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查看斯高帕斯 (Scopus) 概要
孫 元成
院長
產學創新研究學院
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1982 …
2025
每年研究成果
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指紋
網路
研究成果
(181)
類似的個人檔案
(6)
指紋
查看啟用 Jack Yuan-Chen Sun 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
Transistor
95%
SiGe
90%
CMOS Technology
89%
Self-aligned
81%
High Performance
80%
Bipolar Transistor
69%
Bipolar Technology
66%
Epitaxial
53%
Polysilicon
49%
Polysilicon Emitter
48%
Current Gain
37%
Gate Delay
35%
Channel Length
34%
MOSFET
30%
Liquid Nitrogen Temperature
29%
Foundry
29%
Cut-off Frequency
29%
Device Characteristics
26%
Profile Design
26%
Heterojunction Bipolar Transistors
25%
Sheet Resistance
24%
CMOS Devices
24%
Short Channel Effects
23%
Ring Oscillator
22%
Boron
21%
Oxides
21%
Epitaxial Si
21%
Gate Oxide
21%
Emitter-coupled Logic
21%
System-on-chip
20%
Ion Implantation
20%
Device Design
20%
BiCMOS Technology
19%
Room Temperature
19%
Fmax
19%
TiSi2
18%
Floating Body
18%
Avalanche
18%
Annealing
18%
Polysilicon Gate
18%
Low Temperature
18%
Emitter Windows
18%
Low Operating Temperature
18%
Foundry Technology
18%
Intrinsic Basis
17%
RF CMOS
17%
Gate Dielectric
17%
Inductors
17%
Emitter Width
17%
Nitrided Oxide
17%
Engineering
Polysilicon
100%
Bipolar Transistor
87%
Emitter Coupled Logic Circuits
61%
Metal-Oxide-Semiconductor Field-Effect Transistor
54%
Current Gain
49%
Low-Temperature
48%
Gate Oxide
46%
Cutoff Frequency
45%
Channel Length
41%
System-on-Chip
36%
Heterojunctions
34%
Silicon on Insulator
32%
Arsenic
30%
Sheet Resistance
26%
Interconnects
26%
Room Temperature
25%
Oxide Thickness
24%
Q Factor
23%
Oscillator
23%
Silicon Dioxide
22%
Floating Body
22%
Series Resistance
22%
Power Supply
20%
Experimental Result
19%
Free Field
19%
Operation Temperature
18%
Gate Length
18%
Dopants
18%
Breakdown Voltage
18%
Atomic Hydrogen
17%
Process Development
17%
Supply Voltage
17%
Current-Voltage Characteristic
16%
Electron Injection
16%
Passivation
16%
Rapid Thermal Annealing
16%
Transients
15%
Device Performance
15%
Gate Dielectric
15%
Circuit Design
15%
Nitride
14%
Interface State
14%
Current Drive
14%
Lithography
14%
Engineering
13%
Optical Lithography
13%
Device Structure
13%
Current Drain
13%
Fits and Tolerances
12%
Dangling Bond
12%
