%
  • Electrodes 24%
  • Behavior as Electrode 15%
  • Chalcogenides 12%
  7 引文 斯高帕斯（Scopus）
• 2008

  Design optimization of a current mirror amplifier integrated circuit using a computational statistics technique

  Li, Y., Li, Y. L. & Yu, S. M., 15 12月 2008, 於: Mathematics and Computers in Simulation. 79, 4, p. 1165-1177 13 p.

  研究成果: Article › 同行評審

  • Computational Statistics 100%
  • Integrated Circuits 99%
  • Mirror 75%
  • Mirrors 69%
  • Integrated circuits 62%
  12 引文 斯高帕斯（Scopus）

• Discrete-dopant-fluctuated threshold voltage roll-off in sub-16 nm bulk fin-type field effect transistors

  Li, Y-M. & Hwang, C. H., 25 4月 2008, 於: Japanese journal of applied physics. 47, 4 PART 2, p. 2580-2584 5 p.

  研究成果: Article › 同行評審

  • fins 100%
  • Doping (additives) 92%
  • Threshold voltage 91%
  • Field effect transistors 89%
  • threshold voltage 78%
  17 引文 斯高帕斯（Scopus）

• Discrete dopant fluctuations in 20-nm/15-nm-gate planar CMOS

  Li, Y-M., Yu, S. M., Hwang, J. R. & Yang, F. L., 6月 2008, 於: IEEE Transactions on Electron Devices. 55, 6, p. 1449-1455 7 p.

  研究成果: Article › 同行評審

  • Oxide semiconductors 100%
  • Doping (additives) 94%
  • Doping Material 74%
  • Metals 54%
  • Work Function 19%
  109 引文 斯高帕斯（Scopus）

• Effect of the single grain boundary position on surrounding-gate polysilicon thin film transistors

  Li, Y., Huang, J. Y. & Lee, B. S., 1 1月 2008, 於: Semiconductor Science and Technology. 23, 1, 015019.

  研究成果: Article › 同行評審

  • Thin film transistors 100%
  • Polysilicon 90%
  • Grain Boundary 81%
  • Grain boundaries 79%
  • transistors 62%
  17 引文 斯高帕斯（Scopus）

• Electronic design automation using a unified optimization framework

  Li, Y-M., Yu, S. M. & Li, Y. L., 15 12月 2008, 於: Mathematics and Computers in Simulation. 79, 4, p. 1137-1152 16 p.

  研究成果: Article › 同行評審

  • Design Automation 100%
  • Electronic design automation 81%
  • Electronics 57%
  • Optimization 42%
  • Framework 31%
  26 引文 斯高帕斯（Scopus）

• High field emission efficiency surface conduction electron emitters

  Li, Y., Chao, H. Y. & Lo, H. Y., 2008, 於: Journal of Computational Electronics. 7, 3, p. 440-444 5 p.

  研究成果: Article › 同行評審

  • Field Emission 100%
  • Conduction Electron 74%
  • Field emission 68%
  • Conduction 66%
  • conduction electrons 54%
  8 引文 斯高帕斯（Scopus）

• High-frequency characteristic fluctuations of nano-MOSFET circuit induced by random dopants

  Li, Y-M. & Hwang, C. H., 12月 2008, 於: IEEE Transactions on Microwave Theory and Techniques. 56, 12, p. 2726-2733 8 p., 4682602.

  研究成果: Article › 同行評審

  • transistor circuits 100%
  • Doping (additives) 74%
  • Field effect transistors 71%
  • field effect transistors 52%
  • Networks (circuits) 36%
  49 引文 斯高帕斯（Scopus）

• Large-scale "atomistic" approach to discrete-dopant-induced characteristic fluctuations in silicon nanowire transistors

  Li, Y-M., Hwang, C. H. & Huang, H. M., 6月 2008, 於: Physica Status Solidi (A) Applications and Materials Science. 205, 6, p. 1505-1510 6 p.

  研究成果: Article › 同行評審

  • Nanowires 100%
  • Doping (additives) 89%
  • Nanowire 69%
  • Transistors 68%
  • nanowires 64%
  28 引文 斯高帕斯（Scopus）

• Numerical simulation of field emission efficiency of anodic aluminum oxide carbon nanotube field emitter in the triode structure

  Li, Y-M. & Cheng, H. W., 7月 2008, 於: Computer Physics Communications. 179, 1-3, p. 107-111 5 p.

