許 恒通

研究成果

每年研究成果 2000 2008 2009 2010 2012 2022 2023

• 102 Article
• 67 Conference contribution
• 6 Patent
• 2 Paper
• 5 更多
  • 2 Editorial
  • 1 Conference article
  • 1 Letter
  • 1 Review article

每年研究成果

每年研究成果

搜尋結果

• 2017

  Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications

  Lin, Y. K., Noda, S., Lo, H. C., Liu, S. C., Wu, C. H., Wong, Y. Y., Luc, Q. H., Chang, P. C., Hsu, H-T., Samukawa, S. & Chang, E. Y., 1 1月 2017, 於: IEEE Electron Device Letters. 38, 1, 1 p., 7802679.

  研究成果: Letter › 同行評審