游 宏偉

研究成果

每年研究成果 2006 2014 2023

• 32 Article
• 9 Conference contribution
• 2 Conference article

每年研究成果

每年研究成果

搜尋結果

• 2023

  Role of Boron in Assisting the Super-Enhancement of Emissions from Carbon-Implanted Silicon

  Abdul Razak, N. E., Dee, C. F., Madhuku, M., Ahmad, I., Chang, E. Y., Yu, H. W., Majlis, B. Y. & Berhanuddin, D. D., 3月 2023, 於: Materials. 16, 5, 2070.

  研究成果: Article › 同行評審

  開啟存取

  • Boron 100%
  • Boron Atom 76%
  • boron 75%
  • Silicon 69%
  • Carbon 66%
• 2022

  A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT

  Yang, C. Y., Chung, C. H., Yu, W., Ma, C. J., Wu, S. R., Dixit, A., Lee, C. T. & Chang, E. Y., 1 6月 2022, 於: IEEE Transactions on Device and Materials Reliability. 22, 2, p. 276-281 6 p.

  研究成果: Article › 同行評審

  • Management information systems 100%
  • High electron mobility transistors 93%
  • Irradiation 82%
  • Power HEMT 67%
  • Dose 62%
  1 引文 斯高帕斯（Scopus）
• 2021

  Effect of Flow Rate Scaling on SAE-InAs Crystal Phase and Integration of Self-Catalyzed InAs/InSb Heterostructure Nanowires on Si (111) Substrate by MOCVD

  Anandan, D., Yu, H-W., Lee, C. T., Dee, C. F., Hamzah, A. A. & Chang, E. Y., 19 7月 2021, 於: ECS Journal of Solid State Science and Technology. 10, 7, p. 1-7 7 p., 071011.

  研究成果: Article › 同行評審

  • Metallorganic chemical vapor deposition 100%
  • Heterojunctions 82%
  • Nanowires 78%
  • Crystals 62%
  • Crystal structure 58%

• Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD

  Anandan, D., Yu, H. W., Chang, E. Y., Singh, S. K., Nagarajan, V., Lee, C. T., Dee, C. F. & Ueda, D., 15 11月 2021, 於: Materials Science in Semiconductor Processing. 135, 106103.

  研究成果: Article › 同行評審

  • Nanopillars 100%
  • Metallorganic chemical vapor deposition 91%
  • Nanopillar 83%
  • Epitaxial growth 81%
  • Heterojunctions 75%
• 2020

  Small signal model and RF performance analysis of InAs/GaSb hetero-junction tunneling field effect transistor

  Singh, S. K., Kaushik, P. K., Kakkerla, R. K., Gupta, A., Anandan, D., Nagarajan, V., Yu, H-W. & Chang, E. Y., 9月 2020, 於: Engineering Research Express. 2, 3, p. 1-11 11 p., 035004.

  研究成果: Article › 同行評審

  • Tunnel field effect transistors 100%
  • Field effect transistors 73%
  • Heterojunctions 71%
  • Inversion layers 23%
  • Electric potential 14%

• Titanium dioxide-mediated resistive nanobiosensor for E. coli O157: H7

  Nadzirah, S., Hashim, U., Gopinath, S. C. B., Parmin, N. A., Hamzah, A. A., Yu, H-W. & Dee, C. F., 17 3月 2020, 於: Microchimica Acta. 187, 4, p. 1-9 9 p., 235.

  研究成果: Article › 同行評審

  • DNA Probe 100%
  • Titanium Dioxide Nanoparticle 58%
  • Sol Gel Process 35%
  • Flow 28%
  • Electron Particle 23%
  14 引文 斯高帕斯（Scopus）
• 2017

  Effects of NH₃ Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

  Lumbantoruan, F. J., Wong, Y. Y., Huang, W. C., Yu, H. W. & Chang, E. Y., 1 10月 2017, 於: Journal of Electronic Materials. 46, 10, p. 6104-6110 7 p.