  研究成果: Article › 同行評審

  • Triodes 100%
  • Field emission 87%
  • triodes 86%
  • Carbon nanotubes 72%
  • Current density 66%
  10 引文 斯高帕斯（Scopus）

• Parallel solution of large-scale eigenvalue problem for master equation in protein folding dynamics

  Li, Y., Yu, S. M. & Li, Y. L., 1 5月 2008, 於: Journal of Parallel and Distributed Computing. 68, 5, p. 678-685 8 p.

  研究成果: Article › 同行評審

  • Linux 100%
  • Protein folding 92%
  • Protein Folding 91%
  • Master Equation 76%
  • Large-scale Problems 75%
  2 引文 斯高帕斯（Scopus）

• Strained CMOS devices with shallow-trench-isolation stress buffer layers

  Li, Y-M., Chen, H. M., Yu, S. M., Hwang, J. R. & Yang, F. L., 4月 2008, 於: IEEE Transactions on Electron Devices. 55, 4, p. 1085-1089 5 p., 4457870.

  研究成果: Article › 同行評審

  • Buffer layers 100%
  • MOS devices 97%
  • Buffer Solution 45%
  • Current Gain 41%
  • Stress Relaxation 31%
  15 引文 斯高帕斯（Scopus）

• Surface conduction electron emission in palladium hydrogenation nanogaps

  Li, Y-M. & Lo, H. Y., 21 4月 2008, 於: Journal of Physics D: Applied Physics. 41, 8, p. 1-6 6 p., 085301.

  研究成果: Article › 同行評審

  • Electron emission 100%
  • Conduction Electron 82%
  • Electron Emission 81%
  • Palladium 78%
  • Field emission 76%
  15 引文 斯高帕斯（Scopus）

• Temperature dependence on the contact size of GeSbTe films for phase change memories

  Li, Y-M., Yu, S. M., Hwang, C. H. & Kuo, Y. T., 9月 2008, 於: Journal of Computational Electronics. 7, 3, p. 138-141 4 p.

  研究成果: Article › 同行評審

  • Temperature Dependence 100%
  • Phase change memory 92%
  • Phase Change 89%
  • heaters 67%
  • Contact 55%
  6 引文 斯高帕斯（Scopus）

• Three-dimensional simulation of field emission triode structure using carbon-nanotube emitters

  Li, Y-M. & Yeh, T. C., 28 1月 2008, 於: Journal of Computational Electronics. 7, 3, p. 332-336 5 p.

  研究成果: Article › 同行評審

  • Field Emission 100%
  • Carbon Nanotubes 80%
  • Triodes 78%
  • Oxides 73%
  • Aluminum 71%
  4 引文 斯高帕斯（Scopus）

• UV illumination technique for leakage current reduction in a-Si:H thin-film transistors

  Li, Y-M., Hwang, C. H., Chen, C. L., Yan, S. & Lou, J. C., 11月 2008, 於: IEEE Transactions on Electron Devices. 55, 11, p. 3314-3318 5 p.

  研究成果: Article › 同行評審

  • Leakage Current 100%
  • Thin film transistors 97%
  • Leakage currents 81%
  • Illumination 67%
  • Lighting 60%
  13 引文 斯高帕斯（Scopus）
• 2007

  A coupled-simulation-and-optimization approach to nanodevice fabrication with minimization of electrical characteristics fluctuation

  Li, Y-M. & Yu, S. M., 11月 2007, 於: IEEE Transactions on Semiconductor Manufacturing. 20, 4, p. 432-438 7 p., 4369343.

  研究成果: Article › 同行評審

  • MOS devices 100%
  • semiconductor devices 73%
  • CMOS 64%
  • Fabrication 53%
  • Voltage 52%
  46 引文 斯高帕斯（Scopus）

• A floating gate design for electrostatic discharge protection circuits

  Chou, H. M., Lee, J. W. & Li, Y-M., 2月 2007, 於: Integration, the VLSI Journal. 40, 2, p. 161-166 6 p.

  研究成果: Article › 同行評審

  • Electrostatic discharge 100%
  • Networks (circuits) 42%
  • MOS devices 35%
  • Oxides 21%
  • Switches 9%
  8 引文 斯高帕斯（Scopus）

• Analytical solution of nonlinear Poisson equation for symmetric double-gate metal-oxide-semiconductor field effect transistors

  Lo, S. C., Li, Y-M. & Yu, S. M., 7月 2007, 於: Mathematical and Computer Modelling. 46, 1-2, p. 180-188 9 p.

  研究成果: Article › 同行評審

  開啟存取

  • Field-effect Transistor 100%
  • MOSFET 96%
  • Oxides 78%
  • Poisson equation 72%
  • Semiconductors 66%
  11 引文 斯高帕斯（Scopus）

• An automatic parameter extraction technique for advanced CMOS device modeling using genetic algorithm

  Li, Y-M., 2月 2007, 於: Microelectronic Engineering. 84, 2, p. 260-272 13 p.

