Tuo-Hung Hou

2022

2D Materials-Based Static Random-Access Memory

Liu, C. J., Wan, Y., Li, L. J., Lin, C. P., Hou, T. H., Huang, Z. Y. & Hu, V. P. H., 2022, (Accepted/In press) 於: Advanced Materials.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Bi₂O₂Se-Based True Random Number Generator for Security Applications

Liu, B., Chang, Y. F., Li, J., Liu, X., Wang, L. A., Verma, D., Liang, H., Zhu, H., Zhao, Y., Li, L. J., Hou, T. H. & Lai, C. S., 26 4月 2022, 於: ACS Nano. 16, 4, p. 6847-6857 11 p.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

Defect-engineered room temperature negative differential resistance in monolayer MoS₂ transistors

Chang, W. H., Lu, C. I., Yang, T. H., Yang, S. T., Simbulan, K. B., Lin, C. P., Hsieh, S. H., Chen, J. H., Li, K. S., Chen, C. H., Hou, T. H., Lu, T. H. & Lan, Y. W., 18 10月 2022, 於: Nanoscale Horizons. 109

研究成果: Article › 同行評審

Device quantization policy in variation-aware in-memory computing design

Chang, C. C., Li, S. T., Pan, T. L., Tsai, C. M., Wang, I. T., Chang, T. S. & Hou, T. H., 12月 2022, 於: Scientific reports. 12, 1, 112.

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1 引文斯高帕斯（Scopus）

Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture

Hsiang, K. Y., Liao, C. Y., Liu, J. H., Lin, C. Y., Lee, J. Y., Lou, Z. F., Chang, F. S., Ray, W. C., Li, Z. X., Tseng, H. C., Wang, C. C., Liao, M. H., Hou, T. H. & Lee, M. H., 2022, (Accepted/In press) 於: Ieee Electron Device Letters. p. 1 1 p.

研究成果: Article › 同行評審

Giant Photoresponsivity and External Quantum Efficiency in a Contact-Engineered Broadband a-IGZO Phototransistor

Lai, Y. H., Wang, I. T. & Hou, T. H., 2022, (Accepted/In press) 於: Advanced Functional Materials.

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5 引文斯高帕斯（Scopus）

Hardware-Robust In-RRAM-Computing for Object Detection

Chiang, Y. H., Ni, C. E., Sung, Y., Hou, T. H., Chang, T. S. & Jou, S. J., 2022, (Accepted/In press) 於: IEEE Journal on Emerging and Selected Topics in Circuits and Systems.

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1 引文斯高帕斯（Scopus）

Performance Enhancement and Transient Current Response of Ferroelectric Tunnel Junction: A Theoretical Study

Huang, H. H., Chu, Y. H., Wu, T. Y., Wu, M. H., Wang, I. T. & Hou, T. H., 2022, (Accepted/In press) 於: IEEE Transactions on Electron Devices. p. 1-7 7 p.

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1 引文斯高帕斯（Scopus）

Stochastic Switching in a Magnetic-Tunnel-Junction Neuron and a Bias-Dependent Néel-Arrhenius Model

Wu, M. H., Wang, I. T., Hong, M. C., Chen, K. M., Tseng, Y-C., Wei, J. H. & Hou, T. H., 12月 2022, 於: Physical Review Applied. 18, 6, 064034.

研究成果: Article › 同行評審

Suppressing the filament formation by aluminum doping in anatase titanium oxide

Chung, C. H., Lin, C-Y., Yang, T. F., Huang, H. H., Hou, T. H. & Magyari-Köpe, B., 1 12月 2022, 於: AIP Advances. 12, 12, 125212.

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Voltage–Time Transformation Model for Threshold Switching Spiking Neuron Based on Nucleation Theory

Yap, S. M., Wang, I. T., Wu, M. H. & Hou, T. H., 13 4月 2022, 於: Frontiers in Neuroscience. 16, 868671.

