林 鴻志

研究成果

每年研究成果 1993 2002 2006 2007 2009 2010 2011 2012 2014 2019 2022

• 196 Article
• 85 Conference contribution
• 13 Conference article
• 9 Paper
• 11 更多
  • 9 Patent
  • 1 Letter
  • 1 Review article

每年研究成果

每年研究成果

搜尋結果

• 2008

  A novel multiple-gate polycrystalline silicon nanowire transistor featuring an inverse - T gate

  Lin, H-C., Hsu, H. H., Su, C. J. & Huang, T. Y., 1 7月 2008, 於: IEEE Electron Device Letters. 29, 7, p. 718-720 3 p.

  研究成果: Article › 同行評審

  • Gates (transistor) 100%
  • Nanowires 87%
  • Polysilicon 81%
  • Polycrystalline Solid 62%
  • Nanowire 61%
  22 引文 斯高帕斯（Scopus）

• Fabrication and characterization of multiple-gated poly-Si nanowire thin-film transistors and impacts of multiple-gate structures on device fluctuations

  Hsu, H. H., Liu, T. W., Chan, L., Lin, C. D., Huang, T. Y. & Lin, H-C., 27 11月 2008, 於: IEEE Transactions on Electron Devices. 55, 11, p. 3063-3069 7 p.

  研究成果: Article › 同行評審

  • Thin film transistors 100%
  • Nanowires 97%
  • Polysilicon 90%
  • Nanowire 67%
  • Fabrication 57%
  35 引文 斯高帕斯（Scopus）

• Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layer

  Tsai, T. I., Lin, H-C., Lee, Y. J., Chen, K. S., Wang, J., Hsueh, F. K., Chao, T-S. & Huang, T. Y., 1 10月 2008, 於: Solid-State Electronics. 52, 10, p. 1518-1524 7 p.

  研究成果: Article › 同行評審

  • Hot Electron 100%
  • Buffer layers 99%
  • Hot electrons 69%
  • buffers 58%
  • Hydrogen 55%
  1 引文 斯高帕斯（Scopus）

• Impacts of SiN deposition parameters on n-channel metal-oxide-semiconductor field-effect-transistors

  Lu, C. S., Lin, H-C. & Huang, T. Y., 1 10月 2008, 於: Solid-State Electronics. 52, 10, p. 1584-1588 5 p.

  研究成果: Article › 同行評審

  • Hot carriers 100%
  • MOSFET devices 87%
  • metal oxide semiconductors 76%
  • Hydrogen 59%
  • field effect transistors 58%
  3 引文 斯高帕斯（Scopus）

• Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor

  Lin, C. H., Hsiao, C. Y., Hung, C. H., Lo, Y. R., Lee, C. C., Su, C. J., Lin, H-C., Ko, F-H., Huang, T. Y. & Yang, Y-S., 24 11月 2008, 於: Chemical Communications. 44, p. 5749-5751 3 p.

  研究成果: Article › 同行評審

  • Dopamine 100%
  • Nanowires 80%
  • Polysilicon 75%
  • Neurotransmitter 72%
  • Field effect transistors 69%
  74 引文 斯高帕斯（Scopus）
• 2007

  An innovative understanding of metal-insulator-metal (MIM)-capacitor degradation under constant-current stress

  Hung, C. C., Oates, A. S., Lin, H-C., Chang, Y. E. P., Wang, J. L., Cheng, H-C. & Yau, Y. W., 1 9月 2007, 於: IEEE Transactions on Device and Materials Reliability. 7, 3, p. 462-466 5 p.

  研究成果: Article › 同行評審

  • Degradation Rate 100%
  • Dielectric Material 90%
  • Capacitors 81%
  • Degradation 71%
  • Transmission Electron Microscopy 67%
  14 引文 斯高帕斯（Scopus）

• Dynamic NBTI characteristics of PMOSFETs with PE-SiN capping

  Lu, C. Y., Lin, H-C. & Lee, Y. J., 1 6月 2007, 於: Microelectronics Reliability. 47, 6, p. 924-929 6 p.

  研究成果: Article › 同行評審

  • Negative bias temperature instability 100%
  • Silicon nitride 84%
  • MOSFET devices 81%
  • metal oxide semiconductors 71%
  • Field Effect 69%
  7 引文 斯高帕斯（Scopus）

• Effective density-of-states distribution of polycrystalline silicon thin-film transistors under hot-carrier degradation

  Lee, M. H., Chang, K. H. & Lin, H-C., 20 9月 2007, 於: Journal of Applied Physics. 102, 5, 054508.

