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國立陽明交通大學研發優勢分析平台 首頁
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查看斯高帕斯 (Scopus) 概要
陳 衛國
教授
電子物理學系
h-index
h10-index
1075
引文
18
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
46
引文
3
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1988 …
2018
每年研究成果
概覽
指紋
網路
計畫
(17)
研究成果
(103)
類似的個人檔案
(6)
指紋
查看啟用 Wei-Kuo Chen 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
66%
GaN Films
58%
Metal Organic Vapor Phase Epitaxy (MOVPE)
43%
Optical Properties
43%
Growth Temperature
42%
Photoluminescence
39%
Isoelectronic
35%
Gallium Arsenide
27%
Structural Properties
26%
Indium Gallium Nitride (InGaN)
25%
Nanodots
22%
Electrical Properties
22%
Flow Rate Modulation
20%
Mg-doped GaN
17%
Epitaxy
17%
AlAsSb
16%
Metal-organic Materials
16%
High Temperature
16%
Vapor Phase Epitaxy
16%
InN Films
15%
V(III)
15%
Low Temperature
15%
Raman Scattering
15%
Photoluminescence Studies
14%
Molecular Beam Epitaxy
14%
Epilayer
14%
Temperature Effect
14%
Epitaxial Growth
13%
Depositional System
13%
In-doped
12%
Mg Films
12%
Time-resolved Photoluminescence
12%
Epitaxial Film
12%
N-GaN
11%
Undoped
11%
ZnSe Quantum Dots
10%
Recombination Lifetime
10%
Cm(III)
10%
Zinc Selenide
10%
Indium Phosphide
9%
CdTe Quantum Dots
9%
Photoluminescence Measurements
9%
GaAs Substrate
9%
Quantum Dots
9%
Chemical Vapor
9%
Growth Form
9%
Activation Energy
9%
Schottky Diode
8%
Surface Morphology
8%
Growth Techniques
8%
Material Science
Film
100%
Photoluminescence
60%
Vapor Phase Epitaxy
46%
Chemical Vapor Deposition
38%
Gallium Arsenide
33%
Optical Property
28%
Epitaxy
24%
Indium
20%
Phase Composition
19%
Epilayers
17%
Sapphire
16%
Quantum Dot
16%
Schottky Diode
15%
Surface (Surface Science)
13%
Molecular Beam Epitaxy
12%
Density
12%
Activation Energy
11%
Luminescence
11%
Carrier Concentration
11%
Nanodots
9%
Thin Films
9%
Buffer Layer
9%
Annealing
9%
Epitaxial Film
9%
Metal-Organic Chemical Vapor Deposition
8%
Surface Morphology
8%
Atomic Force Microscopy
8%
Deep-Level Transient Spectroscopy
7%
Monolayers
7%
Linewidth
7%
ZnO
6%
Hydrogenation
6%
Extended X-Ray Absorption Fine Structure
6%
Engineering
Vapor Deposition
41%
Chemical Vapor Deposition
36%
Growth Temperature
33%
Gallium Arsenide
27%
Deep Level
26%
Phase Composition
22%
Flow Rate
21%
Flow Velocity
21%
Low-Temperature
17%
Quantum Dot
16%
Band Edge
14%
Recombination Lifetime
12%
Peak Energy
10%
Raman Spectra
9%
Epitaxial Film
9%
Atomic Force Microscopy
9%
Deposition System
9%
Metal Organic Chemical Vapor Deposition
9%
Emission Peak
9%
Growth Mode
8%
Experimental Result
8%
Activation Energy
8%
Thin Films
8%
Decay Time
8%
Conduction Band
8%
Carrier Concentration
8%
Crystal Structure
7%
Ray Diffraction
7%
Monolayers
7%
Film Quality
7%
Optical Quality
7%
Sapphire Substrate
7%
Low Growth Temperature
7%
Related Defect
7%
Transients
7%
Strain Relaxation
6%
Nanodots
6%
Dynamic Response
6%
Ideality Factor
6%
Correlation Length
6%
Energy Barrier
6%
Solid Concentration
6%
Nanoscale
6%
Optical Phonon
6%
Ray Absorption
6%
Hydrogenation
6%
Substrate Temperature
6%
Reactant
5%
Temperature Range
5%
Valence Band
5%
