陳 衛國

研究成果

每年研究成果 1988 1994 1998 2000 2001 2002 2004 2006 2007 2008 2009 2018

• 89 Article
• 5 Conference article
• 4 Patent
• 3 Paper
• 2 更多
  • 1 Comment/debate
  • 1 Letter

每年研究成果

每年研究成果

搜尋結果

• 2008

  Structural and optical properties of indium-rich InGaN islands

  Tsai, W. C., Lin, H., Ke, W. C., Chang, W-H., Chou, W-C., Chen, W-K. & Lee, M. C., 5月 2008, 於: Physica Status Solidi (C) Current Topics in Solid State Physics. 5, 6, p. 1702-1705 4 p.

  研究成果: Conference article › 同行評審

  • indium 100%
  • optical properties 68%
  • adatoms 35%
  • temperature 31%
  • metalorganic chemical vapor deposition 16%
  2 引文 斯高帕斯（Scopus）

• Structural and optical properties of InN/GaN nanodots grown by metalorganic chemical vapor deposition

  Chang, W-H., Lee, L., Chen, C. Y., Tsai, W. C., Lin, H., Chou, W-C., Lee, M. C. & Chen, W-K., 7月 2008, 於: Physica Status Solidi (C) Current Topics in Solid State Physics. 5, 9, p. 3014-3016 3 p.

  研究成果: Conference article › 同行評審

  • metalorganic chemical vapor deposition 100%
  • optical properties 68%
  • epitaxy 41%
  • flow velocity 33%
  • photoluminescence 29%
  3 引文 斯高帕斯（Scopus）
• 2000

  Gallium K-edge EXAFS study of GaN:Mg films

  Pan, Y. C., Wang, S. F., Lee, W. H., Lin, W. C., Shu, C. K., Chiang, C. I., Lin, C. H., Chang, H., Lee, J. F., Jang, L. Y., Lin, D. S., Lee, M. C., Chen, W. H. & Chen, W-K., 1 1月 2000, 於: Proceedings of SPIE - The International Society for Optical Engineering. 4078, p. 535-543 9 p.

  研究成果: Conference article › 同行評審

  • X ray absorption 100%
  • Gallium 81%
  • Fine Structure 74%
  • Extended X-Ray Absorption Fine Structure 68%
  • Absorption 61%

• Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy

  Shu, C. K., Lee, W. H., Pan, Y. C., Huang, H. Y., Chen, H. H., Chen, W. H., Chen, W-K. & Lee, M. C., 7月 2000, 於: Proceedings of SPIE - The International Society for Optical Engineering. 4078, p. 521-526 6 p.

  研究成果: Conference article › 同行評審

  • Blue shift 100%
  • Photoluminescence 98%
  • Vapor phase epitaxy 92%
  • Epitaxy 90%
  • Vapor Phase Epitaxy 82%
• 1995

  Composition control in the growth of AlAs_1-xSb_x alloys

  Ou, J. & Chen, W-K., 9 5月 1995, 於: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. p. 157-160 4 p., 522102.

  研究成果: Conference article › 同行評審

  • Alloy 100%
  • Chemical analysis 92%
  • Metallorganic vapor phase epitaxy 83%
  • Growth temperature 76%
  • Metallorganic Chemical Vapour Deposition 76%