Jenn-Fang Chen

2015

Sweeping-rate-dependent photocurrent of GaAs Schottky diode with strain relaxed InAs quantum dots

Wang, J. F., Lin, C. L., Pan, S. S., Huang, C-H., Hsieh, C. S. & Chen, J-F., 1 四月 2015, 於: Japanese Journal of Applied Physics. 54, 4, 04DF04.

研究成果: Article › 同行評審

2014

Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer

Yu, T. Y., Pan, F-M., Chang, C. Y., Hu, T., Chen, J-F., Wang, J. F., Lin, C. L., Chen, T. H. & Chen, T. M., 1 一月 2014, 於: Current Applied Physics. 14, 5, p. 659-664 6 p.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

2013

Effects of cross-sectional area on the tunneling-junction array in octahedral PbSe colloidal-nanocrystal solids

Chiu, S. C., Jhang, J. S., Chen, J-F., Fang, J. & Jian, W-B., 14 十月 2013, 於: Physical Chemistry Chemical Physics. 15, 38, p. 16127-16131 5 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Exploration of water jet generated by Qswitched laser induced water breakdown with different depths beneath a flat free surface

Chen, R. C. C., Yu, Y. T., Su, K-W., Chen, J-F. & Chen, Y-F., 14 一月 2013, 於: Optics Express. 21, 1, p. 445-453 9 p.

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

Hole injection and electron overflow improvement in 365nm light-emitting diodes by band-engineering electron blocking layer

Fu, Y. K., Lu, Y. H., Xuan, R., Chen, J-F. & Su, Y. K., 1 八月 2013, 於: Japanese Journal of Applied Physics. 52, 8 PART 2, 08JK05.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

2012

Dielectrophoretic placement of quasi-zero-, one-, and two-dimensional nanomaterials into nanogap for electrical characterizations

Lin, Y. F., Chiu, S. C., Wang, S. T., Fu, S. K., Chen, C. H., Xie, W. J., Yang, S-H., Hsu, C-S., Chen, J-F., Zhou, X., Liu, Z., Fang, J. & Jian, W-B., 1 八月 2012, 於: Electrophoresis. 33, 16, p. 2475-2481 7 p.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Electron emission properties of GaAsN/GaAs quantum well containing N-Related localized states: The influence of illuminance

Hsieh, M. C., Wang, J. F., Wang, Y. S., Yang, C. H., Chiang, C. H. & Chen, J-F., 1 二月 2012, 於: Japanese journal of applied physics. 51, 2 PART 2, 02BJ12.

研究成果: Article › 同行評審

Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode

Xuan, R., Kuo, W. H., Hu, C. W., Lin, S. F. & Chen, J-F., 10 九月 2012, 於: Applied Physics Letters. 101, 11, 112105.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?

Chen, J-F., Lin, Y. C., Chiang, C. H., Chen, R. C. C., Chen, Y-F., Wu, Y. H. & Chang, L., 1 一月 2012, 於: Journal of Applied Physics. 111, 1, 7 p., 013709.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

Optical simulation and fabrication of near-ultraviolet LEDs on a roughened backside GaN substrate

Fu, Y. K., Lu, Y. H., Xuan, R., Chao, C. H., Su, Y. K. & Chen, J-F., 7 三月 2012, 於: IEEE Photonics Technology Letters. 24, 6, p. 488-490 3 p., 6122049.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

2011

Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Fu, Y. K., Lu, Y. H., Jiang, R. H., Chen, B. C., Fang, Y. H., Xuan, R., Su, Y. K., Lin, C. F. & Chen, J-F., 1 八月 2011, 於: Solid-State Electronics. 62, 1, p. 142-145 4 p.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Electron emission properties of nitrogen-induced localized defects in InAsN/GaAs quantum dots

Yang, C. H., Hsieh, M. C., Wu, C. W., Chang, Y. T., Wu, Y. H., Chang, L. & Chen, J-F., 1 十一月 2011, 於: Japanese journal of applied physics. 50, 11R, 6 p., 111001.

