Horng-Chih Lin

2001

Conduction mechanisms for off-state leakage current of Schottky barrier thin-film transistors

Yeh, K. L., Lin, H-C., Huang, R. G., Tsai, R. W. & Huang, T. Y., 30 7月 2001, 於: Applied Physics Letters. 79, 5, p. 635-637 3 p.

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

New insights into breakdown modes and their evolution in ultra-thin gate oxide

Lin, H-C., Lee, D. Y., Lee, C. Y., Chao, T-S., Huang, T. Y. & Wang, T-H., 1 1月 2001, 於: International Symposium on VLSI Technology, Systems, and Applications, Proceedings. p. 37-40 4 p.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

Novel thin-film transistor with self-aligned field induced drain

Lin, H-C., Yu, C. M., Lin, C. Y., Yeh, K. L., Huang, T. Y. & Lei, T. F., 1 1月 2001, 於: IEEE Electron Device Letters. 22, 1, p. 26-28 3 p.

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide

Tsai, M. Y., Lin, H-C., Lee, D. Y. & Huang, T. Y., 1 7月 2001, 於: IEEE Electron Device Letters. 22, 7, p. 348-350 3 p.

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension

Lin, H-C., Yeh, K. L., Huang, R. G., Lin, C. Y. & Huang, T. Y., 1 4月 2001, 於: IEEE Electron Device Letters. 22, 4, p. 179-181 3 p.

研究成果: Article › 同行評審

40 引文斯高帕斯（Scopus）

2000

A novel implantless MOS thin-film transistor with simple processing, excellent performance and ambipolar operation capability

Lin, H-C., Lin, C. Y., Yeh, K. L., Huang, R. G., Wang, M. F., Yu, C. M., Huang, T. Y. & Sze, S. M., 1 1月 2000, 於: Technical Digest - International Electron Devices Meeting. p. 857-859 3 p.

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

Effect of polymer modification on microwave digestion efficiency, thermal stability and plasma etching resistance for the photoresist

Ko, F-H., Lu, J. K., Chu, T. C., Chou, C. T., Hsiao, L. T. & Lin, H-C., 1 1月 2000, 於: Journal of analytical atomic spectrometry. 15, 6, p. 715-720 6 p.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides

Chen, C. C., Lin, H-C., Chang, C. Y., Huang, T. Y., Chien, C-H. & Liang, M. S., 1 2月 2000, 於: Electrochemical and Solid-State Letters. 3, 2, p. 103-105 3 p.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Improved immunity to plasma damage in ultrathin nitrided oxides

Chen, C. C., Lin, H-C., Chang, C. Y., Liang, M. S., Chien, C-H., Hsien, S. K. & Huang, T. Y., 1 1月 2000, 於: IEEE Electron Device Letters. 21, 1, p. 15-17 3 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Improved ultrathin gate oxide integrity in p⁺-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation

Chen, C. C., Lin, H-C., Chang, C. Y., Huang, T. Y., Chien, C-H. & Liang, M. S., 1 6月 2000, 於: Electrochemical and Solid-State Letters. 3, 6, p. 290-292 3 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Plasma-induced charging damage in ultrathin (3-nm) gate oxides

Chen, C. C., Lin, H-C., Chang, C. Y., Liang, M. S., Chien, C-H., Hsien, S. K., Huang, T. Y. & Chao, T-S., 1 7月 2000, 於: IEEE Transactions on Electron Devices. 47, 7, p. 1355-1360 6 p.

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxides

Chen, C. C., Lin, H-C., Chang, C. Y., Chao, T-S., Huang, T. Y. & Liang, M. S., 8月 2000, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 39, 8, p. 4733-4737 5 p.