  研究成果: Article › 同行評審

  • Semiconductor device models 100%
  • MOS devices 81%
  • Parameter extraction 75%
  • genetic algorithms 66%
  • semiconductor devices 60%
  36 引文 斯高帕斯（Scopus）

• An optimal silicidation technique for electrostatic discharge protection sub-100 nm CMOS devices in VLSI circuit

  Yu, S. M., Lee, J. W. & Li, Y-M., 2月 2007, 於: Microelectronic Engineering. 84, 2, p. 213-217 5 p.

  研究成果: Article › 同行評審

  • Electrostatic Discharge 100%
  • Silicides 87%
  • Electrostatic discharge 83%
  • very large scale integration 76%
  • VLSI circuits 75%

• A two-dimensional thin-film transistor simulation using adaptive computing technique

  Li, Y-M., 1 1月 2007, 於: Applied Mathematics and Computation. 184, 1 SPEC. ISS., p. 73-85 13 p.

  研究成果: Article › 同行評審

  • Thin-film Transistor 100%
  • Drift-diffusion Equations 70%
  • Thin film transistors 61%
  • Iterative methods 52%
  • Silicon 45%
  14 引文 斯高帕斯（Scopus）

• Discrete-dopant-induced characteristic fluctuations in 16 nm multiple-gate silicon-on-insulator devices

  Li, Y. & Hwang, C. H., 26 10月 2007, 於: Journal of Applied Physics. 102, 8, 084509.

  研究成果: Article › 同行評審

  • insulators 100%
  • silicon 73%
  • field effect transistors 26%
  • fins 20%
  • immunity 19%
  56 引文 斯高帕斯（Scopus）

• Effect of fin angle on electrical characteristics of nanoscale round-top-gate bulk FinFETs

  Li, Y. & Hwang, C. H., 12月 2007, 於: IEEE Transactions on Electron Devices. 54, 12, p. 3426-3429 4 p.

  研究成果: Article › 同行評審

  • Field effect transistors 100%
  • Field Effect 92%
  • Silicon 36%
  • Silicon wafers 28%
  • MOSFET devices 27%
  54 引文 斯高帕斯（Scopus）

• Electrical characteristic fluctuations in 16 nm bulk-FinFET devices

  Li, Y-M. & Hwang, C. H., 9月 2007, 於: Microelectronic Engineering. 84, 9-10, p. 2093-2096 4 p.

  研究成果: Article › 同行評審

  • FinFET 100%
  • Doping (additives) 87%
  • Voltage 56%
  • Time and motion study 52%
  • Simulation 49%
  17 引文 斯高帕斯（Scopus）

• Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale CMOS and SOI devices

  Li, Y-M., Yu, S. M. & Chen, H. M., 9月 2007, 於: Microelectronic Engineering. 84, 9-10, p. 2117-2120 4 p.

  研究成果: Article › 同行評審

  • MOSFET devices 100%
  • Doping (additives) 95%
  • Threshold voltage 94%
  • Field Effect 85%
  • threshold voltage 81%
  15 引文 斯高帕斯（Scopus）
• 2006

  A drain-current model for DG PMOSFETs with fabricated 35 nm device comparison

  Mckenzie, T. G. & Li, Y-M., 2006, 於: International Journal of Computational Science and Engineering. 2, 3-4, p. 144-147 4 p.

  研究成果: Article › 同行評審

  • Drain current 100%
  • Model 25%
  • Poisson equation 20%
  • Degradation 19%
  • Continuity Equation 19%
  1 引文 斯高帕斯（Scopus）

• A simulation-based evolutionary technique for inverse doping profile problem of sub-65 nm CMOS devices

  Li, Y. & Chen, C. K., 12月 2006, 於: Journal of Computational Electronics. 5, 4, p. 365-370 6 p.

  研究成果: Article › 同行評審

  • Semiconductor doping 100%
  • MOS devices 91%
  • Oxides 91%
  • Semiconductor Devices 89%
  • Metals 74%
  3 引文 斯高帕斯（Scopus）

• Comparison of random-dopant-induced threshold voltage fluctuation in nanoscale single-, double-, and surrounding-gate field-effect transistors

  Li, Y-M. & Yu, S. M., 7 9月 2006, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 9 A, p. 6860-6865 6 p.

