Po-Tsun Liu

2022

Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes

Liang, Y. K., Lin, J. W., Huang, Y. S., Lin, W. C., Young, B. F., Shih, Y. C., Lu, C. C., Yeong, S. H., Lin, Y. M., Liu, P. T., Chang, E. Y. & Lin, C. H., 5月 2022, 於: ECS Journal of Solid State Science and Technology. 11, 5, 053012.

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1 引文斯高帕斯（Scopus）

Extraction Method for Equivalent Oxide Thickness of a Thin High-κ Gate Insulator and Estimation of Field-Effect Mobility in Amorphous Oxide Semiconductor Nano-Sheet Junctionless Transistors

Kuo, P. Y., Li, Z. H., Chang, C. M. & Liu, P. T., 1 9月 2022, 於: IEEE Transactions on Electron Devices. 69, 9, p. 4791-4795 5 p.

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Gate dielectric material and process effects on distribution pattern of nano-resistors in solid-state incandescent light emitting devices

Su, J. Q., Kuo, Y. & Liu, P. T., 5月 2022, 於: MRS Advances. 7, 15, p. 301-304 4 p.

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Investigation of deposition technique and thickness effect of HfO₂ film in bilayer InWZnO-based conductive bridge random access memory

Hsu, C. C., Liu, P. T., Gan, K. J., Ruan, D. B. & Sze, S. M., 7月 2022, 於: Vacuum. 201, 111123.

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Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment

Ruan, D. B., Chang-Liao, K. S., Liu, C. W., Lee, Y. J., Chien, Y. H., Kuo, B. L., Chiu, Y. C., Gan, K. J., Hsu, C. C. & Liu, P. T., 1 6月 2022, 於: Ieee Electron Device Letters. 43, 6, p. 838-841 4 p.

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Radiation hardness of InWZnO thin film as resistive switching layer

Hsu, C. C., Ruan, D. B., Liao, K. S. C., Gan, K. J., Sze, S. M. & Liu, P. T., 9 5月 2022, 於: Applied Physics Letters. 120, 19, 191605.

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2 引文斯高帕斯（Scopus）

Vertical channel metal-oxide clusters as sensitive NO₂ sensor with modulated response at room temperature

Huang, T. H., Li, P. Y., Yang, J. B., Liu, T. Y., Chen, M. H., Liu, P-T., Meng, H-F., Lu, C. J., Soppera, O., Yeh, P. H. & Zan, H-W., 1 3月 2022, 於: Sensors and Actuators, B: Chemical. 354, p. 1-10 10 p., 131222.

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1 引文斯高帕斯（Scopus）

2021

Adjusting oxygen vacancy and resistance switching of InWZnO thin films by high-pressure oxidation technique

Gan, K. J., Liu, P. T., Hsu, C. C., Ruan, D. B. & Sze, S. M., 25 10月 2021, 於: Applied Physics Letters. 119, 17, 171601.

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1 引文斯高帕斯（Scopus）

Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory

Gan, K-J., Liu, P-T., Ruan, D-B., Hsu, C-C., Chiu, Y-C. & Sze, S. M., 15 1月 2021, 於: Nanotechnology. 32, 3, 6 p., 035203.

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3 引文斯高帕斯（Scopus）

Enhanced Electrical Characteristics of Ge nMOSFET by Supercritical Fluid CO₂Treatment with H₂O₂Cosolvent

Ruan, D. B., Chang-Liao, K. S., Liu, G. T., Chiu, Y. C., Gan, K. J. & Liu, P. T., 5月 2021, 於: Ieee Electron Device Letters. 42, 5, p. 645-648 4 p., 9383307.

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6 引文斯高帕斯（Scopus）

Enhanced reliability and uniformity for Ge pMOSFET with low temperature supercritical fluid treatment

Ruan, D. B., Chang-Liao, K. S., Li, J. S., Kuo, B. L., Hong, Z. Q., Liu, G. T. & Liu, P. T., 15 10月 2021, 於: Surface and Coatings Technology. 423, 127632.

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1 引文斯高帕斯（Scopus）

Impact of annealing environment on performance of InWZnO conductive bridge random access memory

Hsu, C. C., Liu, P. T., Gan, K. J., Ruan, D. B., Chiu, Y. C. & Sze, S. M., 9月 2021, 於: Vacuum. 191, 110321.

