許 恒通

研究成果

每年研究成果 2000 2008 2009 2010 2012 2022 2023 2023

• 111 Article
• 68 Conference contribution
• 6 Patent
• 2 Paper
• 5 更多
  • 2 Editorial
  • 1 Conference article
  • 1 Letter
  • 1 Review article

每年研究成果

每年研究成果

搜尋結果

• 2014

  A x 2 dual-band antenna array for Radio-Frequency Identification (RFID) handheld reader applications

  Hsu, H-T. & Huang, T. J., 1 10月 2014, 於: IEEE Transactions on Antennas and Propagation. 62, 10, p. 5260-5267 8 p., 2340897.

  研究成果: Article › 同行評審

  • antenna arrays 100%
  • readers 92%
  • Radiators 89%
  • Antenna arrays 77%
  • Radio frequency identification (RFID) 76%
  23 引文 斯高帕斯（Scopus）

• Frequency Response of a Ferroelectric Material in Double-Negative Region

  Wu, M. R., Hsu, H-T., Wu, C. J. & Chang, S. J., 1 10月 2014, 於: IEEE Photonics Journal. 6, 5, 2201711.

  研究成果: Article › 同行評審

  開啟存取

  • Lithium tantalate 100%
  • Ferroelectric materials 78%
  • ferroelectric materials 70%
  • Permittivity 59%
  • frequency response 57%

• Investigation of the flip-chip package with BCB underfill for W-band applications

  Wang, C. T., Hsu, L. H., Wu, W. C., Hsu, H-T., Chang, E. Y., Hu, Y. C., Lee, C. T. & Tsai, S. P., 1 1月 2014, 於: IEEE Microwave and Wireless Components Letters. 24, 1, p. 11-13 3 p., 6665105.

  研究成果: Article › 同行評審

  • Dielectric losses 100%
  • chips 62%
  • Insertion losses 41%
  • Strength of materials 40%
  • Thermal expansion 39%
  5 引文 斯高帕斯（Scopus）

• Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application

  Chiang, C. Y., Hsu, H-T. & Chang, E. Y., 1 11月 2014, 於: Japanese journal of applied physics. 53, 11, 110311.

  研究成果: Article › 同行評審

  • linear amplifiers 100%
  • power amplifiers 78%
  • High electron mobility transistors 77%
  • Long Term Evolution (LTE) 76%
  • high electron mobility transistors 69%
  6 引文 斯高帕斯（Scopus）

• Performance enhancement of flip-chip packaged AlGaN/GaN HEMTs using active-region bumps-induced piezoelectric effect

  Tsai, S. P., Hsu, H-T., Chiang, C. Y., Tu, Y. Y., Chang, C. H., Hsieh, T. E., Wang, H. C., Liu, S. C. & Chang, E. Y., 1 1月 2014, 於: IEEE Electron Device Letters. 35, 7, p. 735-737 3 p., 6823098.

  研究成果: Article › 同行評審

  • Piezoelectricity 100%
  • High electron mobility transistors 82%
  • Thermal Expansion 75%
  • Packaging 64%
  • Compound Mobility 54%
  5 引文 斯高帕斯（Scopus）
• 2013

  A koch-shaped log-periodic dipole array (LPDA) antenna for universal ultra-high-frequency (UHF) radio frequency identification (RFID) handheld reader

  Hsu, H-T. & Huang, T. J., 1 1月 2013, 於: IEEE Transactions on Antennas and Propagation. 61, 9, p. 4852-4856 5 p., 6517871.

  研究成果: Article › 同行評審

  • antenna arrays 100%
  • ultrahigh frequencies 93%
  • readers 92%
  • Antenna arrays 77%
  • Radio frequency identification (RFID) 76%
  58 引文 斯高帕斯（Scopus）

• Antenna miniaturisation and broadband design via a decomposition of structure into conjugated elemental antennas for natural impedance matching

  Chou, H. T., Chao, T. C., Hsu, H-T., Kuo, L. R. & Kuo, F. Y., 17 12月 2013, 於: IET Microwaves, Antennas and Propagation. 7, 15, p. 1238-1246 9 p.

