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2014
On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors
Bakeroot, B., You, S., Wu, T.-L., Hu, J., Van Hove, M., De Jaeger, B., Geens, K., Stoffels, S. & Decoutere, S., 7 10月 2014, 於: Journal of Applied Physics. 116, 13, 134506.研究成果: Review article › 同行評審
開啟存取64 引文 斯高帕斯（Scopus）