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6 引文斯高帕斯（Scopus）

Impact of O₂ plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory

Hsu, C. C., Liu, P. T., Gan, K. J., Ruan, D. B., Chiu, Y. C. & Sze, S. M., 25 9月 2021, 於: Surface and Coatings Technology. 422, 127539.

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3 引文斯高帕斯（Scopus）

Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation

Ruan, D. B., Liu, P. T., Gan, K. J., Hsu, C. C., Chiu, Y. C., Lin, C. Y. & Sze, S. M., 6 12月 2021, 於: Applied Physics Letters. 119, 23, 231602.

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1 引文斯高帕斯（Scopus）

Numerical analysis of oxygen-related defects in amorphous in-w-o nanosheet thin-film transistor

Fan, W. T., Liu, P. T., Kuo, P. Y., Chang, C. M., Liu, I. H. & Kuo, Y., 11月 2021, 於: Nanomaterials. 11, 11, 3070.

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3 引文斯高帕斯（Scopus）

Oxygen concentration effect on conductive bridge random access memory of InWZnO thin film

Hsu, C. C., Liu, P. T., Gan, K. J., Ruan, D. B. & Sze, S. M., 9月 2021, 於: Nanomaterials. 11, 9, 2204.

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1 引文斯高帕斯（Scopus）

Strategy of Mitigating Breakdown Interference and Yield Loss in Crossbar Memory

Chang, C. C., Wang, I. T., Huang, H. H., Hudec, B., Wu, M. H., Chang, C. C., Liu, P. T. & Hou, T. H., 1 12月 2021, 於: IEEE Transactions on Electron Devices. 68, 12, p. 6082-6086 5 p.

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2020

Annealing effects on resistive switching of IGZO-based CBRAM devices

Gan, K. J., Liu, P. T., Ruan, D. B., Chiu, Y. C. & Sze, S. M., 10月 2020, 於: Vacuum. 180, 109630.

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8 引文斯高帕斯（Scopus）

Asymmetric Low Metal Contamination Ni-Induced Lateral Crystallization Polycrystalline-Silicon Thin-Film Transistors with Low OFF-State Currents for Back-End of Line (BEOL) Compatible Devices Applications

Kuo, P. Y., Lo, S. C., Wei, H. H. & Liu, P. T., 2020, 於: IEEE Journal of the Electron Devices Society. 8, p. 1317-1322 6 p., 9223692.

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1 引文斯高帕斯（Scopus）

Effect of Annealing Treatment on Performance of Ga₂O₃ Conductive-Bridging Random-Access Memory

Gan, K. J., Liu, P. T., Ruan, D. B., Hsu, C. C., Chiu, Y. C. & Sze, S. M., 1 1月 2020, (Accepted/In press) 於: Journal of Electronic Materials.

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7 引文斯高帕斯（Scopus）

High Performance Transparent a-IGZO Thin Film Transistors with ALD-HfO₂Gate Insulator on Colorless Polyimide Substrate

Yu, M. C., Ruan, D. B., Liu, P-T., Chien, T. C., Chiu, Y. C., Gan, K. J. & Sze, S. M., 29 6月 2020, 於: IEEE Transactions on Nanotechnology. 19, p. 481-485 5 p., 9127827.

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17 引文斯高帕斯（Scopus）

High-reliability gate driver on array using noise sharing of precharging node for thin film transistor-liquid crystal display application

Zheng, G-T., Liu, P-T., Du, C-H. & Wang, T-Y., 27 7月 2020, (E-pub ahead of print) 於: Journal of the Society for Information Display. 14 p.

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1 引文斯高帕斯（Scopus）

Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology

Ruan, D. B., Liu, P-T., Gan, K. J., Chiu, Y. C., Hsu, C. C. & Sze, S. M., 4 5月 2020, 於: Applied Physics Letters. 116, 18, 4 p., 182104.

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19 引文斯高帕斯（Scopus）

2019

Bipolar resistive switching characteristics of tungsten-doped indium–zinc oxide conductive-bridging random access memory

Gan, K. J., Liu, P-T., Lin, S. J., Ruan, D. B., Chien, T. C., Chiu, Y. C. & Sze, S. M., 1 8月 2019, 於: Vacuum. 166, p. 226-230 5 p.

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18 引文斯高帕斯（Scopus）

Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Gan, K. J., Liu, P. T., Chien, T. C., Ruan, D. B. & Sze, S. M., 1 12月 2019, 於: Scientific reports. 9, 1, 14141.

