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國立陽明交通大學研發優勢分析平台 首頁
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查看斯高帕斯 (Scopus) 概要
林 志忠
約聘研究員
電子物理學系
https://orcid.org/0000-0001-8640-3617
h-index
h10-index
h5-index
3498
引文
31
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
438
引文
11
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
235
引文
6
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1986 …
2025
每年研究成果
概覽
指紋
網路
計畫
(20)
研究成果
(162)
獎項
(2)
類似的個人檔案
(6)
指紋
查看啟用 Juhn-Jong Lin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Material Science
Alloy
45%
Aluminum
8%
Aluminum Oxide
7%
Annealing
11%
Carrier Concentration
15%
Cobalt
6%
Complex System
17%
Conductor
10%
Current Voltage Characteristics
5%
Density
10%
Dephasing
23%
Electrical Conductivity
6%
Electrical Resistivity
100%
Electron Transfer
6%
Electronic Circuit
9%
Ferromagnetism
16%
Field Effect Transistor
5%
Film
68%
Graphene
5%
Hall Effect
12%
Helium
21%
Heterojunction
13%
Indium
11%
Indium Tin Oxide
26%
Lithography
9%
Magnetoresistance
32%
Metal Film
6%
Molecular Beam Epitaxy
6%
Monolayers
9%
Nanocontact
6%
Nanocrystalline
6%
Nanorod
6%
Nanostructure
5%
Nanowire
79%
Oxide Compound
12%
Oxide Film
13%
Oxygen Vacancy
12%
Percolation
22%
Silicon
10%
Single Crystal
6%
Superconducting Material
15%
Superconductivity
38%
Thermoelectrics
10%
Thick Films
12%
Thin Films
27%
Tin
6%
Transition Metal Dichalcogenide
8%
Volume Fraction
23%
X-Ray Diffraction
6%
ZnO
27%
Physics
Alloy
54%
Charge Transfer
22%
Conductance
43%
Conduction Electron
6%
Density of States
5%
Diffusion
7%
Electric Field
7%
electrode
7%
Electron Beam
6%
Electron Density
7%
Electron Energy
9%
Electron Phonon Interactions
14%
Electron Scattering
65%
Graphene
9%
Ground State
5%
Indium
29%
Indium Oxides
9%
Inelastic Scattering
8%
Kondo Effect
9%
Liquid Helium
25%
Magnetic Field
24%
Magnetoresistance
30%
Magnetoresistivity
6%
Mean Free Path
13%
Melting Point
5%
Metal Films
6%
Nanorod
6%
Nanowire
29%
Oxide
23%
Oxide Film
16%
Oxygen Vacancy
7%
Percolation
8%
Phonon
64%
Photoelectric Emission
10%
Physics
7%
Polycrystalline
14%
Quantum Dot
20%
Quantum Interference
15%
Room Temperature
6%
Spin-Orbit Coupling
6%
Superconductivity
19%
Temperature Dependence
37%
Thermoelectricity
10%
Thick Films
13%
Thin Films
24%
Transport Property
15%
Transportation
42%
Tunnel Junction
7%
Keyphrases
AuPd
14%
Composite System
17%
CoSi2
19%
Dephasing
39%
Dephasing Time
18%
Disordered Metals
19%
Double Quantum Dot
10%
Electrical Resistivity
13%
Electrical Transport
22%
Electron Scattering
9%
Electron-electron Interaction
22%
Electron-electron Scattering
12%
Electron-phonon Interaction
16%
Electron-phonon Scattering
26%
Ferromagnetism
9%
Giant Hall Effect
10%
High Temperature
9%
Impurities
14%
Indium-tin-oxide Nanowires
9%
IrO2
22%
Law
15%
Localization Studies
12%
Low Temperature
21%
Magnetization
8%
Magnetization Measurements
8%
Magnetoresistance
20%
Magnetoresistivity
9%
Molecular Beam Epitaxy
9%
Nanowires
34%
Non-magnetic
10%
Percolation Threshold
9%
Quantum Interference
16%
Resistivity
54%
RuO2
21%
Scattering Time
25%
Superconducting Transition Temperature
20%
Superconductivity
27%
Temperature Behavior
8%
Temperature Dependence
17%
Thermoelectric
13%
Three-dimensional (3D)
24%
TiAl Alloy
13%
Transport Properties
10%
Two Dimensional
9%
Variable Range Hopping
10%
Volume Fraction
16%
Weak Localization
30%
Wide Temperature Range
8%
Zn1-xMgxO
9%
ZnO Nanowires
11%