  研究成果: Article › 同行評審

  • transistors 100%
  • degradation 94%
  • silicon 67%
  • thin films 64%
  • electric potential 16%
  18 引文 斯高帕斯（Scopus）

• High-performance poly-Si nanowire NMOS transistors

  Lin, H-C. & Su, C. J., 1 3月 2007, 於: IEEE Transactions on Nanotechnology. 6, 2, p. 206-212 7 p.

  研究成果: Article › 同行評審

  • Nanowires 100%
  • Polysilicon 93%
  • Crystallization 87%
  • Rapid thermal annealing 82%
  • Transistors 68%
  34 引文 斯高帕斯（Scopus）

• Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n -channel metal-oxide-semiconductor field-effect transistors with SiN capping

  Lu, C. S., Lin, H-C., Huang, J. M. & Lee, Y. J., 30 3月 2007, 於: Applied Physics Letters. 90, 12, 122110.

  研究成果: Article › 同行評審

  • metal oxide semiconductors 100%
  • buffers 82%
  • field effect transistors 76%
  • silicon 52%
  • carrier mobility 50%
  7 引文 斯高帕斯（Scopus）

• Impacts of low-pressure chemical vapor deposition-SiN capping layer and lateral distribution of interface traps on hot-carrier stress of n-channel metal-oxide-semiconductor field-effect-transistors

  Lu, C. S., Lin, H-C., Huang, J. M., Lu, C. Y., Lee, Y. J. & Huang, T. Y., 24 4月 2007, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46, 4 B, p. 2027-2031 5 p.

  研究成果: Article › 同行評審

  • Low pressure chemical vapor deposition 100%
  • Hot carriers 82%
  • MOSFET devices 71%
  • metal oxide semiconductors 62%
  • low pressure 51%
  4 引文 斯高帕斯（Scopus）

• Impacts of SiN-capping layer on the device characteristics and hot-carrier degradation of nMOSFETs

  Lu, C. Y., Lin, H-C., Lee, Y. J., Shie, Y. L. & Chao, C. C., 1 3月 2007, 於: IEEE Transactions on Device and Materials Reliability. 7, 1, p. 175-180 6 p.

  研究成果: Article › 同行評審

  • Hot carriers 100%
  • Silicon nitride 90%
  • Nitride 72%
  • Hot electrons 66%
  • Hot Electron 64%
  4 引文 斯高帕斯（Scopus）

• Improvement of negative-Bias-temperature instability in SiN-capped p-channel metal-oxide-semiconductor field-effect transistors using ultrathin HfO₂ buffer layer

  Lu, C. S., Lin, H-C. & Lee, Y. J., 1 11月 2007, 於: Journal of the Electrochemical Society. 154, 12

  研究成果: Article › 同行評審

  • Negative bias temperature instability 100%
  • Buffer layers 99%
  • MOSFET devices 81%
  • metal oxide semiconductors 71%
  • Field Effect 69%

• Operations of poly-Si nanowire thin-film transistors with a multiple-gated configuration

  Su, C. J., Lin, H-C., Tsai, H. H., Hsu, H. H., Wang, T. M., Huang, T. Y. & Ni, W. X., 30 5月 2007, 於: Nanotechnology. 18, 21, 215205.

  研究成果: Article › 同行評審

  • Thin film transistors 100%
  • Nanowires 97%
  • Polysilicon 90%
  • Nanowire 67%
  • Threshold voltage 21%
  23 引文 斯高帕斯（Scopus）

• Spatially and temporally resolving the degradation of n-channel poly-Si thin-film transistors under hot-carrier stressing

  Lee, M. H., Chang, K. H. & Lin, H-C., 23 3月 2007, 於: Journal of Applied Physics. 101, 5, 054518.

  研究成果: Article › 同行評審

  • transistors 100%
  • degradation 94%
  • thin films 64%
  • damage 59%
  7 引文 斯高帕斯（Scopus）

• Water passivation effect on polycrystalline silicon nanowires

  Lin, H-C., Su, C. J., Hsiao, C. Y., Yang, Y-S. & Huang, T. Y., 23 11月 2007, 於: Applied Physics Letters. 91, 20, 202113.

