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查看斯高帕斯 (Scopus) 概要
游 宏偉
專案副研究員
國際半導體產業學院
https://orcid.org/0000-0002-0063-4359
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304
引文
10
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
103
引文
6
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
15
引文
1
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2006
2023
每年研究成果
概覽
指紋
網路
研究成果
(43)
類似的個人檔案
(6)
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指紋
查看啟用 Hung-Wei Yu 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering & Materials Science
Substrates
100%
Metallorganic chemical vapor deposition
99%
Solar cells
91%
Heterojunctions
83%
Chemical vapor deposition
74%
Organic chemicals
61%
Carbon nanotubes
58%
Buffer layers
56%
High electron mobility transistors
53%
Growth temperature
52%
Epilayers
50%
Vapor phase epitaxy
49%
Metals
46%
Nanowires
45%
Epitaxial growth
45%
Oxide semiconductors
36%
Hydrides
34%
Epitaxial films
31%
Transmission electron microscopy
30%
Indium
30%
Tunnel diodes
28%
Microwaves
25%
Crystals
25%
Surface morphology
25%
Valence bands
25%
Fermi level
24%
Conversion efficiency
24%
Nanotubes
23%
Materials properties
23%
Thick films
22%
Sapphire
21%
Purification
20%
Photoluminescence
20%
Field effect transistors
19%
Dislocations (crystals)
19%
Flow rate
19%
Direct methanol fuel cells (DMFC)
18%
Tunnel field effect transistors
18%
Energy gap
17%
Sodium dodecyl sulfate
17%
Capacitors
17%
Carbon
17%
Catalysts
16%
Polyols
16%
Platinum
16%
Electrodes
15%
Nanopillars
15%
Conduction bands
15%
Fabrication
15%
Nanoparticles
15%
Chemical Compounds
Solar Cell
56%
Threading Dislocation
31%
Epitaxial Growth
29%
Vapor Phase Epitaxy
29%
Interface Trap
28%
Epitaxial Film
26%
Nanowire
24%
Electron Mobility
22%
Carbon Nanotube
21%
Chemical Vapour Deposition
21%
Misfit Dislocation
18%
Flow Kinetics
17%
Trap Density Measurement
16%
Zinc Oxide Nanotube
16%
Buffer Solution
16%
Hydride
15%
Liquid Film
13%
Nanopillar
13%
Capacitor
12%
Purification
12%
Carbon Atom
12%
Chemical Deposition
12%
Conductance
11%
Contact Resistance
11%
Surface
11%
Multi Walled Nanotube
10%
Silicon Carbide
10%
Coating Agent
10%
Electroluminescence
9%
Tunneling
9%
Field Effect
9%
Quantum Dot
8%
Transmission Electron Microscopy
8%
Boron Atom
8%
Nanotube
7%
Vacuum
7%
Atomic Force Microscopy
7%
Dose
7%
Crystallinity
7%
DNA Probe
7%
Monolayer
6%
Dislocation Loop
6%
Molecular Beam Epitaxy
6%
Metal
6%
Gas
6%
Strain Energy
5%
Nanomaterial
5%
Dielectric Constant
5%
Plasma Enhanced Chemical Vapour Deposition
5%
Energy
5%
Physics & Astronomy
metalorganic chemical vapor deposition
52%
vapor phase epitaxy
38%
high electron mobility transistors
28%
hydrides
28%
solar cells
27%
epitaxy
25%
tunnel diodes
25%
carbon nanotubes
23%
thick films
17%
aluminum gallium arsenides
15%
carbon
15%
vapor deposition
14%
sapphire
13%
flow velocity
13%
indium
12%
microwaves
12%
catalysts
12%
buffers
11%
arsenic
11%
transmission electron microscopy
11%
temperature
10%
purification
10%
barrier layers
10%
contact resistance
9%
wurtzite
9%
misalignment
9%
sodium sulfates
9%
zinc oxides
8%
nanotubes
8%
surface roughness
8%
CMOS
8%
cracks
8%
electric contacts
8%
metals
8%
fuel cells
8%
boron
7%
conduction bands
7%
photoluminescence
7%
antireflection coatings
7%
x rays
6%
electrical properties
6%
valence
6%
platinum
6%
impurities
6%
thermal stresses
6%
augmentation
5%
nanoparticles
5%
lasers
5%
roughness
5%
gas mixtures
5%
