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查看斯高帕斯 (Scopus) 概要
曾 俊元
教授
電子研究所
https://orcid.org/0000-0003-1158-5289
電話
03-5731879
電子郵件
tseng
nctu.edu
tw
網站
http://www.ee.nctu.edu.tw/People/Professor/individual.php?index=60
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1979 …
2024
每年研究成果
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指紋
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(46)
研究成果
(531)
獎項
(10)
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(3)
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(12)
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重量
按字母排序
Engineering & Materials Science
Aluminum oxide
17%
Annealing
55%
Capacitance
23%
Carbon nanotubes
15%
Current density
17%
Data storage equipment
76%
Defects
20%
Dielectric properties
20%
Doping (additives)
27%
Electric potential
27%
Electric properties
56%
Electrodes
46%
Electrolytes
16%
Fabrication
20%
Ferroelectric materials
22%
Field emission
20%
Grain boundaries
18%
Graphene
15%
Indium
21%
Ions
20%
Leakage currents
27%
Magnetron sputtering
26%
Memristors
20%
Metals
24%
Microwaves
19%
Nanocomposites
18%
Nanocrystals
19%
Nanorods
32%
Nanowires
37%
Oxide films
20%
Oxides
35%
Oxygen
37%
Oxygen vacancies
35%
Permittivity
25%
Plasmas
16%
Positive temperature coefficient
17%
Rapid thermal annealing
19%
RRAM
28%
Sintering
20%
Sol-gels
29%
Substrates
37%
Supercapacitor
32%
Superconducting films
37%
Superconducting materials
30%
Temperature
44%
Thin film transistors
16%
Thin films
100%
Varistors
20%
X ray diffraction
16%
Zinc oxide
30%
Chemical Compounds
Amorphous Material
9%
Annealing
33%
Application
26%
Behavior as Electrode
27%
Capacitor
12%
Ceramic
26%
Conductance
8%
Current Density
15%
Dielectric Constant
19%
Dielectric Material
32%
Dielectric Property
13%
Dielectric Relaxation
8%
Diffusion
8%
Dioxygen
26%
Doping Material
9%
Electric Field
14%
Electrical Property
41%
Energy
10%
Field Effect
12%
Field Emission
11%
Filament
20%
Glass
8%
Grain Boundary
15%
Humidity
8%
Ion
7%
Leakage Current
35%
Liquid Film
58%
Magnetron Sputtering
21%
Metal
9%
Microstructure
12%
Microwave
14%
Multilayer
7%
Nanocomposite
11%
Nanocrystal
9%
Nanorod
14%
Nanowire
22%
Optical Property
8%
Oxide
20%
Plasma
9%
Porosity
12%
Rapid Thermal Annealing
13%
Resistance
38%
Sintering
14%
Sputtering
9%
Superconducting Film
12%
Superconductor
18%
Surface
8%
Time
12%
Voltage
45%
Zinc Oxide
11%
Physics & Astronomy
annealing
24%
capacitance
13%
ceramics
13%
conduction
18%
current density
11%
cycles
9%
defects
12%
degradation
8%
dielectric properties
12%
electric potential
15%
electrical properties
30%
electrical resistivity
8%
electrochemical capacitors
9%
electrodes
22%
endurance
12%
fabrication
8%
field effect transistors
13%
field emission
11%
filaments
11%
gels
17%
glass
8%
grain boundaries
9%
graphene
9%
leakage
19%
magnetron sputtering
16%
metal oxide semiconductors
11%
metals
15%
microstructure
10%
microwaves
14%
nanocomposites
8%
nanocrystals
12%
nanorods
9%
nanowires
19%
optical properties
8%
oxides
12%
oxygen
27%
performance
10%
permittivity
12%
preparation
12%
radio frequencies
10%
random access memory
33%
silicon
9%
sintering
9%
temperature
17%
thin films
61%
transistors
9%
traps
16%
varistors
14%
x rays
10%
zinc oxides
14%