陳 衛國

研究成果

每年研究成果 1988 1994 1998 2000 2001 2002 2004 2006 2007 2008 2009 2018

• 89 Article
• 5 Conference article
• 4 Patent
• 3 Paper
• 2 更多
  • 1 Comment/debate
  • 1 Letter

每年研究成果

每年研究成果

搜尋結果

• 2003

  Growth temperature reduction for isoelectronic As-doped GaN

  Lee, W. H., Huang, H. Y., Chen, W. C., Lee, C. F., Chen, W-K., Chen, W. H. & Lee, M. C., 1 3月 2003, 於: Japanese Journal of Applied Physics, Part 2: Letters. 42, 3 A

  研究成果: Letter › 同行評審

  • Growth temperature 100%
  • Hall mobility 62%
  • Photoluminescence 50%
  • Metallorganic chemical vapor deposition 48%
  • Linewidth 38%