Yi-Ming Li

2012

Effect of flash lamp annealing and laser spike annealing on random dopant fluctuation of 15-nm metal-oxide-semiconductor devices

Cheng, H. W., Hwang, C. H., Chao, K. A. & Li, Y., 2012, 於: Journal of Nanoscience and Nanotechnology. 12, 3, p. 2462-2466 5 p.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

K·p wurtzite Hamiltonian and optical matrix with bulk inversion asymmetry

Chen, C. N., Su, W. L., Wang, W. T., Jen, J. Y. & Li, Y., 10 1月 2012, 於: Modern Physics Letters B. 26, 1, 1150002.

研究成果: Article › 同行評審

Random Interface-traps-induced electrical characteristic fluctuation in 16-nm-gate high-κ/metal gate complementary metal-oxide-semiconductor device and inverter circuit

Li, Y. & Cheng, H. W., 4月 2012, 於: Japanese journal of applied physics. 51, 4 PART 2, 04DC08.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

Random work-function-induced threshold voltage fluctuation in metal-gate MOS devices by Monte Carlo simulation

Li, Y. & Cheng, H. W., 2012, 於: IEEE Transactions on Semiconductor Manufacturing. 25, 2, p. 266-271 6 p., 6112722.

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

Statistical device simulation of physical and electrical characteristic fluctuations in 16-nm-gate high-κ/metal gate MOSFETs in the presence of random discrete dopants and random interface traps

Li, Y. & Cheng, H. W., 11月 2012, 於: Solid-State Electronics. 77, p. 12-19 8 p.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

Threshold voltage fluctuation in 16-nm-gate FinFETs induced by random work function of nanosized metal grain

Li, Y., Cheng, H. W. & Hwang, C. H., 2012, 於: Journal of Nanoscience and Nanotechnology. 12, 6, p. 4485-4488 4 p.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductor

Chen, C. N., Chang, S. H., Su, W. L., Jen, J. Y. & Li, Y., 9月 2012, 於: Semiconductors. 46, 9, p. 1126-1134 9 p.

研究成果: Article › 同行評審

2011

16-NM Multigate and multifin mosfet devices and SRAM circuits

Cheng, H. W. & Li, Y., 12月 2011, 於: International Journal of Electrical Engineering. 18, 6, p. 277-283 7 p.

研究成果: Article › 同行評審

Dual-material gate approach to suppression of random-dopant-induced characteristic fluctuation in 16nm metal-oxide-semiconductor field-effect-transistor devices

Li, Y., Lee, K. F., Yiu, C. Y., Chiu, Y. Y. & Chang, R. W., 4月 2011, 於: Japanese journal of applied physics. 50, 4 PART 2, 04DC07.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Dynamic characteristic optimization of 14 a-Si:H TFTs gate driver circuit using evolutionary methodology for display panel manufacturing

Li, Y., Lee, K. F., Lo, I. H., Chiang, C. H. & Huang, K. Y., 2011, 於: IEEE/OSA Journal of Display Technology. 7, 5, p. 274-280 7 p., 5742762.

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

General expressions for ellipsoidal-valley quantum transport in arbitrary growth direction: Non-equilibrium Green's function

Chen, C. N., Su, W. L., Lee, M. E., Jen, J. Y. & Li, Y., 6月 2011, 於: Japanese journal of applied physics. 50, 6 PART 1, 060201.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

Hybrid differential evolution and particle swarm optimization approach to surface-potential-based model parameter extraction for nanoscale MOSFETs

Li, Y. & Tseng, Y. H., 11 4月 2011, 於: Materials and Manufacturing Processes. 26, 3, p. 388-397 10 p.

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

Hydrothermally roughened surface-enhanced Raman scattering-active substrates with low background signals for chemical sensing application

Yang, J. Y., Cheng, H. W., Yu, C., Li, Y., Lin, C. H. & Lu, K. L., 3月 2011, 於: Journal of Nanoscience and Nanotechnology. 11, 3, p. 2012-2017 6 p.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs

Li, Y., Cheng, H. W. & Chiu, Y. Y., 7月 2011, 於: Microelectronic Engineering. 88, 7, p. 1269-1271 3 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Investigation of Raman enhancement in hydrothermally roughened SERS-active substrates

Cheng, H. W., Li, Y. & Yang, J. Y., 1月 2011, 於: Computer Physics Communications. 182, 1, p. 260-262 3 p.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

K·p zincblende Hamiltonian and optical matrix with bulk inversion asymmetry

Chen, C. N., Su, W. L., Lee, M. E., Jen, J. Y. & Li, Y., 8月 2011, 於: Japanese journal of applied physics. 50, 8 PART 1, 081202.

