李 義明

研究成果

每年研究成果 1999 2003 2004 2005 2006 2007 2008 2009 2010 2011 2016 2020 2022 2023

• 241 Article
• 231 Conference contribution
• 15 Conference article
• 13 Editorial
• 15 更多
  • 7 Paper
  • 6 Chapter
  • 1 Book
  • 1 Review article

每年研究成果

每年研究成果

搜尋結果

• 2018

  Analysis of In-Line Process Parameters of the Unity Gain Frequency of HKMG Bulk FinFET Devices

  Su, P. H. & Li, Y-M., 3月 2018, 於: IEEE Electron Device Letters. 39, 3, p. 335-338 4 p.

  研究成果: Article › 同行評審

  • Transconductance 100%
  • FinFET 83%
  • Field effect transistors 69%
  • Field Effect 64%
  • Sensitivity analysis 57%
  5 引文 斯高帕斯（Scopus）

• DC/AC/RF Characteristic Fluctuations Induced by Various Random Discrete Dopants of Gate-All-Around Silicon Nanowire n-MOSFETs

  Sung, W. L. & Li, Y-M., 6月 2018, 於: IEEE Transactions on Electron Devices. 65, 6, p. 2638-2646 9 p.

  研究成果: Article › 同行評審

  • Nanowires 100%
  • Doping (additives) 89%
  • Doping Material 70%
  • Nanowire 69%
  • Silicon 63%
  24 引文 斯高帕斯（Scopus）

• Impact of Doping Concentration on Electronic Properties of Transition Metal-Doped Monolayer Molybdenum Disulfide

  Tsai, Y. C. & Li, Y-M., 2月 2018, 於: IEEE Transactions on Electron Devices. 65, 2, p. 733-738 6 p., 8248623.

  研究成果: Article › 同行評審

  • Electronic properties 100%
  • Transition metals 95%
  • Monolayers 84%
  • Molybdenum Disulfide 77%
  • Molybdenum 75%
  11 引文 斯高帕斯（Scopus）
• 2017

  Design and Simulation of Intermediate Band Solar Cell with Ultradense Type-II Multilayer Ge/Si Quantum Dot Superlattice

  Tsai, Y. C., Lee, M-Y., Li, Y-M. & Samukawa, S., 1 11月 2017, 於: IEEE Transactions on Electron Devices. 64, 11, p. 4547-4553 7 p., 8057574.

  研究成果: Article › 同行評審

  • Germanium 100%
  • Solar cells 78%
  • Conversion efficiency 78%
  • Superlattice 76%
  • Multilayers 72%
  9 引文 斯高帕斯（Scopus）

• Effect of ALD-Al₂O₃ Passivated Silicon Quantum Dot Superlattices on p/i/n⁺ Solar Cells

  Rahman, M. M., Tsai, Y. C., Lee, M-Y., Higo, A., Li, Y-M., Hoshi, Y., Usami, N. & Samukawa, S., 1 7月 2017, 於: IEEE Transactions on Electron Devices. 64, 7, p. 2886-2892 7 p., 7935526.

  研究成果: Article › 同行評審

  • Superlattices 100%
  • Amorphous silicon 58%
  • Solar cells 56%
  • Superlattice 54%
  • Aluminum oxide 51%
  6 引文 斯高帕斯（Scopus）

• Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

  Mizubayashi, W., Noda, S., Ishikawa, Y., Nishi, T., Kikuchi, A., Ota, H., Su, P. H., Li, Y., Samukawa, S. & Endo, K., 2月 2017, 於: Applied Physics Express. 10, 2, 026501.

  研究成果: Article › 同行評審

  開啟存取

  • Ultraviolet radiation 100%
  • fins 92%
  • Etching 82%
  • Field effect transistors 82%
  • Irradiation 78%
  33 引文 斯高帕斯（Scopus）

• Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide

  Tsai, Y. C., Li, Y-M. & Samukawa, S., 1 12月 2017, 於: Nanotechnology. 28, 48, p. 1-9 9 p., 485401.

  研究成果: Article › 同行評審

  • Passivation 100%
  • Silicon Carbide 92%
  • Silicon carbide 88%
  • Solar cells 87%
  • Superlattice 84%

• Shape effect of surface-enhanced Raman scattering-active-substrate-based nanoparticles on local electric field for biochemical sensing application

  Lee, E. T., Cheng, H. W., Yang, J. Y. & Li, Y., 2月 2017, 於: Journal of Nanoscience and Nanotechnology. 17, 2, p. 871-877 7 p.

