Tien-Sheng Chao

查看斯高帕斯 (Scopus) 概要

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每年研究成果

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256 Article
66 Conference contribution
15 Conference article
6 Paper
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6結果

篩選

2013
Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions
Current, M. I., Lee, Y. J., Lu, Y. L., Cho, T. C., Chao, T-S., Onoda, H., Sekar, K. & Tokoro, N., 1 1月 2013, p. 84-87. 4 p.
研究成果: Paper › 同行評審
2 引文斯高帕斯（Scopus）
2006
Novel FD SOI devices structure for low standby power applications
Ma, M. W., Chao, T-S., Kao, K. H., Huang, J. S. & Lei, T. F., 5月 2006, p. 59-62. 4 p.
研究成果: Paper › 同行評審
2001
High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices
Chao, T-S., Wen Luh Yang, L. Y., Cheng, C. M., Tung Ming Pan, M. P. & Tan Fu Lei, F. L., 1 1月 2001, p. 142-145. 4 p.
研究成果: Paper › 同行評審
1 引文斯高帕斯（Scopus）
2000
Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide
Chen, C. C., Lin, H-C., Chang, C. Y., Chao, T-S., Huang, S. C., Wu, W. F., Huang, T. Y. & Liang, M. S., 1 12月 2000, p. 117-120. 4 p.
研究成果: Paper › 同行評審
6 引文斯高帕斯（Scopus）
1997
Combination effects of nitrogen implantation at S/D extension and N ₂ O oxide on 0.18 μm n- and p-MOSFETs
Chao, T-S., Chien, C-H., Chiao, S. K., Lin, H-C., Liaw, M. C., Chen, L. P., Huang, T. Y., Lei, T. F. & Chang, C. Y., 1 1月 1997, p. 316-320. 5 p.
研究成果: Paper › 同行評審
1 引文斯高帕斯（Scopus）
1995
Process optimization for preventing boron-penetration using P or as co-implant in p-poly gate of P-MOSFETs
Sun, W. T., Chen, S. H., Lin, C. J., Chao, T-S. & Hsu, C. C. H., 1 12月 1995, p. 40-43. 4 p.
研究成果: Paper › 同行評審
1 引文斯高帕斯（Scopus）

趙 天生

研究成果

搜尋結果

Microwave and RTA annealing of phos-doped, strained Si(100) and (110) implanted with molecular Carbon ions

Novel FD SOI devices structure for low standby power applications

High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide

Combination effects of nitrogen implantation at S/D extension and N 2 O oxide on 0.18 μm n- and p-MOSFETs

Process optimization for preventing boron-penetration using P or as co-implant in p-poly gate of P-MOSFETs

趙天生

Combination effects of nitrogen implantation at S/D extension and N ₂ O oxide on 0.18 μm n- and p-MOSFETs