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查看斯高帕斯 (Scopus) 概要
林 鴻志
教授
電子研究所
h-index
h10-index
h5-index
2787
引文
24
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
330
引文
10
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
97
引文
6
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1993 …
2025
每年研究成果
概覽
指紋
網路
計畫
(55)
研究成果
(331)
類似的個人檔案
(9)
指紋
查看啟用 Horng-Chih Lin 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Thin-film Transistors
52%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
37%
Poly-Si Nanowire
36%
Polysilicon
36%
Poly-Si
28%
Nanowire Channel
25%
P-channel
23%
MOSFET
20%
Double Gate
19%
Channel Length
19%
On-state Current
19%
N-channel
19%
Amorphous InGaZnO (a-IGZO)
18%
Silicon Nanowires (SiNWs)
18%
Gate-all-around
18%
Film Profile Engineering
18%
Subthreshold Swing
17%
Transistor
17%
Ultra-thin Gate Oxide
17%
Silicon Nitride
17%
Germanium Quantum Dots
16%
Oxides
16%
Schottky Barrier
16%
High Performance
15%
Ultrathin
15%
Junction-less
14%
Charge Plasma
14%
Silica
12%
NMOSFET
12%
Self-aligned
12%
Off-state Leakage Current
12%
Device Performance
12%
High Vacuum Chemical Vapor Deposition
11%
Current Ratio
11%
SiGe
11%
Threshold Voltage
11%
Nitrided Oxide
11%
Charging Damage
11%
Silicon Nanowire Transistor
11%
Field-induced
10%
Negative Bias Temperature Instability
10%
Gate Oxide
10%
Si1-xGex
9%
Germanium
9%
NWFET
9%
Film Profile
9%
Electrical Characteristics
9%
Plasma-induced Damage
9%
Inverter
9%
Annealing
8%
Material Science
Thin-Film Transistor
87%
Nanowire
64%
Oxide Compound
56%
Silicon
51%
Transistor
46%
Film
36%
Metal-Oxide-Semiconductor Field-Effect Transistor
27%
Field Effect Transistor
23%
Quantum Dot
20%
Germanium
17%
Silicon Nitride
16%
Schottky Barrier
15%
Density
13%
Hot Carrier
11%
Nitride Compound
10%
Boron
10%
Metal Oxide
10%
Dielectric Material
9%
ZnO
9%
Chemical Vapor Deposition
8%
Oxidation Reaction
8%
Negative-Bias Temperature Instability
8%
Lithography
8%
Oxide Semiconductor
8%
Surface (Surface Science)
8%
Annealing
8%
Electrical Property
8%
Capacitor
7%
Heterojunction
7%
Capacitance
6%
Nanosphere
6%
Zinc Oxide
6%
Complementary Metal-Oxide-Semiconductor Device
6%
Thin Films
5%
Doping (Additives)
5%
Carbon Nanotube
5%
Phase Composition
5%
Gallium
5%
Indium
5%
Engineering
Polysilicon
100%
Thin-Film Transistor
77%
Nanowire
38%
Metal-Oxide-Semiconductor Field-Effect Transistor
33%
Si Nanowires
30%
Gate Oxide
27%
Channel Length
20%
Engineering
16%
Schottky Barrier
16%
Field-Effect Transistor
15%
Current Ratio
15%
Quantum Dot
15%
Silicon Dioxide
12%
Chemical Vapor Deposition
12%
Vapor Deposition
12%
Device Performance
10%
Antenna
10%
Low-Temperature
10%
Inverter
9%
Negative-Bias Temperature Instability
9%
Side Wall
9%
Nanoscale
8%
Current Drive
8%
Nitride
7%
Oxide Thickness
7%
Induced Damage
7%
Passivation
7%
Current Drain
6%
Capping Layer
6%
Metal Oxide Semiconductor
6%
Test Structure
5%
Metal Gate
5%
Photoresist
5%
Compressive Strain
5%
Polycrystalline
5%
Experimental Result
5%
Complementary Metal-Oxide-Semiconductor
5%
Drain Region
5%
Gate Bias
5%
