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查看斯高帕斯 (Scopus) 概要
李 義明
教授
國立陽明交通大學
https://orcid.org/0000-0001-7374-0964
h-index
h10-index
h5-index
4537
引文
33
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1206
引文
18
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
639
引文
15
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1999
2024
每年研究成果
概覽
指紋
網路
計畫
(20)
研究成果
(533)
獎項
(4)
活動
(1)
類似的個人檔案
(6)
指紋
查看啟用 Yi-Ming Li 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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重量
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Keyphrases
Characteristic Fluctuation
57%
MOSFET
57%
Electrical Characteristics
54%
Gate-all-around
53%
Work Function Fluctuation
39%
Field-effect Transistors
35%
Random Dopants
33%
Threshold Voltage
31%
Bulk FinFET
27%
Device Simulation
26%
Metal Gate
26%
FinFET Devices
23%
Random Dopant Fluctuation
23%
Fin Field-effect Transistor (FinFET)
22%
Discrete Dopants
22%
Three-dimensional (3D)
21%
Threshold Voltage Shift
21%
Simulation-based
20%
Transistor Device
19%
Quantum Ring
18%
Nanograins
17%
Monotone Iterative Technique
16%
NSFET
16%
Circuit Simulation
16%
Complementary Metal Oxide Semiconductor
15%
SiGe
15%
Aspect Ratio
15%
Genetic Algorithm
15%
Gate Driver
15%
Circuit Design
14%
Electron Energy States
14%
Device Characteristics
14%
Numerical Simulation
14%
Semiconductor Quantum Dots
14%
Semiconductor Quantum Ring
14%
Surrounding Gate
13%
Process Variation Effect
13%
CMOS Devices
13%
Transistor
13%
Silicon Nanosheet (SiNS)
13%
Metal-oxide-semiconductor Devices
13%
Interface Traps
13%
Design Optimization
13%
Tunnel Field-effect Transistor
13%
Multi-channel
13%
High Performance
13%
Double Gate
12%
Intrinsic Fluctuations
12%
Solar Cell Applications
12%
NWFET
12%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Dopants
75%
Field-Effect Transistor
66%
Nanoscale
51%
Nanowire
35%
Metal Gate
30%
Field Effect Transistor
29%
Nanosheet
27%
Semiconductor Device
25%
Solar Cell
24%
Quantum Dot
23%
Thin-Film Transistor
23%
Interface Trap
21%
Process Variation
20%
Aspect Ratio
18%
Circuit Simulation
18%
Voltage Fluctuation
18%
Genetic Algorithm
17%
Computer Simulation
17%
Driver Circuit
16%
Inverter
14%
Circuit Design
14%
Design Optimization
13%
Nitride
13%
Gate Capacitance
13%
Superlattice
12%
Nodes
12%
Gallium Arsenide
12%
Energy Engineering
12%
Quantum Correction
11%
Metal Oxide Semiconductor
11%
Intrinsic Parameter
11%
Multichannel
11%
Reflectance
10%
Frequency Characteristic
10%
Complementary Metal-Oxide-Semiconductor
10%
Model Parameter
10%
Field Emission
10%
Minibands
10%
Integrated Circuit
10%
Silicon on Insulator
10%
Electrostatic Discharge
10%
Heterojunctions
10%
Noise Margin
9%
Bipolar Transistor
9%
Complementary Metal-Oxide-Semiconductor Device
9%
Tunnel Construction
9%
Electron Energy
9%
Current Drain
9%
Device Performance
9%
