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國立陽明交通大學研發優勢分析平台 首頁
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查看斯高帕斯 (Scopus) 概要
尤 信介
副教授
光電系統研究所
h-index
h10-index
h5-index
1235
引文
20
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
388
引文
12
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
84
引文
6
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2002
2025
每年研究成果
概覽
指紋
網路
計畫
(5)
研究成果
(91)
類似的個人檔案
(6)
指紋
查看啟用 Hsin-Chieh Yu 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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Keyphrases
Vertical-cavity Surface-emitting Laser (VCSEL)
100%
Oxides
30%
Gallium Arsenide
29%
Quantum Dots
29%
Power Output
26%
Quantum Dot Lasers
23%
Photonic Crystal
20%
Quantum Dot Light-emitting Diodes
18%
Proton
18%
InGaAsN
18%
InGaAs
17%
Metal-organic Chemical Vapor Deposition (MOCVD)
16%
Room Temperature
16%
Metal Organic Vapor Phase Epitaxy (MOVPE)
13%
GaAs Substrate
13%
Fiber Optic Applications
12%
Slope Efficiency
12%
GaAsSb/GaAs Quantum Wells
11%
Photodetector
11%
Lasing Wavelength
10%
High Thermal Stability
10%
Highly Strained
10%
Side-mode Suppression Ratio
10%
GaAs Quantum Well
10%
Threshold Current Density
10%
Active Regions
9%
Eye Diagram
9%
High Temperature
9%
10Gbps
9%
Threshold Current
8%
InGaAs Quantum Dots
8%
Molecular Beam Epitaxy
8%
Quantum Well
8%
UV Photodetector
8%
Current Density
7%
ZnO Nanorods
7%
Thick Shell
7%
Composition Gradient
7%
Light Injection
7%
Low-frequency Noise
7%
Poly(2-hydroxyethyl methacrylate)
7%
Low Threshold Voltage
7%
Memory Device
7%
Growth Temperature
7%
MSM Photodetector
7%
Green Emission
7%
Inga
7%
Al-doped ZnO Nanorods
7%
External Light
7%
Schottky Contact
7%
Physics
Surface Emitting Laser
93%
Quantum Dot
54%
Oxide
31%
Light Emitting Diode
29%
Photonic Crystal
29%
Quantum Wells
22%
ZnO Nanorods
21%
Quantum Well Lasers
21%
Photometer
20%
Molecular Beam Epitaxy
16%
Room Temperature
14%
Fiber Optics
12%
Lasing
12%
Nanoparticle
10%
Continuous Radiation
9%
Metalorganic Chemical Vapor Deposition
9%
Hydrothermal Synthesis
8%
Nanorod
8%
Field Emission
7%
Crystal
7%
Green Light
7%
Metasurface
7%
Bragg Reflector
7%
Dark Current
6%
Crystal Surface
5%
Vapor Phase Epitaxy
5%
Noise Spectra
5%
Laser Cavity
5%
Material Science
Quantum Dot
57%
Light-Emitting Diode
51%
Gallium Arsenide
38%
Oxide Compound
30%
ZnO
25%
Photosensor
21%
Density
20%
Indium Gallium Arsenide
19%
Nanorod
18%
Indium Tin Oxide
14%
Thin-Film Transistor
14%
Film
13%
Quantum Well
12%
Memory Effect
8%
Thermal Stability
7%
Indium
7%
Oxygen Vacancy
7%
Schottky Barrier
7%
Dielectric Material
7%
Chemical Vapor Deposition
7%
Capacitance
7%
Molecular Beam Epitaxy
7%
Polymer
7%
Annealing
7%
Hydrothermal Synthesis
6%
Gallium
6%
Current-Voltage Characteristic
5%
Electron Transfer
5%
Secondary Ion Mass Spectrometry
5%
Aluminium Gallium Arsenide
5%
