每年專案
個人檔案
研究專長
Molecular Beam Epitaxial Growth, Electrical Characterizations of III-V Compound Semiconductor Nanostructures, Strain Relaxation in InAs Quantum Dots
經歷
1989-1991 美國貝爾研究室材料實驗室博士後研究
1991-1996 國立交通大學電子物理副教授
1996-迄今 國立交通大學電子物理教授
2006-2009 國立交通大學電子物理系主任
教育/學術資格
PhD, 電機工程, State University of New York at Buffalo
外部位置
指紋
- 1 類似的個人檔案
專案
- 9 已完成
-
應力鬆馳砷化銦量子點應用在光學調控低通濾波器內電容器之研究
Chen, J.-F. (PI)
1/08/15 → 31/07/16
研究計畫: Other Government Ministry Institute
-
深層能階的載子補捉對於光學引發砷化銦量子點內電荷儲存之影響
Chen, J.-F. (PI)
1/08/14 → 31/07/15
研究計畫: Other Government Ministry Institute
-
雙模態砷化銦量子點間載子傳輸機制與應力鬆弛發生雙模態之探討
Chen, J.-F. (PI)
1/08/13 → 31/07/14
研究計畫: Other Government Ministry Institute
-
雙模態砷化銦量子點間載子傳輸機制與應力鬆弛發生雙模態之探討
Chen, J.-F. (PI)
1/08/12 → 31/07/13
研究計畫: Other Government Ministry Institute
-
雙模態砷化銦量子點間載子傳輸機制與應力鬆弛發生雙模態之探討
Chen, J.-F. (PI)
1/08/11 → 31/07/12
研究計畫: Other Government Ministry Institute
-
Sweeping-rate-dependent photocurrent of GaAs Schottky diode with strain relaxed InAs quantum dots
Wang, J. F., Lin, C. L., Pan, S. S., Huang, C.-H., Hsieh, C. S. & Chen, J.-F., 1 4月 2015, 於: Japanese journal of applied physics. 54, 4, 04DF04.研究成果: Article › 同行評審
-
Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer
Yu, T. Y., Pan, F.-M., Chang, C. Y., Hu, T., Chen, J.-F., Wang, J. F., Lin, C. L., Chen, T. H. & Chen, T. M., 1 1月 2014, 於: Current Applied Physics. 14, 5, p. 659-664 6 p.研究成果: Article › 同行評審
10 引文 斯高帕斯(Scopus) -
Effects of cross-sectional area on the tunneling-junction array in octahedral PbSe colloidal-nanocrystal solids
Chiu, S. C., Jhang, J. S., Chen, J.-F., Fang, J. & Jian, W.-B., 14 10月 2013, 於: Physical Chemistry Chemical Physics. 15, 38, p. 16127-16131 5 p.研究成果: Article › 同行評審
6 引文 斯高帕斯(Scopus) -
Exploration of water jet generated by Qswitched laser induced water breakdown with different depths beneath a flat free surface
Chen, R. C. C., Yu, Y. T., Su, K.-W., Chen, J.-F. & Chen, Y.-F., 14 1月 2013, 於: Optics Express. 21, 1, p. 445-453 9 p.研究成果: Article › 同行評審
開啟存取33 引文 斯高帕斯(Scopus) -
Hole injection and electron overflow improvement in 365nm light-emitting diodes by band-engineering electron blocking layer
Fu, Y. K., Lu, Y. H., Xuan, R., Chen, J.-F. & Su, Y. K., 8月 2013, 於: Japanese Journal of Applied Physics. 52, 8 PART 2, 08JK05.研究成果: Article › 同行評審
6 引文 斯高帕斯(Scopus)