Wei-I Lee

2019

Structure and Strain Relaxation of GaN Nanorods Grown on Homoepitaxial Surface via Controlling Irregular Mask

Huang, C. H., Pakzad, A., Lee, W-I. & Chou, Y-C., 7 2月 2019, 於: Journal of Physical Chemistry C. 123, 5, p. 3172-3179 8 p.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

2018

Microscopic evidence for the dissociation of water molecules on cleaved GaN(1100)

Wu, S. Y., Lang, L. W., Cai, P. Y., Chen, Y. W., Lai, Y. L., Lin, M. W., Hsu, Y. J., Lee, W-I., Kuo, J. L., Luo, M. F. & Kuo, C. C., 1 1月 2018, 於: Physical Chemistry Chemical Physics. 20, 2, p. 1261-1266 6 p.

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5 引文斯高帕斯（Scopus）

2017

Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon

Wu, K. L., Chou, Y., Su, C. C., Yang, C. C., Lee, W-I. & Chou, Y-C., 1 12月 2017, 於: Scientific reports. 7, 1, 17942.

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16 引文斯高帕斯（Scopus）

2016

Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN_X Schottky Metal Structures for High-Power Applications

Hsieh, T. E., Lin, Y. C., Chu, C. M., Chuang, Y. L., Huang, Y. X., Shi, W. C., Dee, C. F., Majlis, B. Y., Lee, W-I. & Chang, E. Y., 1 7月 2016, 於: Journal of Electronic Materials. 45, 7, p. 3285-3289 5 p.

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5 引文斯高帕斯（Scopus）

Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures

Huang, W. C., Chu, C. M., Wong, Y. Y., Chen, K. W., Lin, Y. K., Wu, C. H., Lee, W-I. & Chang, E. Y., 1 4月 2016, 於: Materials Science in Semiconductor Processing. 45, p. 1-8 8 p.

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26 引文斯高帕斯（Scopus）

Reliability study of high-κ La₂O₃/HfO₂ and HfO₂/La₂O₃ stacking layers on n-In_0.53Ga_0.47As metal-oxide-semiconductor capacitor

Chu, C. M., Lin, Y. C., Lee, W-I., Dee, C. F., Wong, Y. Y., Majlis, B. Y., Salleh, M. M., Yap, S. L. & Chang, E. Y., 1 2月 2016, 於: Applied Physics Express. 9, 2, 021203.

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6 引文斯高帕斯（Scopus）

The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

Huang, W. C., Chu, C. M., Hsieh, C. F., Wong, Y. Y., Chen, K. W., Lee, W-I., Tu, Y. Y., Chang, E. Y., Dee, C. F., Majlis, B. Y. & Yap, S. L., 1 2月 2016, 於: Journal of Electronic Materials. 45, 2, p. 859-866 8 p.

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4 引文斯高帕斯（Scopus）

2015

High-efficiency and low assembly-dependent chip-scale package for white light-emitting diodes

Huang, C. H., Chen, K. J., Tsai, M. T., Shih, M. H., Sun, C-W., Lee, W-I., Lin, C-C. & Kuo, H-C., 21 4月 2015, 於: Journal of Photonics for Energy. 5, 1, 1 p., 14087SS.

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17 引文斯高帕斯（Scopus）

Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer

Chiu, C. H., Lin, Y. W., Tsai, M. T., Lin, B. C., Li, Z. Y., Tu, P. M., Huang, S. C., Hsu, E., Uen, W. Y., Lee, W-I. & Kuo, H-C., 15 3月 2015, 於: Journal of Crystal Growth. 414, p. 258-262 5 p.

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

Use of hydrogen etching to remove existing dislocations in GaN epitaxial layers

Yeh, Y. H., Chu, C. M., Wu, Y. H., Hsu, Y. C., Yu, T. Y. & Lee, W-I., 1 8月 2015, 於: Semiconductor Science and Technology. 30, 8, 085002.

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1 引文斯高帕斯（Scopus）

2014

High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrate

Shieh, C. Y., Tsai, M. T., Li, Z. Y., Kuo, H-C., Chang, J. Y., Chi, G. C. & Lee, W-I., 1 1月 2014, 於: Journal of Nanophotonics. 8, 1, 083081.