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

1999

Combined effects of nitrogen implantation at S/D extension and N ₂O oxide on 0.18 μm N- and P-metal oxide field effect transistors (MOSFETs)

Chao, T-S., Chang, S. J., Chien, C-H., Lin, H-C., Huang, T. Y. & Chang, C. Y., 1 12月 1999, 於: Japanese Journal of Applied Physics, Part 2: Letters. 38, 12 A

研究成果: Article › 同行評審

Highly (111) textured titanium nitride layers for sub-quarter-micrometer Al metallization

Wu, W. F., Lin, C-C., Huang, C. C., Lin, H-C., Chang, T. C., Yang, R. P. & Huang, T. Y., 1 7月 1999, 於: Electrochemical and Solid-State Letters. 2, 7, p. 342-344 3 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Oxide thickness dependence of plasma charging damage

Lin, H-C., Chen, C. C., Wang, M. F., Hsien, S. K., Chien, C-H., Huang, T. Y. & Chang, C. Y., 1 1月 1999, 於: Microelectronics Reliability. 39, 3, p. 357-364 8 p.

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

Reliability of ultrathin gate oxides for ULSI devices

Chang, C. Y., Chen, C. C., Lin, H-C., Liang, M. S., Chien, C-H. & Huang, T. Y., 1 1月 1999, 於: Microelectronics Reliability. 39, 5, p. 553-566 14 p.

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

Temperature-accelerated dielectric breakdown in ultrathin gate oxides

Chen, C. C., Chang, C. Y., Chien, C-H., Huang, T. Y., Lin, H-C. & Liang, M. S., 14 6月 1999, 於: Applied Physics Letters. 74, 24, p. 3708-3710 3 p.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

1998

A novel self-aligned T-shaped gate process for deep submicron Si MOSFET's fabrication

Lin, H-C., Lin, R., Wu, W. F., Yang, R. P., Tsai, M. S., Chao, T-S. & Huang, T. Y., 1 1月 1998, 於: IEEE Electron Device Letters. 19, 1, p. 26-28 3 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Characterization of plasma charging induced gate oxide damage during metal etching

Lin, H-C., Wang, M. F., Chien, C-H., Huang, T. Y. & Chang, C. Y., 1 5月 1998, 於: Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering. 22, 3, p. 416-424 9 p.

研究成果: Article › 同行評審

Effects of N ₂ O-annealed sacrificial oxide on the short-channel effects of nMOSFETs

Jong, F. C., Huang, T. Y., Chao, T-S., Lin, H-C., Wang, M. F. & Chang, C. Y., 19 2月 1998, 於: Electronics Letters. 34, 4, p. 404-406 3 p.

研究成果: Article › 同行評審

Improving radiation hardness of EEPROM/flash cell by N ₂ O annealing

Huang, T. Y., Jong, F. C., Chao, T-S., Lin, H-C., Leu, L. Y., Young, K., Lin, C. H. & Chiu, K. Y., 1 7月 1998, 於: IEEE Electron Device Letters. 19, 7, p. 256-258 3 p.

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

1997

A study on the radiation hardness of flash cell with horn-shaped floating-gate

Huang, T. Y., Jong, F. C., Chao, T-S., Lin, H-C., Leu, L. Y., Young, K., Lin, C. H. & Chiu, K. Y., 9月 1997, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 9 A, p. 5459-5463 5 p.

研究成果: Article › 同行評審

Effects of floating-gate doping concentration on flash cell performance

Huang, T. Y., Jong, F. C., Lin, H-C., Chao, T-S., Leu, L. Y., Young, K., Lin, C. H. & Chiu, K. Y., 8月 1997, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 8, p. 5063-5067 5 p.

研究成果: Article › 同行評審

Improved flash cell performance by N₂O annealing of interpoly oxide

Jong, F. C., Huang, T. Y., Chao, T-S., Lin, H-C., Leu, L. Y., Young, K., Lin, C. H. & Chiu, K. Y., 1 7月 1997, 於: IEEE Electron Device Letters. 18, 7, p. 343-345 3 p.

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor deposition

Tsai, W. C., Chang, C. Y., Jung, T. G., Chang, T. C., Lin, H-C. & Chen, L. P., 9月 1997, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 9 A, p. 5680-5687 8 p.

