Tseung-Yuen Tseng

2018

Flexible solid-like electrolytes with ultrahigh conductivity and their applications in all-solid-state supercapacitors

Yang, C. C., Lin, H. Y., Kumar, A., Pattanayak, B., Tsai, H. Y., Winie, T. & Tseng, T-Y., 1 1月 2018, 於: RSC Advances. 8, 53, p. 30239-30247 9 p.

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6 引文斯高帕斯（Scopus）

PVdF-HFP quasi-solid-state electrolyte for application in dye-sensitized solar cells

Saaid, F. I., Tseng, T-Y. & Winie, T., 1 12月 2018, 於: International Journal of Technology. 9, 6, p. 1187-1195 9 p.

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6 引文斯高帕斯（Scopus）

Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory

Singh, P., Simanjuntak, F. M., Kumar, A. & Tseng, T-Y., 30 8月 2018, 於: Thin Solid Films. 660, p. 828-833 6 p.

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24 引文斯高帕斯（Scopus）

Resistive Switching Characteristics and Reliability of SiN_x-Based Conductive Bridge Random Access Memory

Lin, C. A., Dai, G. J. & Tseng, T-Y., 1 9月 2018, 於: IEEE Transactions on Electron Devices. 65, 9, p. 3775-3779 5 p., 8424915.

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2 引文斯高帕斯（Scopus）

Role of Al₂O₃ thin layer on improving the resistive switching properties of Ta₅Si₃-based conductive bridge random accesses memory device

Kumar, D., Aluguri, R., Chand, U. & Tseng, T-Y., 4月 2018, 於: Japanese journal of applied physics. 57, 4S, p. 1-4 4 p., 04FE16.

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6 引文斯高帕斯（Scopus）

Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell

Simanjuntak, F. M., Chandrasekaran, S., Lin, C. C. & Tseng, T-Y., 1 1月 2018, 於: Nanoscale Research Letters. 13, p. 1-8 8 p., 327.

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19 引文斯高帕斯（Scopus）

The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO₂-based resistive switching random access memory devices

Chandrasekaran, S., Simanjuntak, F. M., Aluguri, R. & Tseng, T-Y., 30 8月 2018, 於: Thin Solid Films. 660, p. 777-781 5 p.

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21 引文斯高帕斯（Scopus）

2017

Carbon nanotube/nitrogen-doped reduced graphene oxide nanocomposites and their application in supercapacitors

Yang, C. C., Tsai, M. H., Huang, C. W., Yen, P. J., Pan, C. C., Wu, W-W., Wei, K-H., Dung, L-R. & Tseng, T-Y., 8月 2017, 於: Journal of Nanoscience and Nanotechnology. 17, 8, p. 5366-5373 8 p.

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9 引文斯高帕斯（Scopus）

Device Instability of ReRAM and a Novel Reference Cell Design for Wide Temperature Range Operation

Lin, Y. H., Lin, Y. Y., Lee, F. M., Ho, Y. H., Hsu, K. C., Lee, M. H., Lee, D. Y., Chiang, K. H., Yang, C. C., Li, C. H., Wu, S. W., Lei, C. Y., Lin, C. M., Chen, C. J., Chen, K. H., Lung, H. L., Wang, K. C., Tseng, T-Y. & Lu, C. Y., 1 9月 2017, 於: IEEE Electron Device Letters. 38, 9, p. 1224-1227 4 p., 7993086.

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9 引文斯高帕斯（Scopus）

Dynamic observation of reversible lithium storage phenomena in hybrid supercapacitor devices

Huang, G. M., Tsai, T. C., Huang, C. W., Kumar, N., Tseng, T-Y. & Wu, W-W., 1 11月 2017, 於: Nano Energy. 41, p. 494-500 7 p.

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15 引文斯高帕斯（Scopus）

Effect of barrier layer on switching polarity of ZrO₂-based conducting-bridge random access memory

Chandrasekaran, S., Simanjuntak, F. M., Tsai, T. L., Lin, C. A. & Tseng, T-Y., 11 9月 2017, 於: Applied Physics Letters. 111, 11, p. 1-5 5 p., 113108.

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22 引文斯高帕斯（Scopus）

Endurance improvement and resistance stabilization of transparent multilayer resistance switching devices with oxygen deficient WO _x layer and heat dissipating AlN buffer layer

Lin, Y. H., Huang, D. C., Lou, J. C. & Tseng, T-Y., 31 12月 2017, 於: Thin Solid Films. 644, p. 10-15 6 p.