研究成果: Article › 同行評審

Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimony

Chiang, C. H., Wu, Y. H., Hsieh, M. C., Yang, C. H., Wang, J. F., Chen, R. C. C., Chang, L. & Chen, J-F., 15 八月 2011, 於: Applied Surface Science. 257, 21, p. 8784-8787 4 p.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodes

Wang, Y. S., Chen, N. C., Lu, C. Y. & Chen, J-F., 15 十一月 2011, 於: Physica B: Condensed Matter. 406, 22, p. 4300-4303 4 p.

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

Reduction of efficiency droop in InGaN light-emitting diode grown on self-separated freestanding GaN substrates

Chao, C. L., Xuan, R., Yen, H. H., Chiu, C. H., Fang, Y. H., Li, Z. Y., Chen, B. C., Lin, C-C., Chiu, C. H., Guo, Y. D., Kuo, H-C., Chen, J-F. & Cheng, S-J., 15 六月 2011, 於: IEEE Photonics Technology Letters. 23, 12, p. 798-800 3 p., 5740304.

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

Role of the N-related localized states in the electron emission properties of a GaAsN quantum well

Hsieh, M. C., Wang, J. F., Wang, Y. S., Yang, C. H., Chen, R. C. C., Chiang, C. H., Chen, Y-F. & Chen, J-F., 15 十一月 2011, 於: Journal of Applied Physics. 110, 10, 103709.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process

Fu, Y. K., Chen, B. C., Fang, Y. H., Jiang, R. H., Lu, Y. H., Xuan, R., Huang, K-F., Lin, C. F., Su, Y. K., Chen, J-F. & Chang, C-Y., 15 九月 2011, 於: IEEE Photonics Technology Letters. 23, 19, p. 1373-1375 3 p., 5940992.

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Fu, Y. K., Jiang, R. H., Lu, Y. H., Chen, B. C., Xuan, R., Fang, Y. H., Lin, C. F., Su, Y. K. & Chen, J-F., 21 三月 2011, 於: Applied Physics Letters. 98, 12, 121115.

研究成果: Article › 同行評審

31 引文斯高帕斯（Scopus）

2010

Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layer

Chen, J-F., Chen, R. C. C., Chiang, C. H., Chen, Y-F., Wu, Y. H. & Chang, L., 30 八月 2010, 於: Applied Physics Letters. 97, 9, 3 p., 092110.

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

Compensation effect and differential capacitance analysis of electronic energy band structure in relaxed InAs quantum dots

Chen, J-F., Chen, R. C. C., Chiang, C. H., Hsieh, M. C., Chang, Y. C. & Chen, Y-F., 15 九月 2010, 於: Journal of Applied Physics. 108, 6, 063705.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers

Shu, G. W., Wang, J. S., Shen, J. L., Hsiao, R. S., Chen, J. F., Lin, T. Y., Wu, C. H., Huang, Y. H. & Yang, T. N., 15 一月 2010, 於: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 166, 1, p. 46-49 4 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Study of electric characteristics and diffusion effects of 2-methyl-9,10-di(2-naphthyl)anthracene doped with cesium fluoride by admittance spectroscopy

Hsieh, M. T., Ho, M. H., Lin, K. H., Chen, J-F., Chen, T-M. & Chen, C. H., 12 四月 2010, 於: Applied Physics Letters. 96, 13, 133310.

研究成果: Article › 同行評審

22 引文斯高帕斯（Scopus）

2009

Influence of thermal annealing on the electron emission of InAs quantum dots containing a misfit defect state

Chen, J-F., Yang, C. H., Hsu, R. M. & Wang, U. S., 9 四月 2009, 於: Journal of Applied Physics. 105, 6, 063705.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

Spectral shape and broadening of emission from AlGaInP light-emitting diodes

Chen, N. C., Lien, W. C., Yang, Y. K., Shen, C., Wang, Y. S. & Chen, J-F., 23 十月 2009, 於: Journal of Applied Physics. 106, 7, 074514.

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer

Wu, Y. H., Chang, L., Lin, P. Y., Chiang, C. H., Chen, J-F. & Chi, T. W., 21 九月 2009, 於: Journal of Physics D: Applied Physics. 42, 18, 5 p., 185106.

