Tseung-Yuen Tseng

2015

The impact of pre/post-metal deposition annealing on negative-bias-temperature instability in HfO₂ stack p-channel metal-oxide-semiconductor field effect transistors

Lu, Y. H., Chang, T. C., Ho, S. H., Chen, C. E., Tsai, J. Y., Liu, K. J., Liu, X. W., Tseng, T. Y., Cheng, O., Huang, C. T. & Lu, C. S., 1 6月 2015, 於: ECS Solid State Letters. 4, 8, p. Q37-Q39

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO₂/TaN memory device

Tsai, T. L., Ho, T. H. & Tseng, T-Y., 28 1月 2015, 於: Journal of Physics D: Applied Physics. 48, 3, 6 p., 035108.

研究成果: Article › 同行評審

20 引文斯高帕斯（Scopus）

2014

A novel strongly correlated electronic thin-film laser energy/power meter based on anisotropic Seebeck effect

Zhang, G. Y., Zhang, H., Tan, S. L., Zhang, P. X., Tseng, T-Y., Habermeier, H. U., Lin, C. T. & Singjai, P., 1 1月 2014, 於: Applied Physics A: Materials Science and Processing. 116, 3, p. 1033-1039 7 p.

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

Compact Ga-doped ZnO nanorod thin film for making high-performance transparent resistive switching memory

Huang, C. Y., Ho, Y. T., Hung, C. J. & Tseng, T-Y., 1 10月 2014, 於: IEEE Transactions on Electron Devices. 61, 10, p. 3435-3441 7 p., 6875903.

研究成果: Article › 同行評審

35 引文斯高帕斯（Scopus）

Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

Tsai, J. Y., Chang, T. C., Chen, C. E., Ho, S. H., Liu, K. J., Lu, Y. H., Liu, X. W., Tseng, T-Y., Cheng, O., Huang, C. T. & Lu, C. S., 6 10月 2014, 於: Applied Physics Letters. 105, 14, 5 p., 143505.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Forming-free bipolar resistive switching in nonstoichiometric ceria films

Ismail, M., Huang, C. Y., Panda, D., Hung, C. J., Tsai, T. L., Jieng, J. H., Lin, C. A., Chand, U., Rana, A. M., Ahmed, E., Talib, I., Nadeem, M. Y. & Tseng, T-Y., 1月 2014, 於: Nanoscale Research Letters. 9, 1, p. 1-8 8 p.

研究成果: Article › 同行評審

開啟存取

88 引文斯高帕斯（Scopus）

High energy density asymmetric pseudocapacitors fabricated by graphene/carbon nanotube/MnO₂ plus carbon nanotubes nanocomposites electrode

Hung, C. J., Lin, P. & Tseng, T-Y., 1 8月 2014, 於: Journal of Power Sources. 259, 1, p. 145-153 9 p.

研究成果: Article › 同行評審

39 引文斯高帕斯（Scopus）

Hydrothermal formation of tungsten trioxide nanowire networks on seed-free substrates and their properties in electrochromic device

Hung, C. J., Huang, Y. H., Chen, C. H., Lin, P. & Tseng, T-Y., 5月 2014, 於: IEEE Transactions on Components, Packaging and Manufacturing Technology. 4, 5, p. 831-839 9 p., 6725611.

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO₂ structure using fast I-V measurement

Ho, S. H., Chang, T. C., Lu, Y. H., Chen, C. E., Tsai, J. Y., Liu, K. J., Tseng, T-Y., Cheng, O., Huang, C. T. & Lu, C. S., 17 3月 2014, 於: Applied Physics Letters. 104, 11, 113503.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Mechanism of high temperature retention property (up to 200 °c) in ZrO₂-based memory device with inserting a zno thin layer

Chand, U., Huang, C. Y. & Tseng, T-Y., 1 10月 2014, 於: IEEE Electron Device Letters. 35, 10, p. 1019-1021 3 p., 6879276.

研究成果: Article › 同行評審

28 引文斯高帕斯（Scopus）

On the origin of anomalous off-current under hot carrier stress in p-channel DDDMOS transistors with STI structure

Chen, C. E., Chang, T. C., Chen, H. M., You, B., Yang, K. H., Ho, S. H., Tsai, J. Y., Liu, K. J., Lu, Y. H., Hung, Y. J., Tai, Y-H. & Tseng, T-Y., 1 6月 2014, 於: IEEE Electron Device Letters. 35, 6, p. 651-653 3 p., 6805192.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Overview of emerging nonvolatile memory technologies

Meena, J. S., Sze, S. M., Chand, U. & Tseng, T-Y., 25 9月 2014, 於: Nanoscale Research Letters. 9, 1, p. 1-33 33 p.

