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查看斯高帕斯 (Scopus) 概要
李 義明
教授
電信工程研究所
https://orcid.org/0000-0001-7374-0964
電話
03-5712121#52974
電子郵件
ymli
nycu.edu
tw
網站
http://www.ymlab.org/
h-index
h10-index
h5-index
4184
引文
32
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1031
引文
16
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
444
引文
12
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1999
2023
每年研究成果
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指紋
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(20)
研究成果
(515)
獎項
(4)
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(1)
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(10)
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查看啟用 Yi-Ming Li 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Engineering & Materials Science
Amorphous silicon
22%
Aspect ratio
17%
Band structure
17%
Capacitance
20%
Circuit simulation
20%
Computer simulation
16%
Display devices
12%
Doping (additives)
100%
Electron energy levels
34%
Electron transitions
13%
Electronic structure
15%
Electrons
43%
Electrostatic discharge
17%
Energy gap
15%
Etching
16%
Fabrication
17%
Ferroelectric materials
15%
Field effect transistors
83%
Field emission
14%
FinFET
73%
Genetic algorithms
12%
Geometry
13%
Germanium
21%
Hamiltonians
18%
High electron mobility transistors
14%
Iterative methods
23%
Linux
13%
Magnetic fields
15%
Metals
49%
MOS devices
27%
MOSFET devices
63%
Nanopillars
15%
Nanosheets
40%
Nanowires
49%
Networks (circuits)
42%
Oxide semiconductors
21%
Oxides
13%
Parameter extraction
16%
Polysilicon
14%
Semiconductor devices
24%
Semiconductor doping
15%
Semiconductor materials
29%
Semiconductor quantum dots
29%
Silicon
65%
Silicon nitride
12%
Solar cells
29%
Thin film transistors
30%
Threshold voltage
55%
Transistors
20%
Tunnel field effect transistors
12%
Chemical Compounds
Amorphous Silicon
16%
Application
7%
Band Gap
6%
Chemical Passivation
6%
Doping Material
28%
Drain Current
7%
Effective Mass
7%
Electron Mobility
6%
Electron Particle
9%
Electronic Band Structure
6%
Electrostatic Discharge
5%
Energy
8%
Energy State
10%
Error
5%
Etching
10%
Field Effect
57%
Field Emission
7%
Interface Trap
21%
Leakage Current
5%
Length
6%
Magnetic Field
8%
Metal
16%
Nanopillar
9%
Nanosheet
15%
Nanowire
21%
Nitride
10%
Oxide
5%
Quantum Dot
20%
Reduction
5%
Semiconductor
22%
Shape
8%
Silicon Carbide
5%
Simulation
48%
Solar Cell
18%
Superlattice
12%
Surface
5%
Time
8%
Transconductance
7%
Tunneling
7%
Voltage
35%
Work Function
37%
Physics & Astronomy
amorphous silicon
5%
approximation
6%
aspect ratio
8%
bipolar transistors
7%
boundary conditions
5%
capacitance
5%
CMOS
20%
conduction electrons
6%
direct current
5%
electron energy
10%
electrostatics
5%
emitters
6%
energy
5%
etching
7%
fabrication
6%
field effect transistors
57%
field emission
7%
fins
29%
genetic algorithms
7%
germanium
5%
heterojunctions
5%
high electron mobility transistors
5%
insulators
6%
inversions
6%
magnetic fields
6%
metal oxide semiconductors
22%
metals
12%
methodology
5%
nanowires
11%
neutral beams
11%
optimization
8%
performance
7%
quantum dots
16%
rings
11%
semiconductor devices
17%
silicon
21%
simulation
24%
solar cells
8%
spacers
5%
threshold voltage
21%
transistor circuits
5%
transistors
10%
traps
9%