研究成果: Article › 同行評審

Study of efficient and stable organic light-emitting diodes with 2-methyl-9,10-di(2-naphthyl)anthracene as hole-transport material by admittance spectroscopy

Ho, M. H., Hsieh, M. T., Lin, K. H., Chen, T-M., Chen, J-F. & Chen, C. H., 23 一月 2009, 於: Applied Physics Letters. 94, 2, 023306.

研究成果: Article › 同行評審

25 引文斯高帕斯（Scopus）

Study of electrical characterization of 2-methyl-9, 10-di (2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer

Hsieh, M. T., Ho, M. H., Lin, K. H., Chen, J-F., Chen, T-M. & Chen, C. H., 31 七月 2009, 於: Applied Physics Letters. 95, 3, 033501.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

2008

Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

Hsu, C. C., Hsu, R-Q., Wu, Y. H., Chi, T. W., Chiang, C. H., Chen, J-F. & Chang, M. N., 1 十月 2008, 於: Ultramicroscopy. 108, 11, p. 1495-1499 5 p.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots

Chen, J-F., Chiang, C. H., Wu, Y. H., Chang, L. & Chi, J. Y., 15 七月 2008, 於: Journal of Applied Physics. 104, 2, 5 p., 023509.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

Effect of nitrogen incorporated methods on optical properties of InAs/GaAs quantum dots

Chiung-Chih, H., Ray-Quen, H., Yue-Han, W., Chen, J-F., Tung-Wei, C., Chen-Hao, C. & Mao-Nan, C., 1 八月 2008, 於: Microscopy and Microanalysis. 14, SUPPL. 2, p. 356-357 2 p.

研究成果: Article › 同行評審

Electrical characterization of organic light-emitting diodes using dipotassium phthalate as n -type dopant

Ho, M. H., Hsieh, M. T., Chen, T-M., Chen, J-F., Hwang, S. W. & Chen, C. H., 15 九月 2008, 於: Applied Physics Letters. 93, 8, 083505.

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

Electrical properties of metal-silicon nitride-hydrogenated amorphous silicon capacitor elucidated using admittance spectroscopy

Hsieh, M. T., Chen, J-F., Yen, K. H., Zan, H-W., Chang, C. C., Chen, C. H., Shih, C. C. & Lee, Y. S., 19 十二月 2008, 於: Japanese journal of applied physics. 47, 12, p. 8714-8718 5 p.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Electron emissions in InAs quantum dots containing a nitrogen incorporation induced defect state: The influence of thermal annealing

Chen, J-F., Yu, C. C. & Yang, C. H., 10 十二月 2008, 於: Nanotechnology. 19, 49, 495201.

研究成果: Article › 同行評審

Investigations on highly stable thermal characteristics of a dilute In_0.2Ga_0.8AsSb/GaAs doped-channel field-effect transistor

Su, K. H., Hsu, W. C., Lee, C. S., Hu, P. J., Wu, Y. H., Chang, L., Hsiao, R. S., Chen, J-F. & Chi, T. W., 1 四月 2008, 於: Semiconductor Science and Technology. 23, 4, p. 1-6 6 p., 045012.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Strain relaxation in InAs self-assembled quantum dots induced by a high N incorporation

Chen, J-F., Yang, C. H., Wu, Y. H., Chang, L. & Chi, J. Y., 15 十一月 2008, 於: Journal of Applied Physics. 104, 10, 5 p., 103717.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

2007

Analysis of strain relaxation in GaAsInGaAsGaAs structures by spectroscopy of relaxation-induced states

Chen, J-F., Chiang, C. H., Hsieh, P. C. & Wang, J. S., 26 二月 2007, 於: Journal of Applied Physics. 101, 3, 033702.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

A novel dilute antimony channel In_0.2Ga_0.8AsSb/ GaAs HEMT

Su, K. H., Hsu, W. C., Lee, C. S., Wu, T. Y., Wu, Y. H., Chang, L., Hsiao, R. S., Chen, J-F. & Chi, W. C., 1 二月 2007, 於: IEEE Electron Device Letters. 28, 2, p. 96-99 4 p., 4068971.

