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查看斯高帕斯 (Scopus) 概要
渡邊 浩志
教授
電機工程學系
https://orcid.org/0000-0002-6742-1913
h-index
h10-index
h5-index
715
引文
13
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
85
引文
6
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
49
引文
4
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1992 …
2023
每年研究成果
概覽
指紋
網路
計畫
(9)
研究成果
(48)
獎項
(7)
類似的個人檔案
(6)
指紋
查看啟用 Hiroshi Watanabe 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Device Simulation
100%
Direct Tunneling
79%
Poly-Si
75%
Floating Gate
75%
Biomolecules
66%
Antiferromagnetic
58%
Monte Carlo Simulation
55%
Local Trap
51%
Silica
50%
Ladder Model
50%
Non-volatile Memory
50%
Gate Leakage Current
50%
Grain Boundary
50%
Leakage Current
48%
Random Telegraph Noise
45%
Blockchain
45%
Trap-assisted Tunneling
45%
Dielectric
44%
Transient Devices
41%
Data Retention
38%
Capacitance-voltage
38%
Internet of Things
38%
Oxides
37%
Impurities
37%
Scale Effect
36%
Single Electron
34%
Carrier Transport Mechanism
33%
CMOSFETs
33%
Interfacial Transition Layer
33%
Ultra-thin SOI
33%
Tight-binding
33%
Si-SiO2
33%
Nanowire Arrays
33%
Array Biosensor
33%
Metal-insulator-metal
33%
Gate Voltage
32%
Threshold Voltage
31%
Incomplete Ionization
30%
Memory Cell
28%
Electrolyte
28%
SiC Cluster
27%
Limit of Detection
27%
Electron Devices
26%
Dielectric Constant
26%
Band Broadening
25%
Intra-chain
25%
Haldane
25%
Nanowires
23%
MOSFET
23%
Reliability Issues
22%
Engineering
Dielectrics
99%
Tunnel Construction
86%
Floating Gate
80%
Biomolecule
66%
Polysilicon
63%
Gate Voltage
61%
Transients
61%
Direct Tunneling
50%
Numerical Study
50%
Nonvolatile Memory
50%
Metal-Oxide-Semiconductor Field-Effect Transistor
50%
Biosensor
50%
Nanowire
50%
Silicon Dioxide
50%
Tunnel
50%
Band Gap
47%
Data Retention
38%
Silicon on Insulator
33%
Transport Mechanism
33%
Nanometre
33%
Single Electron
33%
Heisenberg Box
33%
Gate Oxide
33%
Binding Method
33%
Carrier Mobility
33%
Oxide Thickness
27%
Coulomb Blockade
22%
Correlation Length
22%
Boundary Condition
22%
Electron Devices
21%
Gate Stack
20%
Length Scale
16%
Open Boundary
16%
Simple Model
16%
Polycrystalline Metal
16%
Energy State
16%
Graphene
16%
Nitride
16%
Heterostructures
16%
Dopants
16%
Molecular Field
16%
Programmable Read-Only Memory
16%
Interlayer Interaction
16%
Fluid Dynamics
16%
Cell Operation
16%
Flash Memory
16%
Metal-Insulator-Metal
16%
Depletion Layer
16%
Molybdenum Disulfide
16%
Internet-Of-Things
16%