  研究成果: Article › 同行評審

  • Heterojunctions 100%
  • High electron mobility transistors 88%
  • barrier layers 82%
  • high electron mobility transistors 79%
  • Materials properties 64%
  5 引文 斯高帕斯（Scopus）

• Growth of high-quality In_0.28Ga_0.72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal-oxide-semiconductor applications

  Huynh, S. H., Ha, M. T. H., Do, H. B., Nguyen, T. A., Yu, H. W., Luc, Q. H. & Chang, E. Y., 1 7月 2017, 於: Applied Physics Express. 10, 7, p. 1-4 4 p., 075505.

  研究成果: Article › 同行評審

  • Valence bands 100%
  • Conduction bands 94%
  • Epilayers 94%
  • Metallorganic chemical vapor deposition 87%
  • Heterojunctions 72%
  5 引文 斯高帕斯（Scopus）

• Impact of material properties and device architecture on the device performance for a gate all around nanowire tunneling FET

  Singh, S. K., Gupta, A., Yu, H. W., Nagarajan, V., Anandan, D., Kakkerla, R. K. & Chang, E. Y., 1 11月 2017, 於: Materials Research Express. 4, 11, p. 1-7 7 p., 114002.

  研究成果: Article › 同行評審

  • Interface Trap 100%
  • Nanowires 74%
  • Field effect transistors 64%
  • Tunneling 61%
  • Nanowire 52%
  5 引文 斯高帕斯（Scopus）
• 2016

  Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched In_xGa_1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition

  Huynh, S. H., Ha, M. T. H., Do, H. B., Luc, Q. H., Yu, H. W. & Chang, E. Y., 5 9月 2016, 於: Applied Physics Letters. 109, 10, 102107.

  研究成果: Article › 同行評審

  • metalorganic chemical vapor deposition 100%
  • indium 12%
  • temperature 11%
  • surface roughness 11%
  • vapors 9%
  12 引文 斯高帕斯（Scopus）
• 2015

  Broadb and antireflection sub-wavelength structure of InGaP/InGaAs/Ge triple junction solar cell with composition-graded SiNx

  Chung, C. C., Lo, H. C., Lin, Y. K., Yu, H. W., Tran, B. T., Lin, K. L., Chen, Y. C., Quan, N. H., Chang, E. Y. & Tseng, Y. C., 1 5月 2015, 於: Materials Research Express. 2, 5, 055505.

  研究成果: Article › 同行評審

  • Solar cells 100%
  • Wavelength 83%
  • Solar Cell 81%
  • Coatings 70%
  • Plasma enhanced chemical vapor deposition 67%
  3 引文 斯高帕斯（Scopus）
• 2014

  Control of metamorphic buffer structure and device performance of In_xGa_1-xAs epitaxial layers fabricated by metal organic chemical vapor deposition

  Nguyen, H. Q., Yu, H. W., Luc, Q. H., Tang, Y. Z., Phan, V. T. H., Hsu, C. H., Chang, E. Y. & Tseng, Y. C., 3 12月 2014, 於: Nanotechnology. 25, 48, 485205.

  研究成果: Article › 同行評審

  • Organic chemicals 100%
  • Epitaxial films 98%
  • Epitaxial Film 92%
  • Chemical vapor deposition 75%
  • Buffer Solution 42%
  4 引文 斯高帕斯（Scopus）

• Direct growth of a 40 nm InAs thin film on a GaAs/Ge heterostructure by metalorganic chemical vapor deposition

  Yu, H. W., Wang, T. M., Nguyen, H. Q., Wong, Y. Y., Tu, Y. Y. & Chang, E. Y., 1 9月 2014, 於: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32, 5, 050601.

  研究成果: Article › 同行評審

  • Metallorganic chemical vapor deposition 100%
  • Heterojunctions 82%
  • metalorganic chemical vapor deposition 60%
  • Thin films 59%
  • Misfit Dislocation 58%
  4 引文 斯高帕斯（Scopus）

• Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

  Wong, Y. Y., Chang, E. Y., Huang, W. C., Lin, Y. C., Tu, Y. Y., Chen, K. W. & Yu, H. W., 1 9月 2014, 於: Applied Physics Express. 7, 9, 095502.

