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查看斯高帕斯 (Scopus) 概要
郭 治群
教授
電子研究所
https://orcid.org/0000-0001-8868-0917
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h10-index
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565
引文
14
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
100
引文
5
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
7
引文
1
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1993 …
2024
每年研究成果
概覽
指紋
網路
計畫
(17)
研究成果
(84)
活動
(1)
類似的個人檔案
(6)
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指紋
查看啟用 Jyh-Chyurn Guo 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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重量
按字母排序
Engineering & Materials Science
Substrates
100%
Transconductance
71%
Capacitance
70%
FinFET
53%
Oxides
52%
Foundries
42%
Noise figure
42%
Networks (circuits)
39%
Doping (additives)
36%
Low noise amplifiers
32%
Electric potential
31%
Semiconductor doping
31%
MOSFET devices
31%
Scattering parameters
30%
Varactors
28%
System-on-chip
28%
Threshold voltage
28%
Degradation
27%
Capacitors
26%
Ultra-wideband (UWB)
26%
Drain current
26%
Telegraph
26%
Analytical models
26%
Durability
26%
Eddy currents
25%
Cutoff frequency
25%
Skin effect
24%
Silicon
24%
Circuit simulation
23%
Flash memory
22%
Static random access storage
20%
Millimeter waves
20%
Broadband amplifiers
20%
Leakage currents
19%
Thermal noise
18%
Electric lines
18%
Equivalent circuits
17%
Inductance
15%
Variable frequency oscillators
15%
Metals
15%
Hole mobility
15%
Mixer circuits
15%
Interface states
14%
Parameter extraction
13%
Tunnel field effect transistors
13%
Negative bias temperature instability
13%
Electrons
13%
Transceivers
13%
RRAM
13%
Analog circuits
13%
Physics & Astronomy
CMOS
80%
inductors
79%
layouts
57%
chips
55%
field effect transistors
52%
broadband
40%
low noise
32%
performance
27%
Q factors
24%
flicker
23%
axial strain
21%
low frequencies
20%
metal oxide semiconductors
19%
analogs
19%
optimization
17%
simulation
17%
capacitance
16%
eddy currents
15%
low voltage
15%
amplifiers
14%
current amplifiers
14%
systems-on-a-chip
13%
capacitors
13%
sudden ionospheric disturbances
13%
MIM (semiconductors)
13%
augmentation
12%
design optimization
12%
foundries
12%
logic
12%
transconductance
11%
millimeter waves
11%
scaling
10%
hole mobility
10%
costs
10%
silicon
10%
engineering
9%
manufacturing
9%
RLC circuits
9%
time dependence
8%
conductors
8%
inductance
8%
bombardment
8%
halos
8%
power gain
8%
degradation
8%
threshold voltage
8%
modules
7%
anomalies
7%
electrical resistivity
7%
metals
7%
Chemical Compounds
Parasitic
99%
Inductor
94%
Transconductance
66%
Simulation
36%
Trap Density Measurement
35%
Compound Mobility
34%
Flicker Noise
34%
Interface Trap
33%
Point Group C∞V
29%
Eddy Current
28%
Drain Current
28%
Capacitor
28%
Tunneling
28%
Resistance
27%
Length
21%
Fluorescence Maxima
20%
Voltage
20%
Dielectric Material
19%
Oxide
18%
Leakage Current
16%
Coil
14%
Inductance
14%
Reduction
14%
Epitaxial Film
13%
Foundry
13%
Conductor
11%
Doping Material
8%
Indicator
8%
Entropy
7%
Dimension
7%
Application
7%
Tunneling Current
7%
Interface State
7%
Semiconductor
7%
Time
6%
Charge Pumping
6%
Metal
6%
Proton
6%
Size Reduction
6%
Intramuscular
5%
Cmin
5%
Ion
5%
Flow
5%