  研究成果: Article › 同行評審

  • Decomposition 100%
  • Antennas 89%
  • Radiators 37%
  • Capacitors 27%
  • Acoustic impedance 25%
  1 引文 斯高帕斯（Scopus）

• Assessment of thermal impact on performance of metamorphic high-electron-mobility transistors on polymer substrates using flip-chip-on-board technology

  Wang, C. T., Hsu, H-T., Chiang, C. Y., Chang, E. Y. & Lim, W. C., 1 12月 2013, 於: Applied Physics Express. 6, 12, 126701.

  研究成果: Article › 同行評審

  • High electron mobility transistors 100%
  • high electron mobility transistors 89%
  • chips 68%
  • Polymers 63%
  • Substrates 61%
  1 引文 斯高帕斯（Scopus）

• InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications

  Chang, E. Y., Kuo, C. I., Hsu, H-T., Chiang, C. Y. & Miyamoto, Y., 1 3月 2013, 於: Applied Physics Express. 6, 3, 034001.

  研究成果: Article › 同行評審

  • Submillimeter waves 100%
  • submillimeter waves 85%
  • Transconductance 80%
  • High electron mobility transistors 77%
  • Cutoff frequency 77%
  109 引文 斯高帕斯（Scopus）

• Performance evaluation of InGaSb/AlSb P-channel high-hole-mobility transistor faricated using BCl₃ dry etching

  Yu, C. H., Hsu, H-T., Chiang, C. Y., Kuo, C. I., Miyamoto, Y. & Chang, E. Y., 1 2月 2013, 於: Japanese journal of applied physics. 52, 2, 020203.

  研究成果: Article › 同行評審

  • Hole mobility 100%
  • Dry etching 88%
  • hole mobility 68%
  • Transistors 51%
  • transistors 48%
  2 引文 斯高帕斯（Scopus）
• 2012

  Bias-dependent radio frequency performance for 40nm inas high-electron-mobility transistor with a cutoff frequency higher than 600GHz

  Fatah, F., Kuo, C. I., Hsu, H-T., Chiang, C. Y., Hsu, C. Y., Miyamoto, Y. & Chang, E. Y., 1 11月 2012, 於: Japanese Journal of Applied Physics. 51, 11, 110203.

  研究成果: Article › 同行評審

  • High electron mobility transistors 100%
  • Cutoff frequency 99%
  • high electron mobility transistors 89%
  • radio frequencies 74%
  • Impact ionization 44%
  5 引文 斯高帕斯（Scopus）

• Effect of gate length on device performances of AlSb/InAs high electron mobility transistors fabricated using BCl ₃ dry etching

  Kuo, C. I., Hsu, H-T., Hsu, C. Y., Yu, C. H., Ho, H. C., Chang, E. Y. & Chyi, J. I., 1 6月 2012, 於: Japanese Journal of Applied Physics. 51, 6 PART 1, 060202.

  研究成果: Article › 同行評審

  • Dry etching 100%
  • High electron mobility transistors 79%
  • high electron mobility transistors 70%
  • etching 51%
  • Inductively coupled plasma 51%
  1 引文 斯高帕斯（Scopus）

• Generic dipole-based antenna-featuring dual-band and wideband modes of operation

  Hsu, H-T. & Huang, T. J., 1 12月 2012, 於: IET Microwaves, Antennas and Propagation. 6, 15, p. 1623-1628 6 p.

  研究成果: Article › 同行評審

  • Antennas 100%
  • Wavelength 68%
  11 引文 斯高帕斯（Scopus）
• 2011

  A flip-chip packaged 80-nm In _0.7 Ga _0.3 As MHEMT for millimeter-wave low-noise applications

  Wang, C. T., Kuo, C. I., Hsu, H-T., Chang, E. Y., Hsu, L. H., Lim, W. C., Chiang, C. Y., Tsai, S. P. & Huang, G. W., 1 2月 2011, 於: Microelectronic Engineering. 88, 2, p. 183-186 4 p.

