每年研究成果
每年研究成果
- 1結果
搜尋結果
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2017
Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications
Lin, Y. K., Noda, S., Lo, H. C., Liu, S. C., Wu, C. H., Wong, Y. Y., Luc, Q. H., Chang, P. C., Hsu, H.-T., Samukawa, S. & Chang, E. Y., 1月 2017, 於: Ieee Electron Device Letters. 38, 1, p. 149 1 p., 7802679.研究成果: Letter › 同行評審