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4 引文斯高帕斯（Scopus）

Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al₂O₃ thin layer

Kumar, D., Aluguri, R., Chand, U. & Tseng, T-Y., 15 5月 2017, 於: Applied Physics Letters. 110, 20, p. 1-5 5 p., 203102.

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59 引文斯高帕斯（Scopus）

Facile production of graphene nanosheets comprising nitrogen-doping through in situ cathodic plasma formation during electrochemical exfoliation

Yen, P. J., Ting, C. C., Chiu, Y. C., Tseng, T-Y., Hsu, Y. J., Wu, W-W. & Wei, K-H., 14 3月 2017, 於: Journal of Materials Chemistry C. 5, 10, p. 2597-2602 6 p.

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27 引文斯高帕斯（Scopus）

Fast-IV measurement investigation of the role of TiN gate nitrogen concentration on bulk traps in HfO₂ layer in p-MOSFETs

Lu, Y. H., Chang, T. C., Liao, J. C., Chen, L. H., Lin, Y. S., Chen, C. E., Liu, K. J., Liu, X. W., Lin, C. Y., Lien, C. H., Tseng, T-Y., Cheng, O., Huang, C. T. & Yen, W. T., 1 6月 2017, 於: IEEE Transactions on Device and Materials Reliability. 17, 2, p. 475-478 4 p., 7862173.

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5 引文斯高帕斯（Scopus）

High mechanical strength thin HIT solar cells with graphene back contact

Lin, S-C., Parashar, P., Yang, C. C., Huang, W. M., Huang, Y. W., Jian, D. R., Kao, M. H., Chen, S. W., Shen, C. H., Shieh, J. M. & Tseng, T-Y., 1 10月 2017, 於: IEEE Photonics Journal. 9, 5, 8030057.

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4 引文斯高帕斯（Scopus）

In Situ TEM Investigation of the Electrochemical Behavior in CNTs/MnO₂ -Based Energy Storage Devices

Tsai, T. C., Huang, G. M., Huang, C. W., Chen, J. Y., Yang, C. C., Tseng, T-Y. & Wu, W-W., 19 9月 2017, 於: Analytical Chemistry. 89, 18, p. 9671-9675 5 p.

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6 引文斯高帕斯（Scopus）

Lithography-free thin-titanium-nanocone metamaterial perfect absorbers using ZnO nanostructures

Lin, S-C., Parashar, P., Yang, C. C., Jian, D. R., Huang, W. M., Huang, Y. W. & Tseng, T-Y., 1 10月 2017, 於: Optical Materials Express. 7, 10, 10 p., 301712.

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2 引文斯高帕斯（Scopus）

Metal oxide resistive switching memory: Materials, properties and switching mechanisms

Kumar, D., Aluguri, R., Chand, U. & Tseng, T-Y., 1 8月 2017, 於: Ceramics International. 43, p. S547-S556

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67 引文斯高帕斯（Scopus）

One bipolar transistor selector - One resistive random access memory device for cross bar memory array

Aluguri, R., Kumar, D., Simanjuntak, F. M. & Tseng, T-Y., 1 9月 2017, 於: AIP Advances. 7, 9, 095118.

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24 引文斯高帕斯（Scopus）

Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell

Simanjuntak, F. M., Chandrasekaran, S., Pattanayak, B., Lin, C. C. & Tseng, T-Y., 20 9月 2017, 於: Nanotechnology. 28, 38, p. 1-8 8 p., 38LT02.

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20 引文斯高帕斯（Scopus）

Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

Simanjuntak, F. M., Singh, P., Chandrasekaran, S., Lumbantoruan, F. J., Yang, C. C., Huang, C. J., Lin, C. C. & Tseng, T-Y., 12月 2017, 於: Semiconductor Science and Technology. 32, 12, p. 1-7 7 p., 124003.

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23 引文斯高帕斯（Scopus）

Ternary Au/ZnO/rGO nanocomposites electrodes for high performance electrochemical storage devices

Chaudhary, M., Doong, R. A., Kumar, N. & Tseng, T-Y., 31 10月 2017, 於: Applied Surface Science. 420, p. 118-128 11 p.

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21 引文斯高帕斯（Scopus）

Ultra-shallow junction formation by monolayer doping process in single crystalline Si and Ge for future CMOS devices

Chuang, S. S., Cho, T. C., Sung, P. J., Kao, K. H., Chen, H. J. H., Lee, Y. J., Current, M. I. & Tseng, T-Y., 1 4月 2017, 於: ECS Journal of Solid State Science and Technology. 6, 5, p. P350-P355

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11 引文斯高帕斯（Scopus）

2016

A high performance transparent resistive switching memory made from ZrO ₂ /AlON bilayer structure

Tsai, T. L., Chang, H. Y., Lou, J. J. C. & Tseng, T-Y., 11 4月 2016, 於: Applied Physics Letters. 108, 15, 153505.