  研究成果: Article › 同行評審

  • Packaging Material 100%
  • millimeter waves 80%
  • Millimeter waves 80%
  • low noise 78%
  • chips 64%
  3 引文 斯高帕斯（Scopus）

• A multichanneled filter in a photonic crystal containing coupled defects

  Hsu, H-T., Lee, M. H., Yang, T. J., Wang, Y. C. & Wu, C. J., 1 1月 2011, 於: Progress in Electromagnetics Research. 117, p. 379-392 14 p.

  研究成果: Article › 同行評審

  • Photonic crystals 100%
  • filters 45%
  • photonics 44%
  • Defects 43%
  • defects 35%
  19 引文 斯高帕斯（Scopus）

• Flip-chip packaging of low-noise metamorphic high electron mobility transistors on low-cost organic substrate

  Wang, C. T., Kuo, C. I., Hsu, H-T., Chang, E. Y., Hsu, L. H., Lim, W. C. & Miyamoto, Y., 1 9月 2011, 於: Japanese Journal of Applied Physics. 50, 9 PART 1, 096503.

  研究成果: Article › 同行評審

  • High electron mobility transistors 100%
  • packaging 90%
  • high electron mobility transistors 89%
  • low noise 83%
  • Packaging 77%
  3 引文 斯高帕斯（Scopus）

• Investigation of photonic band gap in a circular photonic crystal

  Chang, T. W., Hsu, H-T. & Wu, C. J., 21 11月 2011, 於: Journal of Electromagnetic Waves and Applications. 25, 16, p. 2222-2235 14 p.

  研究成果: Article › 同行評審

  • Photonic band gap 100%
  • Photonic crystals 91%
  • Photonic Crystal 74%
  • Band Gap 44%
  • photonics 40%
  19 引文 斯高帕斯（Scopus）

• Tunable photonic band gap in a doped semiconductor photonic crystal in near infrared region

  Wu, C. J., Hsieh, Y. C. & Hsu, H-T., 1 1月 2011, 於: Progress in Electromagnetics Research. 114, p. 271-283 13 p.

  研究成果: Article › 同行評審

  開啟存取

  • Photonic band gap 100%
  • Photonic crystals 91%
  • Semiconductor materials 52%
  • Infrared radiation 50%
  • Silicon 46%
  20 引文 斯高帕斯（Scopus）

• V-band flip-chip assembled gain block using In0:6Ga0:4As metamorphic high-electron-mobility transistor technology

  Chiang, C. Y., Hsu, H-T., Wang, C. T., Kuo, C. I., Hsu, H. S. & Chang, E. Y., 1 10月 2011, 於: Applied Physics Express. 4, 10, 104105.

  研究成果: Article › 同行評審

  • High electron mobility transistors 100%
  • extremely high frequencies 96%
  • high electron mobility transistors 89%
  • chips 68%
  • Electric power utilization 63%
  1 引文 斯高帕斯（Scopus）
• 2010

  30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs

  Chang, C. T., Hsu, H-T., Chang, E. Y., Kuo, C. I., Huang, J. C., Lu, C. Y. & Miyamoto, Y., 1 2月 2010, 於: IEEE Electron Device Letters. 31, 2, p. 105-107 3 p., 5357371.

  研究成果: Article › 同行評審

  • High electron mobility transistors 100%
  • Compound Mobility 66%
  • Leakage Current 56%
  • Ohmic contacts 43%
  • Gates (transistor) 40%
  20 引文 斯高帕斯（Scopus）

• An Al₂O₃ AlGaAs/InGaAs metal-oxide-semiconductor phemt spdt switch with low control currents for wireless communication applications

  Wu, Y. C., Lin, Y. C., Chang, E. Y., Lee, C. T., Kei, C. C., Chang, C. T. & Hsu, H-T., 27 4月 2010, 於: Electrochemical and Solid-State Letters. 13, 6

  研究成果: Article › 同行評審

  • wireless communication 100%
  • Electron Mobility 96%
  • Oxide semiconductors 96%
  • High electron mobility transistors 93%
  • Electric current control 84%

• Analysis of wave properties in photonic crystal narrowband filters with left-handed defect

  Hsu, H-T., Chang, T. W., Yang, T. J., Chu, B. H. & Wu, C. J., 1 12月 2010, 於: Journal of Electromagnetic Waves and Applications. 24, 16, p. 2285-2298 14 p.

