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查看斯高帕斯 (Scopus) 概要
李 佩雯
教授
電子研究所
h-index
h10-index
h5-index
1522
引文
22
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
503
引文
13
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
128
引文
7
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1992 …
2024
每年研究成果
概覽
指紋
網路
計畫
(25)
研究成果
(180)
獎項
(1)
類似的個人檔案
(6)
指紋
查看啟用 Pei-Wen Li 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
Germanium Quantum Dots
96%
SiGe
39%
Silica
39%
Silicon Nitride
28%
Germanium
17%
Thermal Oxidation
16%
Quantum Dots
16%
Poly-Si
16%
Room Temperature
16%
Single Hole Transistor
15%
Gate Stack
14%
Self-aligned
14%
Ge Dot
13%
Transistor
12%
Phototransistor
12%
Si1-xGex
12%
Amorphous InGaZnO (a-IGZO)
12%
Selective Oxidation
11%
Heterostructure
11%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
11%
Thin-film Transistors
11%
Tunneling Current
10%
Gallium Arsenide
10%
Self-aligned Electrodes
10%
Film Profile Engineering
10%
Single Electron Transistor
10%
SiGe Channel
9%
Insulator
9%
High Performance
9%
Polysilicon
9%
Nanospheres
9%
MOSFET
9%
Tunable Size
9%
Gate-all-around
9%
Gate Oxide
8%
Channel Length
8%
Si Photonics
8%
Si Substrate
8%
Poly-SiGe
8%
Electronic Devices
8%
Quantum Dot Arrays
7%
Electrical Properties
7%
Film Profile
7%
ZnON
7%
Random Telegraph Noise
7%
PMOSFET
7%
SiGe Heterostructures
7%
Optical Interconnects
7%
Nanowires
7%
T Gate
6%
Material Science
Quantum Dot
100%
Germanium
57%
Transistor
44%
Oxidation Reaction
31%
Thin-Film Transistor
30%
Silicon Nitride
29%
Heterojunction
23%
Oxide Compound
20%
Metal-Oxide-Semiconductor Field-Effect Transistor
18%
Silicon
14%
Density
14%
Metal Oxide
13%
Film
13%
Nanowire
13%
Selective Oxidation
12%
Oxide Semiconductor
12%
Surface (Surface Science)
11%
Nanosphere
9%
Dielectric Material
8%
Capacitance
7%
Gallium Arsenide
7%
Thin Films
7%
Composite Material
6%
Capacitor
6%
Electronic Circuit
6%
Bipolar Transistor
6%
Nanocrystallites
5%
Engineering
Quantum Dot
62%
Silicon Dioxide
29%
Polysilicon
26%
Thin-Film Transistor
22%
Metal-Oxide-Semiconductor Field-Effect Transistor
21%
Heterojunctions
14%
Tunnel Construction
13%
Engineering
12%
Nanowire
11%
Room Temperature
10%
Channel Length
10%
Gate Oxide
10%
Phototransistor
9%
Gallium Arsenide
9%
Single Electron
7%
Inverter
7%
Thermal Oxidation
7%
Optical Interconnect
7%
Responsivity
7%
Si Nanowires
7%
Heterostructures
6%
Building Block
6%
Bipolar Transistor
6%
Photocurrent
5%
Metal Oxide Semiconductor
5%
Si Photonics
5%
Si Substrate
5%
Gate Dielectric
5%