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2021

Bi₂O₂Se-Based Memristor-Aided Logic

Liu, B., Zhao, Y., Verma, D., Wang, L. A., Liang, H., Zhu, H., Li, L. J., Hou, T. H. & Lai, C. S., 4月 2021, 於: ACS Applied Materials and Interfaces. 13, 13, p. 15391–15398 8 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Bilayer-based antiferroelectric HfZrO₂tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory

Hsiang, K. Y., Liao, C. Y., Liu, J. H., Wang, J. F., Chiang, S. H., Chang, S. H., Hsieh, F. C., Liang, H., Lin, C. Y., Lou, Z. F., Hou, T. H., Liu, C. W. & Lee, M. H., 10月 2021, 於: Ieee Electron Device Letters. 42, 10, p. 1464-1467 4 p.

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

Strategy of Mitigating Breakdown Interference and Yield Loss in Crossbar Memory

Chang, C. C., Wang, I. T., Huang, H. H., Hudec, B., Wu, M. H., Chang, C. C., Liu, P. T. & Hou, T. H., 1 12月 2021, 於: IEEE Transactions on Electron Devices. 68, 12, p. 6082-6086 5 p.

研究成果: Article › 同行評審

Two-dimensional solid-phase crystallization toward centimeter-scale monocrystalline layered MoTe₂: Via two-step annealing

Lin, C. P., Hsu, H. H., Huang, J. H., Kang, Y. W., Wu, C. T., Lee, Y. J., Cheng, C. C., Lan, Y. W., Chang, W. H., Li, L. J. & Hou, T. H., 21 11月 2021, 於: Journal of Materials Chemistry C. 9, 43, p. 15566-15576 11 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Unipolar parity of ferroelectric-antiferroelectric characterized by junction current in crystalline phase Hf_1−xZr_xO₂ diodes

Hsiang, K. Y., Liao, C. Y., Wang, J. F., Lou, Z. F., Lin, C. Y., Chiang, S. H., Liu, C. W., Hou, T. H. & Lee, M. H., 10月 2021, 於: Nanomaterials. 11, 10, 2685.

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2 引文斯高帕斯（Scopus）

2020

Dimensionally anisotropic graphene with high mobility and a high on-off ratio in a three-terminal RRAM device

Liu, B., Tai, H. H., Liang, H., Zheng, E. Y., Sahoo, M., Hsu, C. H., Chen, T. C., Huang, C. A., Wang, J. C., Hou, T. H. & Lai, C. S., 6月 2020, 於: Materials Chemistry Frontiers. 4, 6, p. 1756-1763 8 p.

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5 引文斯高帕斯（Scopus）

Drain-Bias Transient Instability of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

Lai, Y. H., Lin, R. P. & Hou, T. H., 10月 2020, 於: IEEE Transactions on Electron Devices. 67, 10, p. 4526-4529 4 p., 9165213.

研究成果: Article › 同行評審

Exploiting analogue OxRAM conductance modulation for contrast enhancement application

Kumar, A., Bezugam, S. S., Hudec, B., Hou, T. H. & Suri, M., 11 6月 2020, 於: Electronics Letters. 56, 12, p. 594-597 4 p.

研究成果: Article › 同行評審

Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training

Hsiang, K. Y., Liao, C. Y., Chen, K. T., Lin, Y. Y., Chueh, C. Y., Chang, C., Tseng, Y. J., Yang, Y. J., Chang, S. T., Liao, M. H., Hou, T. H., Wu, C. H., Ho, C. C., Chiu, J. P., Chang, C. S. & Lee, M. H., 10月 2020, 於: IEEE Transactions on Electron Devices. 67, 10, p. 4201-4207 7 p., 9180313.