  研究成果: Article › 同行評審

  • passivity 100%
  • nanowires 86%
  • water 61%
  • defects 59%
  • silicon 57%
  19 引文 斯高帕斯（Scopus）
• 2006

  A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects

  Chen, B. H., Wei, J. H., Lo, P. Y., Wang, H. H., Lai, M. J., Tsai, M. J., Chao, T-S., Lin, H-C. & Huang, T. Y., 1 7月 2006, 於: Solid-State Electronics. 50, 7-8, p. 1341-1348 8 p.

  研究成果: Article › 同行評審

  • Carbon nanotube field effect transistors 100%
  • Electrostatics 71%
  • Field Effect 66%
  • carbon nanotubes 57%
  • field effect transistors 52%
  13 引文 斯高帕斯（Scopus）

• Characterizing the channel backscattering behavior in nanoscale strained complementary metal oxide semiconductor field-effect transistors

  Lin, H. N., Chen, H. W., Ko, C. H., Ge, C. H., Lin, H-C., Huang, T. Y. & Lee, W. C., 15 11月 2006, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 11, p. 8611-8617 7 p.

  研究成果: Article › 同行評審

  • Backscattering 100%
  • MOSFET devices 85%
  • CMOS 65%
  • backscattering 65%
  • field effect transistors 57%
  4 引文 斯高帕斯（Scopus）

• Complementary carbon nanotube-gated carbon nanotube thin-film transistor

  Chen, B. H., Lin, H-C., Huang, T. Y., Wei, J. H., Wang, H. H., Tsai, M. J. & Chao, T-S., 27 2月 2006, 於: Applied Physics Letters. 88, 9, 093502.

  研究成果: Article › 同行評審

  • carbon nanotubes 100%
  • transistors 92%
  • field effect transistors 60%
  • thin films 59%
  • bundles 18%
  19 引文 斯高帕斯（Scopus）

• Correlating drain-current with strain-induced mobility in nanoscale strained CMOSFETs

  Lin, H. N., Chen, H. W., Ko, C. H., Ge, C. H., Lin, H-C., Huang, T. Y. & Lee, W. C., 1 8月 2006, 於: IEEE Electron Device Letters. 27, 8, p. 659-661 3 p.

  研究成果: Article › 同行評審

  • Drain Current 100%
  • Drain current 82%
  • Parasitic 79%
  • Compound Mobility 49%
  • Resistance 40%
  24 引文 斯高帕斯（Scopus）

• Device characteristics and aggravated negative bias temperature instability in p-channel metal-oxide-semiconductor field-effect transistors with uniaxial compressive strain

  Lu, C. Y., Lin, H-C., Chang, Y. F. & Huang, T. Y., 25 4月 2006, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 4 B, p. 3064-3069 6 p.

  研究成果: Article › 同行評審

  • Negative bias temperature instability 100%
  • Silicon nitride 84%
  • MOSFET devices 81%
  • metal oxide semiconductors 71%
  • field effect transistors 54%
  8 引文 斯高帕斯（Scopus）

• Fabrication and characterization of nanowire transistors with solid-phase crystallized poly-Si channels

  Lin, H-C., Lee, M. H., Su, C. J. & Shen, S. W., 1 12月 2006, 於: IEEE Transactions on Electron Devices. 53, 10, p. 2471-2477 7 p.

  研究成果: Article › 同行評審

  • Nanowires 100%
  • Polysilicon 93%
  • Implant 79%
  • Characterization (materials science) 70%
  • Nanowire 69%
  40 引文 斯高帕斯（Scopus）

• High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization

  Su, C. J., Lin, H-C. & Huang, T. Y., 1 7月 2006, 於: IEEE Electron Device Letters. 27, 7, p. 582-584 3 p.

  研究成果: Article › 同行評審

  • Nanowires 100%
  • Crystallization 87%
  • Nanowire 69%
  • Metals 51%
  • Thin film transistors 34%
  31 引文 斯高帕斯（Scopus）

• Impacts of uniaxial compressive strain on dynamic negative bias temperature instability of p-channel MOSFETs

  Lu, C. Y., Lin, H-C. & Huang, T. Y., 28 2月 2006, 於: Electrochemical and Solid-State Letters. 9, 4

  研究成果: Article › 同行評審

  • Negative bias temperature instability 100%
  • field effect transistors 54%
  • Strain 48%
  • Strain Energy 44%
  • Hydrogen 35%
  11 引文 斯高帕斯（Scopus）

• Novel method of converting metallic-type carbon nanotubes to semiconducting-type carbon nanotube field-effect transistors

  Chen, B. H., Wet, J. H., Lo, P. Y., Pei, Z. W., Chao, T-S., Lin, H-C. & Huang, T. Y., 25 4月 2006, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 4 B, p. 3680-3685 6 p.