  研究成果: Article › 同行評審

  • Crystal filters 100%
  • Photonic crystals 92%
  • Photonic Crystal 75%
  • Refractive Index 56%
  • Wave 55%
  18 引文 斯高帕斯（Scopus）

• A novel dipole antenna design with an over 100% operational bandwidth

  Kuo, F. Y., Chou, H. T., Hsu, H-T., Chou, H. H. & Nepa, P., 1 8月 2010, 於: IEEE Transactions on Antennas and Propagation. 58, 8, p. 2737-2741 5 p., 5466044.

  研究成果: Article › 同行評審

  • antenna design 100%
  • dipole antennas 90%
  • Dipole antennas 80%
  • Radiation 53%
  • dipoles 49%
  20 引文 斯高帕斯（Scopus）

• Application of Quasi log-periodic antenna for UHF passive RFID tag design featuring constant power transmission coefficient over broadband operation

  Hsu, H-T., Kuo, F. Y. & Chang, C. H., 1 3月 2010, 於: Journal of Electromagnetic Waves and Applications. 24, 5-6, p. 575-586 12 p.

  研究成果: Article › 同行評審

  • log periodic antennas 100%
  • Radiator 97%
  • Log periodic antennas 93%
  • power transmission 75%
  • Power transmission 57%
  11 引文 斯高帕斯（Scopus）

• DC and RF performance improvement of 70nm quantum well field effect transistor by narrowing source - drain spacing technology

  Kuo, C. I., Hsu, H-T., Chang, E. Y., Miyamoto, Y., Wu, C. Y., Chen, Y. L. & Hsiao, Y. L., 19 4月 2010, 於: Japanese Journal of Applied Physics. 49, 1 Part 1, 010212.

  研究成果: Article › 同行評審

  • Semiconductor quantum wells 100%
  • Field effect transistors 68%
  • field effect transistors 50%
  • direct current 50%
  • quantum wells 49%
  1 引文 斯高帕斯（Scopus）

• Design of WiFi/WiMAX Dual-band E-shaped patch antennas through cavity model approach

  Hsu, H-T., Kuo, F. Y. & Lu, P. H., 1 2月 2010, 於: Microwave and Optical Technology Letters. 52, 2, p. 471-474 4 p.

  研究成果: Article › 同行評審

  • patch antennas 100%
  • Conductor 69%
  • Microstrip antennas 66%
  • Resonance 55%
  • cavities 42%
  17 引文 斯高帕斯（Scopus）

• Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology

  Kuo, C. I., Hsu, H-T., Wu, C. Y., Chang, E. Y., Chen, Y. L. & Lim, W. C., 1 1月 2010, 於: Microelectronic Engineering. 87, 12, p. 2625-2628 4 p.

  研究成果: Article › 同行評審

  • Current Gain 100%
  • Transconductance 86%
  • sinking 79%
  • recesses 75%
  • High electron mobility transistors 65%
  6 引文 斯高帕斯（Scopus）

• Improvement on the noise performance of InAs-based HEMTs with gate sinking technology

  Hsu, H-T., Kuo, C. I., Chang, E. Y. & Kuo, F. Y., 1 11月 2010, 於: Microelectronic Engineering. 87, 11, p. 2253-2257 5 p.

  研究成果: Article › 同行評審

  • Current Gain 100%
  • Transconductance 86%
  • sinking 79%
  • Fluorescence Maxima 74%
  • Parasitic 69%
  3 引文 斯高帕斯（Scopus）

• Investigation of photonic band gap in a one-dimensional lossy DNG/DPS photonic crystal

  Hsu, H-T., Ting, K. C., Yang, T. J. & Wu, C. J., 1 4月 2010, 於: Solid State Communications. 150, 13-14, p. 644-647 4 p.