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47 引文斯高帕斯（Scopus）

Analysis of oxide trap characteristics by random telegraph signals in nMOSFETs with HfO₂-based gate dielectrics

Chen, C. E., Chang, T. C., You, B., Tsai, J. Y., Lo, W. H., Ho, S. H., Liu, K. J., Lu, Y. H., Liu, X. W., Hung, Y. J., Tseng, T-Y., Cheng, O., Huang, C. T. & Lu, C. S., 1 4月 2016, 於: IEEE Electron Device Letters. 37, 4, p. 359-362 4 p., 7421987.

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3 引文斯高帕斯（Scopus）

A Novel Varying-Bias Read Scheme for MLC and Wide Temperature Range TMO ReRAM

Lin, Y. H., Lee, M. H., Wu, J. Y., Lin, Y. Y., Lee, F. M., Lee, D. Y., Chiang, K. H., Lai, E. K., Tseng, T-Y. & Lu, C. Y., 1 11月 2016, 於: IEEE Electron Device Letters. 37, 11, p. 1426-1429 4 p.

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9 引文斯高帕斯（Scopus）

A numerical study of multi filament formation in metal-ion based CBRAM

Berco, D. & Tseng, T-Y., 1 2月 2016, 於: AIP Advances. 6, 2, 025212.

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10 引文斯高帕斯（Scopus）

Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal–oxide–semiconductor field effect transistors

Lu, Y. H., Chang, T. C., Ho, S. H., Chen, C. E., Tsai, J. Y., Liu, K. J., Liu, X. W., Lin, C. Y., Tseng, T-Y., Cheng, O., Huang, C. T. & Yen, W. T., 1 12月 2016, 於: Thin Solid Films. 620, p. 43-47 5 p.

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1 引文斯高帕斯（Scopus）

Enhanced Properties in Conductive-Bridge Resistive Switching Memory with Oxide-Nitride Bilayer Structure

Tsai, T. L., Jiang, F. S., Ho, C. H., Lin, C. H. & Tseng, T-Y., 1 10月 2016, 於: IEEE Electron Device Letters. 37, 10, p. 1284-1287 4 p., 7552563.

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27 引文斯高帕斯（Scopus）

Fabrication of carbon nanotube/cobalt oxide nanocomposites via electrophoretic deposition for supercapacitor electrodes

Kumar, N., Yu, Y. C., Lu, Y. H. & Tseng, T-Y., 1 3月 2016, 於: Journal of Materials Science. 51, 5, p. 2320-2329 10 p.

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27 引文斯高帕斯（Scopus）

Impact of post-metal deposition annealing temperature on performance and reliability of high-K metal-gate n-FinFETs

Lin, C. Y., Chang, T. C., Liu, K. J., Tsai, J. Y., Chen, C. E., Liu, H. W., Lu, Y. H., Tseng, T-Y., Cheng, O. & Huang, C. T., 1 12月 2016, 於: Thin Solid Films. 620, p. 30-33 4 p.

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1 引文斯高帕斯（Scopus）

Impacts of Co doping on ZnO transparent switching memory device characteristics

Simanjuntak, F. M., Prasad, O. K., Panda, D., Lin, C. A., Tsai, T. L., Wei, K-H. & Tseng, T-Y., 2 5月 2016, 於: Applied Physics Letters. 108, 18, 6 p., 183506.

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66 引文斯高帕斯（Scopus）

Observing the evolution of graphene layers at high current density

Huang, C. W., Chen, J. Y., Chiu, C. H., Hsin, C. L., Tseng, T-Y. & Wu, W-W., 1 12月 2016, 於: Nano Research. 9, 12, p. 3663-3670 8 p.

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19 引文斯高帕斯（Scopus）

Probing the electrochemical properties of an electrophoretically deposited Co₃O₄/rGO/CNTs nanocomposite for supercapacitor applications

Kumar, N., Huang, C. W., Yen, P. J., Wu, W-W., Wei, K-H. & Tseng, T-Y., 6月 2016, 於: RSC Advances. 6, 65, p. 60578-60586 9 p.

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26 引文斯高帕斯（Scopus）

Temperature induced complementary switching in titanium oxide resistive random access memory

Panda, D., Simanjuntak, F. M. & Tseng, T-Y., 1 7月 2016, 於: AIP Advances. 6, 7, 075314.