研究成果: Article › 同行評審

21 引文斯高帕斯（Scopus）

Nonvolatile molecular memory with the multilevel states based on MoS2 nanochannel field effect transistor through tuning gate voltage to control molecular configurations

Lan, Y-W., Hong, C-J., Chen, P-C., Lin, Y-Y., Yang, C-H., Chu, C-J., Li, M-Y., Li, L-J., Su, C-J., Wu, B-W., Hou, T-H., Li, K-S. & Zhong, Y-L., 27 4月 2020, 於: Nanotechnology. 31, 27, 9 p., 275204.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Promising Engineering Approaches for Improving the Reliability of HfZrO_x2-D and 3-D Ferroelectric Random Access Memories

Lin, Y. D., Yeh, P. C., Tzeng, P. J., Hou, T. H., Wu, C. I., King, Y. C. & Lin, C. J., 12月 2020, 於: IEEE Transactions on Electron Devices. 67, 12, p. 5479-5483 5 p., 9233949.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Pulse-Mediated Electronic Tuning of the MoS₂-Perovskite Ferroelectric Field Effect Transistors

Chen, K. W., Chang, S. J., Tang, E. Y. T., Lin, C. P., Hou, T. H., Chen, C. H. & Tseng, Y. C., 11月 2020, 於: ACS Applied Electronic Materials. 2, 12, p. 3843–3852 10 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Semi-Empirical RC Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices

Majumdar, S., Chen, Y., Hudec, B., Hou, T. H. & Suri, M., 3月 2020, 於: IEEE Transactions on Electron Devices. 67, 3, p. 1348-1352 5 p., 8972592.

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1 引文斯高帕斯（Scopus）

Size-Dependent Switching Properties of Spin-Orbit Torque MRAM with Manufacturing-Friendly 8-Inch Wafer-Level Uniformity

Rahaman, S. Z., Su, Y. H., Chen, G. L., Chen, F. M., Wei, J. H., Hou, T. H., Sheu, S. S., Wu, C. I., Deng, D. L., Wang, I. J., Wang, D. Y., Pai, C. F., Hsin, Y. C., Yang, S. Y., Lee, H. H., Chang, Y. J. & Kuo, Y. C., 1 1月 2020, 於: IEEE Journal of the Electron Devices Society. 8, p. 163-169 7 p., 8984374.

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8 引文斯高帕斯（Scopus）

SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices

Kingra, S. K., Parmar, V., Chang, C. C., Hudec, B., Hou, T. H. & Suri, M., 13 2月 2020, 於: Scientific reports. 10, 2567.

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14 引文斯高帕斯（Scopus）

Strong Read and Write Interference Induced by Breakdown Failure in Crossbar Arrays

Chang, C. C., Huang, H. H., Hudec, B., Wu, M. H., Chang, C. C., Liu, P. T. & Hou, T-H., 2 11月 2020, 於: IEEE Transactions on Electron Devices. 67, 12, p. 5497-5504 8 p., 9246681.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

2019

A Fluorographene-Based Synaptic Transistor

Liu, B., Hong, M. C., Sahoo, M., Ong, B. L., Tok, E. S., Di, M. F., Ho, Y. P., Liang, H., Bow, J. S., Liu, Z., Wang, J. C., Hou, T-H. & Lai, C. S., 1 1月 2019, (Accepted/In press) 於: Advanced Materials Technologies. 1900422.

研究成果: Article › 同行評審

17 引文斯高帕斯（Scopus）

Effective N-methyl-2-pyrrolidone wet cleaning for fabricating high-performance monolayer MoS₂ transistors

Chen, P. C., Lin, C. P., Hong, C. J., Yang, C. H., Lin, Y. Y., Li, M. Y., Li, L. J., Yu, T. Y., Su, C. J., Li, K-S., Zhong, Y. L., Hou, T-H. & Lan, Y. W., 1 2月 2019, 於: Nano Research. 12, 2, p. 303-308 6 p.

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

Local Modulation of Electrical Transport in 2D Layered Materials Induced by Electron Beam Irradiation

Lin, C. P., Chen, P. C., Huang, J. H., Lin, C. T., Wang, D., Lin, W. T., Cheng, C. C., Su, C-J., Lan, Y. W. & Hou, T-H., 28 5月 2019, 於: ACS Applied Electronic Materials. 1, 5, p. 684-691 8 p.

