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查看斯高帕斯 (Scopus) 概要
黃 彥霖
助理教授
新世代功能性物質研究中心
材料科學與工程學系
https://orcid.org/0000-0002-6129-8547
電話
03-5712121 #55359
電子郵件
yenlinhuang
nycu.edu
tw
網站
http://sites.google.com/view/yllab/home
h-index
h10-index
h5-index
1677
引文
18
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1630
引文
17
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1148
引文
13
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2013
2024
每年研究成果
概覽
指紋
網路
計畫
(3)
研究成果
(36)
類似的個人檔案
(6)
指紋
查看啟用 Yen-Lin Huang 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Material Science
Bismuth Ferrite
100%
Multiferroic Material
90%
Ferroelectric Material
82%
Film
58%
Heterojunction
43%
Thin Films
33%
Oxide Compound
25%
Density
24%
Surface (Surface Science)
24%
Domain Wall
22%
Anisotropy
20%
Ferroelectricity
16%
Ferroelectric Thin Films
13%
Spin Polarization
12%
Superconductivity
12%
Magnetic Memory
12%
Piezoelectricity
10%
Nucleation
10%
Ionic Liquid
10%
Annealing
10%
Magnetism
9%
Thick Films
9%
Transistor
9%
Ferromagnetism
9%
Nanodevice
9%
Photoemission Electron Microscopy
8%
Electrostatic Interaction
8%
Aluminum Oxide
8%
Nanopore
8%
Long-Range Order
8%
Tensile Strain
8%
Spin Glass
8%
Spin System
8%
Functional Ceramics
8%
Energy Density
8%
Ferroelectric Film
8%
Novel Material
8%
Surface Reconstruction
8%
Polymer Network
8%
Pulsed Laser Deposition
8%
Lattice Vibration
8%
Biomimetic Material
8%
Energy Landscape
8%
Magnesium Oxide
6%
Magnetic Property
6%
Silicon
5%
Materials Property
5%
Keyphrases
BiFeO3
74%
Magnetoelectric
56%
Multiferroics
37%
Room Temperature
34%
Spin-orbit
32%
Multiferroic BiFeO3
28%
Spintronics
28%
Domain Walls
20%
Ferroelectric Switching
20%
Ultrathin
20%
BiFeO3 Film
19%
Heterostructure
18%
Low Power
17%
Switching Energy
17%
Nanomagnet
17%
Spin-orbit Torque
16%
Electric Field (E-field)
15%
Magnetoelectric Coupling
14%
SrTiO3
13%
Ferroelectric Thin Film
13%
Exchange Coupling
13%
Ferroelectric Domains
12%
Ising
12%
Voltage Control
12%
Ferromagnet
12%
CoFe
12%
Domain Patterns
12%
Switching Dynamics
12%
Electric Field Control
12%
La0.7Sr0.3MnO3
12%
Complementary Metal Oxide Semiconductor
12%
Phase Transition
12%
Nanodevices
11%
Logic Devices
11%
Magnetization
10%
Emerging Memory Technologies
10%
Multiferroic Materials
10%
Non-volatile Memory
10%
Spintronic Devices
10%
Phase-field Model
10%
Periodic Domain
10%
Ferromagnetism
10%
Spin Ice
9%
Multiferroic Heterostructure
9%
Bound Charges
9%
Ferroelectric Materials
9%
Geometrical Frustration
9%
SrRuO3
9%
Order Parameter
8%
Anti-damping
8%
Engineering
Thin Films
30%
Room Temperature
26%
Heterojunctions
24%
Free Field
16%
Realization
16%
Building Block
16%
Domain Wall
13%
Engineering
10%
Nanoscale
10%
Magnetic Storage
10%
Magnetoelectronics
10%
Compressive Strain
10%
Time Domain
8%
Oxygen Vacancy
8%
Resistive
8%
Size Effect
8%
Terahertz
8%
Critical Size
8%
Critical Thickness
8%
Surface Potential
8%
Filtration
8%
Two Dimensional
8%
Photoelectron
8%
Piezoelectric
8%
Dynamic Behavior
8%
Tensiles
8%
Ferroelectric Crystal
8%
Scanning Probe Microscopy
8%
Geometric Frustration
8%
Response Time
8%
Engineering Strain
8%
Interlayer
8%
Output Voltage
8%
Polarization State
8%
Propagation Direction
8%
Voltage Scaling
8%
Magnetization Reversal
8%
Elastic Wave
8%
Axial Strain
8%
Integrated Circuit
8%
Angular Momentum
8%
Linear Momentum
8%
Nanometre
8%
Dielectrics
6%
Atomic Layer
5%
Electric Field
5%
