每年研究成果
每年研究成果
個人檔案
教育/學術資格
PhD, 電機工學, The University of Tokyo
指紋
查看啟用 Tsung-En Lee 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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過去五年中的合作和熱門研究領域
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Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors
Chen, Y. X., Wang, Y. L., Li, F. J., Chang, S.-J., Lee, T. E., Cheng, C. C., Lee, M. C., Li, H. H., Lin, Y. H. & Chien, C. H., 2024, 於: IEEE Transactions on Nanotechnology. 23, p. 299-302 4 p.研究成果: Article › 同行評審
1 引文 斯高帕斯（Scopus） -
Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping
Zhang, Z., Passlack, M., Pitner, G., Natani, S., Su, S. K., Chao, T. A., Liew, S. L., Hou, V. D. H., Hsu, C. F., Shipley, W. E., Safron, N., Doornbos, G., Lee, T. E., Radu, I., Kummel, A. C., Bandaru, P. & Wong, H. S. P., 12月 2023, 於: Nature Electronics. 6, 12, p. 999-1008 10 p.研究成果: Article › 同行評審
10 引文 斯高帕斯（Scopus） -
High-Endurance MoS2 FeFET with Operating Voltage Fess Than IV for eNVM in Scaled CMOS Technologies
Lee, T. E., Chiang, H. L., Chang, C. Y., Su, Y. C., Chang, S.-J., Wu, J. J., Lin, B. J., Wang, J. F., Haw, S. C., Chiu, S. J., Ching, H. L., Lin, Y. G., Yun, W. S., Hsu, C. F., Lee, H., Lee, T. Y., Passlack, M., Cheng, C. C., Chang, C. S. & Wong, H. S. P. 及其他4, , 2023, 2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc., (Technical Digest - International Electron Devices Meeting, IEDM).研究成果: Conference contribution › 同行評審
1 引文 斯高帕斯（Scopus） -
Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping
Safion, N., Chiu, H. Y., Chao, T. A., Su, S. K., Passlack, M., Chiu, K. H., Chen, C. W., Kei, C. C., Chou, C.-H., Lee, T. E., Wang, J. F., Chang, C. S., Liew, S. L., Hou, V. D. H., Wang, H., Chang, W. H., Wong, H. S. P., Pitner, G., Chien, C. H. & Radu, I. P., 2023, 2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc., (Technical Digest - International Electron Devices Meeting, IEDM).研究成果: Conference contribution › 同行評審
1 引文 斯高帕斯（Scopus） -
Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal Contact
Chung, Y. Y., Yun, W. S., Chou, B. J., Hsu, C. F., Yu, S. M., Arutchelvan, G., Li, M. Y., Lee, T. E., Lin, B. J., Li, C. Y., Wei, A., Sathaiya, D. M., Chung, C. T., Liew, S. L., Hou, V. D. H., Chang, W. H., Liu, B. H., Chen, C. W., Su, C. Y. & Kei, C. C. 及其他7, , 2023, 2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc., (Technical Digest - International Electron Devices Meeting, IEDM).研究成果: Conference contribution › 同行評審
6 引文 斯高帕斯（Scopus）