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查看斯高帕斯 (Scopus) 概要
李 義明
教授
電信工程研究所
https://orcid.org/0000-0001-7374-0964
電話
03-5712121#52974
電子郵件
ymli
nycu.edu
tw
網站
http://www.ymlab.org/
h-index
h10-index
h5-index
2805
引文
23
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
936
引文
15
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
375
引文
11
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1999
2023
每年研究成果
概覽
指紋
網路
計畫
(20)
研究成果
(509)
獎項
(4)
活動
(1)
類似的個人檔案
(7)
如果您對這些純文本內容做了任何改變，很快就會看到。
指紋
查看啟用 Yi-Ming Li 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering & Materials Science
Doping (additives)
100%
Field effect transistors
80%
FinFET
74%
Silicon
63%
MOSFET devices
62%
Threshold voltage
55%
Nanowires
50%
Metals
48%
Electrons
43%
Networks (circuits)
42%
Nanosheets
36%
Electron energy levels
34%
Thin film transistors
30%
Solar cells
29%
Semiconductor quantum dots
29%
Semiconductor materials
29%
MOS devices
27%
Semiconductor devices
24%
Iterative methods
24%
Amorphous silicon
22%
Oxide semiconductors
21%
Germanium
21%
Capacitance
20%
Transistors
20%
Circuit simulation
19%
Hamiltonians
18%
Electrostatic discharge
17%
Fabrication
17%
Band structure
17%
Aspect ratio
17%
Parameter extraction
16%
Computer simulation
16%
Ferroelectric materials
15%
Etching
15%
Nanopillars
15%
Energy gap
15%
Semiconductor doping
15%
Magnetic fields
15%
Electronic structure
15%
Field emission
14%
Polysilicon
14%
Oxides
13%
Electron transitions
13%
High electron mobility transistors
13%
Linux
13%
Geometry
13%
Tunnel field effect transistors
12%
Display devices
12%
Silicon nitride
12%
Genetic algorithms
12%
Chemical Compounds
Field Effect
57%
Simulation
47%
Work Function
36%
Voltage
34%
Doping Material
28%
Semiconductor
22%
Nanowire
21%
Interface Trap
21%
Quantum Dot
20%
Solar Cell
18%
Metal
16%
Amorphous Silicon
16%
Nanosheet
13%
Superlattice
12%
Nitride
10%
Energy State
10%
Etching
10%
Electron Particle
9%
Nanopillar
9%
Shape
8%
Energy
8%
Magnetic Field
8%
Time
7%
Field Emission
7%
Application
7%
Tunneling
7%
Effective Mass
7%
Band Gap
6%
Electron Mobility
6%
Electronic Band Structure
6%
Chemical Passivation
6%
Transconductance
6%
Length
6%
Reduction
5%
Surface
5%
Oxide
5%
Electrostatic Discharge
5%
Leakage Current
5%
Silicon Carbide
5%
Hamiltonian
5%
Reflectivity
5%
Physics & Astronomy
field effect transistors
56%
fins
29%
simulation
24%
metal oxide semiconductors
22%
silicon
21%
threshold voltage
21%
CMOS
21%
semiconductor devices
17%
quantum dots
16%
nanowires
11%
metals
11%
neutral beams
11%
rings
11%
transistors
10%
electron energy
10%
traps
9%
aspect ratio
8%
optimization
8%
solar cells
8%
field emission
7%
performance
7%
bipolar transistors
7%
etching
7%
genetic algorithms
7%
emitters
6%
insulators
6%
inversions
6%
approximation
6%
conduction electrons
6%
fabrication
6%
magnetic fields
6%
energy
5%
heterojunctions
5%
transistor circuits
5%
electrostatics
5%
boundary conditions
5%
spacers
5%
direct current
5%
capacitance
5%
germanium
5%
high electron mobility transistors
5%
methodology
5%
amorphous silicon
5%