研究成果: Article › 同行評審

Resist-related damage on ultrathin gate oxide during plasma ashing

Chien, C-H., Chang, C. Y., Lin, H-C., Chang, T. F., Chiou, S. G., Chen, L. P. & Huang, T. Y., 1 2月 1997, 於: IEEE Electron Device Letters. 18, 2, p. 33-35 3 p.

研究成果: Article › 同行評審

22 引文斯高帕斯（Scopus）

The role of a resist during O₂ plasma ashing and its impact on the reliability evaluation of ultrathin gate oxides

Chien, C-H., Chang, C. Y., Lin, H-C., Chang, T. F., Hsien, S. K., Tseng, H. C., Chiou, S. G. & Huang, T. Y., 7月 1997, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 7 SUPPL. B, p. 4866-4873 8 p.

研究成果: Article › 同行評審

The role of resist for ultrathin gate oxide degradation during O₂ plasma ashing

Chien, C-H., Chang, C. Y., Lin, H-C., Chiou, S. G., Huang, T. Y., Chang, T. F. & Hsien, S. K., 1 5月 1997, 於: IEEE Electron Device Letters. 18, 5, p. 203-205 3 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

1996

Characterization of antenna effect by nondestructive gate current measurement

Lin, H-C., Chien, C-H. & Huang, T. Y., 15 8月 1996, 於: Japanese Journal of Applied Physics, Part 2: Letters. 35, 8 SUPPL. B

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Effect of Ge incorporation on the performance of p-channel polycrystalline Si_{l - x}Ge_x thin-film transistors

Lin, H-C., Lin, H. Y. & Chang, C. Y., 1 1月 1996, 於: Solid-State Electronics. 39, 5, p. 645-651 7 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Highly selective etching for polysilicon and etch-induced damage to gate oxide with halogen-bearing electron-cyclotron-resonance plasma

Chang, K-M., Yeh, T. H., Deng, I. C. & Lin, H-C., 1 9月 1996, 於: Journal of Applied Physics. 80, 5, p. 3048-3055 8 p.

研究成果: Article › 同行評審

26 引文斯高帕斯（Scopus）

1995

Characteristics of Boron Diffusion in Polysilicon/Silicon Systems with a Thin Si-B Layer as Diffusion Source

Chen, T. P., Lei, T. F., Lin, H-C. & Chang, C. Y., 1 1月 1995, 於: Journal of the Electrochemical Society. 142, 2, p. 532-537 6 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Characteristics of polycrystalline films grown by ultrahigh vacuum chemical vapor deposition system

Lin, H. Y., Lei, T. F., Lin, H-C., Chang, C. Y., Twu, R. C., Deng, R. C. & Lin, J., 1 1月 1995, 於: Solid State Electronics. 38, 12, p. 2029-2033 5 p.

研究成果: Article › 同行評審

Epitaxy of Si_1-xge_x by ultrahigh-vacuum chemical vapor deposition using Si₂H₆ and GeH₄

Chen, L. P., Chou, T. C., Tsai, W. C., Huang, G. W., Tseng, H. C., Lin, H-C. & Chang, C. Y., 7月 1995, 於: Japanese journal of applied physics. 34, 7, p. L869-L871

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

Low-Temperature Growth of Silicon-Boron Layer as Solid Diffusion Source for Polysilicon Contacted p+ -n Shallow Junction

Lei, T. F., Chen, T. P., Lin, H-C. & Chang, C. Y., 1 1月 1995, 於: IEEE Transactions on Electron Devices. 42, 12, p. 2104-2110 7 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

1994

Abruptness of Ge composition at the Si/SiGe interface grown by ultrahigh vacuum chemical vapor deposition

Tsai, W. C., Chang, C. Y., Jung, T. G., Liou, T. S., Huang, G. W., Chang, T. C., Chen, L. P. & Lin, H-C., 1 12月 1994, 於: Applied Physics Letters. 67, 1 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Characterization of the Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition

Jung, T. G., Chang, C. Y., Liu, C. S., Chang, T. C., Lin, H-C., Tsai, W. C., Huang, G. W. & Chen, L. P., 1 12月 1994, 於: Journal of Applied Physics. 76, 8, p. 4921-4923 3 p.

