Seiji Samukawa – 研究成果 — 國立陽明交通大學研發優勢分析平台

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每年研究成果

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263 Article
76 Conference contribution
14 Conference article
8 Chapter
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5結果

篩選

2018
Neutral beam technology for damage-free etching processes
Samukawa, S., 2018.
研究成果: Paper › 同行評審
2004
High-performance and damage-free neutral beam etching for advanced ULSI devices
Samukawa, S., 2004, p. 542-547. 6 p.
研究成果: Paper › 同行評審
1999
Pulse-time-modulated plasma etching for high performance polysilicon patterning on thin gate oxides
Ohtake, H., Samukawa, S., Noguchi, K., Iida, H., Sato, A. & Qian, X. Y., 1999, p. 37-40. 4 p.
研究成果: Paper › 同行評審
3 引文斯高帕斯（Scopus）
1998
Suppression of topography-dependent charging damage to MOS devices using pulse-time-modulated plasma
Noguchi, K., Ohtake, H., Samukawa, S. & Horiuchi, T., 1998, p. 176-179. 4 p.
研究成果: Paper › 同行評審
1990
Perfect selective highly anisotropic, and high rate ECR plasma etching for N⁺ poly-Si and WSi_x/poly-Si
Samukawa, S., 1990, p. 207-210. 4 p.
研究成果: Paper › 同行評審