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查看斯高帕斯 (Scopus) 概要
趙 天生
教授
理學院碩士在職專班
https://orcid.org/0000-0001-9618-207X
電話
03-5131367
電子郵件
tschao
nycu.edu
tw
h-index
h10-index
h5-index
3610
引文
28
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
804
引文
18
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
277
引文
9
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1990 …
2024
每年研究成果
概覽
指紋
網路
計畫
(24)
研究成果
(366)
獎項
(7)
類似的個人檔案
(6)
指紋
查看啟用 Tien-Sheng Chao 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Poly-Si
59%
Oxides
51%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
41%
High Performance
41%
Gate Dielectric
40%
MOSFET
36%
Polysilicon
32%
Electrical Characteristics
32%
Ultrathin
32%
HfO2
30%
Annealing
29%
Gate-all-around
28%
Low Temperature
28%
NMOSFET
27%
Subthreshold Swing
23%
Non-volatile Memory
22%
Silica
21%
Microwave Annealing
21%
Boron
20%
Gate Oxide
19%
Thin-film Transistors
18%
In Situ
17%
P-channel
17%
Nitrogen Ion Implantation
16%
Nitridation
16%
On-state Current
14%
Silicon Nitride
14%
N-channel
14%
Low-temperature Polycrystalline Silicon
14%
Gate Structure
14%
Junctionless FET
13%
Electrical Properties
13%
Field-effect Transistors
13%
Interfacial Layer
13%
Poly-Si Nanowire
13%
Junction-less
13%
Nitrided Oxide
12%
Threshold Voltage
12%
NH3 Plasma
12%
Deep Submicron
12%
Plasma Treatment
12%
Si(111)
12%
LTPS TFT
12%
3D IC
12%
Drive Current
12%
Nitrides
11%
Flash Memory
11%
P-type
11%
Select Gate
10%
Carbon Nanotube Field Effect Transistor (CNTFET)
10%
Material Science
Oxide Compound
100%
Silicon
68%
Dielectric Material
68%
Thin-Film Transistor
56%
Field Effect Transistor
53%
Metal-Oxide-Semiconductor Field-Effect Transistor
48%
Film
44%
Surface (Surface Science)
26%
Nanowire
26%
Density
26%
Annealing
25%
Transistor
24%
Electrical Property
23%
Capacitor
22%
Nitride Compound
20%
Boron
20%
Ferroelectric Material
19%
Hot Carrier
18%
Nitriding
17%
Capacitance
17%
Doping (Additives)
14%
Oxidation Reaction
14%
Silicon Nitride
13%
Electronic Circuit
12%
Lithography
12%
Thin Films
11%
Nanosheet
11%
Metal Oxide
10%
Permittivity
9%
Oxide Semiconductor
8%
Charge Trapping
8%
Zirconia
7%
Indium
7%
Monolayers
7%
Ion Implantation
7%
Silicate
6%
Ferroelectricity
6%
Carbon Nanotube
6%
X-Ray Photoelectron Spectroscopy
6%
Cobalt
6%
Oxynitride
6%
Type Metal
6%
Titanium Oxide
5%
Chemical Mechanical Planarization
5%
Complementary Metal-Oxide-Semiconductor Device
5%
Sol-Gel
5%
Thermal Stability
5%
Tetraethyl Orthosilicate
5%
Amorphous Silicon
5%
Spin Coating
5%
Engineering
Polysilicon
97%
Metal-Oxide-Semiconductor Field-Effect Transistor
53%
Thin-Film Transistor
38%
Low-Temperature
37%
Gate Oxide
33%
Field Effect Transistor
29%
Silicon Dioxide
21%
Gate Dielectric
21%
Field-Effect Transistor
20%
Inverter
13%
Plasma Treatment
13%
Nitride
13%
Dielectrics
12%
Engineering
12%
Interfacial Layer
12%
Electric Field
11%
Flash Memory
11%
Nonvolatile Memory
11%
Oxide Thickness
10%
Current Ratio
10%
Tunnel Construction
10%
Experimental Result
9%
Si Nanowires
9%
Nanosheet
9%
Passivation
9%
Nodes
8%
Semiconductor Device
8%
Gate Bias
8%
Gate Stack
8%
Capping Layer
8%
Rapid Thermal Annealing
8%
Thin Films
8%
Nanowire
7%
Si Substrate
7%
Interface Trap
7%
Metal Oxide Semiconductor
7%
Dopant Activation
7%
Gate Length
7%
Series Resistance
7%
Cell Operation
7%
Subthreshold Slope
6%
Lithography
6%
Side Wall
6%
Interface State
6%
Annealing Process
6%
Source Side Injection
6%
Dopants
6%
Silicon on Insulator
6%
Barrier Height
6%
Metal Gate
5%