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

Deposition of in situ boron-doped polycrystalline silicon films at reduced pressures

Lin, H-C., Lin, H. Y., Chang, C. Y., Lei, T. F., Wang, P. J., Deng, R. C. & Lin, J., 1 12月 1994, 於: Applied Physics Letters. 64, 6, p. 763-765 3 p.

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

Effect of boron doping on the structural properties of polycrystalline silicon films grown at reduced pressures

Lin, H-C., Lin, H. Y., Chang, C. Y., Jung, T. G., Wang, P. J., Deng, R. C. & Lin, J., 1 12月 1994, 於: Journal of Applied Physics. 76, 3, p. 1572-1577 6 p.

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

Effects of SiH₄, GeH₄, and B₂H₆ on the Nucleation and Deposition of Polycrystalline Si_1-xGe_x Films

Lin, H-C., Chang, C. Y., Chen, W. H., Tsai, W. C., Chang, T. C., Jung, T. G. & Lin, H. Y., 1 1月 1994, 於: Journal of the Electrochemical Society. 141, 9, p. 2559-2563 5 p.

研究成果: Article › 同行評審

47 引文斯高帕斯（Scopus）

Fabrication of p-channel polycrystalline Si_1-xGe_x thin-film transistors by ultrahigh vacuum chemical vapor deposition

Lin, H-C., Jung, T. G., Lin, H. Y., Chang, C. Y. & Chen, L. P., 1 12月 1994, 於: Applied Physics Letters. 65, 13, p. 1700-1702 3 p.

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

Low-temperature epitaxial growth of silicon and silicon-germanium alloy by ultrahigh-vacuum chemical vapor deposition

Jung, T. G., Chang, C. Y., Chang, T. C., Lin, H-C., Wang, T., Tsai, W. C. & Huang, G. W., 1月 1994, 於: Japanese journal of applied physics. 33, 1R, p. 240 1 p.

研究成果: Article › 同行評審

22 引文斯高帕斯（Scopus）

Low temperature growth of silicon-boron layer by ultrahigh vacuum chemical vapor deposition

Chen, T. P., Lei, T. F., Lin, H-C., Chang, C. Y., Hsieh, W. Y. & Chen, L. J., 1 12月 1994, 於: Applied Physics Letters. 64, 14, p. 1853-1855 3 p.

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

1993

Anomalous doping behavior of in situ boron-doped polycrystalline silicon deposited by ultrahigh vacuum chemical vapor deposition

Lin, H-C., Lin, H. Y., Chang, C. Y., Lei, T. F., Wang, P. J., Deng, R. C., Lin, J. & Chao, C. Y., 1 12月 1993, 於: Applied Physics Letters. 63, 11, p. 1525-1527 3 p.

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

Deposition and device application of in situ boron-doped polycrystalline SiGe films grown at low temperatures

Lin, H-C., Jung, T. G., Lin, H. Y., Chang, C. Y., Lei, T. F., Wang, P. J., Deng, R. C., Lin, J. & Chao, C. Y., 1 12月 1993, 於: Journal of Applied Physics. 74, 9, p. 5395-5401 7 p.

研究成果: Article › 同行評審

25 引文斯高帕斯（Scopus）

Growth of undoped polycrystalline Si by an ultrahigh vacuum chemical vapor deposition system

Lin, H-C., Lin, H. Y., Chang, C. Y., Lei, T. F., Wang, P. J. & Chao, C. Y., 1 12月 1993, 於: Applied Physics Letters. 63, 10, p. 1351-1353 3 p.

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

林 鴻志

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林鴻志