  研究成果: Article › 同行評審

  • Photonic band gap 100%
  • Photonic crystals 91%
  • Photonic Crystal 74%
  • Magnetic Loss 58%
  • Magnetic leakage 57%
  16 引文 斯高帕斯（Scopus）

• Linearity characteristics of field-plated AlGaN/GaN high electron mobility transistors for microwave applications

  Huang, J. C., Hsu, H-T., Chang, E. Y., Lu, C. Y., Chang, C. T., Kuo, F. Y., Chen, Y. C. & Hsu, T. H., 19 4月 2010, 於: Japanese journal of applied physics. 49, 1 Part 1, 014103.

  研究成果: Article › 同行評審

  • High electron mobility transistors 100%
  • high electron mobility transistors 89%
  • linearity 82%
  • code division multiple access 78%
  • Microwaves 76%
  3 引文 斯高帕斯（Scopus）

• Omni-directional dipole-based wideband planar antenna with capacitive end loading for WiMAX applications

  Kuo, F. Y. & Hsu, H-T., 1 5月 2010, 於: Journal of Electromagnetic Waves and Applications. 24, 7, p. 959-969 11 p.

  研究成果: Article › 同行評審

  • Radiator 100%
  • radiators 69%
  • Radiators 67%
  • Dipole 61%
  • antennas 53%
  4 引文 斯高帕斯（Scopus）

• Optical properties of a high-temperature superconductor operating in near zero-permittivity region

  Hsu, H-T., Kuo, F. Y. & Wu, C. J., 26 3月 2010, 於: Journal of Applied Physics. 107, 5, 053912.

  研究成果: Article › 同行評審

  • high temperature superconductors 100%
  • reflectance 67%
  • permittivity 66%
  • optical properties 62%
  • incidence 31%
  19 引文 斯高帕斯（Scopus）

• RF performance improvement of metamorphic high-electron mobility transistor using (In_xGa_1-xAs)_m(InAs)_n superlattice-channel structure for millimeter-wave applications

  Kuo, C. I., Hsu, H-T., Chen, Y. L., Wu, C. Y., Chang, E. Y., Miyamoto, Y., Tsern, W. C. & Sahoo, K. C., 1 7月 2010, 於: IEEE Electron Device Letters. 31, 7, p. 677-679 3 p., 5471190.

  研究成果: Article › 同行評審

  • High electron mobility transistors 100%
  • Superlattice 88%
  • Millimeter waves 85%
  • Current Gain 76%
  • Drain Current 66%
  3 引文 斯高帕斯（Scopus）
• 2009

  Convergence study of current sampling profiles for antenna design in the presence of electrically large and complex plat-forms using FIT-UTD hybridization approach

  Hsu, H-T., Kuo, F. Y. & Chou, H. T., 1 1月 2009, 於: Progress in Electromagnetics Research. 99, p. 195-209 15 p.

  研究成果: Article › 同行評審

  開啟存取

  • antenna design 100%
  • sampling 56%
  • Sampling 47%
  • Antennas 43%
  • profiles 36%
  8 引文 斯高帕斯（Scopus）

• Design rules for a Fabry-Perot narrow band transmission filter containing a metamaterial negative-index defect

  Hsu, H-T. & Wu, C. J., 1 1月 2009, 於: Progress In Electromagnetics Research Letters. 9, p. 101-107 7 p.

  研究成果: Article › 同行評審

  開啟存取

  • Metamaterials 100%
  • Wavelength 59%
  • Defects 57%
  • Refractive Index 40%
  • Wave 39%
  26 引文 斯高帕斯（Scopus）

• Extraordinary optical properties of a superconducting periodic multilayer in near-zero-permittivity operation range

  Aly, A. H., Hsu, H-T., Yang, T. J., Wu, C. J. & Hwangbo, C. K., 8 5月 2009, 於: Journal of Applied Physics. 105, 8, 083917.