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27 引文斯高帕斯（Scopus）

Investigation of resistive switching in copper/InGaZnO/Al₂O₃-based memristor

Gan, K. J., Chang, W. C., Liu, P-T. & Sze, S. M., 30 9月 2019, 於: Applied Physics Letters. 115, 14, 5 p., 143501.

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22 引文斯高帕斯（Scopus）

Multioutputs single-stage gate driver on array with wide temperature operable thin-film-transistor liquid-crystal display for high resolution application

Liu, P-T., Zheng, G. T. & Lin, Y. C., 1月 2019, 於: Journal of the Society for Information Display. 27, 1, p. 21-33 13 p.

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3 引文斯高帕斯（Scopus）

Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems

Ruan, D. B., Liu, P-T., Yu, M. C., Chien, T. C., Chiu, Y. C., Gan, K. J. & Sze, S. M., 3 6月 2019, 於: ACS Applied Materials and Interfaces. 11, 25, p. 22521-22530 10 p.

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22 引文斯高帕斯（Scopus）

Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors

Ruan, D. B., Liu, P-T., Chen, Y. H., Chiu, Y. C., Chien, T. C., Yu, M. C., Gan, K. J. & Sze, S. M., 3月 2019, 於: Advanced Electronic Materials. 5, 3, 1800824.

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22 引文斯高帕斯（Scopus）

Two-Dimensional-Like Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Low Operation Voltage

Kuo, P. Y., Chang, C. M., Liu, I. H. & Liu, P-T., 20 5月 2019, 於: Scientific reports. 9, 1, 7 p., 7579.

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7 引文斯高帕斯（Scopus）

2018

Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stack

Ruan, D. B., Liu, P-T., Chiu, Y. C., Kuo, P. Y., Yu, M. C., Kan, K. Z., Chien, T. C., Chen, Y. H. & Sze, S. M., 30 8月 2018, 於: Thin Solid Films. 660, p. 578-584 7 p.

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16 引文斯高帕斯（Scopus）

Effects of backchannel passivation on electrical behavior of hetero-stacked A-IWO/IgZO thin film transistors

Liu, P. T., Chang, C. H., Kuo, P. Y. & Chen, P. W., 1月 2018, 於: ECS Journal of Solid State Science and Technology. 7, 3, p. Q17-Q20

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Electrical performance and stability of tungsten indium zinc oxide thin-film transistors

Chauhan, R. N., Tiwari, N., Shieh, H. P. D. & Liu, P-T., 1 3月 2018, 於: Materials Letters. 214, p. 293-296 4 p.

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10 引文斯高帕斯（Scopus）

Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

Lin, D., Pi, S., Yang, J., Tiwari, N., Ren, J., Zhang, Q., Liu, P-T. & Shieh, H. P., 6月 2018, 於: Semiconductor Science and Technology. 33, 6, 065001.

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9 引文斯高帕斯（Scopus）

Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture

Liu, P-T., Ruan, D. B., Yeh, X. Y., Chiu, Y. C., Zheng, G. T. & Sze, S. M., 1 12月 2018, 於: Scientific reports. 8, 1, 8153.

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29 引文斯高帕斯（Scopus）

Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition

Ruan, D. B., Liu, P-T., Chiu, Y. C., Kan, K. Z., Yu, M. C., Chien, T. C., Chen, Y. H., Kuo, P. Y. & Sze, S. M., 30 8月 2018, 於: Thin Solid Films. 660, p. 885-890 6 p.

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18 引文斯高帕斯（Scopus）

Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

Ruan, D. B., Liu, P-T., Chiu, Y. C., Kuo, P. Y., Yu, M. C., Gan, K. J., Chien, T. C. & Sze, S. M., 1 1月 2018, 於: RSC Advances. 8, 13, p. 6925-6930 6 p.

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21 引文斯高帕斯（Scopus）

Performance improvements of tungsten and zinc doped indium oxide thin film transistor by fluorine based double plasma treatment with a high-K gate dielectric

Ruan, D. B., Liu, P-T., Chiu, Y. C., Yu, M. C., Gan, K. J., Chien, T. C., Chen, Y. H., Kuo, P. Y. & Sze, S. M., 1 11月 2018, 於: Thin Solid Films. 665, p. 117-122 6 p.