  研究成果: Article › 同行評審

  • Raman scattering 100%
  • Nanoparticles 68%
  • Electric fields 63%
  • Electric Field 61%
  • Raman spectra 53%
  3 引文 斯高帕斯（Scopus）
• 2016

  32-nm multigate Si-nTFET with microwave-annealed abrupt junction

  Hou, F. J., Sung, P. J., Hsueh, F. K., Wu, C. T., Lee, Y. J., Chang, M. N., Li, Y-M. & Hou, T-H., 1 5月 2016, 於: IEEE Transactions on Electron Devices. 63, 5, p. 1808-1813 6 p., 7225121.

  研究成果: Article › 同行評審

  • Microwaves 100%
  • Microwave 92%
  • Field effect transistors 91%
  • Annealing 84%
  • Tunnels 71%
  8 引文 斯高帕斯（Scopus）

• A novel driving method for high-performance amorphous silicon gate driver circuits in flat panel display industry

  Chiang, C. H. & Li, Y., 10月 2016, 於: Journal of Display Technology. 12, 10, p. 1051-1056 6 p., 7462993.

  研究成果: Article › 同行評審

  • Flat panel displays 100%
  • Amorphous silicon 96%
  • Amorphous Silicon 95%
  • flat panel displays 91%
  • amorphous silicon 64%
  8 引文 斯高帕斯（Scopus）

• A systematic approach to correlation analysis of in-line process parameters for process variation effect on electrical characteristic of 16-nm HKMG Bulk FinFET devices

  Su, P. H. & Li, Y., 8月 2016, 於: IEEE Transactions on Semiconductor Manufacturing. 29, 3, p. 209-216 8 p., 7500068.

  研究成果: Article › 同行評審

  • FinFET 100%
  • spacers 64%
  • Threshold voltage 57%
  • Voltage 56%
  • Mining 44%
  7 引文 斯高帕斯（Scopus）

• Exploration of inter-die bulk fin-typed field effect transistor process variation for reduction of device variability

  Su, P. H. & Li, Y., 1 6月 2016, 於: Journal of Nanoscience and Nanotechnology. 16, 6, p. 6124-6130 7 p.

  研究成果: Article › 同行評審

  • fins 100%
  • Field effect transistors 89%
  • Field Effect 82%
  • field effect transistors 65%
  • FinFET 53%

• Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells

  Rahman, M. M., Lee, M-Y., Tsai, Y. C., Higo, A., Sekhar, H., Igarashi, M., Syazwan, M. E., Hoshi, Y., Sawano, K., Usami, N., Li, Y-M. & Samukawa, S., 1 6月 2016, 於: Progress in Photovoltaics: Research and Applications. 24, 6, p. 774-780 7 p.

  研究成果: Article › 同行評審

  • Semiconductor quantum wells 100%
  • Silicon solar cells 87%
  • Solar cells 67%
  • Superlattice 65%
  • Quantum Dot 56%
  20 引文 斯高帕斯（Scopus）

• Low power and high driving capability of amorphous silicon gate driver circuit

  Chiang, C. H. & Li, Y., 1月 2016, 於: Journal of Display Technology. 12, 1, p. 55-61 7 p., 7153527.

  研究成果: Article › 同行評審

  • Amorphous silicon 100%
  • Amorphous Silicon 99%
  • amorphous silicon 67%
  • Networks (circuits) 40%
  • Electric power utilization 32%
  2 引文 斯高帕斯（Scopus）

• Miniband formulation in Ge/Si quantum dot array

  Tsai, Y. C., Lee, M. Y., Li, Y. & Samukawa, S., 4月 2016, 於: Japanese journal of applied physics. 55, 4, 04EJ14.

  研究成果: Article › 同行評審

  • Electron energy levels 100%
  • quantum dots 66%
  • formulations 59%
  • Bandwidth 54%
  • energy levels 46%
  7 引文 斯高帕斯（Scopus）

• Optimal design of a novel amorphous silicon gate driver circuit using a TFT-circuit-simulation-based multi-objective evolutionary algorithm

  Hung, Y. H., Hung, S. C., Chiang, C. H. & Li, Y., 2 4月 2016, 於: Journal of Information Display. 17, 2, p. 51-58 8 p.

