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查看斯高帕斯 (Scopus) 概要
李 佩雯
教授
電機工程學系
h-index
h10-index
h5-index
1642
引文
22
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
361
引文
11
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
83
引文
6
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1992 …
2026
每年研究成果
概覽
指紋
網路
計畫
(25)
研究成果
(194)
獎項
(1)
類似的個人檔案
(6)
指紋
查看啟用 Pei-Wen Li 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
Germanium Quantum Dots
93%
SiGe
36%
Silica
35%
Silicon Nitride
27%
Germanium
18%
Single Hole Transistor
17%
Quantum Dots
15%
Thermal Oxidation
15%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
15%
Poly-Si
14%
Room Temperature
14%
Self-aligned
14%
Gate Stack
13%
Thin-film Transistors
12%
Ge Dot
12%
Tunneling Current
11%
Transistor
11%
High Performance
11%
Polysilicon
11%
Phototransistor
11%
Si1-xGex
10%
Amorphous InGaZnO (a-IGZO)
10%
Selective Oxidation
10%
Heterostructure
10%
Double Quantum Dot
9%
MOSFET
9%
Gallium Arsenide
9%
Self-aligned Electrodes
9%
T-shaped Gate
9%
Film Profile Engineering
9%
Single Electron Transistor
9%
Tunable Size
9%
SiGe Channel
8%
Insulator
8%
Nanospheres
8%
Quantum Dot Arrays
8%
Gate-all-around
8%
Gate Oxide
8%
Channel Length
7%
Si Photonics
7%
Si Substrate
7%
Poly-SiGe
7%
Electronic Devices
7%
PMOSFET
7%
Charge Transport
6%
Electrical Properties
6%
Film Profile
6%
ZnON
6%
Random Telegraph Noise
6%
Lightly Doped Drain
6%
Material Science
Quantum Dot
100%
Germanium
57%
Transistor
43%
Thin-Film Transistor
32%
Silicon Nitride
28%
Oxidation Reaction
27%
Heterojunction
20%
Oxide Compound
19%
Metal-Oxide-Semiconductor Field-Effect Transistor
17%
Silicon
16%
Density
13%
Metal Oxide
12%
Film
11%
Nanowire
11%
Selective Oxidation
11%
Oxide Semiconductor
10%
Surface (Surface Science)
10%
Dielectric Material
9%
Nanosphere
8%
Capacitance
7%
Gallium Arsenide
6%
Thin Films
6%
Composite Material
5%
Capacitor
5%
Electronic Circuit
5%
Bipolar Transistor
5%
Engineering
Quantum Dot
62%
Polysilicon
29%
Silicon Dioxide
27%
Thin-Film Transistor
25%
Metal-Oxide-Semiconductor Field-Effect Transistor
20%
Tunnel Construction
15%
Heterojunctions
13%
Engineering
11%
Nanowire
9%
Room Temperature
9%
Channel Length
9%
Gate Oxide
9%
Phototransistor
8%
Gallium Arsenide
8%
Photocurrent
8%
Inverter
7%
Single Electron
6%
Thermal Oxidation
6%
Optical Interconnect
6%
Responsivity
6%
Si Nanowires
6%
Heterostructures
6%
Charge Transport
5%
Building Block
5%
Bipolar Transistor
5%
Metal Oxide Semiconductor
5%