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11 引文斯高帕斯（Scopus）

Solving the integration problem of one transistor one memristor architecture with a Bi-layer IGZO film through synchronous process

Chang, C. C., Liu, P-T., Chien, C. Y. & Fan, Y. S., 23 4月 2018, 於: Applied Physics Letters. 112, 17, 172101.

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19 引文斯高帕斯（Scopus）

TAOS based Cu/TiW/IGZO/Ga₂O₃/Pt bilayer CBRAM for low-power display technology

Gan, K. J., Liu, P-T., Chiu, Y. C., Ruan, D. B., Chien, T. C. & Sze, S. M., 25 11月 2018, 於: Surface and Coatings Technology. 354, p. 169-174 6 p.

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20 引文斯高帕斯（Scopus）

The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors

Fu, R., Yang, J., Chang, W. C., Chang, W. C., Chang, C. M., Lin, D., Zhang, Q., Liu, P-T. & Shieh, H. P. D., 21 3月 2018, 於: Physica Status Solidi (A) Applications and Materials Science. 215, 6, 1700785.

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9 引文斯高帕斯（Scopus）

The influence on electrical characteristics of amorphous indium tungsten oxide thin film transistors with multi-stacked active layer structure

Ruan, D. B., Liu, P-T., Gan, K. J., Chiu, Y. C., Yu, M. C., Chien, T. C., Chen, Y. H., Kuo, P. Y. & Sze, S. M., 30 11月 2018, 於: Thin Solid Films. 666, p. 94-99 6 p.

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11 引文斯高帕斯（Scopus）

2017

Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions

Qu, M., Chang, C. H., Meng, T., Zhang, Q., Liu, P-T. & Shieh, H. P. D., 2月 2017, 於: Physica Status Solidi (A) Applications and Materials Science. 214, 2, 4 p., 1600465.

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13 引文斯高帕斯（Scopus）

Thickness-dependent magnetotransport properties and terahertz response of topological insulator Bi₂Te₃thin films

Le, P. H., Liu, P-T., Luo, C-W., Lin, J-Y. & Wu, K-H., 25 1月 2017, 於: Journal of Alloys and Compounds. 692, p. 972-979 8 p.

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23 引文斯高帕斯（Scopus）

2016

Design of dual-outputs-single-stage a-Si:H TFT gate driver for high resolution TFT-LCD application

Zheng, G. T., Liu, P-T. & Wu, M. C., 5月 2016, 於: Journal of the Society for Information Display. 24, 5, p. 330-337 8 p.

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4 引文斯高帕斯（Scopus）

Effects of nitrogen on amorphous nitrogenated InGaZnO (a-IGZO:N) thin film transistors

Liu, P-T., Chang, C. H., Fuh, C. S., Liao, Y. T. & Sze, S. M., 10月 2016, 於: Journal of Display Technology. 12, 10, p. 1070-1077 8 p., 7500061.

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20 引文斯高帕斯（Scopus）

Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors

Liu, P-T., Chang, C. H. & Fuh, C. S., 1 1月 2016, 於: RSC Advances. 6, 108, p. 106374-106379 6 p.

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33 引文斯高帕斯（Scopus）

Modification of intrinsic defects in IZO/IGZO thin films for reliable bilayer thin film transistors

Tiwari, N., Chauhan, R. N., Liu, P-T. & Shieh, H. P. D., 1 1月 2016, 於: RSC Advances. 6, 79, p. 75393-75398 6 p.

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12 引文斯高帕斯（Scopus）

Photoluminescence and Reliability Study of ZnO Cosputtered IGZO Thin-Film Transistors under Various Ambient Conditions

Tiwari, N., Chauhan, R. N., Shieh, H. P. D., Liu, P-T. & Huang, Y-P., 4月 2016, 於: IEEE Transactions on Electron Devices. 63, 4, p. 1578-1581 4 p., 7416615.

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12 引文斯高帕斯（Scopus）

Reduced parasitic contact resistance and highly stable operation in a-In-Ga-Zn-O thin-film transistors with microwave treatment

Liu, P-T., Chang, C. H., Zheng, G. T., Fuh, C. S., Teng, L. F., Wu, M. C. & Lee, Y. J., 30 11月 2016, 於: Thin Solid Films. 619, p. 148-152 5 p.

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2 引文斯高帕斯（Scopus）

劉 柏村

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劉柏村