  研究成果: Article › 同行評審

  • superconducting films 100%
  • permittivity 59%
  • optical properties 55%
  • Bragg reflectors 47%
  • polarization 45%
  62 引文 斯高帕斯（Scopus）

• InAs-Channel high-electron-mobility transistors for ultralow-power low noise amplifier applications

  Chang, C. Y., Hsu, H-T., Chang, E. Y. & Miyamoto, Y., 1 4月 2009, 於: Japanese Journal of Applied Physics. 48, 4 PART 2, 04C094.

  研究成果: Article › 同行評審

  • Low noise amplifiers 100%
  • High electron mobility transistors 99%
  • high electron mobility transistors 88%
  • Power amplifiers 84%
  • low noise 83%
  2 引文 斯高帕斯（Scopus）

• InAs-channel metal-oxide-semiconductor HEMTs with atomic-layer-deposited Al₂O₃ Gate Dielectric

  Chang, C. Y., Hsu, H-T., Chang, E. Y., Trinh, H. D. & Miyamoto, Y., 22 10月 2009, 於: Electrochemical and Solid-State Letters. 12, 12

  研究成果: Article › 同行評審

  • Gate dielectrics 100%
  • Oxide semiconductors 83%
  • High electron mobility transistors 81%
  • high electron mobility transistors 72%
  • metal oxide semiconductors 72%
  1 引文 斯高帕斯（Scopus）

• Microwave resonant transmission in a superconducting fabry-perot bilayer

  Wu, C. J., Hsu, H-T. & Yang, T. J., 1 7月 2009, 於: Journal of Superconductivity and Novel Magnetism. 22, 5, p. 487-493 7 p.

  研究成果: Article › 同行評審

  • Wave transmission 100%
  • Superconductor 85%
  • Microwaves 67%
  • Ferroelectric materials 66%
  • Superconducting materials 66%
  1 引文 斯高帕斯（Scopus）

• Reduction of peak sar in human head for handset applications with resistive sheets (R-cards)

  Chou, H. H., Hsu, H-T., Chou, H. T., Liu, K. H. & Kuo, F. Y., 1 1月 2009, 於: Progress in Electromagnetics Research. 94, p. 281-296 16 p.

  研究成果: Article › 同行評審

  開啟存取

  • cards 100%
  • simulation 32%
  • monopoles 29%
  • numerical analysis 25%
  • antennas 24%
  37 引文 斯高帕斯（Scopus）

• System level integration of simulation Methods for high data-rate transmission circuit design applications

  Hsu, H. S. & Hsu, H-T., 1 1月 2009, 於: Progress in Electromagnetics Research. 90, p. 31-49 19 p.

  研究成果: Article › 同行評審

  開啟存取

  • transmission circuits 100%
  • Networks (circuits) 31%
  • Circuit theory 23%
  • Electromagnetic simulation 22%
  • simulation 21%
  4 引文 斯高帕斯（Scopus）

• THz transmittance in one-dimensional superconducting nanomaterial-dielectric superlattice

  Aly, A. H., Ryu, S. W., Hsu, H-T. & Wu, C. J., 15 1月 2009, 於: Materials Chemistry and Physics. 113, 1, p. 382-384 3 p.

  研究成果: Article › 同行評審

  • Electromagnetic Wave 100%
  • Nanostructured materials 89%
  • Cutoff frequency 83%
  • Superconductor 81%
  • Superlattice 74%
  104 引文 斯高帕斯（Scopus）
• 2008

  A broadband printed helix-type antenna for wireless communications at high frequencies

  Chou, H. T., Kuo, L. R. & Hsu, H-T., 1 12月 2008, 於: Journal of Electromagnetic Waves and Applications. 22, 17-18, p. 2323-2334 12 p.

  研究成果: Article › 同行評審

  • wireless communication 100%
  • helices 81%
  • Communication 74%
  • Multilayer 72%
  • antennas 70%

• Hybridization of simulation codes based on numerical high and low frequency techniques for the efficient antenna design in the presence of electrically large and complex structures

  Chou, H. T. & Hsu, H-T., 1 1月 2008, 於: Progress in Electromagnetics Research. 78, p. 173-187 15 p.

