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查看斯高帕斯 (Scopus) 概要
葉 勝玄
助理教授
國際半導體產業學院
新世代功能性物質研究中心
https://orcid.org/0000-0002-4459-1573
電話
+886-3-5712121#55920
電子郵件
ssyeh
nycu.edu
tw
網站
https://sites.google.com/view/low-d-electron/home
h-index
h10-index
h5-index
206
引文
10
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
117
引文
6
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
63
引文
4
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2005
2024
每年研究成果
概覽
指紋
網路
計畫
(3)
研究成果
(24)
類似的個人檔案
(4)
指紋
查看啟用 Sheng-Shiuan Yeh 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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重量
按字母排序
Keyphrases
CoSi2
100%
Low Temperature
66%
IrO2
60%
Wigner Solid
60%
Graphene
60%
Liquid Helium
50%
Nanodevices
46%
Two-channel Kondo Effect
46%
RuO2
46%
Low-frequency Noise
43%
Dirac Nodal Line
40%
Quasi-one-dimensional
40%
Electron Systems
40%
Heterostructure
40%
Impurities
40%
Mobility Fluctuation
40%
Law
36%
Nanowires
36%
Transport Properties
33%
Oxygen Vacancy
33%
AlOx
30%
Tunnel Junction
30%
Density of States
30%
Granular Arrays
30%
Ultra-low
29%
Non-magnetic
29%
TiSi2
28%
Noise Level
26%
Differential Conductance
26%
Conductance
26%
Grain Boundary
26%
Quantum Interference
26%
Electronic Properties
26%
Disilicide
26%
Cobalt
26%
Coulomb Scattering
25%
Scattering Center
25%
Two-channel
23%
Electronic Conduction
22%
Capacitance Value
20%
Low-temperature Technologies
20%
Electrical Transport
20%
Mesoscopic
20%
Two-dimensional Transistors
20%
Indium Oxide Thin Films
20%
Scatterer
20%
Transparent Conducting
20%
Defect Motion
20%
Tin-doped Indium Oxide
20%
CdTe Quantum Dots
20%
Material Science
Film
91%
Graphene
60%
Silicon
60%
Density
59%
Electrical Resistivity
50%
Nanodevice
50%
Nanowire
46%
Carrier Concentration
40%
Thin Films
40%
Oxide Film
40%
Electronic Circuit
40%
Nanocrystalline
40%
Cobalt
40%
Surface (Surface Science)
36%
Nanostructure
30%
Grain Boundary
30%
Oxygen Vacancy
30%
Heterojunction
30%
Charge Carrier
30%
Atomic Defect
26%
Carrier Mobility
22%
Transmission Electron Microscopy
20%
Transistor
20%
Oxide Compound
20%
Indium Tin Oxide
20%
Indium
20%
Metal Film
20%
High-Temperature Superconductivity
20%
Capacitance
20%
Tin
20%
Josephson Junction
20%
Superconducting Material
20%
Thick Films
20%
Aluminum
16%
Grain Size
13%
Nanocrystallites
10%
Nanostructured Material
10%
Electronic Property
10%
Strip Metal
10%
Conductor
10%
Volume Fraction
10%
Display Device
10%
Two-Dimensional Material
9%
Ruthenium
6%
Structural Dynamics
6%
High-Resolution Transmission Electron Microscopy
6%
Current Voltage Characteristics
6%
Annealing
6%
Device Fabrication
5%
Quantum Device
5%
Physics
Liquid Helium
70%
Phonon
50%
Tunnel Junction
40%
Graphene
40%
Oxide Film
40%
Kondo Effect
40%
Heterojunctions
40%
Quantum Dot
40%
Physics
36%
Oxygen Vacancy
30%
Low Noise
30%
Superconductivity
30%
Grain Boundary
30%
Transport Property
27%
Quantum Computing
26%
Integrated Circuit
26%
Nanomaterial
26%
Nanowire
26%
Transmission Electron Microscopy
24%
Thin Films
24%
Refractivity
20%
Temperature Characteristics
20%
Thick Films
20%
Indium Oxides
20%
Surface Plasmon Resonance
20%
Nanocrystalline
20%
Surface Plasmon
20%
Indium
20%
Electron Density
20%
Permittivity
20%
Noise Measurement
20%
Mesoscopic Physics
20%
Density of States
20%
Atomic Defect
20%
High Resolution
20%
Photoelectric Emission
20%
Microwave Transmission
20%
Charge Transfer
20%
Surface Wave
20%
Melting Point
20%
Microwave Resonance
20%
Q Factor
20%
Quasiparticle
20%
Transmission Line
20%
Josephson Junction
20%
Magnetic Field
16%
Magnetoresistance
16%
Electron Scattering
13%
Electron Energy
10%
Deep Learning Method
10%