  研究成果: Article › 同行評審

  • Carbon nanotube field effect transistors 100%
  • Single-walled carbon nanotubes (SWCN) 92%
  • Carbon nanotubes 70%
  • carbon nanotubes 57%
  • field effect transistors 52%
  14 引文 斯高帕斯（Scopus）

• Prospect of cobalt-mix-tetraethoxysilane method on localized lateral growth of carbon nanotubes for both p- and n-type field effect transistors

  Chen, B. H., Lin, H-C., Huang, T. Y., Wei, J. H., Hwang, C. L., Lo, P. Y., Tsai, M. J. & Chao, T-S., 9 10月 2006, 於: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24, 5, p. 2282-2290 9 p.

  研究成果: Article › 同行評審

  • Cobalt 100%
  • Field effect transistors 92%
  • Carbon nanotubes 91%
  • cobalt 80%
  • carbon nanotubes 74%

• Spatially resolving the hot carrier degradations of poly-Si thin-film transistors using a novel test structure

  Lin, H-C., Lee, M. H. & Chang, K. H., 1 7月 2006, 於: IEEE Electron Device Letters. 27, 7, p. 561-563 3 p.

  研究成果: Article › 同行評審

  • Hot carriers 100%
  • Thin film transistors 95%
  • Polysilicon 86%
  • Degradation 52%
  • Transistors 47%
  7 引文 斯高帕斯（Scopus）
• 2005

  A simple and low-/cost method to fabricate TFTs with poly-Si nanowire channel

  Lin, H-C., Lee, M. H., Su, C. J., Huang, T. Y., Lee, C. C. & Yang, Y-S., 1 9月 2005, 於: IEEE Electron Device Letters. 26, 9, p. 643-645 3 p.

  研究成果: Article › 同行評審

  • Nanowires 100%
  • Polysilicon 93%
  • Nanowire 69%
  • Costs 30%
  • Environment 15%
  65 引文 斯高帕斯（Scopus）

• Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs

  Lin, H. N., Chen, H. W., Ko, C. H., Ge, C. H., Lin, H-C., Huang, T. Y. & Lee, W. C., 1 9月 2005, 於: IEEE Electron Device Letters. 26, 9, p. 676-678 3 p.

  研究成果: Article › 同行評審

  • Backscattering 100%
  • Velocity 23%
  • Strain 19%
  • Tensile strain 17%
  • Ballistics 15%
  13 引文 斯高帕斯（Scopus）

• Determination of effective density-of-states using a novel Schottky barrier poly-Si thin-film transistor

  Lin, H-C., Lee, M. H., Yeh, K. L. & Huang, T. Y., 29 9月 2005, 於: Electrochemical and Solid-State Letters. 8, 9

  研究成果: Article › 同行評審

  • Schottky Barrier 100%
  • Leakage Current 95%
  • Thin film transistors 93%
  • Polysilicon 84%
  • Density of State 78%
  1 引文 斯高帕斯（Scopus）

• Localized lateral growth of single-walled carbon nanotubes for field-effect transistors by a cobalt-mix-TEOS method

  Chen, B. H., Lo, P. Y., Wei, J. H., Tsai, M. J., Hwang, C. L., Chao, T-S., Lin, H-C. & Huang, T. Y., 7 10月 2005, 於: Electrochemical and Solid-State Letters. 8, 10

  研究成果: Article › 同行評審

  • Single-walled carbon nanotubes (SWCN) 100%
  • Cobalt 84%
  • Field effect transistors 77%
  • Field Effect 72%
  • cobalt 67%
  5 引文 斯高帕斯（Scopus）
• 2004

  Effects of Process and Gate Doping Species on Negative-Bias-Temperature Instability of p-Channel MOSFETs

  Lee, D. Y., Huang, T. Y., Lin, H-C., Chiang, W. J., Huang, G. W. & Wang, T-H., 4 3月 2004, 於: Journal of the Electrochemical Society. 151, 2

  研究成果: Article › 同行評審

  • Negative bias temperature instability 100%
  • MOSFET devices 81%
  • Polysilicon 80%
  • Doping (additives) 77%
  • Field Effect 69%
  3 引文 斯高帕斯（Scopus）

• Hot carrier degradations of dynamic threshold silicon on insulator p-type metal-oxide-semiconductor field effect transistors

  Chao, T. S., Lee, Y. J., Huang, C. Y., Lin, H. C., Li, Y-M. & Huang, T. Y., 4月 2004, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 4 A, p. 1300-1304 5 p.