  研究成果: Article › 同行評審

  開啟存取

  • Amorphous silicon 100%
  • Amorphous Silicon 99%
  • Thin film transistors 93%
  • Circuit simulation 82%
  • Evolutionary algorithms 67%
  2 引文 斯高帕斯（Scopus）

• Optimal design of the multiple-apertures-GaN-based vertical HEMTs with SiO₂current blocking layer

  Shrestha, N. M., Li, Y-M. & Chang, E. Y., 1 3月 2016, 於: Journal of Computational Electronics. 15, 1, p. 154-162 9 p.

  研究成果: Article › 同行評審

  • Gallium Nitride 100%
  • Gallium nitride 66%
  • gallium nitrides 56%
  • High electron mobility transistors 55%
  • high electron mobility transistors 49%
  12 引文 斯高帕斯（Scopus）

• Optimal geometry aspect ratio of ellipse-shaped-surrounding-gate nanowire field effect transistors

  Li, Y., 1 1月 2016, 於: Journal of Nanoscience and Nanotechnology. 16, 1, p. 920-923 4 p.

  研究成果: Article › 同行評審

  • Nanowires 100%
  • ellipses 92%
  • Field effect transistors 86%
  • Field Effect 80%
  • Aspect ratio 74%
  1 引文 斯高帕斯（Scopus）

• Process-Dependence Analysis for Characteristic Improvement of Ring Oscillator Using 16-nm Bulk FinFET Devices

  Su, P. H. & Li, Y., 7 7月 2016, 於: IEEE Transactions on Electron Devices. 63, 8, p. 3058-3063 6 p., 7505920.

  研究成果: Article › 同行評審

  • FinFET 100%
  • Implant 76%
  • Molecular Cluster 50%
  • Resistance 49%
  • Integrated circuits 36%
  6 引文 斯高帕斯（Scopus）

• Simulation Study of Multilayer Si/SiC Quantum Dot Superlattice for Solar Cell Applications

  Tsai, Y. C., Lee, M-Y., Li, Y-M., Rahman, M. M. & Samukawa, S., 1 6月 2016, 於: IEEE Electron Device Letters. 37, 6, p. 758-761 4 p., 7463544.

  研究成果: Article › 同行評審

  • Solar cells 100%
  • Conversion efficiency 99%
  • Superlattice 96%
  • Multilayers 91%
  • Multilayer 84%
  15 引文 斯高帕斯（Scopus）

• Step buffer layer of Al_0.25Ga_0.75N/Al_0.08Ga_0.92N on P-InAlN gate normally-off high electron mobility transistors

  Shrestha, N. M., Li, Y-M. & Chang, E. Y., 9 6月 2016, 於: Semiconductor Science and Technology. 31, 7, 075006.

  研究成果: Article › 同行評審

  • Buffer layers 100%
  • Electron Mobility 83%
  • High electron mobility transistors 81%
  • high electron mobility transistors 72%
  • Threshold voltage 61%
  12 引文 斯高帕斯（Scopus）

• Suspended Diamond-Shaped Nanowire with Four {111} Facets for High-Performance Ge Gate-All-Around FETs

  Hou, F. J., Sung, P. J., Hsueh, F. K., Wu, C. T., Lee, Y. J., Li, Y-M., Samukawa, S. & Hou, T-H., 1 10月 2016, 於: IEEE Transactions on Electron Devices. 63, 10, p. 3837-3843 7 p., 7542120.

  研究成果: Article › 同行評審

  • Multiple-gate field-effect transistors 100%
  • Germanium 78%
  • Nanowires 72%
  • Diamonds 58%
  • Nanowire 50%
  5 引文 斯高帕斯（Scopus）

• Tuning of the electron g factor in defect-free GaAs nanodisks (vol 92, 245423, 2015)

  Yang, L-W., Tsai, Y-C., Li, Y-M., Higo, A., Murayama, A., Samukawa, S. & Voskoboynikov, O., 7 1月 2016, 於: Physical Review B - Condensed Matter and Materials Physics. 93, 3, 1 p., 039902.

  研究成果: Article › 同行評審
• 2015

  A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer

  Shrestha, N. M., Wang, Y. Y., Li, Y. & Chang, E. Y., 1 8月 2015, 於: Vacuum. 118, p. 59-63 5 p.

