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查看斯高帕斯 (Scopus) 概要
陳 振芳
教授
電子物理學系
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03-5712121#56124
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jfchen
cc.nctu.edu
tw
h-index
h10-index
2052
引文
23
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
10
引文
1
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1982 …
2015
每年研究成果
概覽
指紋
網路
計畫
(9)
研究成果
(148)
獎項
(3)
類似的個人檔案
(6)
指紋
查看啟用 Jenn-Fang Chen 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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重量
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Keyphrases
Gallium Arsenide
88%
GaSb
57%
Quantum Dots
51%
Molecular Beam Epitaxy
44%
AlSb
42%
Band-to-band Tunneling
40%
InAs Quantum Dots
34%
InGaAs
32%
Organic Light-emitting Diodes
30%
Admittance Spectroscopy
28%
Strain Relaxation
25%
GaAs Quantum Well
24%
GaAs Quantum Dot
23%
Low Temperature
21%
InGaAsN
20%
High Efficiency
17%
Naphthyl
17%
Photoluminescence
16%
Activation Energy
16%
Light-emitting Diodes
16%
Ni-P
15%
Vertical-cavity Surface-emitting Laser (VCSEL)
15%
Electron Emission
15%
Room Temperature
15%
Tunnel Diode
14%
Carrier Depletion
14%
Temperature Effect
14%
SnTe
14%
Electrical Properties
13%
Alq3
13%
Deep Level Transient Spectroscopy
12%
Double Barrier
12%
P-type Doping
12%
Electrical Characterization
12%
Metal-organic Chemical Vapor Deposition (MOCVD)
12%
Self-assembled Quantum Dots
12%
Tunneling
12%
Conduction Band
11%
Methyl
11%
Quantum Well
11%
Capacitance-voltage
11%
Tris
10%
Indium Gallium Nitride (InGaN)
10%
Carrier Distribution
10%
Doped Layers
9%
Tungsten Oxide
9%
Power Output
9%
Single Quantum Well
9%
Blue Shift
9%
Annealing
9%
Engineering
Gallium Arsenide
90%
Quantum Dot
56%
Tunnel Construction
41%
Quantum Well
39%
Indium Gallium Arsenide
30%
Organic Light-Emitting Diode
21%
Deep Level
20%
Low-Temperature
20%
Light-Emitting Diode
19%
Room Temperature
17%
Electron Emission
14%
Strain Relaxation
14%
Phase Composition
12%
Current-Voltage Characteristic
12%
Emitting Laser
12%
Energy Engineering
12%
Emitting Device
11%
Transients
11%
Cavity Surface
10%
Valence Band
10%
Gaas Substrate
8%
Negative Differential Resistance
8%
Conduction Band
8%
Ground State
8%
Gaas Layer
7%
Temperature Dependence
7%
Activation Energy
7%
Dopants
7%
Output Power
6%
Active Region
6%
Electron Injection
6%
Ultraviolet Light
6%
Band Structure
5%
Band Gap
5%
Threshold Current Density
5%
Critical Thickness
5%
Pressure Ratio
5%
Optoelectronics
5%
Superlattice
5%
Material Science
Gallium Arsenide
100%
Quantum Dot
60%
Capacitance
41%
Light-Emitting Diode
34%
Molecular Beam Epitaxy
31%
Photoluminescence
26%
Indium Gallium Arsenide
26%
Quantum Well
22%
Density
19%
Activation Energy
18%
Doping (Additives)
15%
Schottky Diode
15%
Annealing
12%
Surface (Surface Science)
12%
Oxide Compound
11%
Electronic Circuit
10%
Electron Transfer
10%
Deep-Level Transient Spectroscopy
9%
Tungsten
9%
Heterojunction
8%
Cathode
8%
Indium Tin Oxide
7%
Antimony
7%
Chemical Vapor Deposition
7%
Current Voltage Characteristics
6%
Transmission Electron Microscopy
6%
Phase Composition
5%
Band Offset
5%
Aluminum
5%