研究成果: Article › 同行評審

開啟存取

479 引文斯高帕斯（Scopus）

Resistive switching characteristics of Pt/CeO_x/TiN memory device

Ismail, M., Talib, I., Huang, C. Y., Hung, C. J., Tsai, T. L., Jieng, J. H., Chand, U., Lin, C. A., Ahmed, E., Rana, A. M., Nadeem, M. Y. & Tseng, T-Y., 5月 2014, 於: Japanese journal of applied physics. 53, 6, 4 p., 060303.

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

Switching mechanism of double forming process phenomenon in ZrO_x/HfO_y bilayer resistive switching memory structure with large endurance

Huang, C. Y., Huang, C. Y., Tsai, T. L., Lin, C. A. & Tseng, T-Y., 2月 2014, 於: Applied Physics Letters. 104, 6, 062901.

研究成果: Article › 同行評審

97 引文斯高帕斯（Scopus）

2013

Abnormal threshold voltage shift under hot carrier stress in Ti _1-xN_x/HfO₂ p-channel metal-oxide-semiconductor field-effect transistors

Tsai, J. Y., Chang, T. C., Lo, W. H., Ho, S. H., Chen, C. E., Chen, H. M., Tseng, T-Y., Tai, Y-H., Cheng, O. & Huang, C. T., 9月 2013, 於: Journal of Applied Physics. 114, 12, 6 p., 124505.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

A high-performance laser energy meter based on anisotropic Seebeck effect in a strongly correlated electronic thin film

Zhang, G. Y., Zheng, H. R., Huang, W. H., Zhang, X. Y., Gao, D. L., Zhang, H., Zhang, P. X., Tseng, T-Y., Habermeier, H. U., Lin, C. T. & Cheng, H. H., 1 11月 2013, 於: Applied Physics A: Materials Science and Processing. 113, 2, p. 347-353 7 p.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Anomalous gate current hump after dynamic negative bias stress and negative-bias temperature-instability in p-MOSFETs with Hf_xZr _1-xO₂ and HfO₂/metal gate stacks

Ho, S. H., Chang, T. C., Wu, C. W., Lo, W. H., Chen, C. E., Tsai, J. Y., Chen, H. M., Liu, G. R., Tseng, T-Y., Cheng, O., Huang, C. T., Chen, D. & Sze, S. M., 7月 2013, 於: ECS Journal of Solid State Science and Technology. 2, 9, 6 p.

研究成果: Article › 同行評審

Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistors

Chen, Y. C., Chang, T. C., Li, H. W., Chung, W. F., Chen, S. C., Wu, C. P., Chen, Y. H., Tai, Y-H., Tseng, T-Y. & Yeh(Huang), F. S., 25 9月 2013, 於: Surface and Coatings Technology. 231, p. 531-534 4 p.

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

Electrophoretic fabrication and pseudocapacitive properties of graphene/manganese oxide/carbon nanotube nanocomposites

Hung, C. J., Lin, P. & Tseng, T-Y., 15 7月 2013, 於: Journal of Power Sources. 243, 1, p. 594-602 9 p.

研究成果: Article › 同行評審

44 引文斯高帕斯（Scopus）

High-k shallow traps observed by charge pumping with varying discharging times

Ho, S. H., Chang, T. C., Lu, Y. H., Wang, B. W., Lo, W. H., Chen, C. E., Tsai, J. Y., Chen, H. M., Liu, K. J., Tseng, T-Y., Cheng, O., Huang, C. T., Chen, T. F. & Cao, X. X., 7 11月 2013, 於: Journal of Applied Physics. 114, 17, 174506.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Improved resistive switching characteristics by Al2O3 layers inclusion in HfO2-based RRAM devices

Huang, C. Y., Jieng, J. H., Jang, W. Y., Lin, C. H. & Tseng, T-Y., 5月 2013, 於: ECS Solid State Letters. 2, 8

研究成果: Article › 同行評審

21 引文斯高帕斯（Scopus）

Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO₂/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Ho, S. H., Chang, T. C., Wu, C. W., Lo, W. H., Chen, C. E., Tsai, J. Y., Liu, G. R., Chen, H. M., Lu, Y. S., Wang, B. W., Tseng, T-Y., Cheng, O., Huang, C. T. & Sze, S. M., 7 1月 2013, 於: Applied Physics Letters. 102, 1, 012103.

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO ₂ /metal gate stacks

Ho, S. H., Chang, T. C., Wang, B. W., Lu, Y. S., Lo, W. H., Chen, C. E., Tsai, J. Y., Chen, H. M., Liu, G. R., Tseng, T-Y., Cheng, O., Huang, C. T. & Cao, X. X., 7 1月 2013, 於: Applied Physics Letters. 102, 1, 5 p., 012106.