  研究成果: Article › 同行評審

  • Silicon oxides 100%
  • Silicon Oxide 85%
  • Electron Mobility 82%
  • High electron mobility transistors 79%
  • silicon oxides 72%
  18 引文 斯高帕斯（Scopus）

• Capacitance characteristic optimization of germanium MOSFETs with aluminum oxide by using a semiconductor-device-simulation-based multi-objective evolutionary algorithm method

  Li, Y. & Chen, C. Y., 3 4月 2015, 於: Materials and Manufacturing Processes. 30, 4, p. 520-528 9 p.

  研究成果: Article › 同行評審

  • Germanium 100%
  • Semiconductor devices 87%
  • MOSFET devices 87%
  • Field Effect 74%
  • Aluminum oxide 71%
  6 引文 斯高帕斯（Scopus）

• Circuit-Simulation-Based Multi-Objective Evolutionary Algorithm for Design Optimization of a-Si:H TFTs Gate Driver Circuits under Multilevel Clock Driving

  Hung, S. C., Chiang, C. H. & Li, Y., 1 8月 2015, 於: IEEE/OSA Journal of Display Technology. 11, 8, p. 640-645 6 p., 7006637.

  研究成果: Article › 同行評審

  • Amorphous silicon 100%
  • Amorphous Silicon 99%
  • design optimization 89%
  • Circuit simulation 82%
  • clocks 73%
  4 引文 斯高帕斯（Scopus）

• Design, Fabrication and Characterization of Low-Noise and High-Reliability Amorphous Silicon Gate Driver Circuit for Advanced FPD Applications

  Chiang, C. H. & Li, Y., 1 8月 2015, 於: IEEE/OSA Journal of Display Technology. 11, 8, p. 633-639 7 p., 7005398.

  研究成果: Article › 同行評審

  • Amorphous silicon 100%
  • Amorphous Silicon 99%
  • low noise 70%
  • amorphous silicon 67%
  • Fabrication 54%
  1 引文 斯高帕斯（Scopus）

• Determination of source-and-drain series resistance in 16-nm-Gate FinFET devices

  Su, P. H. & Li, Y., 1 5月 2015, 於: IEEE Transactions on Electron Devices. 62, 5, p. 1663-1667 5 p., 7083705.

  研究成果: Article › 同行評審

  • FinFET 100%
  • Resistance 49%
  • Doping (additives) 43%
  • Current density 37%
  • Current Density 14%
  10 引文 斯高帕斯（Scopus）

• Device simulation and multi-objective genetic algorithm-based optimization of Germanium metal-oxide-semiconductor structure

  Chen, C. Y. & Li, Y., 2015, 於: Computer Methods in Materials Science. 15, 1, p. 258-263 6 p.

  研究成果: Article › 同行評審

  • Germanium 100%
  • Oxide semiconductors 88%
  • Capacitance 63%
  • Genetic algorithms 52%
  • Metals 47%
  1 引文 斯高帕斯（Scopus）

• Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants

  Huang, W. T. & Li, Y., 1 12月 2015, 於: Nanoscale Research Letters. 10, 1, p. 1-8 8 p., 116.

  研究成果: Article › 同行評審

  開啟存取

  • fins 100%
  • Doping (additives) 92%
  • Field effect transistors 89%
  • Field Effect 82%
  • Doping Material 73%
  21 引文 斯高帕斯（Scopus）

• Miniband Calculation of 3-D Nanostructure Array for Solar Cell Applications

  Lee, M. Y., Li, Y. & Samukawa, S., 14 9月 2015, 於: IEEE Transactions on Electron Devices. 62, 11, p. 3709-3714 6 p., 7265048.

  研究成果: Article › 同行評審

  • Nanocrystals 100%
  • Nanodisc 90%
  • Germanium 89%
  • Nanostructures 81%
  • Density of State 71%
  16 引文 斯高帕斯（Scopus）

• Simulation study of 14-nm-gate III-V trigate field effect transistor devices with In_1-xGa_xAs channel capping layer

  Huang, C. H. & Li, Y., 1 6月 2015, 於: AIP Advances. 5, 6, 067107.

  研究成果: Article › 同行評審

  開啟存取

  • field effect transistors 100%
  • simulation 48%
  • fins 38%
  • gallium 16%
  • metal oxide semiconductors 16%

• Source/drain series resistance extraction in HKMG multifin bulk FinFET devices

  Su, P. H. & Li, Y., 1 5月 2015, 於: IEEE Transactions on Semiconductor Manufacturing. 28, 2, p. 193-199 7 p., 7057668.