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

Polymorphism Control of Layered MoTe₂ through Two-Dimensional Solid-Phase Crystallization

Huang, J. H., Hsu, H. H., Wang, D., Lin, W. T., Cheng, C. C., Lee, Y. J. & Hou, T-H., 19 6月 2019, 於: Scientific reports. 9, 1, 8810.

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17 引文斯高帕斯（Scopus）

2018

High-performance double-gate α-InGaZnO ISFET pH sensor using a HfO₂ gate dielectric

Lu, C. H., Hou, T-H. & Pan, T. M., 1 1月 2018, 於: IEEE Transactions on Electron Devices. 65, 1, p. 237-242 6 p.

研究成果: Article › 同行評審

32 引文斯高帕斯（Scopus）

Mitigating Asymmetric Nonlinear Weight Update Effects in Hardware Neural Network Based on Analog Resistive Synapse

Chang, C. C., Chen, P. C., Chou, T., Wang, I. T., Hudec, B., Chang, C. C., Tsai, C-M., Chang, T-S. & Hou, T-H., 1 3月 2018, 於: IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 8, 1, p. 116-124 9 p.

研究成果: Article › 同行評審

64 引文斯高帕斯（Scopus）

Optimizing Incremental Step Pulse Programming for RRAM Through Device-Circuit Co-Design

Liu, J. C., Wu, T. Y. & Hou, T-H., 1 5月 2018, 於: IEEE Transactions on Circuits and Systems I: Regular Papers. 65, 5, p. 617-621 5 p.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Programmable Synaptic Metaplasticity and below Femtojoule Spiking Energy Realized in Graphene-Based Neuromorphic Memristor

Liu, B., Liu, Z., Chiu, I. S., Di, M., Wu, Y., Wang, J. C., Hou, T-H. & Lai, C. S., 20 6月 2018, 於: ACS Applied Materials and Interfaces. 10, 24, p. 20237-20243 7 p.

研究成果: Article › 同行評審

47 引文斯高帕斯（Scopus）

2017

AC stress and electronic effects on SET switching of HfO₂ RRAM

Liu, J. C., Magyari-Köpe, B., Qin, S., Zheng, X., Philip Wong, H. S. & Hou, T-H., 28 8月 2017, 於: Applied Physics Letters. 111, 9, 5 p., 093502.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Internal current amplification induced by dielectric hole trapping in monolayer MoS₂ transistor

Liu, P. S., Lin, C. T., Hudec, B. & Hou, T-H., 31 10月 2017, 於: Nanotechnology. 28, 47, 8 p., 475204.

研究成果: Article › 同行評審

Large-Area 2D Layered MoTe₂ by Physical Vapor Deposition and Solid-Phase Crystallization in a Tellurium-Free Atmosphere

Huang, J. H., Deng, K. Y., Liu, P. S., Wu, C. T., Chou, C. T., Chang, W-H., Lee, Y. J. & Hou, T-H., 8 9月 2017, 於: Advanced Materials Interfaces. 4, 17, 1700157.

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49 引文斯高帕斯（Scopus）

Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication

Chen, H. Y., Brivio, S., Chang, C. C., Frascaroli, J., Hou, T-H., Hudec, B., Liu, M., Lv, H., Molas, G., Sohn, J., Spiga, S., Teja, V. M., Vianello, E. & Wong, H. S. P., 1 12月 2017, 於: Journal of Electroceramics. 39, 1-4, p. 21-38 18 p.

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63 引文斯高帕斯（Scopus）

2016

1-V full-swing depletion-load a-In-Ga-Zn-O inverters for back-end-of-line compatible 3D integration

Chi, L. J., Yu, M. J., Chang, Y. H. & Hou, T-H., 1 4月 2016, 於: IEEE Electron Device Letters. 37, 4, p. 441-444 4 p., 7420606.

