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查看斯高帕斯 (Scopus) 概要
吳 耀銓
教授
材料科學與工程學系
智慧半導體奈米系統技術研究中心
https://orcid.org/0000-0003-3333-9505
電話
03-51-31555#55378
電子郵件
sermonwu
faculty.nctu.edu
tw
網站
https://yswlab.nctu.edu.tw/
h-index
h10-index
h5-index
1618
引文
20
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
454
引文
13
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
244
引文
9
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1990 …
2024
每年研究成果
概覽
指紋
網路
計畫
(19)
研究成果
(186)
類似的個人檔案
(6)
指紋
查看啟用 Yew-Chung Sermon Wu 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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重量
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Keyphrases
Metal-induced Crystallization
73%
GaN-based Light-emitting Diodes
67%
Ni Metal
51%
Patterned Sapphire Substrate
47%
Light-emitting Diodes
41%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
39%
GaAs Wafer
37%
Wafer
33%
Wafer Bonding
31%
Thin-film Transistors
31%
Electrical Properties
29%
Annealing
28%
Electrical Performance
27%
Amorphous Crystallization
27%
Indium Gallium Nitride (InGaN)
27%
Crystallization
25%
Amorphous Silicon
25%
Gettering
25%
Sapphire Substrate
22%
Polycrystalline Silicon Film
21%
Gallium Arsenide
21%
Polysilicon
18%
Laser Lift-off
17%
High Performance
17%
Induced Crystallization
17%
Oxide Layer
17%
Bonding Process
16%
Bonded Interface
16%
ZnO@ZnS
15%
Amorphous Silicon Thin Film
15%
Indium Tin Oxide
15%
Wet Etching
15%
Undoped
15%
Leakage Current
14%
Performance Improvement
14%
GaN-based LED
14%
Luminous Intensity
14%
GaN Surface
14%
Sapphire
13%
Amorphous Si
13%
C-plane
13%
Interfacial Voids
13%
ZnO Nanorods
12%
Silica
12%
Gettering Layer
11%
Sidewall
11%
Chemical Oxide
11%
UV Light
11%
P-GaN
11%
P-type
10%
Material Science
Light-Emitting Diode
100%
Film
88%
Silicon
73%
Sapphire
70%
Thin-Film Transistor
56%
Surface (Surface Science)
46%
Gallium Arsenide
44%
Oxide Compound
43%
Amorphous Silicon
34%
ZnO
33%
Gettering
32%
Annealing
26%
Density
22%
Thin Films
18%
Nanorod
18%
Indium Tin Oxide
17%
Wet Etching
14%
Nanostructure
13%
Optical Loss
12%
Electrical Property
11%
Electronic Circuit
10%
Electroless Deposition
9%
Nucleation
9%
Epitaxy
8%
Nanocomposite
8%
Aluminum Nitride
8%
Diamond
8%
Electrical Resistance
7%
Buffer Layer
7%
Polishing
7%
Morphology
7%
Thermal Stability
6%
Hot Carrier
5%
Permittivity
5%
Plating
5%
Zinc Oxide
5%
Surface Passivation
5%
Engineering
Light-Emitting Diode
82%
Sapphire Substrate
43%
Polysilicon
41%
Wafer Bonding
38%
Gallium Arsenide
30%
Thin-Film Transistor
29%
Oxide Layer
18%
Nanorod
16%
Bonding Process
15%
Thin Films
14%
Nanomaterial
13%
Optical Loss
12%
Silicon Dioxide
11%
Core-Shell
11%
Electrical Performance
10%
Compressive Stress
10%
Reverse Bias
9%
Bonded Interface
9%
Side Wall
9%
Output Power
8%
Rapid Thermal Annealing
8%
Sensing Property
8%
Cu Film
8%
Hydrogen Gas
8%
Indium-Tin-Oxide
7%
Harmonic Generation
7%
Crystal Quality
7%
Passivation
7%
Excimer Laser
7%
Diamond
7%
Light Output Power
7%
Bonding Temperature
7%
Multiple Material
6%
Subthreshold Slope
6%
Elevated Temperature
6%
Low-Temperature
6%
Nanocomposite
6%
Current Ratio
6%
Nanoscale
6%
Film Silicon
6%
Sensing Performance
6%
Bonding Mechanism
6%
Si Substrate
5%
Growth Mechanism
5%
Polycrystalline
5%
Gas Sensor
5%
Flat Surface
5%
Device Performance
5%
Ultraviolet Light
5%
