搜尋結果
2017
Electrostatic Discharge
100%
Electrostatic discharge
83%
Parasitic
43%
Diodes
39%
Capacitance
30%
Luo, Z. ,
Ker, M-D. ,
Cheng, W. H. &
Yen, T. Y. ,
1 3月 2017 ,
於: IEEE Transactions on Circuits and Systems I: Regular Papers. 64 ,
3 ,
p. 528-536 9 p. , 7795238.
研究成果: Article › 同行評審
Pumps
100%
Electric potential
66%
Capacitance
18%
Networks (circuits)
11%
Experiments
7%
Automobile electronic equipment
100%
Transceivers
70%
Voltage
53%
Controllers
39%
Electric potential
38%
2016
Leakage currents
100%
Electric potential
95%
Oxides
79%
Transistors
79%
Calibration
71%
Electrostatic Discharge
100%
Electrostatic discharge
83%
Diodes
58%
Leakage Current
56%
Leakage currents
27%
Electrostatic Discharge
100%
Electrostatic discharge
83%
Thyristors
66%
Monitoring
35%
Electric potential
32%
Electrostatic Discharge
100%
Electrostatic discharge
83%
Oxides
54%
Electric potential
32%
Application
20%
Electrostatic Discharge
100%
Electrostatic discharge
83%
Thyristors
66%
Leakage Current
56%
Metals
41%
Trigger circuits
100%
Electrostatic Discharge
98%
Leakage Current
82%
Thyristors
65%
Voltage
45%
Engineering Device
100%
Electron devices
97%
MOSFET devices
73%
Cathodes
62%
Anodes
60%
Electrostatic Discharge
100%
Electrostatic discharge
83%
Thyristors
66%
Electric network topology
15%
Clamping devices
14%
2015
Electrostatic Discharge
100%
Leakage Current
84%
Electrostatic discharge
83%
Clamping devices
71%
Leakage currents
68%
Parasitic
100%
Flip flop circuits
94%
Integrated circuits
74%
Networks (circuits)
44%
Sensors
41%
2014
Electrostatic Discharge
100%
Electrostatic discharge
83%
Flip flop circuits
37%
Networks (circuits)
35%
Transistors
27%
Chen, W. M. ,
Chiueh, H-M. ,
Chen, T. J. ,
Ho, C. L. ,
Jeng, C. ,
Ker, M-D. ,
Lin, C. Y. ,
Huang, Y. C. ,
Chou, C. W. ,
Fan, T. Y. ,
Cheng, M. S. ,
Hsin, Y. L. ,
Liang, S. F. ,
Wang, Y. L. ,
Shaw, F. Z. ,
Huang, Y. H. ,
Yang, C. H. &
Wu, C-Y. ,
1 1月 2014 ,
於: IEEE Journal of Solid-State Circuits. 49 ,
1 ,
p. 232-247 16 p. , 6637111.
研究成果: Article › 同行評審
Prosthetics
100%
System-on-chip
92%
Amplitude shift keying
28%
Rats
27%
Cutoff frequency
26%
Voltage
100%
Electric potential
71%
Transistors
47%
Prosthetics
30%
System-on-chip
28%
Peng, S. J. ,
Harnod, T. ,
Tsai, J. Z. ,
Ker, M-D. ,
Chiou, J-C. ,
Chiueh, H-M. ,
Wu, C-Y. &
Hsin, Y. L. ,
14 5月 2014 ,
於: BMC Neurology. 14 ,
1 , 104.
研究成果: Article › 同行評審
Gray Matter
100%
Epilepsy
83%
Magnetic Resonance Imaging
65%
Nucleus Accumbens
42%
Caudate Nucleus
34%
Lu, T. C. ,
Chen, W. T. ,
Zan, H-W. &
Ker, M-D. ,
6月 2014 ,
於: Japanese journal of applied physics. 53 ,
6 , 064302.
研究成果: Article › 同行評審
Gallium
100%
Zinc oxide
93%
Indium
91%
gallium oxides
90%
Thin film transistors
89%
Integrated circuit manufacture
100%
Integrated circuits
99%
Industry
79%
Networks (circuits)
59%
Electric potential
55%
Chen, S. H. ,
Linten, D. ,
Scholz, M. ,
Huang, Y. C. ,
Hellings, G. ,
Boschke, R. ,
Ker, M-D. &
Groeseneken, G. ,
1 1月 2014 ,
於: IEEE Transactions on Device and Materials Reliability. 14 ,
2 ,
p. 781-783 3 p. , 6807728.