研究成果: Article › 同行評審

20 引文斯高帕斯（Scopus）

32-nm multigate Si-nTFET with microwave-annealed abrupt junction

Hou, F. J., Sung, P. J., Hsueh, F. K., Wu, C. T., Lee, Y. J., Chang, M. N., Li, Y-M. & Hou, T-H., 1 5月 2016, 於: IEEE Transactions on Electron Devices. 63, 5, p. 1808-1813 6 p., 7225121.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

3D Ta/TaO _x /TiO ₂ /Ti synaptic array and linearity tuning of weight update for hardware neural network applications

Wang, I. T., Chang, C. C., Chiu, L. W., Chou, T. & Hou, T-H., 1 8月 2016, 於: Nanotechnology. 27, 36, 8 p., 365204.

研究成果: Article › 同行評審

114 引文斯高帕斯（Scopus）

Abnormal positive bias stress instability of In-Ga-Zn-O thin-film transistors with low-temperature Al₂O₃ gate dielectric

Chang, Y. H., Yu, M. J., Lin, R. P., Hsu, C. P. & Hou, T-H., 18 1月 2016, 於: Applied Physics Letters. 108, 3, 4 p., 033502.

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49 引文斯高帕斯（Scopus）

High-Voltage Amorphous InGaZnO TFT with Al₂O₃ High-k Dielectric for Low-Temperature Monolithic 3-D Integration

Yu, M. J., Lin, R. P., Chang, Y. H. & Hou, T-H., 1 10月 2016, 於: IEEE Transactions on Electron Devices. 63, 10, p. 3944-3949 6 p., 7547290.

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31 引文斯高帕斯（Scopus）

Interface engineered HfO₂-based 3D vertical ReRAM

Hudec, B., Wang, I. T., Lai, W. L., Chang, C. C., Jančovič, P., Fröhlich, K., Mičušík, M., Omastová, M. & Hou, T-H., 29 4月 2016, 於: Journal of Physics D: Applied Physics. 49, 21, 9 p., 215102.

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23 引文斯高帕斯（Scopus）

Large-area few-layer MoS₂ deposited by sputtering

Huang, J. H., Chen, H. H., Liu, P. S., Lu, L. S., Wu, C. T., Chou, C. T., Lee, Y. J., Li, L. J., Chang, W-H. & Hou, T-H., 1 6月 2016, 於: Materials Research Express. 3, 6, 065007.

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37 引文斯高帕斯（Scopus）

Low-Voltage InGaZnO Ion-Sensitive Thin-Film Transistors Fabricated by Low-Temperature Process

Lu, C. H., Hou, T-H. & Pan, T. M., 1 12月 2016, 於: IEEE Transactions on Electron Devices. 63, 12, p. 5060-5063 4 p., 7589998.

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15 引文斯高帕斯（Scopus）

Suspended Diamond-Shaped Nanowire with Four {111} Facets for High-Performance Ge Gate-All-Around FETs

Hou, F. J., Sung, P. J., Hsueh, F. K., Wu, C. T., Lee, Y. J., Li, Y-M., Samukawa, S. & Hou, T-H., 1 10月 2016, 於: IEEE Transactions on Electron Devices. 63, 10, p. 3837-3843 7 p., 7542120.

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5 引文斯高帕斯（Scopus）

2015

Categorization of Multilevel-Cell Storage-Class Memory: An RRAM Example

Liu, J. C., Hsu, C. W., Wang, I. T. & Hou, T-H., 1 8月 2015, 於: IEEE Transactions on Electron Devices. 62, 8, p. 2510-2516 7 p., 7140778.

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12 引文斯高帕斯（Scopus）

Characterization and modeling of nonfilamentary Ta/TaO_x/TiO₂/Ti analog synaptic device

Wang, Y. F., Lin, Y. C., Wang, I. T., Lin, T. P. & Hou, T-H., 8 5月 2015, 於: Scientific reports. 5, p. 1-9 9 p., 10150.

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138 引文斯高帕斯（Scopus）

侯 拓宏

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侯拓宏