  研究成果: Article › 同行評審

  • High electron mobility transistors 100%
  • Electric properties 92%
  • high electron mobility transistors 89%
  • Materials properties 72%
  • electrical properties 63%
  8 引文 斯高帕斯（Scopus）

• Efficiency improvement of InGaP/GaAs/Ge solar cells by hydrothermal-deposited ZnO nanotube structure

  Chung, C. C., Tran, B. T., Lin, K. L., Ho, Y. T., Yu, H. W., Quan, N. H. & Chang, E. Y., 1 1月 2014, 於: Nanoscale Research Letters. 9, 1, p. 1-5 5 p.

  研究成果: Article › 同行評審

  開啟存取

  • Zinc Oxide Nanotube 100%
  • Zinc oxide 75%
  • Nanotubes 72%
  • Antireflection coatings 61%
  • Solar cells 60%
  9 引文 斯高帕斯（Scopus）

• Study of the Growth and Dislocation Blocking Mechanisms in In_xGa_1-xAs Buffer Layer for Growing High-Quality In_0.5Ga_0.5P, In_0.3Ga_0.7As, and In_0.52Ga_0.48As on Misoriented GaAs Substrate for Inverted Metamorphic Multijunction Solar Cell Application

  Nguyen, H. Q., Yu, H. W., Hsu, C. H., Phan, V. T. H. & Chang, E. Y., 2014, 於: Energy Harvesting and Systems. 1, 3, p. 157-165 9 p.

  研究成果: Article › 同行評審

  • Threading Dislocation 100%
  • Multi-junction solar cells 86%
  • Growth temperature 85%
  • Buffer layers 75%
  • Epilayers 60%
  1 引文 斯高帕斯（Scopus）

• The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency

  Chung, C. C., Tran, B. T., Han, H. V., Ho, Y. T., Yu, H. W., Lin, K. L., Nguyen, H. Q., Yu, P., Kuo, H. C. & Chang, E. Y., 1 1月 2014, 於: Electronic Materials Letters. 10, 2, p. 457-460 4 p.

  研究成果: Article › 同行評審

  • Solar cells 100%
  • Quantum Dot 84%
  • Solar Cell 81%
  • Conversion efficiency 66%
  • Sun 32%
  7 引文 斯高帕斯（Scopus）

• The growth of pine-leaf-like hierarchical SnO₂ nanostructures

  Dee, C. F., Tiong, T. Y., Varghese, B., Sow, C. H., Wong, Y. Y., Ahmad, I., Husnain, G., Yi-Chang, E., Hsiao, Y. L., Yu, H. W., Nguyen, H. Q., Salleh, M. M. & Majlis, B. Y., 1 1月 2014, 於: Journal of Experimental Nanoscience. 9, 9, p. 913-921 9 p.

  研究成果: Article › 同行評審

  • Nanowires 100%
  • Nanostructures 98%
  • Nanowire 69%
  • Vapors 54%
  • Nanomaterial 50%
  3 引文 斯高帕斯（Scopus）

• Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

  Chiu, Y. S., Lin, T. M., Nguyen, H. Q., Weng, Y. C., Nguyen, C. L., Lin, Y. C., Yu, H. W., Yi Chang, E. & Lee, C. T., 1 1月 2014, 於: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32, 1, 011216.

  研究成果: Article › 同行評審

  • Ohmic contacts 100%
  • Contact Resistance 83%
  • Electron Mobility 79%
  • High electron mobility transistors 76%
  • Contact resistance 76%
  15 引文 斯高帕斯（Scopus）
• 2013

  In_0.5Ga_0.5As-based metal-oxide-semiconductor capacitor on GaAs substrate using metal-organic chemical vapor deposition

  Nguyen, H. Q., Trinh, H. D., Chang, E. Y., Lee, C. T., Wang, S. Y., Yu, H. W., Hsu, C. H. & Nguyen, C. L., 1 1月 2013, 於: IEEE Transactions on Electron Devices. 60, 1, p. 235-240 6 p., 6376156.

