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查看斯高帕斯 (Scopus) 概要
趙 天生
教授
理學院碩士在職專班
https://orcid.org/0000-0001-9618-207X
電話
03-5131367
電子郵件
tschao
nycu.edu
tw
h-index
h10-index
h5-index
3847
引文
28
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
984
引文
19
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
394
引文
11
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1990 …
2025
每年研究成果
概覽
指紋
網路
計畫
(24)
研究成果
(377)
獎項
(7)
類似的個人檔案
(7)
指紋
查看啟用 Tien-Sheng Chao 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Poly-Si
58%
Oxides
49%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
40%
High Performance
39%
Gate Dielectric
39%
Ultrathin
38%
HfO2
36%
MOSFET
34%
Polysilicon
31%
Electrical Characteristics
31%
Annealing
28%
Gate-all-around
28%
Low Temperature
27%
NMOSFET
26%
Subthreshold Swing
22%
Non-volatile Memory
22%
Silica
21%
In Situ
21%
Microwave Annealing
21%
Thin-film Transistors
20%
Boron
19%
Gate Oxide
18%
Junction-less
16%
P-channel
16%
Nitrogen Ion Implantation
16%
Interfacial Layer
15%
Nitridation
15%
Plasma Treatment
14%
On-state Current
14%
Silicon Nitride
14%
N-channel
14%
Low-temperature Polycrystalline Silicon
14%
Gate Structure
13%
Junctionless FET
13%
Electrical Properties
13%
Field-effect Transistors
13%
Poly-Si Nanowire
13%
NH3 Plasma
13%
Zirconium Dioxide
12%
Nitrided Oxide
12%
Threshold Voltage
12%
Deep Submicron
12%
Si(111)
11%
LTPS TFT
11%
3D IC
11%
Drive Current
11%
Nitrides
11%
Flash Memory
10%
P-type
10%
Select Gate
10%
Material Science
Oxide Compound
96%
Dielectric Material
66%
Silicon
64%
Thin-Film Transistor
59%
Field Effect Transistor
52%
Metal-Oxide-Semiconductor Field-Effect Transistor
47%
Film
42%
Transistor
26%
Surface (Surface Science)
25%
Nanowire
25%
Density
25%
Ferroelectric Material
24%
Annealing
23%
Electrical Property
22%
Capacitor
21%
Nitride Compound
19%
Boron
19%
Hot Carrier
17%
Nitriding
17%
Capacitance
16%
Zirconia
15%
Doping (Additives)
14%
Oxidation Reaction
13%
Silicon Nitride
13%
Electronic Circuit
12%
Lithography
12%
Thin Films
12%
Nanosheet
11%
Metal Oxide
10%
Indium
9%
Permittivity
9%
Superlattice
9%
Charge Trapping
8%
Titanium Oxide
8%
Oxide Semiconductor
8%
Ferroelectricity
7%
Monolayers
7%
Ion Implantation
7%
Thermal Stability
6%
Silicate
6%
Carbon Nanotube
6%
X-Ray Photoelectron Spectroscopy
6%
Cobalt
6%
Oxynitride
6%
Type Metal
5%
Oxide Film
5%
Zinc Oxide
5%
Chemical Mechanical Planarization
5%
Complementary Metal-Oxide-Semiconductor Device
5%
Sol-Gel
5%
Engineering
Polysilicon
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
51%
Thin-Film Transistor
42%
Low-Temperature
39%
Gate Oxide
32%
Field Effect Transistor
28%
Gate Dielectric
22%
Silicon Dioxide
20%
Field-Effect Transistor
19%
Interfacial Layer
15%
Plasma Treatment
14%
Inverter
13%
Nitride
13%
Dielectrics
12%
Nonvolatile Memory
12%
Engineering
11%
Electric Field
11%
Flash Memory
11%
Oxide Thickness
10%
Current Ratio
10%
Tunnel Construction
9%
Superlattice
9%
Experimental Result
9%
Si Nanowires
9%
Nanosheet
9%
Thin Films
8%
Passivation
8%
Gate Stack
8%
Nodes
8%
Semiconductor Device
8%
Gate Bias
8%
Channel Length
8%
Capping Layer
8%
Rapid Thermal Annealing
8%
Atomic Layer
7%
Nanowire
7%
Atomic Layer Deposition
7%
Si Substrate
7%
Annealing Process
7%
Interface Trap
7%
Metal Oxide Semiconductor
7%
Dopant Activation
7%
Gate Length
7%
Series Resistance
6%
Cell Operation
6%
Subthreshold Slope
6%
Lithography
6%
Side Wall
6%
Interface State
6%
Source Side Injection
6%