  研究成果: Article › 同行評審

  • fins 100%
  • Field effect transistors 89%
  • Field Effect 82%
  • field effect transistors 65%
  • Resistance 52%
  8 引文 斯高帕斯（Scopus）

• Upper/lower-side random dopant fluctuation on 16-nm-gate HKMG bulk FinFET

  Li, Y., Huang, W. T., Chen, C. Y. & Chen, Y. Y., 2015, 於: International Journal of Nanotechnology. 12, 1-2, p. 126-138 13 p.

  研究成果: Article › 同行評審

  • FinFET 100%
  • Doping (additives) 87%
  • fins 74%
  • Doping Material 68%
  • Aspect ratio 18%
  1 引文 斯高帕斯（Scopus）
• 2014

  Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps

  Hsu, S. C. & Li, Y., 1 12月 2014, 於: Nanoscale Research Letters. 9, 1, 633.

  研究成果: Article › 同行評審

  開啟存取

  • Interface Trap 100%
  • fins 72%
  • Threshold voltage 66%
  • Field effect transistors 64%
  • Field Effect 59%
  8 引文 斯高帕斯（Scopus）

• High-reliability and low-noise amorphous-silicon gate with a novel clock-driving methodology

  Chiang, C. H. & Li, Y., 1月 2014, 於: Journal of Information Display. 15, 1, p. 5-11 7 p.

  研究成果: Article › 同行評審

  開啟存取

  • Amorphous silicon 100%
  • Amorphous Silicon 99%
  • Clocks 62%
  • Thin film transistors 46%
  • Networks (circuits) 40%
  5 引文 斯高帕斯（Scopus）

• Random-work-function-induced characteristic fluctuation in 16-nm-gate bulk and SOI FinFETs

  Li, Y., Chen, C. Y. & Chen, Y. Y., 10月 2014, 於: International Journal of Nanotechnology. 11, 12, p. 1029-1038 10 p.

  研究成果: Article › 同行評審

  • FinFET 100%
  • fins 93%
  • Nonconductor 87%
  • Field effect transistors 83%
  • Field Effect 77%
  4 引文 斯高帕斯（Scopus）

• Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layer

  Shrestha, N. M., Li, Y. & Chang, E. Y., 4月 2014, 於: Japanese journal of applied physics. 53, 4 SPEC. ISSUE, 04EF08.

  研究成果: Article › 同行評審

  • Two dimensional electron gas 100%
  • High electron mobility transistors 82%
  • spacers 74%
  • high electron mobility transistors 73%
  • Scattering 40%
  35 引文 斯高帕斯（Scopus）
• 2013

  Computer simulation of electron energy state spin-splitting in nanoscale InAs/GaAs semiconductor quantum rings

  Li, Y., 7月 2013, 於: Mathematical and Computer Modelling. 58, 1-2, p. 300-305 6 p.

  研究成果: Article › 同行評審

  開啟存取

  • Gallium Arsenide 100%
  • Semiconductors 70%
  • Electron energy levels 69%
  • Electron 61%
  • Electrons 60%
  1 引文 斯高帕斯（Scopus）

• Device simulation-based multiobjective evolutionary algorithm for process optimization of semiconductor solar cells

  Li, Y., Chen, Y. Y., Chen, C. Y., Shen, C. H., Cheng, H. W., Lo, I. H. & Chen, C. N., 3 7月 2013, 於: Materials and Manufacturing Processes. 28, 7, p. 761-767 7 p.

  研究成果: Article › 同行評審

  • Solar cells 100%
  • Evolutionary algorithms 86%
  • Semiconductor materials 83%
  • Solar Cell 81%
  • Semiconductor 71%
  6 引文 斯高帕斯（Scopus）

• Geometric programming approach to doping profile design optimization of metal-oxide-semiconductor devices

  Li, Y. & Chen, Y. C., 7月 2013, 於: Mathematical and Computer Modelling. 58, 1-2, p. 344-354 11 p.

  研究成果: Article › 同行評審

  開啟存取

  • Semiconductor doping 100%
  • MOS devices 91%
  • Oxides 91%
  • Geometric Programming 89%
  • Semiconductor Devices 89%
  8 引文 斯高帕斯（Scopus）

• Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices

  Chen, C. H., Li, Y., Chen, C. Y., Chen, Y. Y., Hsu, S. C., Huang, W. T. & Chu, S. Y., 2013, 於: Microelectronic Engineering. 109, p. 357-359 3 p.