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

Investigation of lateral trap position by random telegraph signal analysis in moderate inversion in n-channel MOSFETs

Chen, C. E., Chang, T. C., You, B., Lo, W. H., Ho, S. H., Dai, C. H., Tsai, J. Y., Chen, H. M., Liu, G. R., Tai, Y-H. & Tseng, T-Y., 2 12月 2013, 於: ECS Solid State Letters. 2, 11

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Resistive switching behavior of sol-gel deposited TiO₂ thin films under different heating ambience

Lai, C. H., Chen, C. H. & Tseng, T-Y., 25 9月 2013, 於: Surface and Coatings Technology. 231, p. 399-402 4 p.

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

Unipolar resistive switching behavior in Pt/HfO₂/TiN device with inserting ZrO₂ layer and its 1 diode-1 resistor characteristics

Lee, D. Y., Tsai, T. L. & Tseng, T-Y., 15 7月 2013, 於: Applied Physics Letters. 103, 3, 5 p., 032905.

研究成果: Article › 同行評審

26 引文斯高帕斯（Scopus）

Unipolar resistive switching in ZrO₂ thin films

Zhang, G. Y., Lee, D. Y., Yao, I. C., Hung, C. J., Wang, S. Y., Huang, T. Y., Wu, J. W. & Tseng, T-Y., 1 4月 2013, 於: Japanese Journal of Applied Physics. 52, 4 PART 1, 7 p., 041101.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

2012

Analysis of an anomalous hump in gate current after dynamic negative bias stress in Hf _xZr _1-xO ₂/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Ho, S. H., Chang, T. C., Wu, C. W., Lo, W. H., Chen, C. E., Tsai, J. Y., Luo, H. P., Tseng, T-Y., Cheng, O., Huang, C. T. & Sze, S. M., 30 7月 2012, 於: Applied Physics Letters. 101, 5, 052105.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

Analysis of anomalous traps measured by charge pumping technique in HfO₂/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Ho, S. H., Chang, T. C., Lu, Y. S., Lo, W. H., Chen, C. E., Tsai, J. Y., Chen, H. M., Wu, C. W., Luo, H. P., Liu, G. R., Tseng, T-Y., Cheng, O., Huang, C. T. & Sze, S. M., 3 12月 2012, 於: Applied Physics Letters. 101, 23, 233509.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO 2/Pt nonvolatile memory with 1T1R architecture

Wu, M. C., Jang, W. Y., Lin, C. H. & Tseng, T-Y., 1 6月 2012, 於: Semiconductor Science and Technology. 27, 6, 065010.

研究成果: Article › 同行評審

75 引文斯高帕斯（Scopus）

Bottom electrode modification of ZrO ₂ resistive switching memory device with Au nanodots

Lee, D. Y., Yao, I. C. & Tseng, T-Y., 1 2月 2012, 於: Japanese Journal of Applied Physics. 51, 2 PART 2, 02BJ04.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Electrical properties and reliability of ZnO-based nanorod current emitters

Yao, I. C., Lin, P., Huang, S. H. & Tseng, T-Y., 17 7月 2012, 於: IEEE Transactions on Components, Packaging and Manufacturing Technology. 2, 7, p. 1143-1150 8 p., 6203430.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices

Yao, I. C., Lee, D. Y., Tseng, T-Y. & Lin, P., 13 4月 2012, 於: Nanotechnology. 23, 14, 145201.

研究成果: Article › 同行評審

57 引文斯高帕斯（Scopus）

Field emission properties and reliability of ZnO nanorod, nanopagoda, and nanotip current emitters

Yao, I. C., Lin, P. & Tseng, T-Y., 17 7月 2012, 於: IEEE Transactions on Nanotechnology. 11, 4, p. 746-750 5 p., 6187734.

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

Oxygen-adsorption-induced anomalous capacitance degradation in amorphous indium-gallium-zinc-oxide thin-film-transistors under hot-carrier stress

Chung, W. F., Chang, T. C., Lin, C. S., Tu, K. J., Li, H. W., Tseng, T-Y., Chen, Y. C. & Tai, Y-H., 29 2月 2012, 於: Journal of the Electrochemical Society. 159, 3

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

Resistive switching characteristics of nickel silicide layer embedded HfO ₂ film

Panda, D., Huang, C. Y. & Tseng, T-Y., 12 3月 2012, 於: Applied Physics Letters. 100, 11, 112901.

研究成果: Article › 同行評審

79 引文斯高帕斯（Scopus）

Robust unipolar resistive switching of Co nano-dots embedded ZrO ₂ thin film memories and their switching mechanism

Wu, M. C., Wu, T. H. & Tseng, T-Y., 1 1月 2012, 於: Journal of Applied Physics. 111, 1, 014505.

研究成果: Article › 同行評審

34 引文斯高帕斯（Scopus）

Unipolar resistive switching characteristics of a ZrO ₂ memory device with oxygen ion conductor buffer layer

Lee, D. Y. & Tseng, T-Y., 11 5月 2012, 於: IEEE Electron Device Letters. 33, 6, p. 803-805 3 p., 6196172.