  研究成果: Article › 同行評審

  • Organic chemicals 100%
  • Oxide semiconductors 76%
  • Chemical vapor deposition 75%
  • Capacitor 66%
  • Conductance 62%
  6 引文 斯高帕斯（Scopus）
• 2012

  Fabrication and characterization of n-In _0.4Ga _0.6N/p-Si solar cell

  Tran, B. T., Chang, E. Y., Trinh, H. D., Lee, C. T., Sahoo, K. C., Lin, K. L., Huang, M. C., Yu, H. W., Luong, T. T., Chung, C. C. & Nguyen, C. L., 1 7月 2012, 於: Solar Energy Materials and Solar Cells. 102, p. 208-211 4 p.

  研究成果: Article › 同行評審

  • Solar cells 100%
  • Solar Cell 81%
  • Fabrication 69%
  • Short Circuit 28%
  • Short circuit currents 26%
  30 引文 斯高帕斯（Scopus）

• InGaP/GaAs dual-junction solar cell with AlGaAs/GaAs tunnel diode grown on 10° off misoriented GaAs substrate

  Yu, H. W., Chung, C. C., Wang, C. T., Nguyen, H. Q., Tran, B. T., Lin, K. L., Dee, C. F., Majlis, B. Y. & Chang, E. Y., 1 8月 2012, 於: Japanese Journal of Applied Physics. 51, 8 PART 1, 080208.

  研究成果: Article › 同行評審

  • Tunnel diodes 100%
  • tunnel diodes 87%
  • Solar cells 68%
  • aluminum gallium arsenides 60%
  • solar cells 47%
  4 引文 斯高帕斯（Scopus）

• Threading dislocation blocking in metamorphic InGaAs/GaAs for growing high-quality In _0.5Ga _0.5As and In _0.3Ga _0.7As on GaAs substrate by using metal organic chemical vapor deposition

  Nguyen, H. Q., Chang, E. Y., Yu, H. W., Trinh, H. D., Dee, C. F., Wong, Y. Y., Hsu, C. H., Tran, B. T. & Chung, C. C., 1 5月 2012, 於: Applied Physics Express. 5, 5, 055503.

  研究成果: Article › 同行評審

  • Epilayers 100%
  • Organic chemicals 90%
  • Chemical vapor deposition 68%
  • metalorganic chemical vapor deposition 55%
  • Substrates 41%
  10 引文 斯高帕斯（Scopus）
• 2011

  Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy

  Yu, H. W., Chang, E. Y., Yamamoto, Y., Tillack, B., Wang, W. C., Kuo, C. I., Wong, Y. Y. & Nguyen, H. Q., 24 10月 2011, 於: Applied Physics Letters. 99, 17, 171908.

  研究成果: Article › 同行評審

  • arsenic 100%
  • vapor phase epitaxy 96%
  • epitaxy 91%
  • antiphase boundaries 37%
  • temperature 27%
  12 引文 斯高帕斯（Scopus）

• High-quality 1 eV In_0.3Ga_0.7As on GaAs substrate by metalorganic chemical vapor deposition for inverted metamorphic solar cell application

  Nguyen, H. Q., Chang, E. Y., Yu, H. W., Lin, K. L. & Chung, C. C., 1 7月 2011, 於: Applied Physics Express. 4, 7, 075501.

  研究成果: Article › 同行評審

  • Metallorganic chemical vapor deposition 100%
  • Buffer layers 90%
  • Solar cells 67%
  • metalorganic chemical vapor deposition 60%
  • Epilayers 54%
  10 引文 斯高帕斯（Scopus）
• 2010

  Effect of substrate misorientation on the material properties of GaAs/ Al_0.3Ga_0.7As tunnel diodes

  Yu, H. W., Chang, E. Y., Nguyen, H. Q., Chang, J. T., Chung, C. C., Kuo, C. I., Wong, Y. Y. & Wang, W. C., 6 12月 2010, 於: Applied Physics Letters. 97, 23, 231903.

