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查看斯高帕斯 (Scopus) 概要
侯 拓宏
教授
電機工程學系
https://orcid.org/0000-0002-9686-7076
電話
03-5754261
電子郵件
thhou
nycu.edu
tw
網站
http://web.it.nctu.edu.tw/~thhou/people.html
h-index
h10-index
h5-index
4265
引文
35
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2281
引文
25
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
739
引文
12
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1999
2023
每年研究成果
概覽
指紋
網路
計畫
(33)
研究成果
(189)
獎項
(1)
活動
(1)
類似的個人檔案
(6)
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指紋
查看啟用 Tuo-Hung Hou 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering & Materials Science
Data storage equipment
100%
RRAM
77%
Gate dielectrics
63%
Nanocrystals
62%
Ferroelectric materials
55%
Oxides
45%
Metals
43%
Polysilicon
36%
Electric potential
35%
Thin film transistors
32%
Transistors
32%
Field effect transistors
31%
Durability
30%
Nitrides
27%
High-k dielectric
26%
Leakage currents
24%
Annealing
22%
Electrodes
21%
Chemical vapor deposition
20%
Transition metals
20%
Nanowires
19%
Tunnel junctions
19%
Fabrication
19%
Temperature
17%
Threshold voltage
17%
Deep neural networks
16%
Plasmas
16%
Doping (additives)
16%
Computer hardware
15%
Monolayers
15%
Nitridation
15%
Carrier mobility
14%
Modulation
13%
Sputtering
13%
Gallium
13%
Tunnels
13%
Hafnium
13%
Aluminum oxide
13%
Oxygen vacancies
12%
Zinc oxide
12%
Capacitors
12%
Indium
12%
Memristors
12%
Electrostatics
12%
Neurons
11%
Neural networks
11%
Silicon
11%
Flash memory
11%
Charge trapping
11%
Resistors
11%
Chemical Compounds
Dielectric Material
50%
Voltage
36%
Field Effect
28%
Nanocrystal
27%
Compound Mobility
24%
Leakage Current
21%
Annealing
20%
Tunneling
19%
Metal
19%
Plastic Property
18%
Oxide
17%
Application
17%
Nitride
15%
Capacitor
15%
Amorphous Material
14%
Polarization
14%
Resistance
12%
Behavior as Electrode
12%
Energy
11%
Simulation
11%
Block Like Crystal
11%
Transition Element
10%
Energy Consumption
10%
Weight
9%
Ambient Reaction Temperature
9%
Nanowire
9%
Monolayer
9%
Sputtering
9%
Time
9%
Liquid Film
8%
Polarity
8%
Tunneling Current
8%
Electric Field
8%
Filament
8%
Electrical Property
8%
Transconductance
8%
Retention Time
7%
Reduction
7%
Semiconductor
6%
Dioxygen
6%
Grain Size
6%
Magnetic Torque
6%
Antiferroelectric Material
6%
Fermi Level
6%
Surface
6%
Models (Physical)
6%
Error
5%
Etching
5%
Plasma
5%
Compliance
5%
Physics & Astronomy
endurance
17%
transistors
16%
metals
15%
random access memory
14%
field effect transistors
13%
carbon nanotube based memory
13%
nanocrystals
13%
filaments
12%
selectors
12%
CMOS
11%
electrodes
11%
performance
10%
learning
10%
electric potential
10%
cells
10%
synapses
8%
oxides
8%
phototransistors
8%
nitrides
8%
cycles
8%
vapor deposition
8%
analogs
8%
hardware
7%
scaling
7%
resistors
7%
integrated circuits
7%
characterization
7%
tunnel junctions
6%
fabrication
6%
leakage
6%
silicon
6%
molecular orbitals
6%
TOPS (spacecraft)
6%
plastic properties
5%
capacitors
5%
metal oxide semiconductors
5%
low voltage
5%
carrier mobility
5%
traveling salesman problem
5%
methodology
5%
energy consumption
5%
