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查看斯高帕斯 (Scopus) 概要
陳 振芳
教授
電子物理學系
電話
03-5712121#56124
電子郵件
jfchen@cc.nctu.edu.tw
1982 …
2015
每年研究成果
概覽
指紋
網路
計畫
(9)
研究成果
(148)
獎項
(3)
類似的個人檔案
(7)
如果您對這些純文本內容做了任何改變，很快就會看到。
指紋
查看啟用 Jenn-Fang Chen 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering & Materials Science
Molecular beam epitaxy
100%
Photoluminescence
71%
Semiconductor quantum wells
60%
Organic light emitting diodes (OLED)
52%
Electrons
40%
Capacitance
40%
Doping (additives)
38%
Diodes
36%
Surface emitting lasers
35%
Spectroscopy
31%
Temperature
30%
Wavelength
29%
Threshold current density
29%
Light emitting diodes
29%
Nitrogen
28%
Metallorganic chemical vapor deposition
28%
Electron emission
28%
Substrates
24%
Electric potential
24%
Electric properties
24%
Defects
24%
Electron injection
24%
Growth temperature
22%
Deep level transient spectroscopy
22%
Optical properties
20%
Quantum well lasers
19%
Resonant tunneling
19%
Activation energy
19%
Valence bands
19%
Ground state
17%
Molecular beams
17%
Laser modes
16%
Blue shift
16%
Equivalent circuits
15%
Heterojunctions
14%
Impurities
14%
Cathodes
14%
Annealing
13%
Structural properties
13%
Current density
13%
Current voltage characteristics
13%
Conduction bands
13%
Hall mobility
12%
Chemical analysis
12%
Quantum efficiency
12%
Ridge waveguides
12%
Capacitance measurement
12%
Antimony
12%
Atoms
11%
Excited states
11%
Physics & Astronomy
quantum dots
97%
capacitance
59%
molecular beam epitaxy
55%
quantum wells
53%
electrical impedance
53%
light emitting diodes
52%
traps
52%
spectroscopy
39%
electric potential
35%
photoluminescence
34%
electron emission
32%
depletion
27%
diodes
26%
defects
26%
Schottky diodes
23%
current density
22%
characterization
21%
metalorganic chemical vapor deposition
21%
surface emitting lasers
20%
molecular beams
20%
electrons
19%
nitrogen
18%
tungsten oxides
18%
cavities
18%
conduction bands
18%
injection
16%
ridges
16%
room temperature
16%
activation energy
16%
valence
16%
valleys
15%
anthracene
15%
wavelengths
15%
threshold currents
14%
electrical properties
14%
temperature
14%
output
13%
annealing
13%
continuous radiation
13%
conduction
12%
slopes
12%
phthalates
11%
lasing
11%
energy
11%
resonant tunneling
11%
quantum well lasers
11%
diamines
11%
antimony
11%
vapor phase epitaxy
10%
power efficiency
10%
Chemical Compounds
Quantum Dot
43%
Molecular Beam Epitaxy
38%
Tunneling
34%
Wavelength
19%
Photoluminescence
17%
Voltage
15%
Current Density
13%
Electrical Property
11%
Resistance
11%
Ambient Reaction Temperature
11%
Optical Property
10%
Compound Mobility
10%
Nitrogen
10%
Fermi Level
9%
Tunneling Current
9%
Pyramidal Crystal
9%
Spectroscopy
9%
Chemical Vapour Deposition
8%
Ground State
8%
Doping Material
8%
Electron Transport
7%
Threading Dislocation
7%
Electron Particle
7%
Annealing
7%
Negative Resistance
7%
Surface
7%
Energy
6%
Density of State
6%
Metallorganic Chemical Vapour Deposition
6%
Length
6%
Vapor Phase Epitaxy
6%
Hexagonal Space Group
6%
Hole Concentration
6%
Buffer Solution
6%
Valence Band
6%
Band Gap
6%
Pressure
6%
Reaction Activation Energy
6%
Band Bending
6%
Electron Trap
5%
Electron Emission
5%
1,3,5-triazine
5%
Etching
5%
Transconductance
5%
Tungsten Oxide
5%
Molecular Beam
5%