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1 引文斯高帕斯（Scopus）

The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes

Tsai, M. T., Chu, C. M., Huang, C. H., Wu, Y. H., Chiu, C. H., Li, Z. Y., Tu, P. M., Lee, W-I. & Kuo, H-C., 1 12月 2014, 於: Nanoscale Research Letters. 9, 1

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7 引文斯高帕斯（Scopus）

The growth of heteroepitaxial CuInSe₂ on free-standing N-polar GaN

Shih, C. H., Lo, I., You, S. T., Tsai, C. D., Tseng, B. H., Chen, Y. F., Chen, C. H., Lee, C. H., Lee, W-I. & Hsu, G. Z. L., 1 12月 2014, 於: AIP Advances. 4, 12, 127120.

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2 引文斯高帕斯（Scopus）

2013

A simple growth method to produce a-plane GaN thick films by hydride vapor phase epitaxy

Wu, Y. H., Lee, C. H., Chu, C. M., Yeh, Y. H., Chen, C. L. & Lee, W-I., 1 8月 2013, 於: Japanese Journal of Applied Physics. 52, 8 PART 2, 08JB08.

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4 引文斯高帕斯（Scopus）

2011

Homoepitaxy on GaN substrate with various treatments by metalorganic vapor phase epitaxy

Chen, K. M., Wu, Y. H., Yeh, Y. H., Chiang, C. H., Chen, K. Y. & Lee, W-I., 1 3月 2011, 於: Journal of Crystal Growth. 318, 1, p. 454-459 6 p.

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7 引文斯高帕斯（Scopus）

Hydrogen etching of GaN and its application to produce free-standing GaN thick films

Yeh, Y. H., Chen, K. M., Wu, Y. H., Hsu, Y. C., Yu, T. Y. & Lee, W-I., 15 11月 2011, 於: Journal of Crystal Growth. 333, 1, p. 16-19 4 p.

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36 引文斯高帕斯（Scopus）

Hydrogen etching on the surface of GaN for producing patterned structures

Yeh, Y. H., Chen, K. M., Wu, Y. H., Hsu, Y. C. & Lee, W-I., 1 1月 2011, 於: Journal of Crystal Growth. 314, 1, p. 9-12 4 p.

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21 引文斯高帕斯（Scopus）

2010

Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching

Chen, K. M., Yeh, Y. H., Wu, Y. H., Chiang, C. H., Yang, D. R., Chao, C. L., Chi, T. W., Fang, Y. H., Tsay, J. D. & Lee, W-I., 1 12月 2010, 於: Journal of Crystal Growth. 312, 24, p. 3574-3578 5 p.

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12 引文斯高帕斯（Scopus）

Stress and defect distribution of thick GaN film homoepitaxially regrown on free-standing GaN by hydride vapor phase epitaxy

Chen, K. M., Yeh, Y. H., Wu, Y. H., Chiang, C. H., Yang, D. R., Gao, Z. S., Chao, C. L., Chi, T. W., Fang, Y. H., Tsay, J. D. & Lee, W-I., 1 9月 2010, 於: Japanese Journal of Applied Physics. 49, 9 PART 1, 091001.

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6 引文斯高帕斯（Scopus）

2009

Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxy

Chen, K. M., Huang, H. H., Kuo, Y. L., Wu, P. L., Chu, T. L., Yu, H. W. & Lee, W. I., 1 5月 2009, 於: Journal of Crystal Growth. 311, 10, p. 3037-3039 3 p.

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8 引文斯高帕斯（Scopus）

Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure

Huang, H. H., Chao, C. L., Chi, T. W., Chang, Y. L., Liu, P. C., Tu, L. W., Tsay, J. D., Kuo, H-C., Cheng, S-J. & Lee, W-I., 1 5月 2009, 於: Journal of Crystal Growth. 311, 10, p. 3029-3032 4 p.

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16 引文斯高帕斯（Scopus）

2008

A novel technique for growing crack-free GaN thick film by hydride vapor phase epitaxy

Huang, H. H., Chen, K. M., Tu, L. W., Chu, T. L., Wu, P. L., Yu, H. W., Chiang, C. H. & Lee, W. I., 14 11月 2008, 於: Japanese Journal of Applied Physics. 47, 11, p. 8394-8396 3 p.