研究成果: Article › 同行評審

Modelling competition in global LCD TV industry

Tsai, B. H. & Li, Y., 1 9月 2011, 於: Applied Economics. 43, 22, p. 2969-2981 13 p.

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

Nanosized-metal-grain-induced characteristic fluctuation in 16nm complementary metal-oxide-semiconductor devices and digital circuits

Li, Y. & Cheng, H. W., 4月 2011, 於: Japanese journal of applied physics. 50, 4 PART 2, 04DC22.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

Nanosized metal grains induced electrical characteristic fluctuation in 16-nm-gate high-κ/metal gate bulk FinFET devices

Li, Y., Cheng, H. W., Yiu, C. Y. & Su, H. W., 7月 2011, 於: Microelectronic Engineering. 88, 7, p. 1240-1242 3 p.

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

New structure of dual-material gate approach to suppress random-dopant-induced characteristic fluctuation in 16 nm metal-oxide- semiconductor field-effect-transistor devices

Su, H. W., Cheng, H. W. & Li, Y-M., 12月 2011, 於: International Journal of Electrical Engineering. 18, 6, p. 291-297 7 p.

研究成果: Article › 同行評審

Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFET

Li, Y., Cheng, H. W. & Han, M. H., 1月 2011, 於: Computer Physics Communications. 182, 1, p. 96-98 3 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Surface-Enhanced Ramen Scattering Active Substrates: A novel hydrothermally roughened nanostructure for biological and chemical detections

Yang, J. Y., Cheng, H. W., Chen, Y., Li, Y. & Lin, C. H., 3月 2011, 於: IEEE Nanotechnology Magazine. 5, 1, p. 12-16 5 p.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

2010

A growth model for marketing evolution of multi-generation NAND flash memory

Chiang, S. Y., Li, Y. & Yu, H. C., 2010, 於: International Journal of Computational Science and Engineering. 5, 1, p. 50-57 8 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Asymmetric gate capacitance and dynamic characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants

Lee, K. F., Li, Y. & Hwang, C. H., 2010, 於: Semiconductor Science and Technology. 25, 4, 045006.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

Comparative study of multigate and multifin metal-oxide-semiconductor field-effect transistor

Cheng, H. W. & Li, Y., 4月 2010, 於: Japanese journal of applied physics. 49, 4 PART 2, 04DC09.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell

Lee, K. F., Li, Y., Li, T. Y., Su, Z. C. & Hwang, C. H., 5月 2010, 於: Microelectronics Reliability. 50, 5, p. 647-651 5 p.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Discrete-dopant-induced power-delay characteristic fluctuation in 16nm complementary metal-oxide-semiconductor with high dielectric constant material

Han, M. H., Li, Y. & Hwang, C. H., 4月 2010, 於: Japanese journal of applied physics. 49, 4 PART 2, 04DC02.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Fabrication and configuration development of silicon nitride sub-wavelength structures for solar cell application

Sahool, K. C., Chang, E. Y., Li, Y., Lin, M. K. & Huang, J. H., 1 9月 2010, 於: Journal of Nanoscience and Nanotechnology. 10, 9, p. 5692-5699 8 p.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications

Lee, H. M., Sahoo, K. C., Li, Y., Wu, J. C. & Chang, E. Y., 1 10月 2010, 於: Thin Solid Films. 518, 24, p. 7204-7208 5 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Forecasting global adoption of crystal display televisions with modified product diffusion model

Tsai, B. H., Li, Y. & Lee, G. H., 1 5月 2010, 於: Computers and Industrial Engineering. 58, 4, p. 553-562 10 p.

研究成果: Article › 同行評審

31 引文斯高帕斯（Scopus）

Monotone iterative method for numerical solution of nonlinear ODEs in MOSFET RF circuit simulation

Li, Y., 2月 2010, 於: Mathematical and Computer Modelling. 51, 3-4, p. 320-328 9 p.

研究成果: Article › 同行評審

開啟存取

3 引文斯高帕斯（Scopus）

Novel metamorphic HEMTs with highly doped InGaAs source/drain regions for high frequency applications

Sahoo, K. C., Kuo, C. I., Li, Y. & Chang, E. Y., 1 10月 2010, 於: IEEE Transactions on Electron Devices. 57, 10, p. 2594-2598 5 p., 5560785.

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

Optimization on configuration of surface conduction electron-emitters

Cheng, H. W. & Li, Y., 5月 2010, 於: Microelectronics Reliability. 50, 5, p. 699-703 5 p.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Process-variation effect, metal-gate work-function fluctuation, and random-dopant fluctuation in emerging CMOS technologies

Li, Y., Hwang, C. H., Li, T. Y. & Han, M. H., 2月 2010, 於: IEEE Transactions on Electron Devices. 57, 2, p. 437-447 11 p., 5361404.