  研究成果: Article › 同行評審

  • Hot carriers 100%
  • p-type semiconductors 95%
  • MOSFET devices 87%
  • metal oxide semiconductors 76%
  • Silicon 58%
• 2003

  Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors

  Lin, H-C., Wang, M. F., Lu, C. Y. & Huang, T. Y., 1 2月 2003, 於: Solid-State Electronics. 47, 2, p. 247-251 5 p.

  研究成果: Article › 同行評審

  • Hot Electron 100%
  • Schottky Barrier 95%
  • Leakage Current 91%
  • Oxide semiconductors 82%
  • metal oxide semiconductors 71%
  16 引文 斯高帕斯（Scopus）

• Enhanced negative substrate bias degradation in nMOSFETs with ultrathin plasma nitrided oxide

  Perng, T. H., Chien, C-H., Chen, C. W., Lin, H-C., Chang, C. Y. & Huang, T. Y., 1 5月 2003, 於: IEEE Electron Device Letters. 24, 5, p. 333-335 3 p.

  研究成果: Article › 同行評審

  • Gate dielectrics 100%
  • Plasmas 80%
  • Hot electrons 78%
  • Oxides 75%
  • Substrates 62%
  4 引文 斯高帕斯（Scopus）

• Fabrication and characterization of Schottky barrier polysilicon thin-film transistors with excimer-laser crystallized channel

  Yeh, K. L., Lin, H-C., Tsai, R. W., Lee, M. H. & Huang, T. Y., 4月 2003, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 4 B, p. 2127-2131 5 p.

  研究成果: Article › 同行評審

  • Excimer lasers 100%
  • Thin film transistors 82%
  • Polysilicon 74%
  • Crystallization 70%
  • excimer lasers 64%

• H₂ and NH₃ plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions

  Yu, C. M., Lin, H-C., Huang, T. Y. & Lei, T. F., 1 12月 2003, 於: Journal of the Electrochemical Society. 150, 12

  研究成果: Article › 同行評審

  • Thin film transistors 100%
  • Passivation 94%
  • Polysilicon 90%
  • Chemical Passivation 79%
  • passivity 72%
  7 引文 斯高帕斯（Scopus）

• High-performance p-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions

  Lin, H-C., Wang, M. F., Hou, F. J., Lin, H. N., Lu, C. Y., Liu, J. T. & Huang, T. Y., 1 2月 2003, 於: IEEE Electron Device Letters. 24, 2, p. 102-104 3 p.

  研究成果: Article › 同行評審

  • Schottky Barrier 100%
  • FinFET 93%
  • Length 43%
  • Oxides 41%
  • Schottky barrier diodes 36%
  31 引文 斯高帕斯（Scopus）
• 2002

  Ambipolar Schottky-barrier TFTs

  Lin, H-C., Yeh, K. L., Huang, T. Y., Huang, R. G. & Sze, S. M., 1 2月 2002, 於: IEEE Transactions on Electron Devices. 49, 2, p. 264-270 7 p.

  研究成果: Article › 同行評審

  • Schottky Barrier 100%
  • Leakage Current 47%
  • Metals 46%
  • Thin film transistors 46%
  • Oxide semiconductors 43%
  27 引文 斯高帕斯（Scopus）

• Breakdown modes and their evolution in ultrathin gate oxide

  Lin, H-C., Lee, D. Y. & Huang, T. Y., 10月 2002, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41, 10, p. 5957-5963 7 p.

  研究成果: Article › 同行評審

  • Oxides 100%
  • breakdown 90%
  • oxides 72%
  • MOS devices 53%
  • Current voltage characteristics 51%
  8 引文 斯高帕斯（Scopus）

• Characteristics of polycrystalline silicon thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate

  Yu, M., Lin, H-C., Chen, G. H., Huang, T. Y. & Lei, T. F., 5月 2002, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41, 5 A, p. 2815-2820 6 p.

  研究成果: Article › 同行評審

  • Thin film transistors 100%
  • Polysilicon 90%
  • Leakage currents 84%
  • transistors 62%
  • leakage 48%

• Charge pumping profiling technique for the evaluation of plasma-charging-enhanced hot-carrier effect in short-n-channel metal-oxide-semiconductor field-effect transistors

  Chen, S. J., Chung, S. S. & Lin, H-C., 7月 2002, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41, 7 A, p. 4493-4499 7 p.