研究成果: Article › 同行評審
Clamping devices
100%
Networks (circuits)
49%
System-on-chip
45%
Application
28%
Electrostatic Discharge
100%
Electrostatic discharge
83%
clamps
77%
rails
75%
Clamping devices
71%
Electrostatic discharge
100%
Transceivers
72%
Silicon
60%
Electric potential
39%
Thyristors
11%
Electrostatic Discharge
100%
Electrostatic discharge
83%
Clamping devices
71%
Rails
54%
Networks (circuits)
35%
Electrostatic Discharge
100%
silicon controlled rectifiers
97%
systems engineering
69%
Thyristors
66%
disturbances
55%
Huang, K. S. ,
Yang, C. H. ,
Kung, C. P. ,
Grumezescu, A. M. ,
Ker, M-D. ,
Lin, Y. S. &
Wang, C. Y. ,
1 1月 2014 ,
於: Electrophoresis. 35 ,
2-3 ,
p. 330-336 7 p. 研究成果: Article › 同行評審
Drug Carriers
100%
Alginates
96%
Gelatin
89%
Drug Carrier
88%
Intestines
75%
Peng, S. J. ,
Harnod, T. ,
Tsai, J. Z. ,
Huang, C. C. ,
Ker, M-D. ,
Chiou, J-C. ,
Chiueh, H-M. ,
Wu, C-Y. &
Hsin, Y. L. ,
1 1月 2014 ,
於: BioMed Research International. 2014 , 419376.
研究成果: Article › 同行評審
Neural Pathways
100%
Diffusion Tensor Imaging
88%
Atlases
84%
Internal Capsule
76%
White Matter
71%
2013
Electrostatic Discharge
100%
Electrostatic discharge
83%
Thyristors
66%
Voltage
18%
Parasitic
15%
Oxides
100%
Compensation and Redress
88%
Logic gates
69%
Electric potential
60%
Temperature
46%
Electrostatic Discharge
100%
Electrostatic discharge
83%
Millimeter waves
63%
Networks (circuits)
35%
Low noise amplifiers
16%
Display devices
100%
Polychlorinated biphenyls
70%
Liquid crystal displays
70%
Semiconductor materials
57%
Glass
52%
Electrostatic Discharge
100%
Electrostatic discharge
83%
Clamping devices
71%
Equivalent circuits
61%
Field Effect
38%
Acoustic impedance
100%
Rats
81%
Animals
66%
Silicon
53%
Electric power utilization
50%
Lin, C. Y. ,
Tsai, S. Y. ,
Chu, L. W. &
Ker, M-D. ,
1 1月 2013 ,
於: IEEE Transactions on Microwave Theory and Techniques. 61 ,
2 ,
p. 914-921 8 p. , 6381493.
研究成果: Article › 同行評審
circuit protection
100%
Electrostatic discharge
78%
power amplifiers
70%
Power amplifiers
59%
CMOS
53%
Leakage Current
100%
clamps
91%
rails
90%
Clamping devices
85%
Rails
64%
Electrostatic Discharge
100%
Leakage Current
84%
Electrostatic discharge
83%
Clamping devices
71%
Leakage currents
68%
Electrostatic Discharge
100%
Electrostatic discharge
83%
Transceivers
60%
Inductor
18%
Buffer Solution
16%
2012
Lin, C. Y. ,
Chu, L. W. ,
Tsai, S. Y. &
Ker, M-D. ,
14 9月 2012 ,
於: IEEE Transactions on Device and Materials Reliability. 12 ,
3 ,
p. 554-561 8 p. , 6155079.
研究成果: Article › 同行評審
Electrostatic Discharge
100%
Electrostatic discharge
83%
Networks (circuits)
35%
Application
20%
Parasitic
7%
Thyristors
100%
Diodes
88%
Electrostatic Discharge
75%
Voltage
69%
Leakage Current
63%
silicon controlled rectifiers
100%
Electrostatic discharge
86%
inductors
78%
Low noise amplifiers
76%
Thyristors
68%
Electrostatic Discharge
100%
Electrostatic discharge
83%
CMOS
57%
electrostatics
48%
Networks (circuits)
35%
Electrostatic discharge
100%
Display devices
58%
CMOS integrated circuits
22%
Firmware
18%
Electric potential
7%
Electrostatic discharge
100%
Clamping devices
85%
Rails
65%
Networks (circuits)
42%
Electric potential
39%
Electrostatic Discharge
100%
Leakage Current
84%
Electrostatic discharge
83%
Clamping devices
71%
Leakage currents
68%
Electrostatic Discharge
100%
Electrostatic discharge
83%
Clamping devices
71%
Resistors
61%
Rails
54%
Electrostatic Discharge
100%
Electrostatic discharge
83%
Diodes
58%
electrostatics
48%
diodes
48%
2011
Electrostatic Discharge
100%
Electrostatic discharge
83%
CMOS
57%
electrostatics
48%
Networks (circuits)
35%
Transconductance
100%
touch
79%
Glass Substrate
64%
readout
58%
Glass
51%
Thin film transistors
100%
Liquid crystal displays
84%
pixels
63%
analogs
63%
transistors
62%
Liquid crystal displays
100%
Glass
98%
Modulation
95%
Pixels
92%
Substrates
87%
Amorphous silicon
100%
Amorphous Silicon
99%
Threshold voltage
80%
Liquid crystal displays
79%
cancellation
75%