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查看斯高帕斯 (Scopus) 概要
李 威儀
約聘研究員
國立陽明交通大學
電話
03-5712121#31773
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wilee
nycu.edu
tw
網站
https://ep.nycu.edu.tw/faculty_info/%E6%9D%8E%E5%A8%81%E5%84%80/
h-index
h10-index
h5-index
825
引文
15
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
111
引文
6
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2
引文
1
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1994 …
2022
每年研究成果
概覽
指紋
網路
計畫
(17)
研究成果
(84)
獎項
(2)
類似的個人檔案
(6)
指紋
查看啟用 Wei-I Lee 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
A-plane GaN
35%
Activation Energy
32%
AlGaAs
15%
AlInP
22%
Alkyl
15%
AlN Buffer Layer
24%
AlN nucleation Layer
15%
Arsenic Precipitation
15%
Bowing
15%
Chemical Etching
35%
Deep Level Transient Spectroscopy
30%
Dislocation
39%
Epitaxial Lateral Overgrowth
19%
Free-standing GaN
36%
Freestanding GaN Substrate
33%
Full Width at Half Maximum
18%
GaAsN
15%
Gallium Arsenide
52%
GaN Films
36%
GaN Layers
43%
GaNAs
15%
Growth Temperature
27%
High Temperature
18%
Hydride Vapor Phase Epitaxy
69%
Hydrogen Etching
22%
Indium Gallium Nitride (InGaN)
28%
InGaN Quantum Wells
15%
Light-emitting Diodes
22%
Low Pressure
31%
Low Temperature
30%
Metal Organic Vapor Phase Epitaxy (MOVPE)
46%
Metal-organic Chemical Vapor Deposition (MOCVD)
83%
Microtunnel
30%
Molecular Beam Epitaxy
30%
Multiple Quantum Well Structure
20%
N-GaN
15%
P-GaN
24%
Photoluminescence
21%
Photoreflectance
15%
Quantum Well
15%
Regrowth
19%
Sapphire Substrate
32%
Selective Epitaxial Growth
15%
Superlattice Structure
15%
Thick Film
43%
Trimethylgallium
28%
Two Dimensional
16%
Ultraviolet Light-emitting Diode (UV-LED)
22%
Undoped
16%
V(III)
24%
Material Science
Activation Energy
45%
Aluminum Nitride
30%
Annealing
12%
Arsenic
15%
Atomic Force Microscopy
10%
Buffer Layer
15%
Capacitance
17%
Carrier Concentration
12%
Chemical Vapor Deposition
34%
Contact Resistance
20%
Deep-Level Transient Spectroscopy
32%
Density
35%
Doping (Additives)
22%
Electrical Property
8%
Electrical Resistivity
9%
Electron Mobility
12%
Epilayers
8%
Epitaxial Film
12%
Epitaxy
22%
Film
71%
Gallium Arsenide
52%
Gallium Nitride
15%
Hydride
68%
Indium Tin Oxide
7%
Light-Emitting Diode
37%
Materials Property
9%
Metal-Organic Chemical Vapor Deposition
42%
Molecular Beam Epitaxy
28%
Nanorod
7%
Nitride Compound
15%
Nucleation
15%
Photoluminescence
31%
Potassium
11%
Quantum Well
7%
Sapphire
59%
Scanning Electron Microscopy
17%
Silicon
9%
Silicon Dioxide
7%
Superlattice
15%
Surface (Surface Science)
36%
Surface Roughness
7%
Thick Films
52%
Thin Films
9%
Transistor
9%
Transmission Electron Microscopy
8%
Vapor Phase Epitaxy
100%
Varistors
11%
Wet Etching
37%
X-Ray Diffraction
10%
ZnO
15%
Engineering
Activation Energy
17%
Aluminium Gallium Arsenide
16%
Ar Plasma
9%
Arsenic
15%
C Sample
7%
Carrier Concentration
8%
Chemical Vapor Deposition
17%
Current-Voltage Characteristic
8%
Deep Level
48%
Depth Profile
9%
Device Performance
7%
Dislocation Density
17%
Doped Gaas
15%
Efficiency Droop
8%
Epitaxial Film
17%
Flat Surface
18%
Gaas Substrate
15%
Gallium Arsenide
43%
Growth Temperature
28%
High Resolution
15%
Inductively Coupled Plasma
8%
Light-Emitting Diode
45%
Liquid Phase
7%
Low-Temperature
49%
Main Part
7%
Metal Organic Chemical Vapor Deposition
35%
Nitride
15%
Ohmic Contacts
16%
Patterning Technique
7%
Phase Composition
9%
Photoreflectance
9%
Policymakers
7%
Polycrystalline
11%
Porosity
15%
Quantum Dot
7%
Quantum Well
37%
Ray Diffraction
12%
Ray Measurement
7%
Reflectance
9%
Reliability Study
7%
Room Temperature
13%
Sapphire Substrate
34%
Superlattice Structure
15%
Thermal Stress
7%
Threading Dislocation
13%
Torr
11%
Transients
15%
Two Dimensional
18%
Ultraviolet Light
21%
Vapor Deposition
17%