  研究成果: Article › 同行評審

  開啟存取

  • antenna design 100%
  • low frequencies 47%
  • Antennas 43%
  • simulation 25%
  • antennas 19%
  10 引文 斯高帕斯（Scopus）

• InAs channel-based quantum well transistors for high-speed and low-voltage digital applications

  Kuo, C. I., Hsu, H-T. & Chang, E. Y., 26 5月 2008, 於: Electrochemical and Solid-State Letters. 11, 7

  研究成果: Article › 同行評審

  開啟存取

  • Semiconductor quantum wells 100%
  • Arsenic 94%
  • Indium 83%
  • arsenic 68%
  • Field effect transistors 68%
  9 引文 斯高帕斯（Scopus）

• InAs high electron mobility transistors with buried gate for ultralow-power-consumption low-noise amplifier application

  Kuo, C. I., Hsu, H-T., Chang, E. Y., Miyamoto, Y. & Tsern, W. C., 12 9月 2008, 於: Japanese Journal of Applied Physics. 47, 9 PART 1, p. 7119-7121 3 p.

  研究成果: Article › 同行評審

  • Low noise amplifiers 100%
  • High electron mobility transistors 99%
  • high electron mobility transistors 88%
  • low noise 83%
  • amplifiers 68%
  11 引文 斯高帕斯（Scopus）

• Investigations of isolation improvement techniques for multiple input multiple output (MIMO) WLAN portable terminal applications

  Chou, H. T., Cheng, H. C., Hsu, H-T. & Kuo, L. R., 1 1月 2008, 於: Progress in Electromagnetics Research. 85, p. 349-366 18 p.

  研究成果: Article › 同行評審

  開啟存取

  • MIMO (control systems) 100%
  • Loop antennas 96%
  • Wireless local area networks (WLAN) 71%
  • isolation 69%
  • loop antennas 54%
  58 引文 斯高帕斯（Scopus）

• Metamorphic in_0.53Ga_0.47as metal-oxide-semiconductor structure on a gaAs substrate with zro₂ high-κ dielectrics

  Kuo, C. I., Chang, E. Y., Hsu, H-T., Chen, C. C. & Chang, C. Y., 16 5月 2008, 於: Japanese Journal of Applied Physics. 47, 5 PART 1, p. 3441-3443 3 p.

  研究成果: Article › 同行評審

  • Oxide semiconductors 100%
  • metal oxide semiconductors 86%
  • Sulfur 81%
  • sulfur 80%
  • capacitors 73%
  2 引文 斯高帕斯（Scopus）

• RF and logic performance improvement of In_0.7Ga_0.3 As/InAs/In_0.7Ga_0.3As composite-channel HEMT using gate-sinking technology

  Kuo, C. I., Hsu, H-T., Chang, E. Y., Chang, C. Y., Miyamoto, Y., Datta, S., Radosavljevic, M., Huang, G. W. & Lee, C. T., 1 4月 2008, 於: IEEE Electron Device Letters. 29, 4, p. 290-293 4 p.

  研究成果: Article › 同行評審

  • High electron mobility transistors 100%
  • Current Gain 76%
  • Schottky Contact 70%
  • Compound Mobility 66%
  • Parasitic 53%
  34 引文 斯高帕斯（Scopus）
• 2007

  Effect of gate sinking on the device performance of the InGaP/AlGaAs/ InGaAs enhancement-mode PHEMT

  Chu, L. H., Chang, E. Y., Chang, L., Wu, Y. H., Chen, S. H., Hsu, H-T., Lee, T. L., Lien, Y. C. & Chang, C. Y., 1 2月 2007, 於: IEEE Electron Device Letters. 28, 2, p. 82-85 4 p.

  研究成果: Article › 同行評審

  • Platinum 100%
  • Schottky Contact 34%
  • Schottky Barrier 29%
  • Leakage Current 28%
  • Metals 27%
  18 引文 斯高帕斯（Scopus）