研究成果: Article › 同行評審

28 引文斯高帕斯（Scopus）

ZnO nanorods grown on polymer substrates as UV photodetectors

Yao, I. C., Tseng, T-Y. & Lin, P., 1 5月 2012, 於: Sensors and Actuators, A: Physical. 178, p. 26-31 6 p.

研究成果: Article › 同行評審

78 引文斯高帕斯（Scopus）

2011

Dopant activation in single-crystalline germanium by low-temperature microwave annealing

Lee, Y. J., Chuang, S. S., Hsueh, F. K., Lin, H. M., Wu, S. C., Wu, C. Y. & Tseng, T-Y., 1 2月 2011, 於: IEEE Electron Device Letters. 32, 2, p. 194-196 3 p., 5665750.

研究成果: Article › 同行評審

28 引文斯高帕斯（Scopus）

Electrophoretic fabrication and characterizations of manganese oxide/carbon nanotube nanocomposite pseudocapacitors

Hung, C. J., Hung, J. H., Lin, P. & Tseng, T-Y., 1 8月 2011, 於: Journal of the Electrochemical Society. 158, 8

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors

Chung, W. F., Chang, T. C., Li, H. W., Chen, S. C., Chen, Y. C., Tseng, T-Y. & Tai, Y-H., 11 4月 2011, 於: Applied Physics Letters. 98, 15, 152109.

研究成果: Article › 同行評審

79 引文斯高帕斯（Scopus）

Forming-free resistive switching behaviors in Cr-embedded Ga ₂O ₃ thin film memories

Lee, D. Y. & Tseng, T-Y., 1 12月 2011, 於: Journal of Applied Physics. 110, 11, 114117.

研究成果: Article › 同行評審

39 引文斯高帕斯（Scopus）

H₂O-assisted O₂ adsorption in sol-gel derived amorphous indium gallium zinc oxide thin film transistors

Chung, W. F., Chang, T. C., Li, H. W., Chen, S. C., Chen, Y. C., Tseng, T-Y. & Tai, Y-H., 13 4月 2011, 於: Electrochemical and Solid-State Letters. 14, 6

研究成果: Article › 同行評審

20 引文斯高帕斯（Scopus）

High device yield of resistive switching characteristics in oxygen-annealed SrZrO₃ memory devices

Lin, M. H., Wu, M. C., Huang, Y. H., Lin, C. H. & Tseng, T-Y., 1 4月 2011, 於: IEEE Transactions on Electron Devices. 58, 4, p. 1182-1188 7 p., 5704573.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Improved resistive switching properties of Ti/ZrO ₂ /Pt memory devices for RRAM application

Wang, S. Y., Tsai, C. H., Lee, D. Y., Lin, C. Y., Lin, C. C. & Tseng, T-Y., 1 7月 2011, 於: Microelectronic Engineering. 88, 7, p. 1628-1632 5 p.

研究成果: Article › 同行評審

34 引文斯高帕斯（Scopus）

Influence of H₂O dipole on subthreshold swing of amorphous indium-gallium-zinc-oxide thin film transistors

Chung, W. F., Chang, T. C., Li, H. W., Chen, C. W., Chen, Y. C., Chen, S. C., Tseng, T-Y. & Tai, Y-H., 28 1月 2011, 於: Electrochemical and Solid-State Letters. 14, 3

研究成果: Article › 同行評審

45 引文斯高帕斯（Scopus）

Influence of nanocrystals on resistive switching characteristic in binary metal oxides memory devices

Tsai, Y. T., Chang, T. C., Lin, C. C., Chen, S. C., Chen, C. W., Sze, S. M., Yeh, F. S. & Tseng, T-Y., 28 1月 2011, 於: Electrochemical and Solid-State Letters. 14, 3

研究成果: Article › 同行評審

55 引文斯高帕斯（Scopus）

Investigation for coexistence of dual resistive switching characteristics in DyMn₂O₅ memory devices

Tsai, Y. T., Chang, T. C., Huang, W. L., Huang, C. W., Syu, Y. E., Chen, S. C., Sze, S. M., Tsai, M. J. & Tseng, T-Y., 29 8月 2011, 於: Applied Physics Letters. 99, 9, 092106.

研究成果: Article › 同行評審

45 引文斯高帕斯（Scopus）

Low-power and highly reliable multilevel operation in ZrO₂ 1T1R RRAM

Wu, M. C., Lin, Y. W., Jang, W. Y., Lin, C. H. & Tseng, T-Y., 1 8月 2011, 於: IEEE Electron Device Letters. 32, 8, p. 1026-1028 3 p., 5929488.

研究成果: Article › 同行評審

89 引文斯高帕斯（Scopus）

曾 俊元

研究成果

搜尋結果

曾俊元