Tuo-Hung Hou

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每年研究成果

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103 Article
72 Conference contribution
9 Patent
7 Paper
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7結果

篩選

2004
Effects of base oxide in HfSiO/SiO₂ high-k gate stacks
Wu, W. H., Chen, M. C., Wang, M. F., Hou, T-H., Yao, L. G., Jin, Y., Chen, S. C. & Liang, M. S., 1 12月 2004, p. 25-28. 4 p.
研究成果: Paper › 同行評審
2 引文斯高帕斯（Scopus）
2003
Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures
Young, C. D., Kerber, A., Hou, T-H., Cartier, E., Brown, G. A., Bersuker, G., Kim, Y., Lim, C., Gutt, J., Lysaght, P., Bennett, J., Lee, C. H., Gopalan, S., Gardner, M., Zeitzoff, P., Groeseneken, G., Murto, R. W. & Huff, H. R., 10月 2003, p. 347-359. 13 p.
研究成果: Paper › 同行評審
7 引文斯高帕斯（Scopus）
Effect of deposition sequence and plasma treatment on ALCVD™ HfO ₂ N-MOSFET properties
Lim, C., Kim, Y., Hou, T-H., Gutt, J., Marcus, S., Pomarede, C., Shero, E., De Waard, H., Werkhoven, C., Lee, C., Tamim, J., Chaudhary, N., Bersuker, G., Barnett, J., Young, C., Zeitzoff, P., Brown, G. A., Gardner, M., Murto, R. W. & Huff, H. R., 1 12月 2003, p. 83-91. 9 p.
研究成果: Paper › 同行評審
Non-contact electrical characterization of high-dielectric-constant (high-k) materials
Hung, P. Y., Foran, B., Hou, T-H., Diebold, A., Zhang, X. & Oroshiba, C., 2 10月 2003, p. 219-225. 7 p.
研究成果: Paper › 同行評審
Sub-nanometer high-k gate stack scaling using the HF-last/NH₃ anneal interface
Peterson, J. J., Barnett, J., Young, C. D., Hou, T-H., Gutt, J., Gopalan, S., Lee, C. H., Li, H. J., Moumen, N., Chaudhary, N., Lee, B. H., Bersuker, G., Zeitzoff, P. M., Brown, G. A., Lysaght, P., Gardner, M., Murto, R. W. & Huff, H. R., 10月 2003, p. 93-99. 7 p.
研究成果: Paper › 同行評審
2002
Improved scalability of high-k gate dielectrics by using hf-aluminates
Hou, T-H., Gutt, J., Lim, C., Marcus, S., Pomarede, C., Shero, E., De Warrd, H., Werkhoven, C., Gardner, M., Murto, R. W. & Huff, H. R., 10月 2002, p. 141-148. 8 p.
研究成果: Paper › 同行評審
2001
Spike anneal qualification for 0.13 μm USJ technology on Radiance™ Centura®
Sun, H. L., Jao, H. M., Huang, H. T., Pan, J. Y., Hou, T-H., Chen, S., Ramamurthy, S., Chiao, E., Wilusz, D. & Chen, A., 9月 2001, p. 246-249. 4 p.
研究成果: Paper › 同行評審
1 引文斯高帕斯（Scopus）

侯 拓宏

研究成果

搜尋結果

Effects of base oxide in HfSiO/SiO2 high-k gate stacks

Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

Effect of deposition sequence and plasma treatment on ALCVD™ HfO 2 N-MOSFET properties

Non-contact electrical characterization of high-dielectric-constant (high-k) materials

Sub-nanometer high-k gate stack scaling using the HF-last/NH3 anneal interface

Improved scalability of high-k gate dielectrics by using hf-aluminates

Spike anneal qualification for 0.13 μm USJ technology on Radiance™ Centura®

侯拓宏

Effects of base oxide in HfSiO/SiO₂ high-k gate stacks

Effect of deposition sequence and plasma treatment on ALCVD™ HfO ₂ N-MOSFET properties

Sub-nanometer high-k gate stack scaling using the HF-last/NH₃ anneal interface