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國立陽明交通大學研發優勢分析平台 首頁
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查看斯高帕斯 (Scopus) 概要
葉 勝玄
副教授
國際半導體產業學院
新世代功能性物質研究中心
https://orcid.org/0000-0002-4459-1573
h-index
h10-index
h5-index
261
引文
10
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
166
引文
7
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
76
引文
5
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2005
2026
每年研究成果
概覽
指紋
網路
計畫
(3)
研究成果
(28)
類似的個人檔案
(6)
指紋
查看啟用 Sheng-Shiuan Yeh 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
CoSi2
64%
Low Temperature
53%
Noise Level
49%
Low-frequency Noise
46%
IrO2
42%
Graphene
42%
Heterostructure
42%
Impurities
42%
Grain Boundary
32%
Two-level System
28%
Nanodevices
28%
Two-channel Kondo Effect
28%
Nanowires
28%
Conductance
28%
Quantum Interference
28%
Thermally Activated Processes
25%
Avalanche Breakdown
21%
SiC Power MOSFET
21%
Reverse Turns
21%
Turn-on Voltage
21%
TiSi2
21%
Ultra-low
21%
Wigner Solid
21%
Liquid Helium
21%
RuO2
21%
Dirac Nodal Line
21%
Mobility Fluctuation
21%
AlOx
21%
Granular Arrays
21%
Electrical Transport
21%
Two-dimensional Transistors
21%
CdTe Quantum Dots
21%
Noise Processes
21%
Surface Plasmon Resonance
21%
Ultrathin
21%
Indium Oxide Thin Films
21%
Scatterer
21%
Nanocrystalline
21%
Triplet Superconductivity
21%
Hard Switching
21%
Recoupling
21%
Transparent Conducting
21%
Defect Motion
21%
Positive Shift
21%
Granular Effect
21%
Third Quadrant Operation
21%
Tin-doped Indium Oxide
21%
Mesoscopic Josephson Junction
21%
Indium Tin Oxide Film
21%
Transistor
21%
Material Science
Film
80%
Nanowire
71%
Metal-Oxide-Semiconductor Field-Effect Transistor
64%
Density
63%
Silicon
57%
Electrical Resistivity
53%
Heterojunction
53%
Oxygen Vacancy
53%
Electronic Circuit
49%
Carrier Concentration
42%
Nanocrystalline
42%
Cobalt
42%
Thin Films
37%
Oxide Compound
35%
Nanostructure
32%
Nanodevice
32%
Atomic Defect
28%
Charge Carrier
26%
Superconductivity
26%
Carrier Mobility
24%
Graphene
21%
Transistor
21%
Indium
21%
Metal Film
21%
Oxide Film
21%
High-Temperature Superconductivity
21%
Tin
21%
Superconducting Material
21%
Thick Films
21%
Hall Effect
21%
Silicon Substrate
21%
Transmission Electron Microscopy
16%
Magnetoresistance
12%
Nanocrystallites
10%
Grain Boundary
10%
Aluminum
10%
Nanostructured Material
10%
Strip Metal
10%
Volume Fraction
10%
Helium
10%
Anode
10%
Elevated Temperature
10%
Electrical Breakdown
10%
Two-Dimensional Material
9%
Ruthenium
7%
Structural Dynamics
7%
High-Resolution Transmission Electron Microscopy
7%
Grain Size
7%
Sensor System
7%
Electronic Property
5%
Physics
Conductance
100%
Graphene
64%
Kondo Effect
64%
Liquid Helium
56%
Oxide Film
42%
Oxygen Vacancy
42%
Avalanche
42%
Field Effect Transistor
42%
Density of States
35%
Electric Field
35%
Nanowire
35%
Phonon
32%
Grain Boundary
26%
Noise Measurement
26%
Physics
24%
Tunnel Junction
24%
Superconductivity
21%
Transport Property
21%
Thin Films
21%
Indium Oxides
21%
Nanocrystalline
21%
Indium
21%
Electron Density
21%
Mesoscopic Physics
21%
Microwave Transmission
21%
Charge Transfer
21%
Surface Wave
21%
Melting Point
21%
Microwave Resonance
21%
Q Factor
21%
Quasiparticle
21%
Transmission Line
21%
Molecular Beam Epitaxy
21%
Transportation
21%
Heat Transfer
21%
Quantum Interference
21%
Oxide
21%
Magnetic Field
17%
Grain Size
14%
Impact Ionization
14%
Threshold Voltage
14%
Low Noise
10%
Electron Energy
10%
Photoirradiation
10%
Temperature Dependence
10%
Monte Carlo Method
10%
Electron Phonon Interactions
10%
Display Devices
10%
Electrostatics
10%
Crystal
10%
