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查看斯高帕斯 (Scopus) 概要
游 宏偉
專案副研究員
國際半導體產業學院
https://orcid.org/0000-0002-0063-4359
h-index
h10-index
h5-index
311
引文
10
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
103
引文
6
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
18
引文
2
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2006
2024
每年研究成果
概覽
指紋
網路
研究成果
(45)
類似的個人檔案
(6)
指紋
查看啟用 Hung-Wei Yu 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
Gallium Arsenide
100%
Metal-organic Chemical Vapor Deposition (MOCVD)
94%
GaAs Substrate
80%
InGaP
53%
InGaAs
48%
Material Properties
32%
GaN HEMT
32%
Threading Dislocation
32%
Carbon Nanotubes
31%
Heterostructure
30%
Triple-junction Solar Cell
29%
Epilayer
29%
Growth Temperature
28%
Multi-walled Carbon Nanotubes (MWCNTs)
27%
AlGaN-GaN
27%
Buffer Layer
26%
Tunnel Diode
24%
Hydride Vapor Phase Epitaxy
24%
Solar Cell
23%
GaN Films
22%
V(III)
22%
Misoriented
21%
Smooth Surface
21%
Surface Morphology
20%
InxGa1-xAs
20%
Indium
19%
Free-standing GaN
19%
Selective Area Epitaxy
19%
Wurtzite
19%
Device Performance
18%
Metal-oxide-semiconductor Capacitor (MOSCAP)
18%
Step Graded
18%
Conversion Efficiency
17%
Thermal Chemical Vapor Deposition
17%
Si(111) Substrate
17%
AlGaAs
17%
Transmission Electron Microscopy
16%
Growth Form
16%
Ge Solar Cells
16%
Solar Cell Efficiency
16%
Thick Film
16%
Nanowires
16%
GaSb
16%
GaAs Nanowires
16%
Crystal Quality
16%
Solar Cell Applications
16%
Antireflection
14%
Barrier Layer
13%
Antireflection Coating
13%
Catalyst Particle
13%
Engineering
Gallium Arsenide
93%
Solar Cell
66%
Gaas Substrate
63%
Chemical Vapor Deposition
44%
Vapor Deposition
44%
Junction Solar Cell
44%
Indium Gallium Arsenide
42%
Heterojunctions
37%
Threading Dislocation
33%
Dislocation Density
27%
Metal Organic Chemical Vapor Deposition
25%
Tunnel Diode
24%
Nanowires
24%
Smooth Surface
19%
Buffer Layer
19%
Surface Morphology
19%
Carbon Nanotube
19%
Device Performance
18%
Metal Oxide Semiconductor
18%
Tunnel Construction
16%
Nanotube
16%
Conversion Efficiency
15%
Aluminium Gallium Arsenide
14%
Transmissions
13%
Crystal Quality
13%
Barrier Layer
13%
Flow Rate
13%
Interface Trap
12%
Growth Temperature
12%
Sapphire Substrate
10%
Thin Films
10%
Electrical Performance
10%
Atomic Force Microscopy
10%
Epitaxial Layer
9%
Growth Parameter
9%
Arsenic
9%
Gamma-Ray Irradiation
8%
Nanobiosensor
8%
Power Device
8%
Radio Frequency
8%
Growth Mode
8%
Cap Layer
8%
Quantum Dot
8%
Si-Ge Substrate
8%
Patterning Technique
8%
Thermal Stress
8%
Chemical Deposition
8%
Field Effect Transistor
8%
Band Edge
8%
Multi-Junction III-V Solar Cells
8%
Material Science
Gallium Arsenide
95%
Chemical Vapor Deposition
46%
Heterojunction
43%
Density
39%
Film
35%
Carbon Nanotube
32%
Solar Cell
32%
Epilayers
29%
Buffer Layer
29%
Materials Property
27%
Transistor
26%
Indium Gallium Arsenide
25%
Metal-Organic Chemical Vapor Deposition
25%
Electron Mobility
24%
Nanowire
24%
Surface Morphology
24%
Aluminum Nitride
19%
Oxide Semiconductor
18%
Capacitor
18%
Metal Oxide
18%
Indium
17%
Vapor Phase Epitaxy
16%
Hydride
16%
Thick Films
16%
Field Effect Transistor
16%
Nanoparticle
15%
Dislocation (Crystal)
14%
Transmission Electron Microscopy
13%
Sapphire
12%
Platinum
12%
Monolayers
12%
Aluminium Gallium Arsenide
11%
Photoluminescence
10%
Polyol
10%
Carrier Concentration
10%
Sodium Dodecyl Sulfate
10%
Thin Films
9%
Epitaxial Layer
8%
Silicon Carbide
8%
Boron
8%
Nanocrystalline Material
8%
Complementary Metal-Oxide-Semiconductor Device
8%
Contact Resistance
8%
Permittivity
8%
State-of-Charge
8%
Nitride Compound
8%
Titanium Dioxide
8%
Thermal Chemical Vapor Deposition
8%
Light-Emitting Diode
8%
Band Offset
8%
