劉 柏村

研究成果

每年研究成果 1996 2004 2005 2006 2007 2013 2014 2015 2018 2022

• 246 Article
• 69 Conference contribution
• 31 Patent
• 29 Conference article
• 14 更多
  • 10 Paper
  • 3 Comment/debate
  • 1 Chapter

每年研究成果

每年研究成果

搜尋結果

• 2010

  Characteristics imrovement for flexible a-Si:H thin film transistor with post treatment processes

  Teng, L. F., Liu, P-T., Chou, Y. T. & Fan, Y. S., 1 12月 2010, p. 2207-2209. 3 p.

  研究成果: Paper › 同行評審

  • Thin film transistors 100%
  • Passivation 94%
  • Silicon nitride 47%
  • Metal foil 42%
  • Annealing 38%

• The polarity bias control of indium zinc oxide thin film transistor for gas sensor application

  Teng, L. F., Liu, P-T., Chou, Y. T. & Fan, Y. S., 1 12月 2010, p. 253-255. 3 p.

  研究成果: Paper › 同行評審

  • Zinc oxide 100%
  • Indium 97%
  • Thin film transistors 96%
  • Oxide films 93%
  • Chemical sensors 85%

• Transportation model establishment of InGaZnO for thin film transistor device application

  Teng, L. F., Liu, P-T., Chou, Y. T. & Fan, Y. S., 1 12月 2010, p. 1845-1847. 3 p.

  研究成果: Paper › 同行評審

  • Oxygen vacancies 100%
  • Thin film transistors 82%
  • Annealing 64%
  • Vacuum 57%
  1 引文 斯高帕斯（Scopus）
• 2009

  Amorphous indium Gallium Zinc oxide thin film transistors with different source/drain electrodes

  Wu, G. M., Chu, Y. S., Chou, Y. T., Shieh, H. P. D., Teng, L. F., Liu, P-T., Mo, C. N., Chiang, M. T. & Li, H. A., 1 12月 2009.

  研究成果: Paper › 同行評審

  • Gallium 100%
  • Zinc oxide 93%
  • Indium 91%
  • Thin film transistors 89%
  • Oxide films 87%

• Amorphous Indium Gallium Zinc Oxide thin film transistors with interface modification layer

  Wu, G. M., Chu, Y. S., Chou, Y. T., Shieh, H. P. D., Teng, L. F., Liu, P-T., Mo, C. N., Chiang, M. T. & Li, H. A., 1 12月 2009.

  研究成果: Paper › 同行評審

  • Gallium 100%
  • Zinc oxide 93%
  • Indium 91%
  • Thin film transistors 89%
  • Oxide films 87%

• Novel electroless copper plating as gate electrodes for a-TFTs AMLCD application

  Su, C. Y., Chou, Y. T., Liu, P-T. & Chen, H. M., 1 12月 2009.

  研究成果: Paper › 同行評審

  • Copper plating 100%
  • Amorphous silicon 91%
  • Electroless plating 90%
  • Thin film transistors 85%
  • Copper 54%
• 2006

  A novel threshold voltage compensation pixel circuit with high immunity to the supply voltage drop for AMOLED displays

  Lu, H. Y., Liu, P-T., Chang, T. C. & Chi, S., 12月 2006, p. 833-835. 3 p.

  研究成果: Paper › 同行評審

  • immunity 100%
  • Threshold voltage 93%
  • threshold voltage 80%
  • Drop 73%
  • Immunity 70%

• Application of supercritical fluids for amorphous silicon thin film transistors

  Tsai, C. T., Chang, T. C., Liu, P-T. & Yang, P. Y., 12月 2006, p. 479-480. 2 p.

  研究成果: Paper › 同行評審

  • Supercritical fluids 100%
  • Amorphous silicon 98%
  • Amorphous Silicon 98%
  • supercritical fluids 93%
  • Thin film transistors 92%

• The mechanisms of on/off currents for the dual-gate a-Si:H thin film transistors with various length sizes of indium-tin-oxide top gate

  Liang, C. Y., Chang, T. C., Liu, P-T., Gan, F. Y. & Yeh, F. S., 1 12月 2006, p. 1663-1666. 4 p.

  研究成果: Paper › 同行評審

  • indium tin oxide 100%
  • Tin oxides 75%
  • Indium 71%
  • Thin film transistors 70%
  • Lighting 61%
  1 引文 斯高帕斯（Scopus）
• 1996

  TE-wave image reconstruction by genetic algorithm

  Chiu, C. C. & Liu, P-T., 1 12月 1996, p. 92-94. 3 p.

  研究成果: Paper › 同行評審

  • genetic algorithms 100%
  • image reconstruction 92%
  • Image reconstruction 91%
  • Genetic algorithms 62%
  • calculus 50%
  1 引文 斯高帕斯（Scopus）