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6 引文斯高帕斯（Scopus）

Non-polar a-plane GaN grown on LaAlO₃ (0 0 1) substrate by pulsed laser deposition

Ho, Y. T., Liang, M. H., Hsiao, F. K., Wang, W. L., Peng, C. Y., Chen, W. D., Lee, W-I. & Chang, L., 1 4月 2008, 於: Journal of Crystal Growth. 310, 7-9, p. 1614-1618 5 p.

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12 引文斯高帕斯（Scopus）

Triangular extended microtunnels in gan prepared by selective crystallographic wet chemical etching

Huang, H. H., Wu, P. L., Zeng, H. Y., Liu, P. C., Chi, T. W., Tsay, J. D. & Lee, W-I., 2 6月 2008, 於: Journal of the Electrochemical Society. 155, 7

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5 引文斯高帕斯（Scopus）

2007

Deep-level emissions in GaAsN/GaAs structures grown by metal organic chemical vapor deposition

Chen, J-F., Ke, C. T., Hsieh, P. C., Chiang, C. H., Lee, W-I. & Lee, S. C., 2 8月 2007, 於: Journal of Applied Physics. 101, 12, 123515.

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide

Lee, C. L. & Lee, W-I., 10 5月 2007, 於: Applied Physics Letters. 90, 18, 181125.

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

Preparation of extended microtunnels in GaN by wet chemical etching

Huang, H. H., Zeng, H. Y. & Lee, W-I., 1 6月 2007, 於: Physica Status Solidi (B) Basic Research. 244, 6, p. 1872-1876 5 p.

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1 引文斯高帕斯（Scopus）

Using planarized p-GaN layer to reduce electrostatic discharged damage in nitride-based light-emitting diode

Lee, C. L. & Lee, W-I., 11 5月 2007, 於: Japanese Journal of Applied Physics, Part 2: Letters. 46, 17-19

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6 引文斯高帕斯（Scopus）

2006

Extended microtunnels in GaN prepared by wet chemical etch

Huang, H. H., Zeng, H. Y., Lee, C. L., Lee, S. C. & Lee, W-I., 23 11月 2006, 於: Applied Physics Letters. 89, 20, 202115.

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

Nonlithographic random masking and regrowth of GaN microhillocks to improve light-emitting diode efficiency

Lee, C. L., Lee, S. C. & Lee, W-I., 31 1月 2006, 於: Japanese Journal of Applied Physics, Part 2: Letters. 45, 1-3

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

2005

Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectance

Lee, J. R., Lu, C. R., Lee, W-I. & Lee, S. C., 1 1月 2005, 於: Physica E: Low-Dimensional Systems and Nanostructures. 25, 4, p. 562-568 7 p.

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12 引文斯高帕斯（Scopus）

Thickness dependence of current conduction and carrier distribution of GaAsN grown on GaAs

Chen, J-F., Hsiao, R. S., Hsieh, M. T., Huang, W. D., Guo, P. S., Lee, W-I., Lee, S. C. & Lee, C. L., 11 10月 2005, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 10, p. 7507-7511 5 p.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

2003

Electrooptical properties of GaNAs/GaAs multiple quantum well structures

Lee, J. R., Chen, Y. Y., Lu, C. R., Lee, W-I. & Lee, S. C., 25 7月 2003, 於: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 100, 3, p. 248-251 4 p.

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5 引文斯高帕斯（Scopus）

Liquid phase deposited SiO₂ on GaN

Wu, H. R., Lee, K. W., Nian, T. B., Chou, D. W., Huang Wu, J. J., Wang, Y. H., Houng, M. P., Sze, P. W., Su, Y. K., Chang, S. J., Ho, C. H., Chiang, C. I., Chern, Y. T., Juang, F. S., Wen, T. C., Lee, W-I. & Chyi, J. I., 29 4月 2003, 於: Materials Chemistry and Physics. 80, 1, p. 329-333 5 p.

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23 引文斯高帕斯（Scopus）

Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments

Lee, C. C., Lee, C. P., Yeh, M. H., Lee, W-I. & Kuo, C. T., 1 7月 2003, 於: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21, 4, p. 1501-1504 4 p.

