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查看斯高帕斯 (Scopus) 概要
張 立
教授
工學院碩士在職專班
https://orcid.org/0000-0001-6987-1283
h-index
h10-index
h5-index
3502
引文
29
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
345
引文
10
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
161
引文
7
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1986 …
2025
每年研究成果
概覽
指紋
網路
計畫
(32)
研究成果
(230)
活動
(1)
類似的個人檔案
(6)
指紋
查看啟用 Li Chang 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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重量
按字母排序
Material Science
Film
100%
Diamond
68%
ZnO
60%
Chemical Vapor Deposition
53%
Transmission Electron Microscopy
49%
Thin Films
37%
Sapphire
33%
Diamond Films
31%
Gallium Arsenide
29%
Nucleation
26%
Quantum Dot
25%
Surface (Surface Science)
25%
Pulsed Laser Deposition
24%
Oxide Compound
23%
Density
22%
Epitaxy
21%
X-Ray Diffraction
19%
Silicon
17%
Annealing
16%
Scanning Electron Microscopy
16%
Titanium
14%
Photoluminescence
14%
Single Crystal
14%
Magnesium Oxide
14%
Zinc Oxide
13%
Phase Composition
12%
Buffer Layer
12%
Crystal Defect
12%
High-Resolution Transmission Electron Microscopy
12%
Epitaxial Film
12%
Aluminum Nitride
11%
Nitride Compound
10%
Electrical Resistivity
10%
Nitriding
9%
Scanning Transmission Electron Microscopy
9%
Optical Property
9%
Atomic Force Microscopy
8%
Solar Cell
8%
Metal-Organic Chemical Vapor Deposition
8%
Nanorod
7%
Tungsten
7%
Oxidation Reaction
7%
Structural Property
7%
Thermal Stability
7%
Nanoparticle
7%
Carbide
7%
X-Ray Photoelectron Spectroscopy
7%
Molecular Beam Epitaxy
6%
Heteroepitaxy
6%
Indium
6%
Keyphrases
Diamond
55%
Transmission Electron Microscopy
47%
Epitaxial
46%
LaAlO3
36%
Microwave Plasma Chemical Vapor Deposition (MPCVD)
36%
Diamond Film
33%
Pulsed Laser Deposition
30%
Gallium Arsenide
27%
Si(111)
27%
Si Substrate
26%
X Ray Diffraction
24%
Chemical Vapor Deposition
22%
Annealing
22%
Scanning Electron Microscopy
21%
Sapphire
21%
Microstructure
20%
A-plane
19%
Quantum Dots
19%
ZnO Film
19%
Structural Properties
17%
Dislocation
15%
Cross-sectional Transmission Electron Microscopy
14%
Silica
14%
R-plane Sapphire
14%
M-plane
13%
Atomic Force Microscopy
13%
Semi-polar
13%
Cu-Ta
13%
Epitaxial Film
13%
Epitaxy
12%
Diamond Deposition
12%
Microwave Plasma
12%
Structural Characterization
12%
Sapphire Substrate
11%
Oxides
11%
Metal-organic Chemical Vapor Deposition (MOCVD)
11%
Epitaxial Growth
11%
InAs Quantum Dots
11%
Bias Enhanced nucleation
11%
Adamantane
11%
Copper Metallization
10%
Diamond nucleation
10%
Buffer Layer
10%
Nanoplatelets
10%
Heteroepitaxial Growth
10%
High-resolution Transmission Electron Microscopy (HRTEM)
10%
Interfacial Structure
9%
Orientation Relationship
9%
Interfacial Reaction
9%
TiN Film
9%
Engineering
Diamond
65%
Chemical Vapor Deposition
46%
Vapor Deposition
43%
Microwave Plasma
30%
Thin Films
26%
Gallium Arsenide
23%
Pulsed Laser
19%
Ray Diffraction
19%
Quantum Dot
16%
Si Substrate
15%
Metallizations
11%
High Resolution
10%
Phase Composition
10%
Nanoplatelet
9%
Interlayer
8%
Methane
8%
Atomic Force Microscopy
8%
Epitaxial Film
8%
Metal Organic Chemical Vapor Deposition
8%
Pretreatment
8%
Indium Gallium Arsenide
7%
Quantum Well
7%
Room Temperature
7%
Buffer Layer
7%
Solar Cell
7%
Based Solar Cell
7%
Silicon Dioxide
7%
Diffusion Barrier
7%
Band Edge
6%
Surface Morphology
6%
Threading Dislocation
6%
Nanoscale
6%
Nanometre
5%
Reactive Sputtering
5%
Numerical Study
5%
Silicon Substrate
5%
Structural Property
5%
Sapphire Substrate
5%
