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國立陽明交通大學研發優勢分析平台 首頁
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查看斯高帕斯 (Scopus) 概要
李 威儀
約聘研究員
國立陽明交通大學
h-index
h10-index
h5-index
851
引文
15
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
87
引文
6
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
6
引文
1
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1994 …
2022
每年研究成果
概覽
指紋
網路
計畫
(17)
研究成果
(92)
獎項
(2)
類似的個人檔案
(6)
指紋
查看啟用 Wei-I Lee 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
83%
Hydride Vapor Phase Epitaxy
69%
Gallium Arsenide
52%
Metal Organic Vapor Phase Epitaxy (MOVPE)
46%
GaN Layers
43%
Thick Film
43%
Dislocation
39%
GaN Films
36%
Free-standing GaN
36%
A-plane GaN
35%
Chemical Etching
35%
Freestanding GaN Substrate
33%
Sapphire Substrate
32%
Activation Energy
32%
Low Pressure
31%
Low Temperature
30%
Deep Level Transient Spectroscopy
30%
Molecular Beam Epitaxy
30%
Microtunnel
30%
Trimethylgallium
28%
Indium Gallium Nitride (InGaN)
28%
Growth Temperature
27%
P-GaN
24%
V(III)
24%
AlN Buffer Layer
24%
Hydrogen Etching
22%
Ultraviolet Light-emitting Diode (UV-LED)
22%
Light-emitting Diodes
22%
AlInP
22%
Photoluminescence
21%
Multiple Quantum Well Structure
20%
Regrowth
19%
Epitaxial Lateral Overgrowth
19%
High Temperature
18%
Full Width at Half Maximum
18%
Two Dimensional
16%
Undoped
16%
Quantum Well
15%
Alkyl
15%
Arsenic Precipitation
15%
Bowing
15%
GaAsN
15%
Superlattice Structure
15%
AlGaAs
15%
GaNAs
15%
N-GaN
15%
Photoreflectance
15%
InGaN Quantum Wells
15%
AlN nucleation Layer
15%
Selective Epitaxial Growth
15%
Material Science
Vapor Phase Epitaxy
100%
Film
71%
Hydride
68%
Sapphire
59%
Gallium Arsenide
52%
Thick Films
52%
Activation Energy
45%
Metal-Organic Chemical Vapor Deposition
42%
Light-Emitting Diode
37%
Wet Etching
37%
Surface (Surface Science)
36%
Density
35%
Chemical Vapor Deposition
34%
Deep-Level Transient Spectroscopy
32%
Photoluminescence
31%
Aluminum Nitride
30%
Molecular Beam Epitaxy
28%
Doping (Additives)
22%
Epitaxy
22%
Contact Resistance
20%
Scanning Electron Microscopy
17%
Capacitance
17%
Buffer Layer
15%
Nucleation
15%
Nitride Compound
15%
Superlattice
15%
Arsenic
15%
Gallium Nitride
15%
ZnO
15%
Electron Mobility
12%
Epitaxial Film
12%
Carrier Concentration
12%
Annealing
12%
Potassium
11%
Varistors
11%
Atomic Force Microscopy
10%
X-Ray Diffraction
10%
Thin Films
9%
Silicon
9%
Transistor
9%
Electrical Resistivity
9%
Materials Property
9%
Electrical Property
8%
Epilayers
8%
Transmission Electron Microscopy
8%
Quantum Well
7%
Silicon Dioxide
7%
Surface Roughness
7%
Nanorod
7%
Indium Tin Oxide
7%
Engineering
Low-Temperature
49%
Deep Level
48%
Light-Emitting Diode
45%
Gallium Arsenide
43%
Quantum Well
37%
Metal Organic Chemical Vapor Deposition
35%
Sapphire Substrate
34%
Growth Temperature
28%
Ultraviolet Light
21%
Two Dimensional
18%
Flat Surface
18%
Activation Energy
17%
Dislocation Density
17%
Epitaxial Film
17%
Chemical Vapor Deposition
17%
Vapor Deposition
17%
Ohmic Contacts
16%
Aluminium Gallium Arsenide
16%
High Resolution
15%
Transients
15%
Gaas Substrate
15%
Nitride
15%
Doped Gaas
15%
Superlattice Structure
15%
Arsenic
15%
Porosity
15%
Threading Dislocation
13%
Room Temperature
13%
Ray Diffraction
12%
Polycrystalline
11%
Torr
11%
Ar Plasma
9%
Phase Composition
9%
Photoreflectance
9%
Depth Profile
9%
Reflectance
9%
Carrier Concentration
8%
Inductively Coupled Plasma
8%
Efficiency Droop
8%
Current-Voltage Characteristic
8%
Liquid Phase
7%
Policymakers
7%
Device Performance
7%
C Sample
7%
Quantum Dot
7%
Patterning Technique
7%
Main Part
7%
Thermal Stress
7%
Ray Measurement
7%
Reliability Study
7%