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9 引文斯高帕斯（Scopus）

Thermal stability of plasma-treated ohmic contacts to n-GaN

Lee, C. C., Lin, S-D., Lee, C. P., Yeh, M. H., Lee, W-I. & Kuo, C. T., 4月 2003, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 4 B, p. 2313-2315 3 p.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

2002

Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching

Wen, T. C., Lee, W-I., Sheu, J. K. & Chi, G. C., 1 4月 2002, 於: Solid-State Electronics. 46, 4, p. 555-558 4 p.

研究成果: Article › 同行評審

27 引文斯高帕斯（Scopus）

2001

Activation of p-type GaN in a pure oxygen ambient

Wen, T. C., Lee, S. C., Lee, W-I., Chen, T. Y., Chan, S. H. & Tsang, J. S., 15 5月 2001, 於: Japanese Journal of Applied Physics, Part 2: Letters. 40, 5 B, p. L495-L497

研究成果: Article › 同行評審

27 引文斯高帕斯（Scopus）

Characterization of p-type In_xGa_1-xN grown by metalorganic chemical vapor deposition

Wen, T. C., Lee, W-I., Sheu, J. K. & Chi, G. C., 1 3月 2001, 於: Solid-State Electronics. 45, 3, p. 427-430 4 p.

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

Influence of barrier growth temperature on the properties of InGaN/GaN quantum well

Wen, T. C. & Lee, W-I., 9月 2001, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 40, 9 A, p. 5302-5303 2 p.

研究成果: Article › 同行評審

30 引文斯高帕斯（Scopus）

2000

Ga_0.5in_0.5P barrier layer for wet oxidation of AlAs

Lee, S. C. & Lee, W-I., 1 5月 2000, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 39, 5 A, p. 2583-2584 2 p.

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7 引文斯高帕斯（Scopus）

Phosphorus vacancy as a deep level in AlInP layers

Sung, W. J., Wu, Y. R., Lee, S. C., Wen, T. C., Li, T. J., Chang, J. T. & Lee, W-I., 15 6月 2000, 於: Japanese Journal of Applied Physics, Part 2: Letters. 39, 6 B, p. L567-L568

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2 引文斯高帕斯（Scopus）

1999

A dopant-related defect in Te-doped AIInP

Wu, Y. R., Sung, W. J., Wen, T. C., Lee, S. C. & Lee, W-I., 15 8月 1999, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38, 8 B, p. 4720-4721 2 p.

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4 引文斯高帕斯（Scopus）

Majority- and minority-carrier traps in Te-doped AlInP

Wu, Y. R., Sung, W. J. & Lee, W-I., 11 1月 1999, 於: Applied Physics Letters. 74, 2, p. 284-286 3 p.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Mg-related deep levels in AlInP

Wu, Y. R., Sung, W. J., Lee, S. C., Li, T. J. & Lee, W-I., 15 7月 1999, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38, 7 B, p. 4049-4050 2 p.

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3 引文斯高帕斯（Scopus）

1998

Formation of two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be doped GaAs with varying periods grown by low-temperature molecular beam epitaxy

Su, Z. A., Huang, J. H. & Lee, W-I., 15 5月 1998, 於: Journal of Crystal Growth. 187, 3-4, p. 559-563 5 p.

研究成果: Article › 同行評審

Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy

Su, Z. A., Huang, J. H., Hsieh, L. Z. & Lee, W-I., 1 12月 1998, 於: Applied Physics Letters. 72, 16, p. 1984-1986 3 p.

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4 引文斯高帕斯（Scopus）

1997

Using a neural network-based approach to predict the wafer yield in integrated circuit manufacturing

Tong, L-I., Lee, W-I. & Su, C. T., 1 10月 1997, 於: IEEE transactions on components, packaging and manufacturing technology. Part C. Manufacturing. 20, 4, p. 288-294 7 p.

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10 引文斯高帕斯（Scopus）

1996

Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

Chen, J-F., Chen, N. C., Huang, W. Y., Lee, W-I. & Feng, M. S., 1 7月 1996, 於: Japanese Journal of Applied Physics, Part 2: Letters. 35, 7 PART A, p. L810-L812 3 p.

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6 引文斯高帕斯（Scopus）

Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramic

Lee, W-I., Young, R. L. & Chen, W-K., 9月 1996, 於: Japanese Journal of Applied Physics, Part 2: Letters. 35, 9 B, p. L1158-L1160 3 p.

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

李 威儀

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李威儀