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查看斯高帕斯 (Scopus) 概要
侯 拓宏
教授
前瞻半導體研究所
https://orcid.org/0000-0002-9686-7076
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4638
引文
36
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2475
引文
25
h-指數
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825
引文
14
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1999
2023
每年研究成果
概覽
指紋
網路
計畫
(33)
研究成果
(198)
獎項
(1)
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(1)
類似的個人檔案
(6)
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查看啟用 Tuo-Hung Hou 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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重量
按字母排序
Engineering & Materials Science
Data storage equipment
100%
RRAM
76%
Ferroelectric materials
64%
Gate dielectrics
63%
Nanocrystals
61%
Metals
47%
Oxides
44%
Durability
41%
Polysilicon
35%
Electric potential
35%
Transistors
34%
Field effect transistors
34%
Thin film transistors
31%
Nitrides
27%
High-k dielectric
26%
Annealing
25%
Leakage currents
24%
Transition metals
21%
Electrodes
20%
Temperature
20%
Chemical vapor deposition
20%
Monolayers
19%
Nanowires
19%
Tunnel junctions
19%
Fabrication
18%
Threshold voltage
16%
Deep neural networks
16%
Plasmas
16%
Doping (additives)
15%
Computer hardware
15%
Nitridation
15%
Capacitors
14%
Ferroelectric RAM
14%
Aluminum oxide
14%
Carrier mobility
13%
Charge trapping
13%
Modulation
13%
Sputtering
13%
Gallium
13%
Tunnels
13%
Hafnium
13%
Oxygen vacancies
12%
Defects
12%
Zinc oxide
12%
Indium
12%
Memristors
12%
Electrostatics
12%
Neurons
11%
Neural networks
11%
Silicon
11%
Chemical Compounds
Dielectric Material
52%
Voltage
36%
Field Effect
30%
Nanocrystal
26%
Compound Mobility
23%
Tunneling
23%
Annealing
22%
Leakage Current
21%
Capacitor
19%
Metal
19%
Application
19%
Plastic Property
18%
Oxide
17%
Nitride
15%
Resistance
14%
Amorphous Material
14%
Polarization
14%
Simulation
13%
Behavior as Electrode
12%
Antiferroelectricity
11%
Energy
11%
Monolayer
11%
Polarity
11%
Ambient Reaction Temperature
11%
Ferroelectric Switching
11%
Block Like Crystal
10%
Transition Element
10%
Energy Consumption
10%
Weight
9%
Nanowire
9%
Electric Field
9%
Sputtering
9%
Time
8%
Liquid Film
8%
Tunneling Current
8%
Filament
8%
Electrical Property
8%
Transconductance
8%
Retention Time
7%
Reduction
7%
Reaction Yield
6%
Semiconductor
6%
Polycrystalline Solid
6%
Dioxygen
6%
Grain Size
6%
Magnetic Torque
6%
Antiferroelectric Material
6%
Fermi Level
6%
Surface
5%
Models (Physical)
5%
Physics & Astronomy
endurance
33%
metals
18%
transistors
16%
random access memory
15%
filaments
15%
field effect transistors
13%
carbon nanotube based memory
13%
nanocrystals
12%
cycles
12%
selectors
12%
CMOS
11%
electrodes
11%
cells
10%
performance
10%
electric potential
10%
learning
10%
tunnel junctions
9%
synapses
8%
engineering
8%
oxides
8%
phototransistors
8%
nitrides
8%
vapor deposition
7%
analogs
7%
capacitors
7%
hardware
7%
scaling
7%
resistors
7%
integrated circuits
7%
characterization
7%
leakage
6%
titanium oxides
6%
fabrication
6%
neurons
6%
silicon
6%
molecular orbitals
6%
TOPS (spacecraft)
6%
programming
6%
plastic properties
5%
metal oxide semiconductors
5%
oxygen
5%
low voltage
5%
annealing
5%
recovery
5%
electronics
5%
carrier mobility
5%
traveling salesman problem
5%
transition metals
5%
methodology
5%
spikes
5%