  研究成果: Article › 同行評審

  • FinFET 100%
  • Surface Roughness 78%
  • surface roughness 65%
  • Surface roughness 64%
  • Compound Mobility 59%
  11 引文 斯高帕斯（Scopus）

• Modeling miniband for realistic silicon nanocrystal array

  Hu, W., Budiman, M. F., Igarashi, M., Lee, M. Y., Li, Y. & Samukawa, S., 1 7月 2013, 於: Mathematical and Computer Modelling. 58, 1-2, p. 306-311 6 p.

  研究成果: Article › 同行評審

  開啟存取

  • Nanocrystals 100%
  • Silicon 75%
  • Modeling 35%
  • Solar cells 28%
  • Calculate 24%
  9 引文 斯高帕斯（Scopus）

• Multiband treatment of quantum transport in anisotropic semiconductors: Non-equilibrium Green's function

  Chen, C. N., Chang, S. H., Su, W. L., Jen, J. Y. & Li, Y., 7月 2013, 於: Mathematical and Computer Modelling. 58, 1-2, p. 282-287 6 p.

  研究成果: Article › 同行評審

  開啟存取

  • Quantum Transport 100%
  • Non-equilibrium 71%
  • Semiconductors 69%
  • Green's function 69%
  • Semiconductor materials 52%
  3 引文 斯高帕斯（Scopus）

• Optimal power consumption design of the amorphous silicon thin-film transistor gate driver circuit for 10.1-in. display panel manufacturing

  Li, Y., Chiang, C. H., Chen, Y. Y. & Chen, C. Y., 3月 2013, 於: Journal of Information Display. 14, 1, p. 13-19 7 p.

  研究成果: Article › 同行評審

  • Amorphous silicon 100%
  • Amorphous Silicon 99%
  • Thin film transistors 93%
  • Display devices 55%
  • Electric power utilization 54%
  8 引文 斯高帕斯（Scopus）

• Realistic quantum design of silicon quantum dot intermediate band solar cells

  Hu, W., Igarashi, M., Lee, M. Y., Li, Y. & Samukawa, S., 5 7月 2013, 於: Nanotechnology. 24, 26, 265401.

  研究成果: Article › 同行評審

  • Band structure 100%
  • Nanodisc 96%
  • Solar cells 75%
  • Superlattice 73%
  • Electronic Band Structure 71%
  17 引文 斯高帕斯（Scopus）

• Simulation study of type-II Ge/Si quantum dot for solar cell applications

  Hu, W., Maksudur Rahman, M., Lee, M. Y., Li, Y. & Samukawa, S., 17 10月 2013, 於: Journal of Applied Physics. 114, 12, 124509.

  研究成果: Article › 同行評審

  • quantum dots 100%
  • solar cells 95%
  • sun 75%
  • simulation 49%
  • passivity 40%
  24 引文 斯高帕斯（Scopus）

• The intrinsic parameter fluctuation on high-κ/metal gate bulk FinFET devices

  Li, Y., Su, H. W., Chen, Y. Y., Hsu, S. C. & Huang, W. T., 2013, 於: Microelectronic Engineering. 109, p. 302-305 4 p.

  研究成果: Article › 同行評審

  • FinFET 100%
  • Threshold voltage 64%
  • Voltage 56%
  • Metals 50%
  • threshold voltage 44%
  9 引文 斯高帕斯（Scopus）
• 2012

  3D simulation of morphological effect on reflectance of Si3N4 subwavelength structures for silicon solar cells

  Li, Y., Lee, M. Y., Cheng, H. W. & Lu, Z. L., 10 4月 2012, 於: Nanoscale Research Letters. 7, p. 1-11 11 p.

  研究成果: Article › 同行評審

  開啟存取

  • Silicon solar cells 100%
  • Solar Cell 63%
  • Pyramidal Crystal 55%
  • solar cells 54%
  • reflectance 51%
  8 引文 斯高帕斯（Scopus）

• Application of block diagonal technique to a Hamiltonian matrix in performing spin-splitting calculations for GaN wurtzite materials

  Chen, C. N., Chang, S. H., Su, W. L., Wang, W. T., Kao, H. F., Jen, J. Y. & Li, Y., 2月 2012, 於: Journal of the Korean Physical Society. 60, 3, p. 403-409 7 p.

  研究成果: Article › 同行評審

  • wurtzite 100%
  • inversions 40%
  • asymmetry 39%
  • crystal field theory 24%
  • conduction bands 21%