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查看斯高帕斯 (Scopus) 概要
林 鴻志
教授
電子研究所
h-index
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h5-index
2732
引文
24
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
381
引文
11
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
116
引文
6
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1993 …
2024
每年研究成果
概覽
指紋
網路
計畫
(55)
研究成果
(323)
類似的個人檔案
(8)
指紋
查看啟用 Horng-Chih Lin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Thin-film Transistors
52%
Poly-Si Nanowire
38%
Polysilicon
35%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
35%
Poly-Si
29%
Nanowire Channel
26%
P-channel
23%
MOSFET
20%
Channel Length
20%
On-state Current
19%
Double Gate
19%
Silicon Nanowires (SiNWs)
19%
Gate-all-around
19%
Amorphous InGaZnO (a-IGZO)
18%
Transistor
18%
Film Profile Engineering
18%
Ultra-thin Gate Oxide
18%
N-channel
18%
Oxides
17%
Schottky Barrier
16%
Subthreshold Swing
16%
High Performance
16%
Ultrathin
16%
Silicon Nitride
16%
Junction-less
15%
Charge Plasma
14%
Germanium Quantum Dots
14%
Silica
13%
NMOSFET
13%
High Vacuum Chemical Vapor Deposition
12%
Device Performance
12%
Off-state Leakage Current
12%
Current Ratio
12%
SiGe
12%
Self-aligned
12%
Nitrided Oxide
11%
Charging Damage
11%
Silicon Nanowire Transistor
11%
Field-induced
11%
Threshold Voltage
11%
Negative Bias Temperature Instability
10%
Si1-xGex
10%
NWFET
10%
Film Profile
9%
Electrical Characteristics
9%
Plasma-induced Damage
9%
Inverter
9%
Gate Oxide
9%
Annealing
9%
ZnO Thin Film Transistor
8%
Material Science
Thin-Film Transistor
85%
Nanowire
67%
Oxide Compound
57%
Silicon
51%
Transistor
47%
Film
35%
Metal-Oxide-Semiconductor Field-Effect Transistor
28%
Field Effect Transistor
24%
Schottky Barrier
16%
Quantum Dot
15%
Silicon Nitride
15%
Germanium
13%
Density
13%
Hot Carrier
12%
Nitride Compound
10%
Metal Oxide
10%
Boron
10%
Dielectric Material
10%
ZnO
9%
Chemical Vapor Deposition
9%
Oxidation Reaction
9%
Negative-Bias Temperature Instability
9%
Lithography
8%
Oxide Semiconductor
8%
Surface (Surface Science)
8%
Electrical Property
8%
Annealing
8%
Capacitor
7%
Heterojunction
7%
Capacitance
6%
Nanosphere
6%
Complementary Metal-Oxide-Semiconductor Device
6%
Carbon Nanotube
5%
Zinc Oxide
5%
Doping (Additives)
5%
Silicide
5%
Phase Composition
5%
Engineering
Polysilicon
100%
Thin-Film Transistor
75%
Nanowire
39%
Metal-Oxide-Semiconductor Field-Effect Transistor
33%
Si Nanowires
32%
Gate Oxide
28%
Channel Length
21%
Schottky Barrier
17%
Field-Effect Transistor
16%
Engineering
16%
Current Ratio
15%
Silicon Dioxide
12%
Chemical Vapor Deposition
12%
Vapor Deposition
12%
Quantum Dot
11%
Antenna
10%
Device Performance
10%
Negative-Bias Temperature Instability
10%
Inverter
10%
Low-Temperature
9%
Side Wall
9%
Nanoscale
9%
Current Drive
9%
Nitride
8%
Oxide Thickness
8%
Induced Damage
7%
Capping Layer
7%
Passivation
6%
Metal Oxide Semiconductor
6%
Current Drain
6%
Test Structure
6%
Metal Gate
6%
Compressive Strain
6%
Polycrystalline
5%
Experimental Result
5%
Complementary Metal-Oxide-Semiconductor
5%
Drain Region
5%
Gate Bias
5%
Field Effect Transistor
5%
Photoresist
5%