  研究成果: Article › 同行評審

  • tunnel diodes 100%
  • misalignment 72%
  • aluminum gallium arsenides 52%
  • surface roughness 31%
  • oxygen 11%
  8 引文 斯高帕斯（Scopus）
• 2009

  Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxy

  Chen, K. M., Huang, H. H., Kuo, Y. L., Wu, P. L., Chu, T. L., Yu, H. W. & Lee, W. I., 1 5月 2009, 於: Journal of Crystal Growth. 311, 10, p. 3037-3039 3 p.

  研究成果: Article › 同行評審

  • Vapor phase epitaxy 100%
  • Vapor Phase Epitaxy 89%
  • Bending (forming) 78%
  • Hydrides 71%
  • vapor phase epitaxy 58%
  8 引文 斯高帕斯（Scopus）
• 2008

  A novel technique for growing crack-free GaN thick film by hydride vapor phase epitaxy

  Huang, H. H., Chen, K. M., Tu, L. W., Chu, T. L., Wu, P. L., Yu, H. W., Chiang, C. H. & Lee, W. I., 14 11月 2008, 於: Japanese Journal of Applied Physics. 47, 11, p. 8394-8396 3 p.

  研究成果: Article › 同行評審

  • Vapor phase epitaxy 100%
  • Sapphire 75%
  • Hydrides 71%
  • Thick films 69%
  • vapor phase epitaxy 58%
  6 引文 斯高帕斯（Scopus）

• Rapid and homogeneous dispersion of Pt catalyst particles on multi-walled carbon nanotubes by temperature-controlled microwave polyol method

  Chen, C. M., Chen, M., Yu, H. W., Lu, S. C. & Chen, C. F., 18 4月 2008, 於: Japanese journal of applied physics. 47, 4 PART 1, p. 2324-2329 6 p.

  研究成果: Article › 同行評審

  • Polyols 100%
  • Sodium dodecyl sulfate 78%
  • Carbon nanotubes 73%
  • sodium sulfates 67%
  • catalysts 64%
  8 引文 斯高帕斯（Scopus）
• 2007

  Effect of purification treatment on adsorption characteristics of carbon nanotubes

  Chen, M., Yu, H. W., Chen, J. H. & Koo, H. S., 4月 2007, 於: Diamond and Related Materials. 16, 4-7 SPEC. ISS., p. 1110-1115 6 p.

  研究成果: Article › 同行評審

  • Purification 100%
  • Carbon nanotubes 93%
  • Adsorption 85%
  • Carbon Nanotube 64%
  • Microwaves 48%
  50 引文 斯高帕斯（Scopus）

• Electroluminescent characteristics of organic light-emitting diodes with doped carbon nanotubes

  Koo, H. S., Chen, M., Yu, H. W., Kwon, S. K., Lee, Y. K. & Jang, J., 4月 2007, 於: Diamond and Related Materials. 16, 4-7 SPEC. ISS., p. 1162-1166 5 p.

  研究成果: Article › 同行評審

  • Organic light emitting diodes (OLED) 100%
  • Carbon nanotubes 80%
  • Electroluminescence 78%
  • Light emitting diodes 59%
  • Carbon Nanotube 55%
  11 引文 斯高帕斯（Scopus）

• Influence of CO₂ and N₂ on the growth of carbon nanotubes by using thermal chemical vapor deposition

  Chen, M., Kao, Y. C., Yu, H. W., Lu, S. C. & Koo, H. S., 3 12月 2007, 於: Thin Solid Films. 516, 2-4, p. 277-283 7 p.

  研究成果: Article › 同行評審

  • Chemical vapor deposition 100%
  • Carbon nanotubes 90%
  • carbon nanotubes 74%
  • vapor deposition 65%
  • Carbon Nanotube 62%
  6 引文 斯高帕斯（Scopus）