  研究成果: Article › 同行評審

  • Hot carriers 100%
  • MOSFET devices 87%
  • metal oxide semiconductors 76%
  • charging 69%
  • Plasmas 68%
  2 引文 斯高帕斯（Scopus）

• Enhanced negative-bias-temperature instability of p-channel metal-oxide-semiconductor transistors due to plasma charging damage

  Lee, D. Y., Lin, H-C., Wang, M. F., Tsai, M. Y., Huang, T. Y. & Wang, T-H., 1 4月 2002, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41, 4 B, p. 2419-2422 4 p.

  研究成果: Article › 同行評審

  • Negative bias temperature instability 100%
  • Oxide semiconductors 82%
  • metal oxide semiconductors 71%
  • charging 64%
  • Plasmas 64%
  19 引文 斯高帕斯（Scopus）

• Impact of thermal stability on the characteristics of complementary metal oxide semiconductor transistors with TiN metal gate

  Wang, M. F., Huang, T. Y., Kao, Y. C., Lin, H-C. & Chang, C. Y., 2月 2002, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41, 2 A, p. 546-551 6 p.

  研究成果: Article › 同行評審

  • Oxide semiconductors 100%
  • Rapid thermal annealing 97%
  • Thermodynamic stability 87%
  • CMOS 75%
  • thermal stability 73%
  7 引文 斯高帕斯（Scopus）

• Reduction of off-state leakage current in Schottky barrier thin-film transistors (SBTFT) by a field-induced drain

  Yeh, K. L., Lin, H-C., Huang, R. G., Tsai, R. W. & Huang, T. Y., 4月 2002, 於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41, 4 B, p. 2625-2629 5 p.

  研究成果: Article › 同行評審

  • Thin film transistors 100%
  • Leakage currents 84%
  • leakage 64%
  • transistors 62%
  • thin films 40%
  3 引文 斯高帕斯（Scopus）

• Response surface methodology applied to silicon trench etching in Cl₂/HBr/O₂ using transformer coupled plasma technique

  Hung, C. C., Lin, H-C. & Shih, H. C., 1 6月 2002, 於: Solid-State Electronics. 46, 6, p. 791-795 5 p.

  研究成果: Article › 同行評審

  • Plasma sources 100%
  • Surface analysis 79%
  • Etching 66%
  • transformers 65%
  • Plasmas 56%
  13 引文 斯高帕斯（Scopus）

• Self-aligned fabrication of thin-film transistors with field-induced drain

  Yu, C. M., Lin, H-C., Lin, C. Y., Yeh, K. L., Huang, T. Y. & Lei, T. F., 1 8月 2002, 於: Solid-State Electronics. 46, 8, p. 1091-1095 5 p.

  研究成果: Article › 同行評審

  • Leakage Current 100%
  • Thin film transistors 97%
  • Electric Field 68%
  • transistors 60%
  • Fabrication 56%
  1 引文 斯高帕斯（Scopus）

• Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma technique

  Hung, C. C., Shih, H. C., Lin, H-C., Huang, T. Y., Wang, M. F. & Shih, H. C., 1 1月 2002, 於: Microelectronic Engineering. 63, 4, p. 405-416 12 p.

  研究成果: Article › 同行評審

  • Polysilicon 100%
  • Doping (additives) 96%
  • Etching 93%
  • transformers 91%
  • Plasmas 79%
  6 引文 斯高帕斯（Scopus）

• Thermal-flow techniques for sub-35 nm contact-hole fabrication in electron-beam lithography

  Chen, H. L., Chen, C. H., Ko, F-H., Chu, T. C., Pan, C. T. & Lin, H-C., 1 11月 2002, 於: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20, 6, p. 2973-2978 6 p.

  研究成果: Article › 同行評審

  • Electron beam lithography 100%
  • lithography 53%
  • Fabrication 47%
  • electron beams 46%
  • fabrication 39%
  4 引文 斯高帕斯（Scopus）
• 2001

  Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a Cl₂ helicon-wave plasma

  Chiu, H. K., Lin, T. L., Hu, Y., Leou, K. C., Lin, H-C., Tsai, M. S. & Huang, T. Y., 1 3月 2001, 於: Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films. 19, 2, p. 455-459 5 p.

  研究成果: Article › 同行評審

  • Helicons 100%
  • Plasma waves 99%
  • Titanium nitride 76%
  • Silicon Dioxide 65%
  • titanium nitrides 64%
  19 引文 斯高帕斯（Scopus）