  研究成果: Article › 同行評審

  • Gates (transistor) 100%
  • Doping (additives) 78%
  • Threshold voltage 77%
  • threshold voltage 66%
  • field effect transistors 55%
  51 引文 斯高帕斯（Scopus）

• Effective electrostatic discharge protection circuit design using novel fully suicided N-MOSFETs in sub-100-nm device era

  Lee, J. W. & Li, Y-M., 5月 2006, 於: IEEE Transactions on Nanotechnology. 5, 3, p. 211-215 5 p.

  研究成果: Article › 同行評審

  • Electrostatic discharge 100%
  • Networks (circuits) 42%
  • Resistors 18%
  5 引文 斯高帕斯（Scopus）

• Numerical simulation and comparison of electrical characteristics between uniaxial strained bulk and SOI FinFETs

  Li, Y-M., 12月 2006, 於: Journal of Computational Electronics. 5, 4, p. 371-376 6 p.

  研究成果: Article › 同行評審

  • Silicon-on-insulator 100%
  • Field-effect Transistor 88%
  • fins 59%
  • Numerical Comparisons 55%
  • Field effect transistors 53%
  2 引文 斯高帕斯（Scopus）

• Numerical simulation of random dopant fluctuation in sub-65 nm metal-oxide-semiconductor field effect transistors

  Lo, S. C. & Li, Y-M., 1月 2006, 於: WSEAS Transactions on Mathematics. 5, 1, p. 129-138 10 p.

  研究成果: Article › 同行評審

  • Field-effect Transistor 100%
  • Semiconductors 80%
  • Oxides 78%
  • MOSFET devices 66%
  • Metals 63%
  1 引文 斯高帕斯（Scopus）

• Numerical solutions of a master equation for protein folding kinetics

  Li, Y-M., 2006, 於: International Journal of Bioinformatics Research and Applications. 2, 4, p. 420-429 10 p.

  研究成果: Article › 同行評審

  • Protein folding 100%
  • Master Equation 96%
  • Protein Folding 80%
  • Computational efficiency 66%
  • Numerical methods 60%
• 2005

  A compact model for electrostatic discharge protection nanoelectronics simulation

  Chou, H. M., Yu, S. M., Lee, J. W. & Li, Y-M., 11 11月 2005, 於: International Journal of Nanotechnology. 2, 3, p. 226-238 13 p.

  研究成果: Article › 同行評審

  • Electrostatic Discharge 100%
  • Nanoelectronics 88%
  • Electrostatic discharge 83%
  • circuit protection 71%
  • electrostatics 48%

• A comparative study of electrical characteristic on sub-10-nm double-gate MOSFETs

  Li, Y-M. & Chou, H. M., 9月 2005, 於: IEEE Transactions on Nanotechnology. 4, 5, p. 645-647 3 p.

  研究成果: Article › 同行評審

  • MOSFET devices 100%
  • Fabrication 31%
  • Threshold voltage 23%
  • Silicon 16%
  55 引文 斯高帕斯（Scopus）

• An iterative method for single and vertically stacked semiconductor quantum dots simulation

  Li, Y-M., 10月 2005, 於: Mathematical and Computer Modelling. 42, 7-8, p. 711-718 8 p.

  研究成果: Article › 同行評審

  開啟存取

  • Semiconductor quantum dots 100%
  • Quantum Dots 79%
  • Semiconductors 57%
  • Iterative methods 52%
  • Electron 49%
  9 引文 斯高帕斯（Scopus）

• A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation

  Li, Y-M. & Yu, S. M., 1 3月 2005, 於: Journal of Computational and Applied Mathematics. 175, 1 SPEC. ISS., p. 87-99 13 p.

  研究成果: Article › 同行評審

  開啟存取

  • MOSFET 100%
  • Adaptive Method 69%
  • Finite volume method 65%
  • Finite Volume Method 64%
  • Field-effect Transistor 38%
  42 引文 斯高帕斯（Scopus）

• Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs

  Li, Y., Chou, H. M. & Lee, J. W., 9月 2005, 於: IEEE Transactions on Nanotechnology. 4, 5, p. 510-516 7 p.

  研究成果: Article › 同行評審

  • FinFET 100%
  • Nanowires 96%
  • Field effect transistors 33%
  • Capacitance 13%
  • Fabrication 11%
  101 引文 斯高帕斯（Scopus）

• Magnetization and magnetic susceptibility in nanoscale vertically coupled semiconductor quantum rings

  Li, Y-M., 4月 2005, 於: Journal of Computational Electronics. 4, 1-2, p. 135-138 4 p.

  研究成果: Article › 同行評審

  • Magnetic Susceptibility 100%
  • Magnetic susceptibility 94%
  • Magnetization 76%
  • Semiconductors 69%
  • Magnetic Field 55%
  10 引文 斯高帕斯（Scopus）