研究成果: Article › 同行評審

109 引文斯高帕斯（Scopus）

Shape effect of silicon nitride subwavelength structure on reflectance for silicon solar cells

Sahoo, K. C., Li, Y. & Chang, E. Y., 1 10月 2010, 於: IEEE Transactions on Electron Devices. 57, 10, p. 2427-2433 7 p., 5535073.

研究成果: Article › 同行評審

32 引文斯高帕斯（Scopus）

Simulation-based evolutionary method in antenna design optimization

Li, Y., 4月 2010, 於: Mathematical and Computer Modelling. 51, 7-8, p. 944-955 12 p.

研究成果: Article › 同行評審

開啟存取

16 引文斯高帕斯（Scopus）

Simulation of characteristic variation in 16 nm gate FinFET devices due to intrinsic parameter fluctuations

Li, Y., Hwang, C. H. & Han, M. H., 5 3月 2010, 於: Nanotechnology. 21, 9, 095203.

研究成果: Article › 同行評審

25 引文斯高帕斯（Scopus）

Statistical simulation of static noise margin variability in static random access memory

Li, Y., Cheng, H. W. & Han, M. H., 11月 2010, 於: IEEE Transactions on Semiconductor Manufacturing. 23, 4, p. 509-516 8 p., 5.

研究成果: Article › 同行評審

20 引文斯高帕斯（Scopus）

Statistical variability in FinFET devices with intrinsic parameter fluctuations

Hwang, C. H., Li, Y. & Han, M. H., 5月 2010, 於: Microelectronics Reliability. 50, 5, p. 635-638 4 p.

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

Temperature-aware floorplanning via geometric programming

Chen, Y. C. & Li, Y., 4月 2010, 於: Mathematical and Computer Modelling. 51, 7-8, p. 927-934 8 p.

研究成果: Article › 同行評審

開啟存取

14 引文斯高帕斯（Scopus）

The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit

Han, M. H., Li, Y. & Hwang, C. H., 5月 2010, 於: Microelectronics Reliability. 50, 5, p. 657-661 5 p.

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

2009

A simulation-based evolutionary approach to LNA circuit design optimization

Li, Y-M., 1 3月 2009, 於: Applied Mathematics and Computation. 209, 1, p. 57-67 11 p.

研究成果: Article › 同行評審

27 引文斯高帕斯（Scopus）

Cluster evolution of IC industry from Taiwan to China

Tsai, B. H. & Li, Y., 1 10月 2009, 於: Technological Forecasting and Social Change. 76, 8, p. 1092-1104 13 p.

研究成果: Article › 同行評審

41 引文斯高帕斯（Scopus）

DC baseband and high-frequency characteristics of a silicon nanowire field effect transistor circuit

Li, Y-M. & Hwang, C. H., 27 2月 2009, 於: Semiconductor Science and Technology. 24, 4, 045004.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

Discrete-dopant-fluctuated transient behavior and variability suppression in 16-nm-gate complementary metal-oxide-semiconductor field-effect transistors

Li, Y-M., Hwang, C. H. & Cheng, H. W., 4月 2009, 於: Japanese journal of applied physics. 48, 4 PART 2, 04C051.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Discrete-dopant-induced timing fluctuation and suppression in nanoscale CMOS circuit

Li, Y-M., Hwang, C. H. & Li, T. Y., 5月 2009, 於: IEEE Transactions on Circuits and Systems I: Regular Papers. 56, 5, p. 379-383 5 p., 10664240.

研究成果: Article › 同行評審

19 引文斯高帕斯（Scopus）

Doping profile and Ge-dose optimization for silicon-germanium heterojunction bipolar transistors

Li, Y-M., Chen, Y. C. & Hwang, C. H., 22 9月 2009, 於: Semiconductor Science and Technology. 24, 10, 105020.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Electrical characteristics dependence on the channel fin aspect ratio of multi-fin field effect transistors

Cheng, H. W. & Li, Y-M., 27 10月 2009, 於: Semiconductor Science and Technology. 24, 11, 115021.

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

Emission efficiency dependence on the width and thickness of nanogaps in surface-conduction electron-emitter displays

Li, Y-M. & Lo, H. Y., 5月 2009, 於: Journal of Nanoscience and Nanotechnology. 9, 5, p. 3271-3277 7 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Field emission dependence on the tilted angle of palladium nanogaps for surface conduction electron-emitter displays

Li, Y-M. & Cheng, H. W., 6月 2009, 於: Micro and Nano Letters. 4, 2, p. 69-73 5 p.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

李 義明

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李義明