薛 特

研究成果

每年研究成果 1993 2002 2003 2004 2005 2006 2009 2011 2013 2014 2015 2019 2021 2022

• 94 Article
• 4 Chapter
• 3 Review article
• 2 Conference contribution
• 6 更多
  • 2 Foreword/postscript
  • 2 Conference article
  • 1 Book
  • 1 Editorial

每年研究成果

每年研究成果

搜尋結果

• 1998

  Improved quality a-SiC: H films deposited by a combination of heated filament and rf plasma deposition technique

  Das, D., Chattopadhyay, S. & Barua, A. K., 1 2月 1998, 於: Solar Energy Materials and Solar Cells. 51, 1, p. 1-8 8 p.

  研究成果: Article › 同行評審

  • Plasma deposition 100%
  • Deposition Technique 65%
  • Filament 60%
  • Photoconductivity 37%
  • Plasma 37%

• Optoelectronic and structural properties of good quality hydrogenated amorphous silicon carbide films deposited by hot wire assisted RF plasma deposition technique

  Chattopadhyay, S., Das, D., Barua, A. K., Williamson, D. L. & Kshirsagar, S. T., 1998, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 37, 10, p. 5480-5484 5 p.

  研究成果: Article › 同行評審

  • Plasma deposition 100%
  • Amorphous silicon 82%
  • Optoelectronic devices 70%
  • Structural properties 65%
  • Silicon carbide 64%
  4 引文 斯高帕斯（Scopus）
• 1997

  Study of hydrogenated amorphous silicon films prepared at intermediate frequencies

  Chattopadhyay, S., 4月 1997, 於: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 75, 4, p. 587-602 16 p.

  研究成果: Article › 同行評審

  • Photoconductivity 100%
  • Amorphous silicon 91%
  • Amorphous Silicon 90%
  • intermediate frequencies 84%
  • silicon films 71%
• 1996

  Deposition of boron doped a-Si:H films by a novel combination of RF glow discharge technique and filament heating: Enhancement of doping efficiency

  Das, D., Sharma, S. N., Bhattacharyya, T. K., Chattopadhyay, S., Barua, A. K. & Banerjee, R., 3月 1996, 於: Solid State Communications. 97, 9, p. 769-776 8 p.

  研究成果: Article › 同行評審

  • Glow discharges 100%
  • Glow Discharge 80%
  • Boron 76%
  • Doping (additives) 75%
  • glow discharges 67%
  3 引文 斯高帕斯（Scopus）
• 1995

  Efficient boron incorporation in hydrogenated amorphous silicon films by a novel combination of rf glow discharge technique and heated filament

  Chattopadhyay, S., Das, D., Sharma, S. N., Barua, A. K. & Banerjee, R., 10月 1995, 於: Japanese journal of applied physics. 34, 10, p. 5743-5750 8 p.

  研究成果: Article › 同行評審

  • Glow discharges 100%
  • Amorphous silicon 92%
  • Boron 76%
  • silicon films 72%
  • glow discharges 67%
  8 引文 斯高帕斯（Scopus）

• Hydrogenated amorphous silicon films deposited at high growth rates by the cathode heating technique: properties and light induced degradation

  Chattopadhyay, S. & Banerjee, R., 1月 1995, 於: Solar Energy Materials and Solar Cells. 36, 1, p. 65-80 16 p.

  研究成果: Article › 同行評審

  • Amorphous silicon 100%
  • Amorphous Silicon 99%
  • Cathodes 72%
  • Plasmas 67%
  • Cathode 53%
  3 引文 斯高帕斯（Scopus）
• 1994

  Short-range order, microstructure and their correlation with light-induced degradation in hydrogenated amorphous silicon deposited at high growth rates by cathode heating technique

  Chattopadhyay, S., Sharma, S. N., Banerjee, R., Bhusari, D. M., Kshirsagar, S. T., Chen, Y. & Williamson, D. L., 1994, 於: Journal of Applied Physics. 76, 9, p. 5208-5213 6 p.

  研究成果: Article › 同行評審

  • amorphous silicon 100%
  • cathodes 87%
  • degradation 81%
  • heating 68%
  • microstructure 63%
  14 引文 斯高帕斯（Scopus）
• 1993

  Control of powder formation in silane discharge by cathode heating and hydrogen dilution for high-rate deposition of hydrogenated amorphous silicon thin films

  Banerjee, R., Sharma, S. N., Chattopadhyay, S., Batabyal, A. K. & Barua, A. K., 1993, 於: Journal of Applied Physics. 74, 7, p. 4540-4545 6 p.

  研究成果: Article › 同行評審

  • silanes 100%
  • dilution 91%
  • amorphous silicon 84%
  • cathodes 73%
  • heating 57%
  10 引文 斯高帕斯（Scopus）

• Hydrogenated amorphous silicon films prepared at high substrate temperature: Properties and light induced degradation

  Banerjee, R., Ghosh, S., Chattopadhyay, S., Bandyopadhyay, A. K., Chaudhuri, P., Batabyal, A. K. & Barua, A. K., 1993, 於: Journal of Applied Physics. 73, 11, p. 7435-7440 6 p.

  研究成果: Article › 同行評審

  • silicon films 100%
  • amorphous silicon 86%
  • degradation 70%
  • annealing 37%
  • defects 34%
  8 引文 斯高帕斯（Scopus）