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28 引文斯高帕斯（Scopus）

Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

Liu, H. W., Chang, T. C., Tsai, J. Y., Chen, C. E., Liu, K. J., Lu, Y. H., Lin, C. Y., Tseng, T-Y., Cheng, O., Huang, C. T. & Ye, Y. H., 25 4月 2016, 於: Applied Physics Letters. 108, 17, 5 p., 173504.

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2 引文斯高帕斯（Scopus）

2015

A comprehensive study of bipolar operation in resistive switching memory devices

Berco, D. & Tseng, T-Y., 1 8月 2015, 於: Journal of Computational Electronics. 15, 2, p. 577-585 9 p.

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17 引文斯高帕斯（Scopus）

A method to determine the located region of lateral trap position by analysis of three-level random telegraph signals in n-MOSFETs

Chen, C. E., Chang, T. C., You, B., Tsai, J. Y., Lo, W. H., Ho, S. H., Liu, K. J., Lu, Y. H., Hung, Y. J., Tseng, T-Y., Wu, J., Tsai, W. K., Chenge, K. Y. & Syu, Y. E., 1 1月 2015, 於: ECS Solid State Letters. 4, 10, p. Q47-Q49

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1 引文斯高帕斯（Scopus）

A numerical analysis of progressive and abrupt reset in conductive bridging RRAM

Berco, D. & Tseng, T-Y., 8月 2015, 於: Journal of Computational Electronics. 15, 2, p. 586-594 9 p.

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7 引文斯高帕斯（Scopus）

A numerical study of forming voltage and switching polarity dependence on Ti top electrode thickness in Zr _{O 2} RRAM

Berco, D. & Tseng, T-Y., 12月 2015, 於: Journal of Computational Electronics. 15, 2, p. 595-601 7 p.

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10 引文斯高帕斯（Scopus）

A stochastic simulation method for the assessment of resistive random access memory retention reliability

Berco, D. & Tseng, T-Y., 21 12月 2015, 於: Applied Physics Letters. 107, 25, 253504.

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7 引文斯高帕斯（Scopus）

Enhanced switching uniformity in AZO/ZnO_1-x/ITO transparent resistive memory devices by bipolar double forming

Simanjuntak, F. M., Panda, D., Tsai, T. L., Lin, C. A., Wei, K-H. & Tseng, T-Y., 20 7月 2015, 於: Applied Physics Letters. 107, 3, 6 p., 033505.

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46 引文斯高帕斯（Scopus）

Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

Simanjuntak, F. M., Panda, D., Tsai, T. L., Lin, C. A., Wei, K-H. & Tseng, T-Y., 7月 2015, 於: Journal of Materials Science. 50, 21, p. 6961-6969 9 p.

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47 引文斯高帕斯（Scopus）

Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO₂-Based Oxide RRAM and Conductive-Bridge RAM Devices

Tsai, T. L., Chang, H. Y., Jiang, F. S. & Tseng, T-Y., 1 11月 2015, 於: IEEE Electron Device Letters. 36, 11, p. 1146-1148 3 p., 7268841.

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50 引文斯高帕斯（Scopus）

Investigation of thermal stability and reliability of HfO₂ based resistive random access memory devices with cross-bar structure

Chand, U., Huang, K. C., Huang, C. Y., Ho, C. H., Lin, C. H. & Tseng, T. Y., 14 5月 2015, 於: Journal of Applied Physics. 117, 18, 184105.

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38 引文斯高帕斯（Scopus）

Mechanism of Nonlinear Switching in HfO₂-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

Chand, U., Huang, K. C., Huang, C. Y. & Tseng, T-Y., 9 9月 2015, 於: IEEE Transactions on Electron Devices. 62, 11, p. 3665-3670 6 p., 7247697.

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57 引文斯高帕斯（Scopus）

Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture

Chand, U., Huang, C. Y., Kumar, D. & Tseng, T-Y., 16 11月 2015, 於: Applied Physics Letters. 107, 20, 203502.

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29 引文斯高帕斯（Scopus）

Resistive Switching Characteristics of WO₃/ZrO₂ Structure with Forming-Free, Self-Compliance, and Submicroampere Current Operation

Tsai, T. L., Lin, Y. H. & Tseng, T. Y., 1 7月 2015, 於: IEEE Electron Device Letters. 36, 7, p. 675-677 3 p., 7100861.

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31 引文斯高帕斯（Scopus）

Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO₂ resistive switching memory

Chand, U., Huang, C. Y., Jieng, J. H., Jang, W. Y., Lin, C. H. & Tseng, T-Y., 13 4月 2015, 於: Applied Physics Letters. 106, 15, 6 p., 153502.

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56 引文斯高帕斯（Scopus）

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