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查看斯高帕斯 (Scopus) 概要
陳 衛國
教授
電子物理學系
h-index
h10-index
1066
引文
18
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
46
引文
3
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1988 …
2018
每年研究成果
概覽
指紋
網路
計畫
(17)
研究成果
(103)
類似的個人檔案
(6)
指紋
查看啟用 Wei-Kuo Chen 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
Activation Energy
9%
AlAsSb
16%
CdTe Quantum Dots
9%
Chemical Vapor
9%
Cm(III)
10%
Depositional System
13%
Electrical Properties
22%
Epilayer
14%
Epitaxial Film
12%
Epitaxial Growth
13%
Epitaxy
17%
Flow Rate Modulation
20%
GaAs Substrate
9%
Gallium Arsenide
27%
GaN Films
58%
Growth Form
9%
Growth Techniques
8%
Growth Temperature
42%
High Temperature
16%
In-doped
12%
Indium Gallium Nitride (InGaN)
25%
Indium Phosphide
9%
InN Films
15%
Isoelectronic
35%
Low Temperature
15%
Metal Organic Vapor Phase Epitaxy (MOVPE)
43%
Metal-organic Chemical Vapor Deposition (MOCVD)
66%
Metal-organic Materials
16%
Mg Films
12%
Mg-doped GaN
17%
Molecular Beam Epitaxy
14%
N-GaN
11%
Nanodots
22%
Optical Properties
43%
Photoluminescence
39%
Photoluminescence Measurements
9%
Photoluminescence Studies
14%
Quantum Dots
9%
Raman Scattering
15%
Recombination Lifetime
10%
Schottky Diode
8%
Structural Properties
26%
Surface Morphology
8%
Temperature Effect
14%
Time-resolved Photoluminescence
12%
Undoped
11%
V(III)
15%
Vapor Phase Epitaxy
16%
Zinc Selenide
10%
ZnSe Quantum Dots
10%
Material Science
Activation Energy
11%
Annealing
9%
Atomic Force Microscopy
8%
Buffer Layer
9%
Carrier Concentration
11%
Chemical Vapor Deposition
38%
Deep-Level Transient Spectroscopy
7%
Density
12%
Epilayers
17%
Epitaxial Film
9%
Epitaxy
24%
Extended X-Ray Absorption Fine Structure
6%
Film
100%
Gallium Arsenide
33%
Hydrogenation
6%
Indium
20%
Linewidth
7%
Luminescence
11%
Metal-Organic Chemical Vapor Deposition
8%
Molecular Beam Epitaxy
12%
Monolayers
7%
Nanodots
9%
Optical Property
28%
Phase Composition
19%
Photoluminescence
60%
Quantum Dot
16%
Sapphire
16%
Schottky Diode
15%
Surface (Surface Science)
13%
Surface Morphology
8%
Thin Films
9%
Vapor Phase Epitaxy
46%
ZnO
6%
Engineering
Activation Energy
8%
Atomic Force Microscopy
9%
Band Edge
14%
Carrier Concentration
8%
Chemical Vapor Deposition
36%
Conduction Band
8%
Correlation Length
6%
Crystal Structure
7%
Decay Time
8%
Deep Level
26%
Deposition System
9%
Dynamic Response
6%
Emission Peak
9%
Energy Barrier
6%
Epitaxial Film
9%
Experimental Result
8%
Film Quality
7%
Flow Rate
21%
Flow Velocity
21%
Gallium Arsenide
27%
Growth Mode
8%
Growth Temperature
33%
Hydrogenation
6%
Ideality Factor
6%
Low Growth Temperature
7%
Low-Temperature
17%
Metal Organic Chemical Vapor Deposition
9%
Monolayers
7%
Nanodots
6%
Nanoscale
6%
Optical Phonon
6%
Optical Quality
7%
Peak Energy
10%
Phase Composition
22%
Quantum Dot
16%
Raman Spectra
9%
Ray Absorption
6%
Ray Diffraction
7%
Reactant
5%
Recombination Lifetime
12%
Related Defect
7%
Sapphire Substrate
7%
Solid Concentration
6%
Strain Relaxation
6%
Substrate Temperature
6%
Temperature Range
5%
Thin Films
8%
Transients
7%
Valence Band
5%
Vapor Deposition
41%
