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國立陽明交通大學研發優勢分析平台 首頁
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查看斯高帕斯 (Scopus) 概要
黃 彥霖
助理教授
新世代功能性物質研究中心
材料科學與工程學系
https://orcid.org/0000-0002-6129-8547
電話
03-5712121 #55359
電子郵件
yenlinhuang
nycu.edu
tw
網站
http://sites.google.com/view/yllab/home
h-index
h10-index
h5-index
2411
引文
22
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2350
引文
22
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
440
引文
11
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2013
2026
每年研究成果
概覽
指紋
網路
計畫
(3)
研究成果
(51)
類似的個人檔案
(6)
指紋
查看啟用 Yen-Lin Huang 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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重量
按字母排序
Material Science
Bismuth Ferrite
100%
Multiferroic Material
80%
Ferroelectric Material
76%
Oxide Compound
56%
Film
52%
Heterojunction
44%
Thin Films
42%
Density
22%
Surface (Surface Science)
19%
Domain Wall
17%
Anisotropy
16%
Oxide Film
16%
Vanadium
16%
Ferroelectricity
13%
Carbon Nanotube
12%
Scanning Electron Microscopy
12%
Ferroelectric Thin Films
10%
Spin Polarization
9%
Magnetic Memory
9%
Transition Metal
9%
Superconductivity
8%
Piezoelectricity
8%
Nucleation
8%
Ionic Liquid
8%
Annealing
8%
Magnetism
7%
Thick Films
7%
Transistor
7%
Ferromagnetism
7%
Nanodevice
7%
Photoemission Electron Microscopy
6%
Electrostatic Interaction
6%
Aluminum Oxide
6%
Nanopore
6%
Long-Range Order
6%
Tensile Strain
6%
Spin Glass
6%
Spin System
6%
Functional Ceramics
6%
Energy Density
6%
Ferroelectric Film
6%
Novel Material
6%
Surface Reconstruction
6%
Polymer Network
6%
Lattice Vibration
6%
Biomimetic Material
6%
Energy Landscape
6%
Capacitor
6%
Neuromorphic Computing
6%
Diamond Anvil Cell
6%
Keyphrases
BiFeO3
60%
Magnetoelectric
46%
Multiferroics
30%
Multiferroic BiFeO3
29%
Room Temperature
27%
Spin-orbit
27%
Spin-orbit Torque
25%
Heterostructure
23%
Spintronics
22%
Domain Walls
16%
Ferroelectric Switching
16%
Ultrathin
16%
Phase Transition
15%
BiFeO3 Film
15%
La0.7Sr0.3MnO3
14%
Low Power
13%
Switching Energy
13%
Electric Field (E-field)
13%
Nanomagnet
13%
Carbon Nanotube Membrane
12%
Néel Order
12%
PtCo
12%
Magnetic Random Access Memory
12%
Magnetoelectric Coupling
11%
Complementary Metal Oxide Semiconductor
10%
FeCo
10%
SrTiO3
10%
Epitaxial
10%
Ferroelectric Thin Film
10%
Exchange Coupling
10%
Memory Device
10%
Ferroelectric Domains
9%
Ising
9%
Voltage Control
9%
Ferromagnet
9%
CoFe
9%
Domain Patterns
9%
Electric Field Control
9%
As-grown
9%
Free Field
9%
Energy-efficient Memory
9%
SrRuO3
9%
Nanodevices
9%
Logic Devices
9%
Magnetization
8%
Multiferroic Materials
8%
Non-volatile Memory
8%
Spintronic Devices
8%
Strain Engineering
8%
Perpendicular Magnetic Anisotropy
8%
Engineering
Thin Films
24%
Room Temperature
21%
Heterojunctions
19%
Heavy Metal
18%
Ferromagnet
16%
Free Field
12%
Realization
12%
Building Block
12%
Carbon Nanotube
12%
Polycrystalline
12%
Equilibrium State
12%
Oxide Thickness
12%
Domain Wall
10%
Terahertz
9%
Response Time
9%
Engineering
8%
Nanoscale
8%
Magnetic Storage
8%
Magnetoelectronics
8%
Compressive Strain
8%
Oxide Film
7%
Time Domain
6%
Oxygen Vacancy
6%
Resistive
6%
Size Effect
6%
Critical Size
6%
Critical Thickness
6%
Surface Potential
6%
Filtration
6%
Two Dimensional
6%
Photoelectron
6%
Piezoelectric
6%
Dynamic Behavior
6%
Tensiles
6%
Ferroelectric Crystal
6%
Scanning Probe Microscopy
6%
Geometric Frustration
6%
Engineering Strain
6%
Interlayer
6%
Output Voltage
6%
Polarization State
6%
Propagation Direction
6%
Voltage Scaling
6%
Magnetization Reversal
6%
Elastic Wave
6%
Axial Strain
6%
Integrated Circuit
6%
Angular Momentum
6%
Linear Momentum
6%
Nanometre
6%