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

Deep-level emissions in GaAsN/GaAs structures grown by metal organic chemical vapor deposition

Chen, J-F., Ke, C. T., Hsieh, P. C., Chiang, C. H., Lee, W-I. & Lee, S. C., 2 八月 2007, 於: Journal of Applied Physics. 101, 12, 123515.

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

Electron emission properties of relaxation-induced traps in InAs/GaAs quantum dots and the effect of electronic band structure

Chen, J-F. & Wang, J. S., 10 九月 2007, 於: Journal of Applied Physics. 102, 4, 043705.

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

Evidence for the electron trap state associated with N-rich clusters in InGaAsN/GaAs quantum wells

Chen, J-F., Hsieh, P. C., Hsiao, R. S., Wang, J. S. & Chi, J. Y., 13 六月 2007, 於: Nanotechnology. 18, 23, 235402.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Highly stable thermal characteristics of a novel in_0.3Ga _0.7As_0.99N_0.01(Sb)/GaAs high-electron-mobility transistor

Su, K. H., Hsu, W. C., Lee, C. S., Hu, P. J., Hsiao, R. S., Chen, J-F. & Chi, T. W., 24 四月 2007, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46, 4 B, p. 2344-2347 4 p.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures

Wang, J. S., Yu, S. H., Lin, Y. R., Lin, H. H., Yang, C. S., Chen, T. T., Chen, Y. F., Shu, G. W., Shen, J. L., Hsiao, R. S., Chen, J-F. & Chi, J. Y., 10 一月 2007, 於: Nanotechnology. 18, 1, 015401.

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

Relaxation-induced lattice misfits and their effects on the emission properties of InAs quantum dots

Chen, J-F., Wang, Y. Z., Chiang, C. H., Hsiao, R. S., Wu, Y. H., Chang, L., Wang, J. S., Chi, T. W. & Chi, J. Y., 5 九月 2007, 於: Nanotechnology. 18, 35, p. 1-7 7 p., 355401.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

2006

Comparative study of single and multiemissive layers in inverted white organic light-emitting devices

Chu, T. Y., Chen, J-F., Chen, S. Y. & Chen, C. H., 21 九月 2006, 於: Applied Physics Letters. 89, 11, 113502.

研究成果: Article › 同行評審

25 引文斯高帕斯（Scopus）

Effect of growth rate on the composition fluctuation of InGaAsN/GaAs single quantum wells

Chen, J-F., Hsiao, R. S., Hsieh, P. C., Wang, J. S. & Chi, J. Y., 11 七月 2006, 於: Journal of Applied Physics. 99, 12, 123718.

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

Effect of incorporating an InAlAs layer on electron emission in self-assembled InAs quantum dots

Chen, J-F., Hsiao, R. S., Hsieh, M. F., Wang, J. S. & Chi, J. Y., 24 一月 2006, 於: Journal of Applied Physics. 99, 1, 014303.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Evolution of carrier distribution and defects in InGaAsN/GaAs quantum wells with composition fluctuation

Chen, J-F., Hsiao, R. S., Hsieh, P. C., Chen, Y. C., Wang, J. S. & Chi, J. Y., 7 七月 2006, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 7, p. 5662-5666 5 p.

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

Evolution of conduction and interface states of laterally wet-oxidized AlGaAs with oxidation time

Chen, J-F., Hsiao, R. S., Hung, W. K., Wang, J. S., Chi, J. Y., Yu, H-C. & Su, Y. K., 15 一月 2006, 於: Journal of Applied Physics. 99, 2, 023711.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Highly efficient and stable inverted bottom-emission organic light emitting devices

Chu, T. Y., Chen, J-F., Chen, S. Y., Chen, C. J. & Chen, C. H., 14 九月 2006, 於: Applied Physics Letters. 89, 5, 053503.

研究成果: Article › 同行評審

121 引文斯高帕斯（Scopus）

Highly power efficient organic light-emitting diodes with a p-doping layer

Chang, C. C., Hsieh, M. T., Chen, J-F., Hwang, S. W. & Chen, C. H., 1 十二月 2006, 於: Applied Physics Letters. 89, 25, 253504.

研究成果: Article › 同行評審

140 引文斯高帕斯（Scopus）

陳 振芳

研究成果

搜尋結果

陳振芳