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查看斯高帕斯 (Scopus) 概要
趙 天生
教授
理學院碩士在職專班
https://orcid.org/0000-0001-9618-207X
電話
03-5131367
電子郵件
tschao
nycu.edu
tw
h-index
h10-index
h5-index
4078
引文
29
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
960
引文
18
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
374
引文
12
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1990 …
2026
每年研究成果
概覽
指紋
網路
計畫
(24)
研究成果
(382)
獎項
(7)
類似的個人檔案
(8)
指紋
查看啟用 Tien-Sheng Chao 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Material Science
Oxide Compound
100%
Dielectric Material
70%
Silicon
68%
Thin-Film Transistor
63%
Field Effect Transistor
58%
Film
46%
Metal-Oxide-Semiconductor Field-Effect Transistor
41%
Annealing
31%
Ferroelectric Material
31%
Transistor
28%
Nanowire
27%
Density
26%
Capacitor
24%
Zirconia
20%
Hot Carrier
20%
Nitride Compound
20%
Nitriding
18%
Electronic Circuit
18%
Capacitance
17%
Boron
17%
Oxide Thickness
15%
Silicon Nitride
15%
Electrical Property
15%
Doping (Additives)
14%
Nanocrystals
13%
Metal Oxide
13%
Superlattice
12%
Nanosheet
10%
Thin Films
10%
Oxide Semiconductor
10%
Permittivity
10%
Ferroelectricity
10%
Hydrogen
9%
Charge Trapping
9%
Indium
9%
Titanium Oxide
8%
Chemical Mechanical Planarization
8%
Thermal Stability
8%
Silicate
7%
Type Metal
7%
Ion Implantation
7%
Lithography
7%
X-Ray Photoelectron Spectroscopy
7%
Carbon Nanotube
6%
Cobalt
6%
Monolayers
6%
Oxynitride
6%
Zinc Oxide
5%
Forming Gas
5%
Ion Bombardment
5%
Keyphrases
Poly-Si
50%
Oxides
39%
High Performance
35%
HfO2
34%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
32%
MOSFET
30%
Ultrathin
30%
Polysilicon
29%
Gate Dielectric
28%
Electrical Characteristics
27%
Annealing
25%
Gate-all-around
24%
NMOSFET
22%
In Situ
21%
Subthreshold Swing
20%
Low Temperature
20%
Thin-film Transistors
18%
Boron
18%
Gate Oxide
16%
Junctionless Transistor
16%
Microwave Annealing
15%
Nitridation
14%
P-channel
13%
Plasma Treatment
13%
Silica
13%
Nitrogen Ion Implantation
12%
Interfacial Layer
12%
Zirconium Dioxide
12%
Junction-less
11%
NH3 Plasma
11%
Gate Structure
11%
Nitrides
11%
Field-effect Transistors
11%
Superlattice
11%
Deep Submicron
11%
Nitrided Oxide
11%
Select Gate
11%
HfZrO2
11%
Threshold Voltage
10%
Low-temperature Polycrystalline Silicon
10%
LTPS TFT
10%
On-state Current
10%
N-channel
10%
Drive Current
10%
Non-volatile Memory
10%
Self-aligned
10%
2-bit
9%
Silicon Nitride
9%
Electrical Properties
9%
3D IC
9%
Engineering
Polysilicon
71%
Thin film transistors
32%
Low-Temperature
31%
Gate Oxide
29%
Metal-Oxide-Semiconductor Field Effect Transistor (Mosfets)
19%
Transistor
16%
Metal-Oxide-Semiconductor Field-Effect Transistor
15%
Field Effect Transistor
15%
Gate Dielectric
14%
Inverter
13%
Nitrogen
12%
Silicon Dioxide
12%
Plasma Treatment
12%
Field-Effect Transistor
11%
Channel Length
10%
Oxide Thickness
9%
Si Nanowires
8%
Current Ratio
8%
Atomic Layer
8%
Experimental Result
8%
Interfacial Layer
7%
Nitride
6%
Nonvolatile Memory
6%
Lithography
6%
Capping Layer
6%
Interface Trap
6%
Tunnel Construction
6%
Electric Field
6%
Ion Implantation
6%
Nanosheet
5%
Rapid Thermal Annealing
5%
Superlattice
5%
Polycrystalline
5%
Gate Stack
5%
Gate Length
5%
Engineering
5%
Pretreatment
5%
Implant
5%
Dopants
5%
Dielectrics
5%
Si Substrate
5%
