陳 衛國

研究成果

每年研究成果 1988 1994 1998 2000 2001 2002 2004 2006 2007 2008 2009 2018

• 89 Article
• 5 Conference article
• 4 Patent
• 3 Paper
• 2 更多
  • 1 Comment/debate
  • 1 Letter

每年研究成果

每年研究成果

搜尋結果

• 1994

  Epitaxial growth of AlAs_XSb_1-X by MOCVD

  Chen, W-K. & Ou, J., 12 7月 1994.

  研究成果: Paper › 同行評審

  • Metallorganic chemical vapor deposition 100%
  • Epitaxial growth 89%
  • Epitaxial Growth 77%
  • Liquid Film 30%
  • Growth temperature 25%

• High quality low-temperature GaAs film grown by conventional metalorganic chemical vapor deposition

  Chen, W-K., Chang, C. S. & Chen, W. C., 12 7月 1994, p. 4.8.29-4.8.32. 4 p.

  研究成果: Paper › 同行評審

  • Metallorganic chemical vapor deposition 100%
  • Chemical Vapour Deposition 57%
  • Full width at half maximum 31%
  • Liquid Film 30%
  • Temperature 25%
• 1990

  Low temperature epitaxial growth of indium phosphide

  Chen, W-K., Yang, S. L. & Liu, P. L., 23 4月 1990, p. 116-119. 4 p.

  研究成果: Paper › 同行評審

  • Indium phosphide 100%
  • Epitaxial growth 85%
  • Growth temperature 65%
  • Metallorganic chemical vapor deposition 31%
  • Electron mobility 31%